WO2009031585A1 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
WO2009031585A1
WO2009031585A1 PCT/JP2008/065893 JP2008065893W WO2009031585A1 WO 2009031585 A1 WO2009031585 A1 WO 2009031585A1 JP 2008065893 W JP2008065893 W JP 2008065893W WO 2009031585 A1 WO2009031585 A1 WO 2009031585A1
Authority
WO
WIPO (PCT)
Prior art keywords
section
correction processing
outputted
readout
imaging device
Prior art date
Application number
PCT/JP2008/065893
Other languages
English (en)
French (fr)
Inventor
Ryuji Kyushima
Harumichi Mori
Junichi Sawada
Kazuki Fujita
Masahiko Honda
Original Assignee
Hamamatsu Photonics K. K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics K. K. filed Critical Hamamatsu Photonics K. K.
Priority to KR1020097027235A priority Critical patent/KR101503944B1/ko
Priority to EP08829510.0A priority patent/EP2190186B1/en
Priority to CN2008801057866A priority patent/CN101796825B/zh
Priority to US12/676,282 priority patent/US8189084B2/en
Publication of WO2009031585A1 publication Critical patent/WO2009031585A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/672—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction between adjacent sensors or output registers for reading a single image
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Abstract

　固体撮像装置１は、受光部１０、信号読出部２０、制御部３０および補正処理部４０を備える。受光部１０では、入射光強度に応じた量の電荷を発生するフォトダイオードと、このフォトダイオードと接続された読出用スイッチと、を各々含むＭ×Ｎ個の画素部Ｐ１,１～ＰＭ,Ｎが、Ｍ行Ｎ列に２次元配列されている。各画素部Ｐｍ,ｎで発生した電荷は読出用配線ＬＯ,ｎを通って積分回路Ｓｎに入力され、その電荷量に応じて積分回路Ｓｎから出力された電圧値は保持回路Ｈｎを経て出力用配線Ｌoutへ出力される。補正処理部４０では、信号読出部２０から繰り返し出力される各フレームデータについて補正処理が行われ、その補正処理後のフレームデータが出力される。
PCT/JP2008/065893 2007-09-05 2008-09-03 固体撮像装置 WO2009031585A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097027235A KR101503944B1 (ko) 2007-09-05 2008-09-03 고체 촬상 장치
EP08829510.0A EP2190186B1 (en) 2007-09-05 2008-09-03 Solid-state imaging device
CN2008801057866A CN101796825B (zh) 2007-09-05 2008-09-03 固体摄像装置
US12/676,282 US8189084B2 (en) 2007-09-05 2008-09-03 Solid state imaging device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007230538A JP4912990B2 (ja) 2007-09-05 2007-09-05 固体撮像装置
JP2007-230538 2007-09-05

Publications (1)

Publication Number Publication Date
WO2009031585A1 true WO2009031585A1 (ja) 2009-03-12

Family

ID=40428899

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065893 WO2009031585A1 (ja) 2007-09-05 2008-09-03 固体撮像装置

Country Status (7)

Country Link
US (1) US8189084B2 (ja)
EP (1) EP2190186B1 (ja)
JP (1) JP4912990B2 (ja)
KR (1) KR101503944B1 (ja)
CN (1) CN101796825B (ja)
TW (1) TWI418213B (ja)
WO (1) WO2009031585A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2306708A1 (en) * 2008-07-17 2011-04-06 Hamamatsu Photonics K.K. Solid-state image pickup device
EP2315434A1 (en) * 2008-01-24 2011-04-27 Hamamatsu Photonics K.K. Solid-state imaging device and frame data correcting method
US8547464B2 (en) 2008-01-24 2013-10-01 Hamamatsu Photonics K.K. Solid-state imaging device and frame data correcting method which determine a voltage value corresponding to a pixel portion in frame data

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4927669B2 (ja) * 2007-09-05 2012-05-09 浜松ホトニクス株式会社 固体撮像装置
JP5971911B2 (ja) * 2011-09-29 2016-08-17 株式会社日立製作所 Ｘ線ｃｔ装置
JP6184761B2 (ja) * 2013-06-11 2017-08-23 浜松ホトニクス株式会社 固体撮像装置
DE102015213911B4 (de) * 2015-07-23 2019-03-07 Siemens Healthcare Gmbh Verfahren zum Erzeugen eines Röntgenbildes und Datenverarbeitungseinrichtung zum Ausführen des Verfahrens

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JP2000046645A (ja) * 1998-07-31 2000-02-18 Canon Inc 光電変換装置及びその製造方法及びｘ線撮像装置
JP2003296722A (ja) 2002-04-05 2003-10-17 Canon Inc 撮像装置及びその撮像方法
US6792159B1 (en) 1999-12-29 2004-09-14 Ge Medical Systems Global Technology Company, Llc Correction of defective pixels in a detector using temporal gradients
JP2005210164A (ja) * 2004-01-20 2005-08-04 Olympus Corp 欠陥画素補正装置
JP2006211069A (ja) * 2005-01-26 2006-08-10 Sony Corp 欠陥検出装置および欠陥検出方法、欠陥補正装置および欠陥補正方法、ならびに撮像装置
JP2006234557A (ja) 2005-02-24 2006-09-07 Shimadzu Corp Ｘ線画像補正方法およびｘ線検査装置

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US6118846A (en) 1999-02-23 2000-09-12 Direct Radiography Corp. Bad pixel column processing in a radiation detection panel
US6956216B2 (en) * 2000-06-15 2005-10-18 Canon Kabushiki Kaisha Semiconductor device, radiation detection device, and radiation detection system
JP4235510B2 (ja) * 2003-08-12 2009-03-11 富士フイルム株式会社 デジタルカメラ及び固体撮像装置
JP4558608B2 (ja) * 2005-08-25 2010-10-06 株式会社リコー 撮像装置および撮像装置における接続方法
US7982790B2 (en) * 2006-01-16 2011-07-19 Panasonic Corporation Solid-state imaging apparatus and method for driving the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000046645A (ja) * 1998-07-31 2000-02-18 Canon Inc 光電変換装置及びその製造方法及びｘ線撮像装置
US6792159B1 (en) 1999-12-29 2004-09-14 Ge Medical Systems Global Technology Company, Llc Correction of defective pixels in a detector using temporal gradients
JP2003296722A (ja) 2002-04-05 2003-10-17 Canon Inc 撮像装置及びその撮像方法
JP2005210164A (ja) * 2004-01-20 2005-08-04 Olympus Corp 欠陥画素補正装置
JP2006211069A (ja) * 2005-01-26 2006-08-10 Sony Corp 欠陥検出装置および欠陥検出方法、欠陥補正装置および欠陥補正方法、ならびに撮像装置
JP2006234557A (ja) 2005-02-24 2006-09-07 Shimadzu Corp Ｘ線画像補正方法およびｘ線検査装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2190186A4

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2315434A1 (en) * 2008-01-24 2011-04-27 Hamamatsu Photonics K.K. Solid-state imaging device and frame data correcting method
EP2315434A4 (en) * 2008-01-24 2011-04-27 Hamamatsu Photonics Kk SEMICONDUCTOR IMAGING DEVICE AND METHOD FOR CORRECTING FRAME DATA
US8294793B2 (en) 2008-01-24 2012-10-23 Hamamatsu Photonics K.K. Solid-state imaging device and frame data correcting method
US8547464B2 (en) 2008-01-24 2013-10-01 Hamamatsu Photonics K.K. Solid-state imaging device and frame data correcting method which determine a voltage value corresponding to a pixel portion in frame data
EP2306708A1 (en) * 2008-07-17 2011-04-06 Hamamatsu Photonics K.K. Solid-state image pickup device
EP2306708A4 (en) * 2008-07-17 2012-12-26 Hamamatsu Photonics Kk SOLID STATE IMAGE CRADLE
US8625741B2 (en) 2008-07-17 2014-01-07 Hamamatsu Photonics K.K. Solid-state image pickup device

Also Published As

Publication number Publication date
JP4912990B2 (ja) 2012-04-11
TWI418213B (zh) 2013-12-01
US8189084B2 (en) 2012-05-29
KR20100047826A (ko) 2010-05-10
CN101796825A (zh) 2010-08-04
EP2190186A1 (en) 2010-05-26
US20100194937A1 (en) 2010-08-05
TW200931960A (en) 2009-07-16
JP2009065375A (ja) 2009-03-26
CN101796825B (zh) 2012-07-04
KR101503944B1 (ko) 2015-03-18
EP2190186A4 (en) 2011-04-27
EP2190186B1 (en) 2016-05-04

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