WO2009028282A1 - 新規ナノ粒子発光体 - Google Patents

新規ナノ粒子発光体 Download PDF

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Publication number
WO2009028282A1
WO2009028282A1 PCT/JP2008/063352 JP2008063352W WO2009028282A1 WO 2009028282 A1 WO2009028282 A1 WO 2009028282A1 JP 2008063352 W JP2008063352 W JP 2008063352W WO 2009028282 A1 WO2009028282 A1 WO 2009028282A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor
nanoparticle
luminescent material
luminescence
peak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063352
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English (en)
French (fr)
Inventor
Norio Murase
Ping Yang
Masanori Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to US12/675,924 priority Critical patent/US20100252778A1/en
Priority to JP2009530024A priority patent/JP5371011B2/ja
Publication of WO2009028282A1 publication Critical patent/WO2009028282A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本発明は、発光する半導体ナノ粒子の表面処理において、従来避け難かった格子定数や立体障害による表面状態の不完全さを減少させることを課題とした。この課題を解決することにより、発光効率の増大、発光スペクトル幅の減少、化学的耐久性の増大を実現し、優れた発光材料を提供する。 平均粒径が２ナノメートル以上かつ１２ナノメートル以下でありバンドギャップが３．８エレクトロンボルト以下の半導体ナノ粒子が、ケイ素を含む層で被覆された発光材料であって、該発光材料中の半導体ナノ粒子の発光波長のピークが、半導体ナノ粒子単独が示す発光波長のピークよりも２０ナノメートル以上長波長側に位置することを特徴とする発光材料。
PCT/JP2008/063352 2007-08-28 2008-07-25 新規ナノ粒子発光体 Ceased WO2009028282A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/675,924 US20100252778A1 (en) 2007-08-28 2008-07-25 Novel nanoparticle phosphor
JP2009530024A JP5371011B2 (ja) 2007-08-28 2008-07-25 新規ナノ粒子発光体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007220679 2007-08-28
JP2007-220679 2007-08-28

Publications (1)

Publication Number Publication Date
WO2009028282A1 true WO2009028282A1 (ja) 2009-03-05

Family

ID=40387010

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063352 Ceased WO2009028282A1 (ja) 2007-08-28 2008-07-25 新規ナノ粒子発光体

Country Status (3)

Country Link
US (1) US20100252778A1 (ja)
JP (1) JP5371011B2 (ja)
WO (1) WO2009028282A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012161065A1 (ja) * 2011-05-23 2012-11-29 独立行政法人産業技術総合研究所 薄膜シリカガラスコート量子ドットからなる蛍光性微粒子及びその製造方法
JP2012532953A (ja) * 2009-07-08 2012-12-20 サムスン エレクトロニクス カンパニー リミテッド 半導体ナノ結晶及びその調製方法
JP2013502515A (ja) * 2009-08-24 2013-01-24 カンブリオス テクノロジーズ コーポレイション 金属ナノ構造体から作られる透明導電体におけるヘーズの改善のための金属ナノ構造体の精製
JP2014027223A (ja) * 2012-07-30 2014-02-06 Kyocera Corp 量子ドット粒子およびその製造方法、ならびに太陽電池
JPWO2012133047A1 (ja) * 2011-03-25 2014-07-28 コニカミノルタ株式会社 免疫組織染色法、およびこれを用いた抗体医薬の有効性を判定する方法
US9410082B2 (en) 2013-11-25 2016-08-09 Sharp Kabushiki Kaisha Semiconductor phosphor nanoparticle and light-emitting device including the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2775324C (en) 2009-09-23 2018-05-15 Crystalplex Corporation Passivated nanoparticles
US20140339497A1 (en) * 2011-06-20 2014-11-20 Crystalplex Corporation Stabilized nanocrystals
WO2013123390A1 (en) 2012-02-16 2013-08-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
JPWO2014208478A1 (ja) * 2013-06-25 2017-02-23 コニカミノルタ株式会社 発光体材料、その製造方法、光学フィルム及び発光デバイス
EP3148712B1 (en) 2014-05-29 2021-08-18 Crystalplex Corporation Dispersion system for quantum dots
EP3458544A4 (en) 2016-05-19 2020-04-08 Crystalplex Corporation CADMIUM-FREE QUANTUM BOXES, TUNABLE QUANTUM BOXES, POLYMER CONTAINING QUANTUM BOXES, ARTICLES, FILMS, 3D STRUCTURE CONTAINING THEM AND METHODS OF MAKING AND USING THE SAME

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000265166A (ja) * 1999-01-14 2000-09-26 Sony Corp 蛍光体及びその製造方法
JP2003321226A (ja) * 2002-02-27 2003-11-11 National Institute Of Advanced Industrial & Technology 半導体超微粒子含有シリカ系ガラス粒子材料およびデバイス
JP2005068326A (ja) * 2003-08-26 2005-03-17 Futaba Corp ナノクリスタル蛍光体及びその製造方法
JP2006322001A (ja) * 2005-05-16 2006-11-30 Samsung Electro Mech Co Ltd コーティングされたナノ粒子およびそれを利用した電子素子
WO2007034877A1 (ja) * 2005-09-22 2007-03-29 National Institute Of Advanced Industrial Science And Technology 半導体ナノ粒子分散ガラス微粒子及びその作製方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1541656A4 (en) * 2002-06-19 2007-11-14 Nat Inst Of Advanced Ind Scien AT LEAST PARTIAL OF A FLEXIBLE SEMICONDUCTOR AND LIGHT EMITTING DEVICE
JP4604246B2 (ja) * 2005-03-10 2011-01-05 独立行政法人産業技術総合研究所 高濃度に半導体ナノ粒子が分散した蛍光体及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000265166A (ja) * 1999-01-14 2000-09-26 Sony Corp 蛍光体及びその製造方法
JP2003321226A (ja) * 2002-02-27 2003-11-11 National Institute Of Advanced Industrial & Technology 半導体超微粒子含有シリカ系ガラス粒子材料およびデバイス
JP2005068326A (ja) * 2003-08-26 2005-03-17 Futaba Corp ナノクリスタル蛍光体及びその製造方法
JP2006322001A (ja) * 2005-05-16 2006-11-30 Samsung Electro Mech Co Ltd コーティングされたナノ粒子およびそれを利用した電子素子
WO2007034877A1 (ja) * 2005-09-22 2007-03-29 National Institute Of Advanced Industrial Science And Technology 半導体ナノ粒子分散ガラス微粒子及びその作製方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532953A (ja) * 2009-07-08 2012-12-20 サムスン エレクトロニクス カンパニー リミテッド 半導体ナノ結晶及びその調製方法
US9570549B2 (en) 2009-07-08 2017-02-14 Samsung Electronics Co., Ltd. Semiconductor nanocrystal and preparation method thereof
US10759992B2 (en) 2009-07-08 2020-09-01 Samsung Electronics Co., Ltd. Semiconductor nanocrystal and preparation method thereof
US11898073B2 (en) 2009-07-08 2024-02-13 Samsung Electronics Co., Ltd. Semiconductor nanocrystal and preparation method thereof
JP2013502515A (ja) * 2009-08-24 2013-01-24 カンブリオス テクノロジーズ コーポレイション 金属ナノ構造体から作られる透明導電体におけるヘーズの改善のための金属ナノ構造体の精製
JPWO2012133047A1 (ja) * 2011-03-25 2014-07-28 コニカミノルタ株式会社 免疫組織染色法、およびこれを用いた抗体医薬の有効性を判定する方法
WO2012161065A1 (ja) * 2011-05-23 2012-11-29 独立行政法人産業技術総合研究所 薄膜シリカガラスコート量子ドットからなる蛍光性微粒子及びその製造方法
JP5709188B2 (ja) * 2011-05-23 2015-04-30 独立行政法人産業技術総合研究所 薄膜シリカガラスコート量子ドットからなる蛍光性微粒子及びその製造方法
JP2014027223A (ja) * 2012-07-30 2014-02-06 Kyocera Corp 量子ドット粒子およびその製造方法、ならびに太陽電池
US9410082B2 (en) 2013-11-25 2016-08-09 Sharp Kabushiki Kaisha Semiconductor phosphor nanoparticle and light-emitting device including the same

Also Published As

Publication number Publication date
JPWO2009028282A1 (ja) 2010-11-25
US20100252778A1 (en) 2010-10-07
JP5371011B2 (ja) 2013-12-18

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