WO2009041295A1 - 表面検査方法および表面検査装置 - Google Patents

表面検査方法および表面検査装置 Download PDF

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Publication number
WO2009041295A1
WO2009041295A1 PCT/JP2008/066528 JP2008066528W WO2009041295A1 WO 2009041295 A1 WO2009041295 A1 WO 2009041295A1 JP 2008066528 W JP2008066528 W JP 2008066528W WO 2009041295 A1 WO2009041295 A1 WO 2009041295A1
Authority
WO
WIPO (PCT)
Prior art keywords
surface inspection
wafer
diffracted light
repeated pattern
inspection
Prior art date
Application number
PCT/JP2008/066528
Other languages
English (en)
French (fr)
Inventor
Yoshihiko Fujimori
Yuji Kudo
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to KR1020107009009A priority Critical patent/KR101527619B1/ko
Priority to JP2009534278A priority patent/JP5534406B2/ja
Publication of WO2009041295A1 publication Critical patent/WO2009041295A1/ja
Priority to US12/731,585 priority patent/US7907268B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Abstract

　本発明に係る表面検査方法は、ダブルパターニングにより形成された繰り返しパターンを有するウェハの表面を検査する表面検査方法であって、ウェハの表面に検査光を照射する第１のステップ（Ｓ１２１）と、検査光が照射されたウェハの表面からの回折光を検出する第２のステップ（Ｓ１２２）と、第２のステップで検出した回折光に基づいて繰り返しパターンにおける欠陥の有無を検査する第３のステップ（Ｓ１２３）とを有し、第２のステップにおいて、繰り返しパターンのピッチに対して２倍のピッチを有するパターンに対応した回折光を検出するようになっている。
PCT/JP2008/066528 2007-09-26 2008-09-12 表面検査方法および表面検査装置 WO2009041295A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107009009A KR101527619B1 (ko) 2007-09-26 2008-09-12 표면 검사 방법 및 표면 검사 장치
JP2009534278A JP5534406B2 (ja) 2007-09-26 2008-09-12 表面検査方法および表面検査装置
US12/731,585 US7907268B2 (en) 2007-09-26 2010-03-25 Surface inspection method and surface inspection device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-248469 2007-09-26
JP2007248469 2007-09-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/731,585 Continuation US7907268B2 (en) 2007-09-26 2010-03-25 Surface inspection method and surface inspection device

Publications (1)

Publication Number Publication Date
WO2009041295A1 true WO2009041295A1 (ja) 2009-04-02

Family

ID=40511182

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066528 WO2009041295A1 (ja) 2007-09-26 2008-09-12 表面検査方法および表面検査装置

Country Status (5)

Country Link
US (1) US7907268B2 (ja)
JP (1) JP5534406B2 (ja)
KR (1) KR101527619B1 (ja)
TW (1) TWI449899B (ja)
WO (1) WO2009041295A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016132553A1 (ja) * 2015-02-20 2016-08-25 株式会社Pfu 対象物高さ推定装置及び画像読取装置
CN111223785A (zh) * 2018-11-23 2020-06-02 爱思开海力士有限公司 半导体封装件及其制造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101787765B1 (ko) 2008-11-10 2017-11-15 가부시키가이샤 니콘 평가 장치 및 평가 방법
KR101895183B1 (ko) 2010-11-12 2018-09-04 에베 그룹 에. 탈너 게엠베하 웨이퍼 스택에 있는 결함 및 층 두께를 측정하기 위한 측정 장치 및 측정 방법
EP3126893A4 (en) 2014-03-31 2017-10-04 Kla-Tencor Corporation Focus measurements using scatterometry metrology
JP2017166919A (ja) * 2016-03-15 2017-09-21 東芝メモリ株式会社 テンプレートの欠陥検査方法
CN110268266B (zh) * 2017-02-08 2022-11-29 富士胶片株式会社 免疫检查装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206813A (ja) * 1990-11-30 1992-07-28 Matsushita Electric Ind Co Ltd 露光方法
JPH0749927B2 (ja) * 1988-09-27 1995-05-31 三菱電機株式会社 重ね合せ検査方法
JP2000206050A (ja) * 1999-01-13 2000-07-28 Nikon Corp 表面検査方法及び装置
JP2001108637A (ja) * 1999-10-05 2001-04-20 Nikon Corp 欠陥検査装置及び欠陥検査方法
JP3644041B2 (ja) * 1993-02-03 2005-04-27 株式会社ニコン 露光方法及び露光装置
JP2006343102A (ja) * 2004-06-16 2006-12-21 Nikon Corp 表面検査装置および表面検査方法

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US5739898A (en) * 1993-02-03 1998-04-14 Nikon Corporation Exposure method and apparatus
JPH0749927A (ja) 1993-08-09 1995-02-21 Nireco Corp パターン認識方法
JP3288884B2 (ja) 1995-03-13 2002-06-04 株式会社東芝 レジストパターン形成方法
US5777729A (en) 1996-05-07 1998-07-07 Nikon Corporation Wafer inspection method and apparatus using diffracted light
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
JP2002280388A (ja) 2001-03-15 2002-09-27 Toshiba Corp 半導体装置の製造方法
KR101248674B1 (ko) * 2004-06-16 2013-03-28 가부시키가이샤 니콘 표면 검사 장치 및 표면 검사 방법
JP4802481B2 (ja) * 2004-11-09 2011-10-26 株式会社ニコン 表面検査装置および表面検査方法および露光システム
JP7049927B2 (ja) * 2018-06-06 2022-04-07 Ｊｆｅロックファイバ－株式会社 ミネラルウールの製造方法及び装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749927B2 (ja) * 1988-09-27 1995-05-31 三菱電機株式会社 重ね合せ検査方法
JPH04206813A (ja) * 1990-11-30 1992-07-28 Matsushita Electric Ind Co Ltd 露光方法
JP3644041B2 (ja) * 1993-02-03 2005-04-27 株式会社ニコン 露光方法及び露光装置
JP2000206050A (ja) * 1999-01-13 2000-07-28 Nikon Corp 表面検査方法及び装置
JP2001108637A (ja) * 1999-10-05 2001-04-20 Nikon Corp 欠陥検査装置及び欠陥検査方法
JP2006343102A (ja) * 2004-06-16 2006-12-21 Nikon Corp 表面検査装置および表面検査方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016132553A1 (ja) * 2015-02-20 2016-08-25 株式会社Pfu 対象物高さ推定装置及び画像読取装置
JPWO2016132553A1 (ja) * 2015-02-20 2017-07-20 株式会社Pfu 対象物高さ推定装置及び画像読取装置
CN111223785A (zh) * 2018-11-23 2020-06-02 爱思开海力士有限公司 半导体封装件及其制造方法
CN111223785B (zh) * 2018-11-23 2023-08-01 爱思开海力士有限公司 半导体封装件及其制造方法

Also Published As

Publication number Publication date
TW200923348A (en) 2009-06-01
KR20100076991A (ko) 2010-07-06
JPWO2009041295A1 (ja) 2011-01-20
US20100177312A1 (en) 2010-07-15
US7907268B2 (en) 2011-03-15
TWI449899B (zh) 2014-08-21
KR101527619B1 (ko) 2015-06-09
JP5534406B2 (ja) 2014-07-02

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