WO2009036919A3 - Verfahren zur herstellung wenigstens einer strahlungsquelle - Google Patents

Verfahren zur herstellung wenigstens einer strahlungsquelle Download PDF

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Publication number
WO2009036919A3
WO2009036919A3 PCT/EP2008/007444 EP2008007444W WO2009036919A3 WO 2009036919 A3 WO2009036919 A3 WO 2009036919A3 EP 2008007444 W EP2008007444 W EP 2008007444W WO 2009036919 A3 WO2009036919 A3 WO 2009036919A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor component
mounting
radiation source
mounting body
material fit
Prior art date
Application number
PCT/EP2008/007444
Other languages
English (en)
French (fr)
Other versions
WO2009036919A2 (de
Inventor
Dirk Lorenzen
Original Assignee
Dirk Lorenzen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dirk Lorenzen filed Critical Dirk Lorenzen
Priority to DE112008002436T priority Critical patent/DE112008002436A5/de
Publication of WO2009036919A2 publication Critical patent/WO2009036919A2/de
Publication of WO2009036919A3 publication Critical patent/WO2009036919A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Eine Halbleiterstrahlungsquei!e (90), beispielsweise ein Diodenlaser, wird durch stoffschlüssige Verbindung von einem kantenemittierenden Halbleiterbauelement (10), beispielsweise ein Laserdiodenbarren, mit einem Kühlkörper (70) in einem Verfahren hergestellt, in dem ein Montagekörper (40) den Stoffschluss zwischen dem Halbleiterbauelement (10) und dem Kühlkörper (70) vermittelt. Zur Herstellung des Montagekörpers (40) wird ein Grundkörper (20), der wenigstens teilweise aus Wolfram, Kohlenstoff, Siliziumkarbid, Bornitrid, Berylliumoxid oder Aluminiumnitrid besteht, auf wenigstens einer seiner Außenflächen (21, 22, 23) durch elektrochemische Beschichtung mit einer metallischen Schicht (31) von wenigstens einem der Metalle Kupfer, Silber und Gold versehen. Mit einem Formgebungsverfahren erhält die metallische Schicht (31) oberflächlich eine ebene Montagefläche (41) und eine ebene Stirnfläche (42). In einem ersten Fügeprozess wird an der Montagefläche (42) eine stoffschlüssige Verbindung mit dem Halbleiterbauelement erzielt, wobei die zwischen Halbleiterbauelement (10) und Montagekörper (40) gebildete Fügezone (55) zumindest abschnittsweise überwiegend aus wenigstens einem Metall der Kupfergruppe, Eisengruppe oder Platinmetallgruppe oder dessen Verbindung mit beispielsweise einem weiteren Metall besteht. In einem zweiten Fügeprozess wird der Montagekörper (20) über eine Anbindungsfläche stoffschlüssig mit dem Kühlkörper (70) verbunden.
PCT/EP2008/007444 2007-09-13 2008-09-11 Verfahren zur herstellung wenigstens einer strahlungsquelle WO2009036919A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112008002436T DE112008002436A5 (de) 2007-09-13 2008-09-11 Verfahren zur Herstellung wenigstens einer Strahlungsquelle

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007043580 2007-09-13
DE102007043580.2 2007-09-13

Publications (2)

Publication Number Publication Date
WO2009036919A2 WO2009036919A2 (de) 2009-03-26
WO2009036919A3 true WO2009036919A3 (de) 2010-02-25

Family

ID=40210750

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/007444 WO2009036919A2 (de) 2007-09-13 2008-09-11 Verfahren zur herstellung wenigstens einer strahlungsquelle

Country Status (2)

Country Link
DE (1) DE112008002436A5 (de)
WO (1) WO2009036919A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015106712A1 (de) * 2015-04-30 2016-11-03 Osram Opto Semiconductors Gmbh Anordnung mit einem Substrat und einem Halbleiterlaser
DE102018210141A1 (de) 2018-06-21 2019-12-24 Trumpf Photonics, Inc. Diodenlaseranordnung und Verfahren zur Herstellung einer Diodenlaseranordnung
DE102018210136A1 (de) * 2018-06-21 2019-12-24 Trumpf Photonics, Inc. Diodenlaseranordnung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0949727A2 (de) * 1998-04-08 1999-10-13 Fuji Photo Film Co., Ltd. Wärmesenke und Verfahren zur Herstellung
US5985684A (en) * 1996-04-30 1999-11-16 Cutting Edge Optronics, Inc. Process for manufacturing a laser diode having a heat sink
US20050168950A1 (en) * 2004-01-30 2005-08-04 Hokichi Yoshioka Semiconductor cooling device and stack of semiconductor cooling devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985684A (en) * 1996-04-30 1999-11-16 Cutting Edge Optronics, Inc. Process for manufacturing a laser diode having a heat sink
EP0949727A2 (de) * 1998-04-08 1999-10-13 Fuji Photo Film Co., Ltd. Wärmesenke und Verfahren zur Herstellung
US20050168950A1 (en) * 2004-01-30 2005-08-04 Hokichi Yoshioka Semiconductor cooling device and stack of semiconductor cooling devices

Also Published As

Publication number Publication date
DE112008002436A5 (de) 2010-12-23
WO2009036919A2 (de) 2009-03-26

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