WO2009028337A1 - 熱電変換モジュールおよびその製造方法 - Google Patents
熱電変換モジュールおよびその製造方法 Download PDFInfo
- Publication number
- WO2009028337A1 WO2009028337A1 PCT/JP2008/064623 JP2008064623W WO2009028337A1 WO 2009028337 A1 WO2009028337 A1 WO 2009028337A1 JP 2008064623 W JP2008064623 W JP 2008064623W WO 2009028337 A1 WO2009028337 A1 WO 2009028337A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thermoelectric conversion
- material layer
- conversion material
- type thermoelectric
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
熱電変換モジュールは、絶縁層(12)と、前記絶縁層(12)の表面に形成され、温度差方向(90)に沿ってそれぞれ延在し、なおかつ互いに直列に電気的に接続されたn型熱電変換材料層(14)とp型熱電変換材料層(13)とを備える熱電変換モジュールであり、n型熱電変換材料層とp型熱電変換材料層とで前記温度差方向に垂直な面で切った断面積が等しい構成の場合に比べて熱電変換モジュール全体の抵抗が小さくなるように、n型熱電変換材料層(14)およびp型熱電変換材料層(13)のうち抵抗率の高い方の層の前記断面積が抵抗率の低い方の層の前記断面積よりも大きくなっている。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-220055 | 2007-08-27 | ||
| JP2007220055 | 2007-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009028337A1 true WO2009028337A1 (ja) | 2009-03-05 |
Family
ID=40387063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/064623 Ceased WO2009028337A1 (ja) | 2007-08-27 | 2008-08-15 | 熱電変換モジュールおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2009028337A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022092039A1 (ja) * | 2020-10-30 | 2022-05-05 | 日本ゼオン株式会社 | 熱電変換モジュール及び熱電変換モジュールの製造方法 |
| CN116325475A (zh) * | 2020-09-30 | 2023-06-23 | 日本瑞翁株式会社 | 热电转换模块及热电转换模块的制造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11177154A (ja) * | 1997-12-09 | 1999-07-02 | Murata Mfg Co Ltd | 熱電変換基板及び当該熱電変換基板を用いた電気回路装置 |
| JP2000286462A (ja) * | 1999-03-29 | 2000-10-13 | Sanyo Electric Co Ltd | 熱電素子、熱電素子の製造方法 |
| JP2007500951A (ja) * | 2003-05-19 | 2007-01-18 | アプライド ディジタル ソリューションズ | 低電力熱電発電装置 |
| JP2007095897A (ja) * | 2005-09-28 | 2007-04-12 | Toshiba Corp | 半導体装置とその製造方法 |
-
2008
- 2008-08-15 WO PCT/JP2008/064623 patent/WO2009028337A1/ja not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11177154A (ja) * | 1997-12-09 | 1999-07-02 | Murata Mfg Co Ltd | 熱電変換基板及び当該熱電変換基板を用いた電気回路装置 |
| JP2000286462A (ja) * | 1999-03-29 | 2000-10-13 | Sanyo Electric Co Ltd | 熱電素子、熱電素子の製造方法 |
| JP2007500951A (ja) * | 2003-05-19 | 2007-01-18 | アプライド ディジタル ソリューションズ | 低電力熱電発電装置 |
| JP2007095897A (ja) * | 2005-09-28 | 2007-04-12 | Toshiba Corp | 半導体装置とその製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116325475A (zh) * | 2020-09-30 | 2023-06-23 | 日本瑞翁株式会社 | 热电转换模块及热电转换模块的制造方法 |
| WO2022092039A1 (ja) * | 2020-10-30 | 2022-05-05 | 日本ゼオン株式会社 | 熱電変換モジュール及び熱電変換モジュールの製造方法 |
| JPWO2022092039A1 (ja) * | 2020-10-30 | 2022-05-05 | ||
| EP4239698A4 (en) * | 2020-10-30 | 2024-10-09 | Zeon Corporation | THERMOELECTRIC CONVERSION MODULE AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE |
| US12538707B2 (en) | 2020-10-30 | 2026-01-27 | Zeon Corporation | Thermoelectric conversion module and method of producing thermoelectric conversion module |
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