WO2009038094A1 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

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Publication number
WO2009038094A1
WO2009038094A1 PCT/JP2008/066771 JP2008066771W WO2009038094A1 WO 2009038094 A1 WO2009038094 A1 WO 2009038094A1 JP 2008066771 W JP2008066771 W JP 2008066771W WO 2009038094 A1 WO2009038094 A1 WO 2009038094A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar battery
target
conductive film
transparent conductive
forming
Prior art date
Application number
PCT/JP2008/066771
Other languages
English (en)
French (fr)
Inventor
Hirohisa Takahashi
Satoru Ishibashi
Isao Sugiura
Satoru Takasawa
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to US12/678,399 priority Critical patent/US20100206719A1/en
Priority to JP2009533160A priority patent/JPWO2009038094A1/ja
Priority to EP08832729A priority patent/EP2197044A4/en
Priority to CN200880104798A priority patent/CN101790795A/zh
Publication of WO2009038094A1 publication Critical patent/WO2009038094A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　本発明の太陽電池の製造方法は、光入射側の電力取り出し電極として機能する上部電極が、ＺｎＯを基本構成元素とする透明導電膜からなる太陽電池の製造方法であって、前記透明導電膜の形成材料を備えたターゲットに、３４０Ｖ以下のスパッタ電圧を印加しつつ、前記ターゲットの表面に水平磁場を発生させてスパッタを行うことにより、前記上部電極を形成する工程を備える。
PCT/JP2008/066771 2007-09-19 2008-09-17 太陽電池の製造方法 WO2009038094A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/678,399 US20100206719A1 (en) 2007-09-19 2008-09-17 Method for manufacturing solar cell
JP2009533160A JPWO2009038094A1 (ja) 2007-09-19 2008-09-17 太陽電池の製造方法
EP08832729A EP2197044A4 (en) 2007-09-19 2008-09-17 SOLAR BATTERY MANUFACTURING METHOD
CN200880104798A CN101790795A (zh) 2007-09-19 2008-09-17 太阳能电池的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007242608 2007-09-19
JP2007-242608 2007-09-19

Publications (1)

Publication Number Publication Date
WO2009038094A1 true WO2009038094A1 (ja) 2009-03-26

Family

ID=40467904

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066771 WO2009038094A1 (ja) 2007-09-19 2008-09-17 太陽電池の製造方法

Country Status (7)

Country Link
US (1) US20100206719A1 (ja)
EP (1) EP2197044A4 (ja)
JP (1) JPWO2009038094A1 (ja)
KR (1) KR20100036382A (ja)
CN (1) CN101790795A (ja)
TW (1) TW200937661A (ja)
WO (1) WO2009038094A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222634A (ja) * 2010-04-06 2011-11-04 Ulvac Japan Ltd 太陽電池の製造方法
WO2015177899A1 (ja) * 2014-05-22 2015-11-26 東芝三菱電機産業システム株式会社 バッファ層の成膜方法およびバッファ層

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5533448B2 (ja) * 2010-08-30 2014-06-25 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0987833A (ja) 1995-09-26 1997-03-31 Asahi Glass Co Ltd 透明導電膜の製造方法
JP2003239069A (ja) * 2002-02-15 2003-08-27 Ulvac Japan Ltd 薄膜の製造方法及び装置
JP2004169138A (ja) * 2002-11-21 2004-06-17 Ulvac Japan Ltd 透明導電膜の製造方法及び製造装置
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2007242608A (ja) 2006-02-10 2007-09-20 Toshiba Lighting & Technology Corp 電球形蛍光ランプおよび照明装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772346B2 (ja) * 1989-03-03 1995-08-02 日本真空技術株式会社 低抵抗透明導電膜の製造方法
JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
JP2899190B2 (ja) * 1993-01-08 1999-06-02 信越化学工業株式会社 マグネトロンプラズマ用永久磁石磁気回路
KR100846484B1 (ko) * 2002-03-14 2008-07-17 삼성전자주식회사 Ｒｍｉｍ 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치
KR100917463B1 (ko) * 2003-01-15 2009-09-14 삼성전자주식회사 마그네트론 캐소드 및 이를 채용하는 마그네트론 스퍼터링장치
DE10336422A1 (de) * 2003-08-08 2005-03-17 Applied Films Gmbh & Co. Kg Vorrichtung zur Kathodenzerstäubung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0987833A (ja) 1995-09-26 1997-03-31 Asahi Glass Co Ltd 透明導電膜の製造方法
JP2003239069A (ja) * 2002-02-15 2003-08-27 Ulvac Japan Ltd 薄膜の製造方法及び装置
JP2004169138A (ja) * 2002-11-21 2004-06-17 Ulvac Japan Ltd 透明導電膜の製造方法及び製造装置
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2007242608A (ja) 2006-02-10 2007-09-20 Toshiba Lighting & Technology Corp 電球形蛍光ランプおよび照明装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222634A (ja) * 2010-04-06 2011-11-04 Ulvac Japan Ltd 太陽電池の製造方法
WO2015177899A1 (ja) * 2014-05-22 2015-11-26 東芝三菱電機産業システム株式会社 バッファ層の成膜方法およびバッファ層
JPWO2015177899A1 (ja) * 2014-05-22 2017-04-20 東芝三菱電機産業システム株式会社 バッファ層の成膜方法およびバッファ層
US11075318B2 (en) 2014-05-22 2021-07-27 Toshiba Mitsubishi-Electric Industrial Systems Corporation Buffer layer film-forming method and buffer layer

Also Published As

Publication number Publication date
EP2197044A1 (en) 2010-06-16
KR20100036382A (ko) 2010-04-07
TW200937661A (en) 2009-09-01
CN101790795A (zh) 2010-07-28
EP2197044A4 (en) 2012-06-27
US20100206719A1 (en) 2010-08-19
JPWO2009038094A1 (ja) 2011-01-06

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