WO2009028256A1 - 化学機械研磨用水系分散体調製用セットおよび化学機械研磨用水系分散体の調製方法 - Google Patents

化学機械研磨用水系分散体調製用セットおよび化学機械研磨用水系分散体の調製方法 Download PDF

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Publication number
WO2009028256A1
WO2009028256A1 PCT/JP2008/061428 JP2008061428W WO2009028256A1 WO 2009028256 A1 WO2009028256 A1 WO 2009028256A1 JP 2008061428 W JP2008061428 W JP 2008061428W WO 2009028256 A1 WO2009028256 A1 WO 2009028256A1
Authority
WO
WIPO (PCT)
Prior art keywords
aqueous dispersion
mechanical polishing
chemical mechanical
preparation
composition containing
Prior art date
Application number
PCT/JP2008/061428
Other languages
English (en)
French (fr)
Inventor
Tsuyoshi Yano
Hirotaka Shida
Kazuhito Uchikura
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2009530015A priority Critical patent/JPWO2009028256A1/ja
Publication of WO2009028256A1 publication Critical patent/WO2009028256A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Abstract

　本発明に係る化学機械研磨用水系分散体調製用セットは、コロイダルシリカおよび塩基性化合物を含み、ｐＨが８以上１０以下である、第１の組成物と、ポリ（メタ）アクリル酸塩および塩基性化合物を含み、ｐＨが１１以上１３．５以下である、第２の組成物と、を備えている。さらに、酸化剤を含む、第３の組成物を備えることもできる。
PCT/JP2008/061428 2007-08-31 2008-06-24 化学機械研磨用水系分散体調製用セットおよび化学機械研磨用水系分散体の調製方法 WO2009028256A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530015A JPWO2009028256A1 (ja) 2007-08-31 2008-06-24 化学機械研磨用水系分散体調製用セットおよび化学機械研磨用水系分散体の調製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007225415 2007-08-31
JP2007-225415 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028256A1 true WO2009028256A1 (ja) 2009-03-05

Family

ID=40386985

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061428 WO2009028256A1 (ja) 2007-08-31 2008-06-24 化学機械研磨用水系分散体調製用セットおよび化学機械研磨用水系分散体の調製方法

Country Status (3)

Country Link
JP (1) JPWO2009028256A1 (ja)
TW (1) TW200919568A (ja)
WO (1) WO2009028256A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101906346A (zh) * 2009-06-02 2010-12-08 日信化学工业株式会社 水性切削液和浆
JP2020132479A (ja) * 2019-02-21 2020-08-31 三菱ケミカル株式会社 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006287207A (ja) * 2005-03-09 2006-10-19 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007060869A1 (ja) * 2005-11-24 2007-05-31 Jsr Corporation 化学機械研磨用水系分散体および化学機械研磨方法
JP5182483B2 (ja) * 2005-12-16 2013-04-17 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006287207A (ja) * 2005-03-09 2006-10-19 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101906346A (zh) * 2009-06-02 2010-12-08 日信化学工业株式会社 水性切削液和浆
JP2011012249A (ja) * 2009-06-02 2011-01-20 Nisshin Chem Ind Co Ltd 水性切削液及び水性切削剤
JP2020132479A (ja) * 2019-02-21 2020-08-31 三菱ケミカル株式会社 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

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Publication number Publication date
TW200919568A (en) 2009-05-01
JPWO2009028256A1 (ja) 2010-11-25

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