WO2009034869A1 - Système de traitement sous vide et procédé de transfert de substrat - Google Patents

Système de traitement sous vide et procédé de transfert de substrat Download PDF

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Publication number
WO2009034869A1
WO2009034869A1 PCT/JP2008/065672 JP2008065672W WO2009034869A1 WO 2009034869 A1 WO2009034869 A1 WO 2009034869A1 JP 2008065672 W JP2008065672 W JP 2008065672W WO 2009034869 A1 WO2009034869 A1 WO 2009034869A1
Authority
WO
WIPO (PCT)
Prior art keywords
transfer chamber
chamber
processing system
processing
vacuum processing
Prior art date
Application number
PCT/JP2008/065672
Other languages
English (en)
Japanese (ja)
Inventor
Tetsuya Miyashita
Toshiharu Hirata
Masamichi Hara
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN200880023081A priority Critical patent/CN101688296A/zh
Publication of WO2009034869A1 publication Critical patent/WO2009034869A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention porte sur un système de traitement sous vide (1), qui comporte une première section de traitement (2) à l'intérieur de laquelle des chambres de traitement PVC (12-15) sont reliées à une première chambre de transfert (11) vers laquelle une tranche (W) doit être transférée ; une deuxième section de traitement (3) dans laquelle des chambres de traitement par dépôt chimique en phase vapeur (22, 23) sont reliées à une deuxième chambre de traitement (21) vers laquelle la tranche doit être transférée ; une chambre tampon (5a), qui est disposée entre la première chambre de transfert (11) et la deuxième chambre de transfert (12) par l'intermédiaire d'un robinet-vanne (G), stocke la tranche (W), et est apte à ajuster la pression à l'intérieur de celle-ci ; et une section de commande (110) pour commander l'ouverture/fermeture du robinet-vanne (G) et une pression dans la chambre tampon (5a), de telle sorte que la chambre tampon (5a) communique de façon sélective soit avec la première chambre de transfert (11), soit avec la deuxième chambre de transfert (12) et que la pression à l'intérieur correspond à la pression à l'intérieur de la chambre de transfert communicante.
PCT/JP2008/065672 2007-09-10 2008-09-01 Système de traitement sous vide et procédé de transfert de substrat WO2009034869A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200880023081A CN101688296A (zh) 2007-09-10 2008-09-01 真空处理系统及基板搬送方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-233724 2007-09-10
JP2007233724A JP2009062604A (ja) 2007-09-10 2007-09-10 真空処理システムおよび基板搬送方法

Publications (1)

Publication Number Publication Date
WO2009034869A1 true WO2009034869A1 (fr) 2009-03-19

Family

ID=40451878

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065672 WO2009034869A1 (fr) 2007-09-10 2008-09-01 Système de traitement sous vide et procédé de transfert de substrat

Country Status (5)

Country Link
JP (1) JP2009062604A (fr)
KR (1) KR20100065127A (fr)
CN (1) CN101688296A (fr)
TW (1) TW200931577A (fr)
WO (1) WO2009034869A1 (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040538A1 (fr) * 2009-10-02 2011-04-07 東京エレクトロン株式会社 Système de traitement de substrats
TWI408766B (zh) * 2009-11-12 2013-09-11 Hitachi High Tech Corp Vacuum processing device
CN101958231A (zh) * 2010-05-06 2011-01-26 东莞宏威数码机械有限公司 气体环境缓冲装置
KR20120015987A (ko) * 2010-08-12 2012-02-22 삼성전자주식회사 기판 처리 시스템
JP5785712B2 (ja) * 2010-12-28 2015-09-30 株式会社日立ハイテクノロジーズ 真空処理装置
KR101254721B1 (ko) * 2011-03-30 2013-04-15 삼성전자주식회사 이에프이엠 버퍼 모듈
JP5750328B2 (ja) * 2011-07-20 2015-07-22 株式会社ニューフレアテクノロジー 気相成長方法及び気相成長装置
JP5923288B2 (ja) * 2011-12-01 2016-05-24 株式会社日立ハイテクノロジーズ 真空処理装置及び真空処理装置の運転方法
CN103184427A (zh) * 2011-12-28 2013-07-03 绿种子科技(潍坊)有限公司 薄膜沉积装置及其使用方法
KR101318929B1 (ko) * 2012-06-18 2013-10-17 주식회사 씨엘디 가압 장치
KR101375646B1 (ko) * 2012-06-18 2014-03-18 주식회사 씨엘디 가압 장치 및 방법
JP6120621B2 (ja) * 2013-03-14 2017-04-26 株式会社日立ハイテクノロジーズ 真空処理装置及びその運転方法
CN104421437B (zh) * 2013-08-20 2017-10-17 中微半导体设备(上海)有限公司 活动阀门、活动屏蔽门及真空处理系统
KR101649356B1 (ko) * 2014-01-20 2016-08-18 주식회사 풍산 반도체 기판 처리장치
JP2017028209A (ja) * 2015-07-27 2017-02-02 東京エレクトロン株式会社 基板収納方法及び基板処理装置
JP6141479B1 (ja) * 2016-03-18 2017-06-07 エスペック株式会社 乾燥装置
CN106229287B (zh) * 2016-09-30 2019-04-05 厦门市三安光电科技有限公司 用于转移微元件的转置头及微元件的转移方法
CN110835739A (zh) * 2018-08-17 2020-02-25 中智(泰兴)电力科技有限公司 7腔体立式pecvd-pvd一体化硅片镀膜工艺
CN110835735A (zh) * 2018-08-17 2020-02-25 中智(泰兴)电力科技有限公司 一种8腔体卧式hwcvd-pvd一体化硅片镀膜工艺
KR102618825B1 (ko) * 2020-01-06 2023-12-27 삼성전자주식회사 베이 내 가스 누출 방지를 위한 에어락 장치 및 제어 시스템
JP7386738B2 (ja) * 2020-03-19 2023-11-27 東京エレクトロン株式会社 基板搬送方法および基板処理装置
JP7420350B2 (ja) * 2020-04-24 2024-01-23 島根島津株式会社 自動保管モジュールおよび自動保管システム
JP7344236B2 (ja) * 2021-02-08 2023-09-13 キヤノントッキ株式会社 搬送装置、成膜装置及び制御方法
CN113122812B (zh) * 2021-04-20 2023-06-09 郑州航空工业管理学院 一种物理气相沉积材料加工设备
KR102452714B1 (ko) * 2021-12-23 2022-10-07 주식회사 에이치피에스피 고압 및 진공공정 병행 챔버장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319252A (ja) * 1989-05-19 1991-01-28 Applied Materials Inc 多重チャンバ真空式処理装置及び多重チャンバ真空式半導体ウェーハ処理装置
JPH04254349A (ja) * 1991-02-06 1992-09-09 Sony Corp マルチチャンバプロセス装置
JPH07211761A (ja) * 1994-01-21 1995-08-11 Tokyo Electron Ltd 処理装置内の被処理体の搬送方法
JP2003060008A (ja) * 2001-05-21 2003-02-28 Tokyo Electron Ltd 処理装置、移載装置、移載方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319252A (ja) * 1989-05-19 1991-01-28 Applied Materials Inc 多重チャンバ真空式処理装置及び多重チャンバ真空式半導体ウェーハ処理装置
JPH04254349A (ja) * 1991-02-06 1992-09-09 Sony Corp マルチチャンバプロセス装置
JPH07211761A (ja) * 1994-01-21 1995-08-11 Tokyo Electron Ltd 処理装置内の被処理体の搬送方法
JP2003060008A (ja) * 2001-05-21 2003-02-28 Tokyo Electron Ltd 処理装置、移載装置、移載方法

Also Published As

Publication number Publication date
TW200931577A (en) 2009-07-16
JP2009062604A (ja) 2009-03-26
KR20100065127A (ko) 2010-06-15
CN101688296A (zh) 2010-03-31

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