WO2009039801A1 - Composant émetteur de rayonnement avec élément de conversion - Google Patents

Composant émetteur de rayonnement avec élément de conversion Download PDF

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Publication number
WO2009039801A1
WO2009039801A1 PCT/DE2008/001255 DE2008001255W WO2009039801A1 WO 2009039801 A1 WO2009039801 A1 WO 2009039801A1 DE 2008001255 W DE2008001255 W DE 2008001255W WO 2009039801 A1 WO2009039801 A1 WO 2009039801A1
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WO
WIPO (PCT)
Prior art keywords
radiation
conversion layer
conversion
conversion element
emitting component
Prior art date
Application number
PCT/DE2008/001255
Other languages
German (de)
English (en)
Inventor
Peter Knittl
Georg Bogner
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2009039801A1 publication Critical patent/WO2009039801A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Definitions

  • the invention relates to a radiation-emitting component with a conversion layer arrangement according to claim 1.
  • Light-emitting components with a conversion element are known, for example, from WO 97/50132. These arrangements comprise a semiconductor body which emits light in operation (primary light), and a conversion layer with a conversion element which converts part of this light into another wavelength range (secondary light). The color impression of the light emitted by such a semiconductor component results from additive color mixing of primary light and secondary light.
  • the conversion element can be arranged downstream of the semiconductor in various ways.
  • the conversion layer consists of a potting compound surrounding the semiconductor body, in which the conversion element is embedded.
  • color locus refers to the numerical values which describe the color of the emitted light of the component in the CIE color space.
  • the semiconductor body as a source of primary light and the casting compound with conversion element as a source of secondary light are generally of different shape and size, so that a spatially inhomogeneous color impression can occur and chromatic errors may occur in images.
  • there are manufacturing tolerances in the metering of the potting compound which can lead to fluctuations in the amount of the potting compound, which is arranged downstream of the semiconductor body in a radiation direction, and thus also to fluctuations in the color locus of the component. If a uniform color impression is required in different directions of observation, then the optical path length in the potting compound should be approximately the same for all desired observation directions.
  • the resulting color locus still has a dependence on the viewing angle if the semiconductor layer sequence of the LED chip is essentially provided with a thin, as homogeneous as possible and completely applied on the main surface of the semiconductor layer sequence conversion layer.
  • WO 01/65613 A1 it is disclosed to apply a thin conversion layer with at least one conversion element directly on a semiconductor layer sequence of a diode chip.
  • This has the advantage over the use of conversion element-containing potting compounds that the conversion element is more homogeneous and in a better definable amount can be applied to the semiconductor layer sequence of the diode chip.
  • a light emitted by diode chips of this type has a greater homogeneity with regard to its color local spectrum than components in which a diode chip is encapsulated with a casting compound containing conversion elements.
  • Such conversion of the light through a thin conversion layer directly above the semiconductor body results in that only certain color loci, e.g. can be set for an entire chip wafers, which themselves have fluctuations and tolerances in the color location.
  • color differences over the emission angle may also occur due to different path lengths of the radiation.
  • a radiation-emitting component contains an LED chip which emits primary radiation having a wavelength ⁇ 0 , wherein the LED chip is followed by a first conversion layer in the emission direction, which contains at least one conversion element which, upon excitation with the wavelength ⁇ 0, has secondary radiation emitted at different wavelengths.
  • the first conversion layer is applied at least on one main surface of the LED chip, wherein the first conversion layer is followed by a second conversion layer having at least one conversion element which emits secondary radiation of a different wavelength when excited at the wavelength ⁇ 0 , such that the semiconductor component mixed radiation emits, the primary radiation, secondary radiation of the conversion element of the first conversion layer and secondary radiation of the conversion element of the second conversion layer contains.
  • the component has the advantage that color differences over the emission angle of the LED chip, which result from different path lengths of the primary and secondary radiation, are reduced. This is due to the fact that at the conversion element of the second conversion layer, a part of the primary radiation and the secondary radiation of the first conversion layer are scattered, wherein the scattered radiation of the primary and secondary radiation propagates undirected in all spatial directions. As a result, fluctuations in the color locus above the Abstrahlwinke1 can be reduced. In this way, a reduction of Farbinhomogenticianen is achieved over the Abstrahlwinke1.
  • a close and adapted color selection can take place and thus a desired color location of the emitted radiation of the component can be set.
  • a base Farbort can be adjusted, which essentially the color impression of the emitted Radiation of the device determined.
  • the subsequent second conversion layer can be used to achieve a finer adjustment and thus a further adaptation of the color locus of the emitted radiation of the component.
  • the first conversion layer is thinner than the second conversion layer.
  • the concentration of the conversion element in the second conversion layer is less than the concentration of the conversion element in the first conversion layer.
  • the original color location of the mixed radiation passing through the first conversion layer consisting of primary radiation and secondary radiation of the conversion element of the first conversion layer is only slightly changed.
  • the color impression of the radiation emitted by the component is generated by the first conversion layer thus slightly influenced by the second conversion layer with low concentration of the conversion element contained therein.
  • the overall result is a reduction of color inhomogeneities over the emission angle.
  • the LED chip is arranged in a recess of a base housing, wherein the recess is at least partially filled by the second conversion layer and encloses at least a portion of the LED chip.
  • the device has a reflector for the emitted from the LED chip in operation primary radiation and the generated secondary radiation, in which the LED chip and the subsequent conversion layers are at least partially arranged.
  • the reflector is formed by a reflection-increasing coating of the inner walls of the recess.
  • the conversion element of the second conversion layer may be a part of the primary radiation in radiation of several
  • the one or more wavelength ranges of the secondary radiation of the first and / or second conversion layer have substantially longer wavelengths than the wavelength range of the primary radiation.
  • the secondary radiation of the second conversion element has the same wavelength as the secondary radiation of the first conversion element. This increases the proportion of secondary radiation in the wavelength range of the conversion element of the first conversion layer. The color location of the radiation emitted by the component is thereby shifted in the direction of the secondary radiation.
  • the color location of the mixed radiation emitted by the LED chip consisting of primary radiation and secondary radiation can otherwise be too strong the color location the primary radiation would be adjusted by the second conversion layer with advantage so that the color location of the radiation emitted by the component is shifted in the direction of the color locus of the secondary radiation.
  • the conversion element or the conversion elements and LED chip are matched to one another such that the colors of the primary radiation and at least a part of the secondary radiation are complementary to one another. Additive color mixing gives the impression of white light.
  • the second conversion layer contains a further conversion element or further conversion elements, preferably red phosphors.
  • the color locus of the radiation emitted by the component is preferably in the color locus of a warm white distribution, which is preferably in the CIE color space in the color temperature range of 6000K - 2000K.
  • a color locus which due to the conversion in the first conversion layer in the range of a white distribution, in the CIE color space in the Color temperature range of about 6000K, in the direction of different warm white distributions, which are preferably in the CIE color space in the color temperature range of 6000K - 2000K, are moved. Furthermore, it is possible by other conversion elements to produce blue, green, yellow or violet tones.
  • the wavelength of the radiation emitted by the LED chip is preferably in the ultraviolet or blue spectral range. Particularly suitable for this purpose are LED chips based on nitride compound semiconductors.
  • nitride compound semiconductors in the present context means that the active epitaxial layer sequence or at least one layer thereof comprises a nitride III / V compound semiconductor material, preferably Al n Ga m inn nm N, where 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
  • this material does not necessarily have to have a mathematically exact composition according to the above formula, but it may have one or more dopants and additional constituents which have the characteristic physical properties of the Al n Ga m Ini - n - ⁇ , N-material does not substantially change the sake of simplicity, however, the above formula includes only the major components of the crystal lattice (Al, Ga, in, N), even though these can be replaced in part by small amounts of other substances..
  • the layer sequence of the LED chip may be based on phosphide compound semiconductors.
  • “based on phosphide compound semiconductors” means that the semiconductor body, in particular the active region, preferably comprises Al n Ga m Ini -m P, where O ⁇ n ⁇ l, O ⁇ m ⁇ l and n + m ⁇ 1 , preferably with n ⁇ 0 - S -
  • This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may include one or more dopants as well as additional ingredients that do not substantially alter the physical properties of the material.
  • the above formula includes only the essential constituents of the crystal lattice (Al, Ga, In, P), even though these may be partially replaced by small amounts of other substances.
  • the secondary radiation of the conversion element of the first and / or second conversion layer is in the yellow or red spectral range.
  • the LED chip is with particular advantage a thin-film LED chip.
  • an LED chip is considered a thin-film light-emitting diode chip, during the manufacture of which the growth substrate on which a layer sequence for the LED chip has been grown, for example epitaxially, is thinned or, in particular, completely detached.
  • the second conversion layer is formed by a potting compound, in which the second conversion element is embedded.
  • the component has a beam-shaping element in the emission direction.
  • the emission characteristic of the component can thereby be advantageously influenced.
  • this element may be a lens.
  • a small lens can be used as the beam-forming element without significant dispersion effects. This is due to the fact that preferably the concentration of the conversion element in the second conversion layer is lower than in the first conversion layer. Due to the low concentration of the conversion element in the second conversion layer, a small number of scattering effects of the primary and secondary radiation take place at the conversion elements in the second conversion layer.
  • the emission surface of the radiation emitted by the LED chip is advantageously essentially predetermined by the LED chip and by the thin first conversion layer applied to the surface of the LED chip.
  • Figure 1 is a schematic sectional view of a first embodiment of a device according to the invention.
  • Figure 2 is a schematic sectional view of a second embodiment of a device according to the invention.
  • the same or equivalent components are each provided with the same reference numerals.
  • the components shown and the size ratios of the components with each other are not to be considered as true to scale.
  • an LED chip 1 has a rear contact 2, a front contact 3 and a layer sequence 7 composed of a number of different layers, which contains an active zone which during operation of the component comprises at least one radiation (FIG. eg ultraviolet, blue or green).
  • FOG. eg ultraviolet, blue or green
  • the layer sequence 7 is based, for example, on nitride compound semiconductors, ie it preferably contains Al x In v Ga; L_ x _yN, where O ⁇ x ⁇ l, O ⁇ y ⁇ l and x + y ⁇ 1.
  • the layer sequence 7 can occur Phosphide compound semiconductors are based, ie it preferably contains Al n Ga m In min -mP / where O ⁇ n ⁇ l, O ⁇ m ⁇ l and n + m ⁇ 1, preferably with n ⁇ 0 and / or m ⁇ 0 In this case, this material does not necessarily have to have a mathematically exact composition according to one of the above formulas.
  • the above formulas contain only the essential constituents of the crystal lattice (Al, In, Ga, N, P), although these may be partially replaced by small amounts of other substances.
  • the active zone of the layer sequence 7 emits when exposed to a current, for example electromagnetic radiation from the blue or ultraviolet wavelength range. It may, for example, have a pn junction, a double heterostructure, a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure). Such structures are known to the person skilled in the art and are therefore not explained in detail at this point.
  • the LED chip 1 is connected by means of an electrically conductive connection means, e.g. a metallic solder or an adhesive, fixed with its rear side contact 2 on a first electrical connection 4.
  • the front-side contact 3 is connected to a second connection 5 by means of a bonding wire 6.
  • the first and second terminals 4, 5 are embedded in a base housing 8 with a recess.
  • the base housing 8 may be prefabricated.
  • prefabricated is meant that the base housing 8 is already finished on the terminals 4, 5, for example by means of injection molding, before the LED chip 1 is mounted on the first terminal 4.
  • the base housing 8 consists for example of an opaque plastic and the recess is formed in terms of their shape as a reflector for the emitted from the LED chip 1 during operation radiation.
  • the reflector is formed by a reflective coating of the inner walls of the recess.
  • a first conversion layer 9 is applied directly to the radiation-emitting surface of the LED chip 1.
  • This conversion layer 9 preferably contains silicone or a silicone-containing compound which contains a conversion element 10, preferably inorganic Conversion element, for white luminous components preferably Y 3 Al 5 Oi 2 : Ce 3+ (YAG: Ce), are offset.
  • the conversion layer 9 may comprise a ceramic compound or a transparent plastic, for example epoxy resin or polymethyl methacrylate, which with a conversion element 10, preferably inorganic conversion element, for white luminous components preferably Y 3 Al 5 O 2 : Ce 3+ (YAG: Ce), are offset.
  • This first conversion layer 9 is surrounded by a further conversion layer 13 with conversion element 11 contained therein, preferably from an epoxy resin provided with the conversion element 11, particularly preferably with the conversion material used in the first conversion layer 9, which at least partially fills the recess.
  • the concentration of the conversion element 11 of the second conversion layer 13 is lower than the concentration of the conversion element 10 of the first conversion layer 9.
  • the second conversion layer 13 may have one or more different conversion elements 11.
  • a conversion element for example, inorganic conversion elements are suitable, such as with rare earths, in particular with Ce or Tb, doped garnets or organic conversion elements, such as perylene conversion elements. Further suitable conversion elements are listed, for example, in WO 98/12757 and in WO 01/65613 A1, the content of which is hereby incorporated by reference.
  • the illustrated in Figure 2 embodiment of an inventive device differs from the device in Figure 1, characterized in that the first Conversion layer 9 is applied over the entire surface of the radiation-emitting main surface of the LED chip 1, wherein the substrate of the LED chip 1 consists of a transparent material emitted by the LED chip during operation primary radiation.
  • the recess in which the LED chip 1 is arranged has, by means of a reflective coating of the inner walls, a reflector 12 for the primary radiation emitted by the LED chip during operation.
  • the second conversion layer 13 terminates with the base housing 8. This means that the second conversion layer 13 and the base housing 8 preferably have the same height. If the second conversion layer 13 does not terminate with the base housing 8, the distance, which results between the second conversion layer 13 and a beam-forming element, can be compensated by an adhesive, so that the conversion layer 13 with the adhesive disposed thereon and the base housing 8 have the same height.
  • this element may be a lens.
  • a comparatively small lens may be used as the beam-shaping element without significant dispersion effects.
  • concentration of the conversion element 11 in the second Conversion layer 13 is less than the concentration of the conversion element 10 in the first conversion layer 9. Due to the low concentration of the conversion element 11 in the second conversion layer 13, a small number of scattering effects of the primary and secondary radiation takes place at the conversion elements 11 in the second conversion layer 13 , Thus, the emission surface of the radiation emitted by the LED chip 1 is advantageously essentially predetermined by the LED chip 1 and by the thin first conversion layer 9 applied to the surface of the LED chip 1.
  • the exemplary embodiments of FIGS. 1 and 2 have the advantage that due to the thin first conversion layer 9 applied to the surface of the LED chip, the path length through the first conversion layer 9 is approximately the same for the entire radiation emitted by the LED chip 1.
  • the subsequent second conversion layer 13 contains a low concentration of conversion elements 11, resulting in the conversion element 11 of the second conversion layer 13 scattering effects of the primary and secondary radiation, resulting in an undirected scattered radiation of the primary and secondary radiation in all spatial directions. As a result, fluctuations of the color location over the emission angle can be reduced. A reduction of color inhomogeneities over the emission angle results with advantage.
  • At least a portion of the secondary radiation of the second conversion element 11 has the same wavelength as the secondary radiation of the first conversion element 10. This increases the proportion of secondary radiation in the wavelength range of the conversion element 10 of the first conversion layer 9. The color location of the device emitted radiation is thereby shifted in the direction of the secondary radiation.
  • the color location of the mixed radiation emitted by the LED chip 1 consisting of primary radiation and secondary radiation, which would otherwise show too strongly the color location of the primary radiation, can be adjusted by the second conversion layer 13 with conversion element 11 contained in it Color location of the radiation emitted by the device is shifted in the direction of the color locus of the secondary radiation.
  • Conversion layer arrangement results from the fact that the second conversion layer 13 may contain a further conversion element 11, preferably a red phosphor, so that from a white distribution 'in the CIE color space in the color temperature range of about 6000K, the mixed radiation of a warm white distribution, preferably in the CIE Color space is in the color temperature range of 6000K - 2000K, can be generated.
  • a further conversion element 11 preferably a red phosphor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un composant comprenant : une puce à DEL (1) qui est capable d'émettre un rayonnement électromagnétique primaire; une première couche de conversion (9), qui est appliquée sur au moins une face principale de la puce à DEL (1) et qui présente au moins un élément de conversion (10) qui est capable de convertir une partie du rayonnement primaire en un rayonnement secondaire; et une deuxième couche de conversion (13), disposée à la suite de cette première couche de conversion (9), qui présente au moins un élément de conversion (11) qui transforme au moins une partie d'un rayonnement primaire émis par la puce à DEL (1) en un rayonnement secondaire. Au moins une partie du rayonnement secondaire de l'élément de conversion (10) de la première couche de conversion (9), une partie du rayonnement secondaire de l'élément de conversion (11) de la deuxième couche de conversion (13) et une partie du rayonnement primaire non converti se superposent en un rayonnement mixte, ce qui dimininue ainsi les inhomogénéités de couleur sur l'angle de rayonnement.
PCT/DE2008/001255 2007-09-28 2008-07-30 Composant émetteur de rayonnement avec élément de conversion WO2009039801A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046612.0 2007-09-28
DE102007046612 2007-09-28
DE102007057710.0 2007-11-30
DE102007057710.0A DE102007057710B4 (de) 2007-09-28 2007-11-30 Strahlungsemittierendes Bauelement mit Konversionselement

Publications (1)

Publication Number Publication Date
WO2009039801A1 true WO2009039801A1 (fr) 2009-04-02

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PCT/DE2008/001255 WO2009039801A1 (fr) 2007-09-28 2008-07-30 Composant émetteur de rayonnement avec élément de conversion

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DE (1) DE102007057710B4 (fr)
TW (1) TWI375336B (fr)
WO (1) WO2009039801A1 (fr)

Cited By (8)

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WO2012025377A1 (fr) * 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Composant émetteur de rayonnement et procédé de fabrication d'un composant émetteur de rayonnement
RU2632263C2 (ru) * 2012-04-13 2017-10-03 Конинклейке Филипс Н.В. Светопреобразующий блок, лампа и светильник
WO2019025456A1 (fr) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Composant optoélectronique
WO2019120309A1 (fr) * 2017-12-22 2019-06-27 海迪科（南通）光电科技有限公司 Structure de boîtier de puce sur tranche (csp) et son procédé de préparation
CN110277729A (zh) * 2018-03-15 2019-09-24 丰田合成株式会社 发光装置
CN110610928A (zh) * 2018-06-15 2019-12-24 海迪科（南通）光电科技有限公司 一种利用wlp的集成式led封装形式及其制备方法
WO2020030505A1 (fr) * 2018-08-09 2020-02-13 Osram Oled Gmbh Composant optoélectronique émettant de la lumière visible et un rayonnement infrarouge
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting

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DE102011050450A1 (de) 2011-05-18 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102011118290A1 (de) * 2011-11-10 2013-05-16 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
DE102012222475A1 (de) 2012-12-06 2014-06-12 Osram Gmbh Leuchtdiode aufweisend mehrere leuchtstoffbereiche
DE102013218451A1 (de) * 2013-09-14 2015-03-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Konversionselement für ein optisches oder optoelektronisches Bauelement und Verfahren zu seiner Herstellung
WO2019219095A1 (fr) * 2018-05-17 2019-11-21 海迪科（南通）光电科技有限公司 Forme d'encapsulation de del intégrée qui utilise une encapsulation de niveau tranche (wlp), et son procédé de préparation

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