TW200919568A - Set for preparation of aqueous dispersion for chemical mechanical polishing and method for preparing aqueous dispersion for chemical mechanical polishing - Google Patents

Set for preparation of aqueous dispersion for chemical mechanical polishing and method for preparing aqueous dispersion for chemical mechanical polishing Download PDF

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Publication number
TW200919568A
TW200919568A TW97127579A TW97127579A TW200919568A TW 200919568 A TW200919568 A TW 200919568A TW 97127579 A TW97127579 A TW 97127579A TW 97127579 A TW97127579 A TW 97127579A TW 200919568 A TW200919568 A TW 200919568A
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Taiwan
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composition
chemical mechanical
mechanical polishing
water
dispersion
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TW97127579A
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Chinese (zh)
Inventor
Tsuyoshi Yano
Hirotaka Shida
Kazuhito Uchikura
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Jsr Corp
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Abstract

Disclosed is a set for preparation of an aqueous dispersion for chemical mechanical polishing, which comprises a first composition containing a colloidal silica and a basic compound and having a pH of not less than 8 but not more than 10, and a second composition containing a poly(meth)acrylate and a basic compound and having a pH of not less than 11 but not more than 13.5. The set for preparation of an aqueous dispersion may further comprise a third composition containing an oxidizing agent.

Description

200919568 九、發明說明: 【發明所屬之技術領域】 本發明係關於化學機械研磨用水系分散體調製用套紐 及化學機械研磨用水系分散體之調製方法。 【先前技術】 近年來,隨著半導體I置之高積體化、多層饰線化,化 學機械研磨所進行之平坦化技術受到嗎目。於進行化學機 械研磨#所使用之化學機械研磨用水系分散體(以下亦稱 :「漿料」)中,通常調配有研磨粒作為研磨劑。作為研 1粒’已提案有各種類’例如日本專利特開2()g3_289〇55 2公報記載之氣相:氧切(fumedsiliGa)、膠體二氧化 、乳化銘、氧化料之無機粒子;聚甲基丙烯酸甲醋等 粒子;使此等物理性或化學性結合之有機無機複合 l: 浆料中不僅只有研磨粒,視需要尚調配有其他之 ::、有機酸、界面活性劑等之各種成分。因此,習知 ί性2長期保存而發生研磨粒之凝集等研磨粒分散穩 王足問題。如此,研磨粒凝隼祐 械研磨m 浆料係使化學機 之月士支。例如,由於過度地研磨佈線部分,而 謂「淺碟化(dishing)」或「侵钮(伽酿)」之 陷等^形。又’亦有發生所謂「到痕」之抓傷狀表面缺 系分4二尤其是在以經濃縮狀態提供化學機械研磨用水 政體呀,此種問題變得顯著,而期盼其改善。 另外’若對銅或銅合金等之金屬膜進行化學:械研磨, 97127579 200919568 則有所謂「腐心QrrQsiQn)」 發生,一般係於漿料中添加苯 ”、、"“匕腐蝕 由於此防蝕劑之生物分解性較低Λ女之防蝕劑。然而, 劑之裝料廢液的問題。因二=以處理含有_ 料。 寺開心出不含防钱劑之漿 【發明内容】 本發明之目的在於提供一種 © JI2. +θ /. , 、化子機械研磨之被研磨 面:千坦化步财,可抑制遷碟化、侵 = 之表面缺陷的化學機械研磨用水系分 腐蝕專 及即使在濃縮狀態下長期伴存 _製方法,以 研磨用水系分散體㈣用套組。 Μ化予機械 本發明之化學機械研磨用水系 備:第1組成物,係含有#體广/ 3D製套組係具200919568 IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a method for preparing a chemical mechanical polishing aqueous dispersion preparation kit and a chemical mechanical polishing aqueous dispersion. [Prior Art] In recent years, with the high integration of the semiconductor I and the multi-layer trimming, the planarization technology by chemical mechanical polishing has attracted attention. In the chemical mechanical polishing aqueous dispersion (hereinafter also referred to as "slurry" used in the chemical mechanical polishing #, abrasive grains are usually blended as an abrasive. In the gas phase described in Japanese Patent Laid-Open No. 2 () g3_289〇55 2, the gas phase described in the publication: fumedsiliGa, colloidal dioxide, emulsification, and inorganic particles of oxidized material; Particles such as methyl vinegar, etc.; organic or inorganic composites that combine these physical or chemical properties: The slurry contains not only abrasive particles, but also other components such as organic acids and surfactants. . Therefore, it is known that the long-term preservation of the θ 2 is caused by the agglomeration of the abrasive grains and the like. In this way, the abrasive granules are used to grind the m slurry to make the chemical machine. For example, since the wiring portion is excessively polished, it is called "dishing" or "invading button". In addition, there is also a scratch-like surface defect in the so-called "to the mark". In particular, in the case of providing a chemical mechanical polishing water regime in a concentrated state, such a problem becomes remarkable and it is expected to improve. In addition, if chemical processing is carried out on a metal film such as copper or copper alloy, mechanical grinding, 97127579 200919568, there is a so-called "corrosive QrrQsiQn". Generally, benzene is added to the slurry, and "" corrosion is caused by this corrosion inhibitor. It is a biodegradable anti-corrosive agent for prostitutes. However, the problem of the charging liquid of the agent. Because two = to process the containing material. The temple is happy to produce a slurry containing no anti-money agent. [Invention] The object of the present invention is to provide a surface to be grounded by JI2. +θ /. , and mechanical polishing of the chemical body: The chemical mechanical polishing of the surface defects of the intrusion = the corrosion of the water system and the long-term accompanying method in the concentrated state, the grinding water dispersion (4) is used for the set. Μ化予机械 The chemical mechanical polishing water system of the present invention: the first composition, which contains the #体广/3D system kit

為8以…η 氧化矽及鹼性化合物,PH 為8以上且10以下;與第2组成物,係含有 稀酸鹽及驗性化合物,pH4u以上幻3 5以下。土)The ruthenium oxide and the basic compound are 8 to η, and the pH is 8 or more and 10 or less; and the second composition contains a dilute acid salt and an organic compound, and the pH is 4u or more and 3 or less. earth)

U 本發明之化學機械研磨用水系分散體調製用套细中,上 述第2組成物可進一步含有界面活性劑。 、 本發明之化學機械研磨用水系分散體調製用套組中,上 述界面活性劑可為選自乙炔—_ 目〇炔一知、乙炔一醇之環氧乙烷加 成物及乙炔醇的至少1種。 本發明之化學機械研磨用水系分散體調製用套組中,上 述第2組成物可進一步含有酸性化合物。 本發明之化學機械研磨用水系分散體調製用套組中,上 述酸性化合物可為選自喹啉羧酸、喹啉酸、順丁烯二酸、 97127579 200919568 丙二酸、檸檬酸及蘋果酸之至少1種。 本發明之化學機械研磨用八 述膠體二氧化矽之平”刀政體調製用套组中,上 士武…均一次粒徑可為30mn〜l〇0nm。 本舍明之化學機械研磨用 、f枣r w i、 呷靨用水系分散體調製用套組中,上 述K甲基)丙稀酸鹽 ^中上 500, 000〜3, 000, 000。 里千均分子量可為 本發明之化學機械研磨用 谁一牛且供人士 p >矛、刀放體调製用套組中,可 進步八備3有氧化劑之第3組成物。 合本機::磨用水系分散體之調製方法* 有膠體二氧化秒及驗性化合物 稀酸鹽及鹼性化合物,沖為^物,係含有聚(甲基)丙 製PH為8以上且12以 心且13. 5以下’·而調 ^ r<化予機械研磨用水系分散體。 進本機械研磨用水系分散體之調製方:;可 進步〜合含有氧化劑之第3 έ日士札 μ θ 10、 刎弟3組成物,而調製pH為8以 以下之化學機械研磨用水系分散體。 根,本發明,由於可分別保管第i組成物與第2組成 止第1組成物中所含之谬體二氧切的凝集。 弟L且成物係排除引起膠體二氧化石夕凝集之成分,藉由添 加驗性化合物而將pH調整為8〜1〇者。若pH在HO之範 抑制膠體二氧切與驗性化合物之反應,並可 =來自W光譜之、的信號面積所算出之石夕烧醇 基數維持在適當值等,而可防止膠體二氧化石夕之變質。因 此’即使在使第1组成物遭縮的狀態下亦可確保膠體二氧 97127579 200919568 化石夕之長期穩定性。 添成:由 PH為1H3.5之範圍 第:2、、且成物之 成物,調製_〜12之化4 1組成物與第2組 制金屬I:二 用水系分散體由於顯示驗性,故可抑 η 又,:生’不需要添加苯并三唾般之_。 之平班化:驟:化矽之凝集或變質較少,故於被研磨面 缺:驟中可抑制以淺碟化、侵韻或刮痕為首之表面 【實施方式】 本發明之化學機械研磨用水系分散 備:第1組成物,传含有帅一 Α 展用套組係具In the chemical mechanical polishing aqueous dispersion preparation of the present invention, the second composition may further contain a surfactant. In the chemical mechanical polishing aqueous dispersion preparation kit of the present invention, the surfactant may be at least one selected from the group consisting of acetylene- acetylene, ethylene oxide adduct of acetylene alcohol, and at least acetylene alcohol. 1 species. In the chemical mechanical polishing aqueous dispersion preparation kit of the present invention, the second composition may further contain an acidic compound. In the chemical mechanical polishing aqueous dispersion preparation kit of the present invention, the acidic compound may be selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, maleic acid, 97127579 200919568 malonic acid, citric acid, and malic acid. At least one. In the chemical mechanical polishing of the octagonal colloidal cerium oxide bismuth in the chemical mechanical polishing, the squadron of the squadron can be 30mn~l〇0nm. The chemical mechanical polishing of the present invention, f jujube In the rwi, 呷靥 water-based dispersion preparation kit, the above K methyl) acrylate acid salt is above 500, 000~3, 000, 000. The average molecular weight can be used for the chemical mechanical polishing of the present invention. One cow and the person in the p > spear, knife release body modulation kit, can improve the third composition of the third preparation 3 with oxidant. The machine:: the preparation method of the grinding water dispersion * has colloidal two The oxidized second and the test compound dilute acid salt and the basic compound are pulverized into a substance containing a poly(methyl) propylene to have a pH of 8 or more and 12 to the heart and 13.5 or less and to adjust the r < Mechanically Grinding Water Dispersion. The preparation of the mechanical polishing water dispersion: The progress can be improved to the third έ 札 μ μ θ 10, 刎 3 composition containing oxidizing agent, and the pH is adjusted to 8 or less. The chemical mechanical polishing aqueous dispersion is used. According to the present invention, the ith composition and the second component can be separately stored. The agglutination of the steroid dioxin contained in the first composition is stopped. The L and the adult system are excluded from the components causing colloidal silica dioxide agglutination, and the pH is adjusted to 8 to 1 by adding an inspecting compound. If the pH is in the HO range, the reaction between the colloidal dioxin and the test compound is inhibited, and the number of the sulphuric acid base calculated from the signal area of the W spectrum can be maintained at an appropriate value, etc., and the colloidal body can be prevented. The oxidized stone is deteriorated. Therefore, even in the state where the first composition is shrunk, the long-term stability of the colloidal dioxygen 97127579 200919568 fossil can be ensured. Addition: The range of PH is 1H3.5: 2. And the composition of the product, the preparation of the composition of the composition of the composition of the composition of the composition of the second group of metal I: the two aqueous dispersions because of the testability, it can inhibit η,: raw 'do not need to add benzene Three saliva _. The flat class: the sudden: the agglomeration or deterioration of the phlegm is less, so the surface is missing: the surface can be suppressed by shallow disc, invading or scratching [Embodiment] The chemical mechanical polishing water of the present invention is prepared by dispersing: the first composition, which contains a handsome exhibition Set harness

為8以上且及驗性化合物,PH 烯酸趟及鹼降 、、、且成物,係含有聚(甲基)丙 烯駄鹽及鹼性化合物,PH為11以上且13 5以下 本發明之較佳實施態樣,進行詳細說 1.第1組成物 化二:^^組成物’係含有膠體二氧化石夕與驗性 口 4、、且成物之液性係由確㈣體二氧化梦之分 觀點而言,調整為PH8〜10之弱鹼性。以 對各成分進行詳細說明。 1. 1膠體二氧化矽 作為第1組成物所使用之膠體二氧化矽,可舉例 以精製將雜質去除之無機膠體法等所合成的膠體二二匕 97127579 8 200919568 〇 體二氧切之平均—絲徑較佳為 幺25〜35nm。又,上述膠體二氧化矽之 更 為30〜l00nm、更佳4"〇nm 卜:人粒徑較佳 均粒徑的膠體二氧化石夕,則可達成述範圍内之平 速度的均衡。 成良好之被研磨面與研磨 Γ 非會合膠體二氧切粒子隨機抽製):觀察的 徑,並以其平均值表示。 個,求取各粒 膠體二氧化秒之平均二斤 作所:份有可=動態先散 之二次粒子之粒徑。膠體二M = Z粒子凝集而形成 性研磨作用時,通常形成二次粒子。子破研磨面進行機械 第1組成物所含有之膠體二氧 29Si-NMR光譜之信號面積所算出。之矽烷醇基數係由 上述第1組成物所含有之膠 譜,可藉將含有二氧化 / —虱化矽之%卜丽反光 體、或自化學機械研磨用水二2 =研磨用水系分散 濾等之公知方法所回收 错離心分離或超膜過 子之分散體、二氧化發粒二:教子成分、二氧化秒粒 可自來自如此所得之、i ^知方法進行測定而得。 下式⑴之計算式算出石夕燒醇基九數,之、i的信號面積,藉 97127579 200919568 譜藉夸值分離處理進行峰值^體二氧化石夕之、卜_光 原子設為〇_時之化學位;將在使四甲基錢之石夕 Qi’將其信號面積設為⑴為:,卿之峰值判斷為 將其信號面積判斷設為a2,將:2:之峰值判斷為卯’ 將其信號面積判斷設為二= 為以,將其信號面積判斷設為3將約韻剛之峰值判斷 Γ: 二'1^^子鄰接™配位數為 —-認㈣其式量為 位數為2之石夕原子,可將原子鄰接之石夕原子的配 為凡心〜。認為Q3=2=Sl〇_’其式量 配位數為3之W子,可將原子鄰接之梦原子的 式量為叫…為,4、 量為㈣81丄 可將組成式表示為抓,其式 二 =二數分么”信號,“、a-、一 醇基數可依照下述-般式粒子所含之石夕燒 (數1)The compound of 8 or more and the test compound, the p- enoate and the base drop, and the compound thereof contain a poly(meth) propylene sulfonium salt and a basic compound, and the pH is 11 or more and 13 5 or less. Good implementation, detailed description 1. The first composition of physicochemical two: ^ ^ composition ' contains colloidal silica dioxide and test mouth 4, and the liquid phase of the product from the (four) body dioxide dream From a point of view, it is adjusted to be weakly alkaline at pH 8 to 10. The components are described in detail. 1. Colloidal cerium oxide as the colloidal cerium oxide used in the first composition, for example, the colloidal dioxin synthesized by the inorganic colloid method for removing impurities, and the like, the average of the steroids of the steroids - 97127579 8 200919568 The wire diameter is preferably 幺25 to 35 nm. Further, the above-mentioned colloidal cerium oxide is more preferably 30 to 100 nm, more preferably 4 " 〇 nm 卜: colloidal silica having a preferred particle diameter of the human particles, and the equilibrium of the flatness in the range can be achieved. A good surface to be ground and ground Γ Non-confined colloidal dioxin particles are randomly drawn): The diameter of the observation is expressed as the average value. For each particle, the average of two seconds of colloidal oxidation seconds: the number of particles can be = dynamic first scattered secondary particles. When colloidal M = Z particles aggregate and form a grinding action, secondary particles are usually formed. The sub-broken surface was calculated from the signal area of the colloidal dioxygen 29Si-NMR spectrum contained in the first composition. The number of decyl alcohol groups is the spectrum contained in the first composition, and may be obtained by containing a cerium dioxide containing cerium oxide or cerium oxide, or a chemical mechanical polishing water 2 = grinding water dispersion filtration, etc. The dispersion of the erroneously centrifuged or super-membrane recovered by the known method, the oxidized hair granule 2: the teaching component, and the oxidized second particle can be obtained by measuring the thus obtained method. The calculation formula of the following formula (1) is used to calculate the signal area of the nine-phase, i, and i, by the 97127579 200919568 spectrum by the exaggeration separation process for the peak ^ body of the oxidized stone, the _ light atom is set to 〇 _ The chemical position; will be set to (1) as the signal area of the tetramethyl Qianshi Xi'i:, the peak value of Qing is judged to be the signal area judgment is set to a2, and the peak of 2: is judged as 卯' The signal area is judged to be two = Yes, and the signal area judgment is set to 3 to judge the peak value of the rhyme: 二: Two '1^^ sub-adjacent TM coordination number is -- (4) The formula is the number of bits For the 2 stone eve atom, the atomic argon atom can be assigned to the atomic ~. It is considered that Q3=2=Sl〇_' is a W sub-quantity with a number of bits, and the formula of the atomic atom adjacent to the atom is called..., and the quantity is (four) 81丄, and the composition is expressed as scratch. The formula 2 = two points "signal,", a-, and one alcohol base number can be in accordance with the following general-style particle inclusions (number 1)

於此,Να表示亞佛加厥常數:6 〇22xi〇u。 上述膠體二氧切之錢醇基數較佳^ ;摘23· 97127579 10 200919568 以上且4.〇χ1〇23個/g以下,更佳為36乂1〇23個 3.8XlQ23個/g以下。在從%卜_光譜之信號面積所^ 的撕基數為上述範圍内的情況,由於二氧切:;: ,,故提升二氧切粒子之強度,可得到充分 速 f °再者’藉由適度之量的錢醇基數與水系分散媒進^ -相^作用而呈穩定化,二氧化石夕粒子於化學機械: ^分散體中可敎地分散,於研磨時不致發生成為缺陷原 ;若我醇基數超過上述範圍,則有二氧切粒 緻而發生變質的情形,無法得到充分之研磨 速又^生刮痕等之缺陷,故不佳。一 基數未滿上述範圍的情況,_I 矽烷醇 用水系分散趙㈣::差;:=:學機械研磨 在被研磨物上發生到痕等之缺陷,故不佳。 研磨夺 尚且,如後述般,於第1細 物。已知驗性化合物與突出於=物加驗性化合 υ基將造成料交換仙錢鍵1 ^面之發烧醇 此,發生膠體二氧化石夕的變質鍵之相互作用。因 =磨面的表面缺陷的情形。若膠體二氧化 :=,則可減小上―,可抑制膠= 第1組成物中所使用之膠辨― 於第!組成物之質量,較佳為;:3〇質^添加量,係相對 量%。若膠體二氧化石夕之添加 ^ 〇、更佳10〜20質 具有充分研磨速度的化學機朽π/ 2貝1%,則無法得到 子械械研磨用水系分散體,而不實 97127579 200919568 用。另一方面,若膠體二氧化矽之添加量超過2〇重量%, 則於第1組成物中容易形成膠體二氧化矽之凝集體,而有 發生被研磨面之到痕等之表面缺陷的情形。 1. 2驗性化合物 第1組成物所使用之鹼性化合物,係用於將第丨組成物 之液性保持在弱鹼性(ΡΗ8〜10)的必要成分。 η ο 作為第1組成物所使用之鹼性化合物,可舉例如有機驗 或無機鹼。作為有機鹼,可舉例如四 ^等。作為無機驗,可舉例如氨、氣氧 $。此纽性化合物中’較佳為無機驗之氨或氫氧化卸, 特佳為氫氧化卸。 =i組成物所使用之驗性化合物之添加量,若添加用於 :第、,1組成物之液性保持為驗性(pH8〜⑴所需 可’亚無特別規定。 1. 3分散媒 =分散媒,可舉例如水、水及醇之混合媒體、含有水 /、水呈相溶性之有機溶媒的混合媒體 :圭:二用水或水及醇之混合媒體,特佳為使用 2組成物混合時PH不穩而有對研磨性 成阻礙的情形。若pH超過1 〇,則有使第 之腐辦_卜 j名使第1組成物所含有 夕體—軋化矽之從29si_NMR光 矽烷醇基數辦加乜就面積所鼻出的 數&加等膠體一乳化石夕變質的情形,而有無法發 97127579 12 200919568 揮原有機能的情形。 2.第2組成物 =實&形恶之第2組成物’係含有聚(甲基)丙烯酸 ::化合物。帛2組成物之液性係由將混合了…組成物 :二2、組成物之化學機械研磨用水系分散體之液性保持 為性的硯點而言’而調整為ΡΗ11〜13. 5之驗性。以下, 針對各成分進行詳細說明。Here, Να represents the Yafotian constant: 6 〇 22xi〇u. The above-mentioned colloidal dioxy-cutting alcohol base number is preferably ^; 23. 97127579 10 200919568 or more and 4. 〇χ 1 〇 23 / g or less, more preferably 36 乂 1 〇 23 3.8 X l Q 23 / g or less. In the case where the number of tearing cells from the signal area of the spectrum is within the above range, since the dioxotomy:::, the strength of the dioxo prior particles is increased, a sufficient speed f is obtained, and A moderate amount of the alcohol base number is stabilized by the action of the aqueous dispersion medium, and the dioxide particles are chemically dispersed in the chemical mechanical: ^ dispersion, which does not become a defect original during grinding; When the number of alcohol groups exceeds the above range, there is a case where the dioxogranules are deteriorated, and the defects such as sufficient polishing speed and scratches are not obtained, which is not preferable. When the number of bases is less than the above range, _I stanol is dispersed in water. Zhao (4):: Poor;: =: Mechanical grinding is caused by defects such as marks on the object to be polished, which is not preferable. The polishing is carried out and, as will be described later, in the first fine. It is known that the test compound and the thiol group which protrudes from the additive compound will cause the exchange of the glycerol of the surface of the saponin, and the interaction of the metamorphic bond of the colloidal oxidized silica will occur. Because of the surface defect of the grinding surface. If the colloid is oxidized :=, the upper ― can be reduced, and the gel can be suppressed. The gel used in the first composition is recognized as the first! The mass of the composition is preferably: 3 〇 ^ ^ addition amount, relative amount %. If the colloidal silica dioxide is added with ^, preferably 10 to 20, with a chemical speed of π/ 2 shells with a sufficient grinding rate of 1%, the water dispersion of the sub-mechanical polishing cannot be obtained, and the 97127579 200919568 is not used. . On the other hand, when the amount of the colloidal cerium oxide added exceeds 2% by weight, the aggregate of the colloidal cerium oxide is likely to be formed in the first composition, and the surface defects of the surface to be polished or the like may occur. . 1. 2 Assay compound The basic compound used in the first composition is an essential component for maintaining the liquidity of the second composition in a weakly basic (ΡΗ8 to 10). η ο The basic compound used as the first composition may, for example, be an organic test or an inorganic base. The organic base may, for example, be tetra. As the inorganic test, for example, ammonia or gas oxygen can be cited. Among the compounds, it is preferably inorganic or ammonia-decomposed, and particularly preferably hydrogen peroxide. The amount of the test compound used in the composition of the ii is added to the liquidity of the first and first compositions to be inspective (pH 8 to (1) is required to be 'special.' = Dispersing medium, for example, a mixed medium of water, water and alcohol, and a mixed medium containing water/water-compatible organic solvent: Gui: two water or a mixed medium of water and alcohol, particularly preferably a mixture of two components When the pH is unstable, there is a case where the polishing property is hindered. If the pH exceeds 1 〇, there is a case where the first composition is contained in the first composition, and the 29th_NMR photo stanol is contained in the first composition. The base number is added to the number of noses and the addition of colloids to the emulsified stone eve, but there is a situation in which the original organic energy cannot be sent. 2. The second composition = real & The second composition ' contains a poly(meth)acrylic acid:: compound. The liquid structure of the 帛2 composition is composed of a mixture of the composition: 2, and 2, the chemical mechanical polishing aqueous dispersion of the composition Keep it as a point of sexuality' and adjust it to ΡΗ11~13. 5 testability. Described in detail.

2·1聚(甲基)丙烯酸鹽 稭由於» 2組成物中添加聚(甲基)丙稀酸鹽,可得到較 大之製程範圍(即使大幅超過最佳研磨時間而進行化學機 =研磨被研磨面之表面狀態亦不惡化的水系分散體的性 能)的化學機械研磨用水系分散體。 作為聚(曱基)丙烯酸鹽所含有之對陽離子,可舉例如銨 離子、烷基銨離子、鉀離子、鈉離子等。此等之中,特佳 係使用聚(甲基)丙烯酸銨、聚(甲基)丙烯酸鉀。 I (甲基)丙烯酸鹽之重量平均分子量,係藉由凝膠滲透 層析法,以水作為展開溶媒而測定之聚乙二醇換算的值, 較佳為 500,000〜3,000,〇〇〇 , 更佳為 1’ 000, 000〜2, 000, 000。藉由設為此範圍之重量平均分子 里 了仔到更大之製程对圍的化學機械研磨用水系分散 體。若重量平均分子量未滿500,000,則例如對於PETE〇s 膜等之絕緣膜的研磨速度顯著降低,難以達成被研磨面之 平坦化。另一方面,若超過3, 000, 000,則雖然對於絕緣 膜之研磨速度充分,但由於分子量過大故於製造上難以進 97127579 13 200919568 行過濾、,而不實用。 聚(曱基)丙烯酸鹽之添加量係相對於第2組成物之質 量’較佳為0.1〜5質量%、更佳0.5〜3質量%。藉由設為此 範圍之含量,可得到較大製程範圍的化學機械研磨用 分散體。 例如,聚(甲基)丙烯酸鹽為聚(曱基)丙烯酸銨,其重量 平均分子量為1,000,000〜2,_,000之範圍内,添二量= Γ Ο 相對於第2組成物之重量為〇·5〜3質量%,藉此可得到能 夠確實達成較大製程範圍的化學機械研磨用水系分散體。 2. 2驗性化合物 * 第2組成物所使用之驗性化合物,係用於將第2址成物 之液性保持為鹼性(ρΗ11〜13.5)所必要的成分。 作為第2組成物所使用之驗性化合物,可舉例如與第工 組成物相同的有機鹼或無機鹼。作為有機鹼,可舉例如四 甲基氫氧化銨、三乙基胺等。作為無機驗,可舉例如氨、 氫氧化鉀、氫氧化納等。此等之驗性化合物中,較佳^ 機鹼之氨或氫氧化鉀,特佳為氫氧化鉀。 ……、 第2組成物所含之鹼性化合物,較佳係使用與第1組 物所含之鹼性化合物相同者。藉由使用相同之鹼性化入 =則在將第i組成物與第2組成物混合以調製化學機二 的^水系分散體時’可極力抑制膠體二氧化石夕之凝集體 第2組成物所使用之鹼性化合物之添加量,若 組成物之液性保持為鹼性⑽卜13 5)所需之量即可,並 97127579 200919568 無特別限定。 2. 3分散媒 作為分散媒,可舉例如水、水及醇之混合媒體、含有水 及與水呈相溶性之有機溶媒的混合媒體。此等之中,較佳 係使用水或水及醇之混合媒體,特佳為使用水。 2 · 4其他添加劑 第2組成物中,除了上述成分之外,可添加界面活性 劑、酸性化合物等。 2. 4. 1界面活性劑 作為界面活性劑’可使用陽離子性界面活性劑、陰離子 I*生界面活性劑、兩性界面活性劑、非離子性界面活性劑 等。此等之中,較佳可使用陰離子性界面活性劑或非離子 性界面活性劑,更佳可使用非離子性界面活性劑。 作為非離子性界面活性劑,可舉例如:聚乙二醇型界面 活性劑、乙炔二醇、乙炔二醇之環氧乙烷加成物、乙炔醇 等。此等之中,較佳為於分子内具有三鍵之化合物,可舉 例如乙炔二醇、乙炔二醇之環氧乙烷加成物、乙炔醇。 作為陰離子性界面活性劑,可舉例如羧酸鹽、磺酸趟、 硫酸酯鹽、磷酸醋鹽、含氟系界面活性劑等。作為羧酸=, 可舉例如脂肪酸皂、烷基醚羧酸鹽等。作為磺酸鹽,可舉 例如烷基苯磺酸鹽、烷基萘磺酸鹽、α—烯烴磺酸鹽等: 作為硫酸酯鹽,可舉例如高級醇硫酸酯鹽、烷基醚硫酸 鹽、聚氧乙稀炫基苯基趟硫酸鹽等。作為填酸鹽,可舉例 如烷基磷酸酯鹽等。作為含氟系界面活性劑,可舉例如全 97127579 200919568 氟烷基化合物等。此等陰離子性界面活性劑中,特佳為含 氣系界面活性劑。 此等界面活性劑可單獨使用1種或組合2種以上使用。 、界面活性劑之添加量係相對於第2組成物之質量,較佳 ,0.01〜5質量%、較佳0.05〜2質量%、特佳質量%。 若界面活丨生劑之添加量為上述範圍内,則可達到兼顧適當 之研磨速度與良好之被研磨面。 2 · 4. 2酸性化合物 作為酸性化合物,較佳係使用碳數4以上之有機酸。碳 數4以上之有機酸中’更佳為碳數4以上之脂肪族有機酸 及具有雜環之有機酸。 作為上述碳數4以上之脂肪族有機酸,較佳為碳數4以 上之脂肪族多元羧酸、碳數4以上之羥基酸等。作為上述 碳數4以上之脂肪族多元羧酸,可舉例如順丁烯二酸、琥 站酸、反丁烯二酸、戊二酸、己二酸等之2元有機酸。作 為上述碳數4以上之經基酸,可舉例如檸檬酸、蘋果酸、 酒石酸等。 作為上述具有雜環之有機酸,可舉例如喹啉羧酸、吡啶 羧酸、吡啶二羧酸、吡讲羧酸等。此等之中,更佳為喹啉 曱酸(例如2-喹啉甲酸)、喹啉酸(例 酸)、2元之有機酸(例如,順丁婦二酸、二:)= 酸(例如,蘋果酸、丙二酸),特佳為喹啉甲酸、喹啉酸。 上述酸性化合物之添加量係相對於第2組成物之質 量’較㈣0.0卜5質量%、更佳0.05〜2質量%。若為此範 97127579 16 200919568 =内之添加量,則可達成研磨速度與良好之被研磨面的均 妒、成物中’酸性化合物為選自喹啉羧酸、喹啉 二夂::之有機酸(其中,啥琳酸除 種,其添加量更佳為0.05~2#量%。因此⑽1 持研磨速度與良好被 更良好土也保 自喹啉羧酸、喹啉酸、順了 # — ”、、璉 果酸的至少!種,…Τ:,、丙二酸、檸檬酸及頻 ) / 1種其添加I特佳為0.05〜2質量%。因此, y更加良好地㈣研磨速度與良好被研磨 酸性化合物可單獨使们種或組合使用2種以上 42·1 poly(meth)acrylate straw Due to the addition of poly(methyl)propionate to the » 2 composition, a larger process range can be obtained (even if the chemical polishing machine is used to greatly exceed the optimum polishing time) A chemical mechanical polishing aqueous dispersion in which the surface of the polished surface does not deteriorate in the performance of the aqueous dispersion. The counter cation contained in the poly(fluorenyl) acrylate may, for example, be an ammonium ion, an alkylammonium ion, a potassium ion or a sodium ion. Among them, ammonium poly(meth)acrylate or potassium poly(meth)acrylate is particularly preferred. The weight average molecular weight of the I (meth) acrylate is a polyethylene glycol-equivalent value measured by gel permeation chromatography using water as a developing solvent, and is preferably 500,000 to 3,000. 〇〇, more preferably 1' 000, 000~2, 000, 000. By using a weight-averaged molecule in this range, a chemical mechanical polishing aqueous dispersion is prepared for a larger process. When the weight average molecular weight is less than 500,000, for example, the polishing rate of the insulating film such as the PETE〇s film is remarkably lowered, and it is difficult to achieve flattening of the surface to be polished. On the other hand, if it exceeds 3,000,000, although the polishing rate for the insulating film is sufficient, it is difficult to manufacture in the production of 97127579 13 200919568 because the molecular weight is too large, and it is not practical. The amount of the poly(fluorenyl) acrylate to be added is preferably 0.1 to 5% by mass, more preferably 0.5 to 3% by mass based on the mass of the second composition. By setting the content in this range, a dispersion for chemical mechanical polishing in a large process range can be obtained. For example, the poly(meth)acrylate is ammonium poly(indenyl)acrylate having a weight average molecular weight in the range of 1,000,000 to 2, _,000, and the addition amount = Γ Ο relative to the weight of the second composition In the case of 5·5 to 3 mass%, it is possible to obtain a chemical mechanical polishing aqueous dispersion which can surely achieve a large process range. 2. 2 Detective compound * The test compound used in the second composition is a component necessary for maintaining the liquidity of the second site to be alkaline (ρ Η 11 to 13.5). The test compound to be used as the second composition may, for example, be the same organic base or inorganic base as the work composition. The organic base may, for example, be tetramethylammonium hydroxide or triethylamine. As an inorganic test, ammonia, potassium hydroxide, sodium hydroxide, etc. are mentioned, for example. Among these test compounds, ammonia or potassium hydroxide is preferred, and potassium hydroxide is particularly preferred. The basic compound contained in the second composition is preferably the same as the basic compound contained in the first composition. By using the same alkalinization = when the ith composition and the second composition are mixed to prepare the aqueous dispersion of the chemical machine 2, the second composition of the colloidal silica dioxide condensate can be suppressed as much as possible. The amount of the basic compound to be used is not particularly limited as long as the liquidity of the composition is kept to be alkaline (10) and 13 5). 2. 3 Dispersing medium The dispersing medium may, for example, be a mixed medium of water, water and alcohol, or a mixed medium containing water and an organic solvent compatible with water. Among these, it is preferred to use water or a mixed medium of water and alcohol, and it is particularly preferable to use water. 2·4 Other Additives In the second composition, in addition to the above components, a surfactant, an acidic compound, or the like may be added. 2.4.1 Surfactant As a surfactant, a cationic surfactant, an anionic I* surfactant, an amphoteric surfactant, a nonionic surfactant, or the like can be used. Among these, an anionic surfactant or a nonionic surfactant is preferably used, and a nonionic surfactant is more preferably used. The nonionic surfactant may, for example, be a polyethylene glycol type surfactant, acetylene glycol, an ethylene oxide adduct of acetylene glycol or acetylene alcohol. Among these, a compound having a triple bond in the molecule is preferred, and examples thereof include an acetylene glycol, an ethylene oxide adduct of acetylene glycol, and an acetylene alcohol. The anionic surfactant may, for example, be a carboxylate, a sulfonium sulfonate, a sulfate salt, a phosphoric acid vinegar or a fluorine-containing surfactant. The carboxylic acid = may, for example, be a fatty acid soap or an alkyl ether carboxylate. Examples of the sulfonate include an alkylbenzenesulfonate, an alkylnaphthalenesulfonate, and an α-olefinsulfonate. Examples of the sulfate salt include a higher alcohol sulfate salt and an alkyl ether sulfate. Polyoxyethylene phenyl sulfonium sulfate and the like. As the acid salt, for example, an alkyl phosphate salt or the like can be exemplified. The fluorine-containing surfactant may, for example, be a total of 97127579 200919568 fluoroalkyl compound or the like. Among these anionic surfactants, a gas-containing surfactant is particularly preferred. These surfactants may be used alone or in combination of two or more. The amount of the surfactant to be added is preferably 0.01 to 5% by mass, preferably 0.05 to 2% by mass, particularly preferably % by mass based on the mass of the second composition. When the amount of the interface active agent added is within the above range, an appropriate polishing rate and a good surface to be polished can be achieved. 2 · 4. 2 Acid compound As the acidic compound, an organic acid having 4 or more carbon atoms is preferably used. Among the organic acids having 4 or more carbon atoms, 'the organic acid having a carbon number of 4 or more and the organic acid having a hetero ring are more preferable. The aliphatic organic acid having 4 or more carbon atoms is preferably an aliphatic polycarboxylic acid having 4 or more carbon atoms or a hydroxy acid having 4 or more carbon atoms. The aliphatic polybasic carboxylic acid having 4 or more carbon atoms may, for example, be a ternary organic acid such as maleic acid, succinic acid, fumaric acid, glutaric acid or adipic acid. Examples of the transbasic acid having a carbon number of 4 or more include citric acid, malic acid, tartaric acid and the like. The organic acid having a hetero ring may, for example, be quinolinecarboxylic acid, pyridinecarboxylic acid, pyridinedicarboxylic acid or pyridincarboxylic acid. Among these, more preferred are quinolinic acid (for example, 2-quinolinecarboxylic acid), quinolinic acid (for example, acid), and 2-valent organic acid (for example, cis-butanic acid, two:) = acid (for example). , malic acid, malonic acid), particularly preferably quinolinecarboxylic acid, quinolinic acid. The amount of the acidic compound added is more than (four) 0.0 5% by mass, and more preferably 0.05 to 2% by mass based on the mass of the second composition. If this is the addition amount of the standard 97127579 16 200919568, the polishing rate and the uniformity of the surface to be polished can be achieved. The acidic compound is selected from the group consisting of quinoline carboxylic acid and quinoline bismuth: Acid (in which 啥 酸 acid is added, the amount of addition is more preferably 0.05~2#%. Therefore, (10)1 holds the grinding speed and is better preserved from quinoline carboxylic acid, quinolinic acid, cis-# ", at least the kind of hazelnut acid, ... Τ:, malonic acid, citric acid and frequency) / 1 kind of addition I is particularly preferably 0.05 to 2% by mass. Therefore, y is more favorable (four) grinding speed and Goodly ground acidic compounds can be used alone or in combination of two or more types 4

2.5 pH 第2組成物之pH較佳為^以上且⑴以下 12以上且13.5以下,特佳為Μ以上且135以下 第2組成物之ρΗ未滿u,則有於混合第i組成物與第右2 組成物時發生中和反應’因此時所發生之中和熱而膠體二 乳化石夕呈不穩定並凝集的情形。若第2組成物之邱超 13.5,則有於混合第丨組成物與第2組成物時膠體二 石夕^不穩定並凝集的情形。任一情況下,若超過上 之範圍,則有於將第1組成物與第2組成物混合所得之化 學機械研磨用水系分散體中發生膠體二氧化矽之凝集體 的情形。此將成為引起被研磨面之刮痕等表面缺的 因,故不佳。 、 、J屌 3.其他添加劑 3.1氧化劑 97127579 17 200919568 於第1組成物或第2組成物中,可進一步添 例如,在被研磨面氧細 ,Λ 氧化g。 金屬,故銅膜不易進由於銅屬於富展性或延性的 表面氧化,形成二 此,可藉由氧化劑將銅膜 作 J又匕之氧化銅膜,而提升研磨速度。 ’、、、虱化劑’可舉例如過硫酸鹽、過氧化 ,過氧化物、多價金屬鹽等。作為過琉酸鹽,;二、 酸等。作為有機if 機酸’可舉例如石肖酸、硫 篦—A.....、虱化物’可舉例如過醋酸、過苯^酸、 氧化氫等。作為多價金屬鹽,可舉例如過猛酸 =、重鉻酸化合物等,具體而言,作 物 可舉例如過經酸卸等,作為重絡 口: 酸鉀等。 切j舉例如重鉻 為'過硫酸鹽及無機酸’特佳 Ο 貝里0更幺〇. 5〜5質量%。相對於第2 έ且赤铷 =佳為。質量%、更㈣均量%。=二 量’可達到研磨速度與良好被研均衡耗 於本實施形態之第〗組成物或第2組竭勤 ==另外準備含有氧化劑之第3組成物,而使 為化子機械研磨用水系分散體調製用 1組成物或第2組成物之成分,而使氧 劣化的情形。此時,若準備含有氧化劑之第3 其他套組,則可防止氧化劑機能的劣化。、 ’、、, 97127579 18 200919568 於使用過氧化氳作為氧 化氫之作為氧化劑 ,y、可含有具有促進過氧 千W之功能的機 機能之適當多價金屬離子 ㈣更加㈣研磨速度的 使其添加量為〇·〇1〜5 在,化為過氧化氫時’藉由 與良好被研磨面的均衡、。里 可更確實地達成研磨速度 3. 2防Ί虫劑 於第1組成物或第2組成 若將第1組成物之ρΗ控二,添加防峰亦即, 控制為1卜13.5,則可將使第’將第2組成物之邱 而成之化學機械研磨二,第2組成物混合 (ΡΗ8〜12)。心ώ 性保持在鹼性 Ρ 12)因此,由於可抑制被研 需於第1組成物或第^日+札士 刺蚀心生故不 等之防银劑。成物中添加苯并三峻或其衍生物 4.化學機械研磨用水系分散體之調製方法 f由^上述第!組成物及第2組成物與視需要之上述 弟、、且成物或純水’可調製化學機械研磨用水系分散體。 各組成物之混合量係以相對於^^ ^ ^ ^ ^ ^ ^ 彳日耵π猎此合所得之化學機械研 磨用水糸分散體之總質量,各組成物中所含 所需濃度的方式而決定。 风刀成為 具體而言’係以相對於藉混合所得之化學機械研磨用水 ^分散體之總質量,膠體二氧化矽之含量為0· 0卜10質量 %,聚(曱基)丙烯酸鹽之含量為〇.〇〇1〜2質量%,界面活性 劑之含量為〇· 001〜2質量%,酸性化合物之含量為〇. 〇1〜5 質量%,氧化劑之含量為〇〇〇5~5質量%之方式,決定上述 97127579 19 200919568 第1組成物、上述第2組成物、上述第3組成物、純水之 混合量即可。 5.化學機械研磨方法 5. 1化學機械研磨裝置 圖1表示化學機械研磨裝置之概略圖。如圖i所示,化 學機械研磨裝置100係自滎料供給喷嘴12供給化學機械 研磨用水系分散體(漿料丨6),且使貼附了研磨布18之旋 〇轉台別旋轉’並使保持了半導體基板1〇之頂環Μ抵接 而進行X,圖1中亦合併示有水供給喷嘴i 4及修整器 24 〇 ,環22之研磨負重可於 之範圍内選擇,較佳為3〇〜5〇〇gf/cm2(2. 94〜49kf^)。又, =轉σ 20及頂環22之旋轉數可於1Q〜4〇〇rpm之範圍内適 當選擇,較佳為30〜15〇rpm。自漿料供給喷嘴12所供給 之漿料16的流量,可於1(M,〇〇〇ml/分之範圍内選擇: I,較佳為5 0〜4 0 0 m 1 /分。 使用藉本發明之化學機械研磨用水系分散體調製用套 組所得之化學機械研磨用水系分散體實施被研磨 侧研磨時,可使用市售之化學機械研磨裝置,具體而 δ ,可使用荏原製作所股份有限公司製之型式 ΕΡ0-112」、「ΕΡΟ-222」,Lapmaster SFT 公司製之型二 「LGP-51G」、「LGP-552」,Applied Materials 公司製^ 型式「Mirra」等,依既定研磨條件進行研磨。 5.2化學機械研磨用水系分散體之調製方法 97127579 20 200919568 本發明之化學機械研磨用水系分散體調 ==其:第1組成物與第2組成物,並視需要= ^有虱化狀第3組成物,而可調製 -分散體。作為此種混合方法,可採用以下態樣系 .mm第1組成物及第2組成物,視需要再加入含 弋體二:卜3組成物,而先調製化學機械研磨用水系分 r二:化學機械研磨用水系分散體自漿料供刚 r 2依上述^罝供給至旋轉台2〇上。 '⑵可預先將第1組成物或第2組成物之任一者愈含有氧 化劑之第3組成物混人,蔣夂wΛ 3有乳 σ將各別的組成物分別自漿料供給 噴嘴12i、給錢轉台2G上,於旋轉台上混合該等。 縣第1組絲、第2組絲、含有氧化劑之第 、,、=個別地自聚料供給喷嘴12供給至旋轉台2。上, 亚於方疋轉台上混合其等。 '別:二所謂「將組成物預先混合」係指除了將組成物個 至旋轉台20上而於旋轉台20上一邊研磨、一、嘉 進行混合之方法以外的混人 邊 合、供给管線中、、9^ \ 可舉例如,調合槽内混 合。 口等。又’分散媒係事先與各組成物混 水至(3)之混合方法所調製之化學機械研磨用 夂系刀政體的pH,較佳為8~j2、 ^ 述範圍内,則可抑制金屬膜^ 。右PH為上 j金屬膑之腐蝕發生,並即使對於厶厲 膜、蔽障金屬膜及絕緣膜之任— 、、’屬 性能。 種膜亦可具有良好之研磨 97127579 200919568 5 · 3化學機械研磨方法 本發明之化學機械研磨用水系分散體調製用套組,可應 用於製造半導體裝置之廣範圍的化學機械研磨步驟,尤其 適合使用於以銅作為佈線材料之金屬鑲嵌佈線形成^ 驟。以銅作為佈線材料之金屬鎮嵌佈線形成步驟,係藉由 •在於$成為佈線之部分形成了溝的絕緣膜(包括溝部曰)上 形成蔽障金屬膜後,使佈線材料之銅堆積,並去除剩餘之 〇銅的步驟(第丨研磨處理步驟),及去除溝部以外之蔽障金 屬膜的步驟(第2研磨處理步驟)’再經由將絕緣膜部分進 行若干研磨的步驟(第3研磨處理步驟),而得到平坦之金 f镶嵌佈線。本發明之化學機械研磨用水系分散體調製用 套組亦可應用於上述第1至第3研磨處理步驟之任一步驟 尚且,上述 銅」係指純銅、銅與鋁、 〇 為包括銅含量為95質量%以上者的概念。 另外,上述「蔽障金屬膜」係指例如由鈕、 氮化鈦、氮化鶴等所構成者。 聽I鈦 6.實施例 6.1含膠體二氧化矽粒子之水系分散體的調製 (a) 3膠體二氧化石夕粒子C1之水分散體的調製 將漢度25質量%之氨水7〇質量份、離子交換水4〇質量 、刀乙知170質量份及四乙氧基料2() f量份填裝至燒 瓶中,以旋轉速度18〇 ' 遭攪拌、一邊升溫至8(TC。 將〉皿度維持於啊下持續授拌2小時後,冷卻至室溫。 97127579 22 200919568 藉此’得到膠體二氡化矽 轉蒸發器,重複數-大一邊蔣"分散體。其次’使用旋 t下並添加離子交換水邊—將^得散體溫度维持於 調製成含有2 ^ 去除醇的操作。藉此操作, 门衣风3有別負量%膠體二 此水系分散體t所含之踢體二t ^ 的水分散體。 次粒徑為25nm,平均二次粒; 石粒子C1的平均- - rn λν 1 y nm’平均會合度為 1. 6。 ΛΛγ粒子C2之水分散體的調製 農度25質量%之氨水65質量份、離子 曰 份、乙醇1 75皙昜/八《 卞乂換水40貝罝 .., A 刀及四乙氧基矽烷25質量份填f至焯 :中,以旋轉速度〜一邊授拌 里:=燒 將溫度維持於8(rc下持續授拌2小時德邊至8°c。 藉此,得到膠體二氧化石夕粒子之醇分散體。二至^溫。 =;r數次一邊將所得之二^π C下亚添加離子交換水、一 芦幵於80 調製成含有20質量=:雨作。藉此操作, ϋ 貝里/0膠體一乳化矽粒子C2的 “糸分散體中所含之膠體二氧化石夕粒子C2的月_ 絲徑為35nm,平均二次粒徑為7Gn 、^一 (c)膠體二氧化石々初 ^曰σ度為2. 〇。 測定方法料子之㈣—絲徑及平均二次粒徑之 、隹=·(ΤΕΜ)(日立製作所(股)製,型式「H-7500 佈二,平均二次粒徑係使用動態光散射式—」八 Γ置(堀場製作所(股)製,型式「_0」)進行i 97127579 23 200919568 尚且’將藉上述方法所得之膠體 特徵整合示於表1。 二氣化矽粒子 C1〜C2之 (表1) 膠體二氧化矽之種類 25質量%氨水使用量(質量份) 乙醇使用量(質量份) 四乙氧基矽烷使用量(質量份) 水系分散體中之含有量(質量%) -- 1 - 70 2. 平均一次粒徑(nm) 平均二次粒徑(nm) (a)含聚丙烯酸鹽pi之水溶液的調製 於填裝了離子交換水丨,_及5質量%過硫酸銨水溶液 〇.4g之内容積2公升的容器中,於回流下—邊攪拌、一 邊歷時10小時均等地滴下20質量%之丙婦酸水溶液 5〇〇^。滴下結束後,再於回流下保持2小時,藉此得到含 重量平均分子量(Mw)l,500, 0〇〇之聚丙烯酸鹽的水溶液。 於其中慢慢加入10質量%氫氧化鉀水溶液以進行中和,而 調製成10質量%之含有聚丙烯酸鹽P1 (重量平均分子量 (Mw)l,500,000之聚丙烯酸鉀)的pH7. 5之水溶液。 (b)含聚丙稀酸鹽P2之水溶液的調製 於填裝了離子交換水1,000g及5質量%過硫酸銨水溶液 97127579 24 200919568 〇.6g之内容積2公升的容器中,於回流下—邊授拌、— 邊歷時10小時均等地滴下20質量%之丙烯酸水溶液 5〇〇g。滴下結束後,再於回流下保持2小時,藉此得到含 重量平均分子量(Mw)l,300, 000之聚丙烯酸鹽的水溶液。 於其中慢慢加入10質量%氫氧化鉀水溶液以進行中和,而 δ周製成10質罝%之含有聚丙烯酸鹽P2(重量平均分子量 (Mw)l,300,000之聚丙烯酸鉀)的ρΗ7·5之水溶液。 (c) 含聚丙稀酸鹽Ρ3之水溶液的調製 〇 於填裝了離子交換水丨,00〇2及5質量%過硫酸銨水溶液 〇.8g之内容積2公升的容器中,於回流下一邊授摔、一 邊歷時10小時均等地滴下20質量%之丙烯酸水溶液 500g。滴下結束後,再於回流下保持2小時,藉此得到含 重量平均分子量(Mw)l,050, 〇〇〇之聚丙烯酸鹽的水溶液。 於其中慢慢加入25質量%氨水溶液以進行中和,而調製成 10質量%之含有聚丙烯酸鹽鹽P3(重量平均分子量 υ (Mw)l,050,000之聚丙烯酸銨)的pH7.5之水溶液。里 (d) 聚丙烯酸鹽之重量平均分子量之測定方法 重量平均分子量(聚乙二醇換算分子量)及分子量分 佈,係藉由凝膠滲透層析法(裝置名;Waters公司製「& -模組-1」’檢測器.Waters公司製「410型示差折射率計) 進行測定。管柱係使用Tohs〇股份有限公司製「/沉^ -Μ」,洗提液係使用NaC 1水溶液/乙腈混合液。 尚且,將藉上述方法所得之聚丙烯酸鹽P1〜P3之特徵整 97127579 25 200919568 (表2) 聚丙烯酸之種類 P1 P2 P3 過硫酸銨之使用量(g) 0. 02 0. 03 0. 04 中和劑之種類 KOH KOH NHs 重量平均分子量(Mw) 1,500, 000 1,300, 000 1,050, 000 6. 3化學機械研磨試驗 6. 3. 1研磨速度之評價 p 於化學機械研磨裝置(Appl ied Materials公司製,型 式「Mirra」)安裝多孔質聚胺基甲酸酯製研磨墊(Rodel Nitta公司製,型號「IC1000」),一邊供給既定之化學 機械研磨用水系分散體,一邊對下述各種研磨速度測定用 基板’依上述研磨條件進行研磨處理1分鐘,藉下述手法 鼻出研磨速度。 (a)研磨速度測定用基板 •於8吋附熱氧化膜之矽基板上設置了膜厚15, 〇〇〇埃 u之銅膜者。 •於8吋附熱氧化膜之矽基板上設置了膜厚2, 〇〇〇埃之 鈕膜者。 ' •於8吋附熱氧化膜之矽基板上設置了膜厚2, 〇〇()埃之 : 氮化鈕膜者。 '•於8吋附熱氧化膜之矽基板上設置了膜厚1〇, 〇〇()埃 之PETEOS膜者。 、 •於8吋附熱氧化膜之矽基板上設置了膜厚1〇, 〇〇〇埃 之低"電係數絕緣膜(Appiie(j Materials公司製,商品 97127579 26 200919568 名「Black Diamond」)者。 (b )研磨條件 •研磨頭旋轉數:8〇rpm •旋轉台旋轉數:85rpm •研磨頭負重:15〇gf/cm2 •化學機械研磨用水系分散體之供給速度:20〇1111/分 此時之化學機械研磨用水系分散體之供給速度,係指將 (、、’’心仏給液之供給量合計除以每單位時間的值。 6· 3· 2研磨速度之算出 針對銅膜、组膜及氮化鈕膜,使用電傳導式膜厚測定器 (KUlencor(股)製,型式「〇MNIMApRS75」),測定研磨 处,里後之膜厚,由因化學機械研磨所減少之膜厚及研磨時 間鼻出研磨速度。 *針對PETEQS膜、及低介電係數絕緣膜,使用光繞射式 ,厚測定器(Nanometrics japan(股)製,型式 Nan〇spec6100」),測定研磨處理後之膜厚,由因化學 機械研磨所減少之膜厚及研磨時間算出研磨速度。 6· 3· 3刮痕之評價 使用光學顯微鏡,於暗視野下,隨機觀察2〇〇處範圍 • 12〇#mxl20#m之單位區域,測定發生有刮痕之單位區域 之數I作為刮痕數。以下實施例中,於此數值附加「個/200 區域」之單位。 6· 3. 4腐蝕之評價 針對lcm X lcm之銅的區域,使用缺陷檢查裝置 97127579 27 200919568 (KLA-Tencor(股)製,型式「2351」)評價 1〇nm2〜1〇〇nm2 之尺寸的缺陷數。於表7中,〇表示腐蝕數為〇〜1〇個之 最佳狀態。△表示Π個〜1〇〇個之稍佳狀態。X表示存在 101個以上腐#之狀態,判斷為研磨性能不良。 6. 3. 5平均二次粒徑之評價 水系分散體中之膠體二氧化矽之平均二次粒徑係採用 雷射散亂繞射型測定裝置(大塚電子股份有限公司製,形 式「LPA610」而測定。 乂 6. 3. 6膠體二氧化矽中之矽烷醇基的定量▼… 將第1組成物所含之膠體二氧化矽以真空乾燥機進行 乾燥2天。將經乾燥之膠體二氧切以研硃充分粉碎 經粉碎之膠體二氧化石夕以固體測定用核磁共振分光計 ^Bruker公司製,形式「AVANCE3()〇」)藉dd_mas法進行2.5 pH The pH of the second composition is preferably ^ or more and (1) is 12 or less and 13.5 or less, and particularly preferably Μ or more and 135 or less of the second composition is less than u, and the ith composition and the first component are mixed. In the case of the right composition, a neutralization reaction occurs. Therefore, the occurrence of heat and colloidal emulsification are unstable and agglomerate. When the second composition is more than 13.5, the colloidal composition is unstable and aggregated when the second composition and the second composition are mixed. In any case, if it exceeds the above range, agglomerates of colloidal cerium oxide may be formed in the chemical mechanical polishing aqueous dispersion obtained by mixing the first composition and the second composition. This is a cause of surface defects such as scratches on the surface to be polished, which is not preferable. , J, 3. Other additives 3.1 Oxidizing agent 97127579 17 200919568 In the first composition or the second composition, for example, oxygen may be added to the surface to be polished, and g is oxidized. Metal, so the copper film is not easy to enter due to the surface oxidation of copper which is rich or ductile, and the copper film can be made into a copper oxide film by an oxidizing agent to increase the polishing speed. The ',, and the oxime agent' may, for example, be persulfate, peroxidation, peroxide, or a polyvalent metal salt. As a perrhenate, a second, an acid, and the like. Examples of the organic if-acid include, for example, tartaric acid, sulfonium-A.., and hydrazine, and examples thereof include peracetic acid, perbenzoic acid, and hydrogen peroxide. The polyvalent metal salt may, for example, be a perchloric acid compound or a dichromic acid compound. Specifically, the substrate may be, for example, subjected to acid detachment or the like, and may be referred to as a potassium hydride or the like. For example, heavy chrome is 'persulfate and inorganic acid'. Ο Ο 里 里 0 0 0. Relative to the second έ and 赤铷 = good. % by mass, more (four) average amount. = two quantities 'can achieve the polishing rate and the well-balanced consumption of the composition of the present embodiment or the second group of exhaustive == separately prepare the third composition containing the oxidant, and the chemical mechanical polishing water system The dispersion is prepared by modulating the composition of the first composition or the second composition to deteriorate oxygen. At this time, if the third other set including the oxidizing agent is prepared, deterioration of the oxidizing agent function can be prevented. , ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The amount is 〇·〇1 to 5, and when it is converted to hydrogen peroxide, it is balanced by a well-polished surface. In the first composition or the second composition, the first composition or the second composition can be more reliably controlled, and the peak of the first composition is controlled, and the peak is added, that is, the control is 1 to 13.5. The chemical mechanical polishing of the second composition was carried out, and the second composition was mixed (ΡΗ8 to 12). The palpitations remain alkaline Ρ 12) Therefore, it is possible to suppress the anti-silver agent which is required to be inferior to the first composition or the day + the eclipse. Adding benzotrisamine or its derivative to the product 4. Preparation method of chemical mechanical polishing aqueous dispersion f by ^ above! The composition and the second composition may be prepared as a chemical mechanical polishing aqueous dispersion with the above-mentioned younger brothers, and the resultant or pure water. The compounding amount of each composition is in the form of a desired concentration in each composition, which is obtained by comparing the total mass of the chemical mechanical polishing water hydrazine dispersion obtained by the combination with the ^^^^^^^^ Decide. The air knife is specifically referred to as the total mass of the chemical mechanical polishing water dispersion obtained by the mixing, and the content of the colloidal cerium oxide is 0. 0 b 10% by mass, and the content of poly(fluorenyl) acrylate The content of the surfactant is 〇·001~2 mass%, the content of the acidic compound is 〇. 〇1~5 mass%, and the oxidant content is 〇〇〇5~5 mass. In the case of %, the mixing amount of the above-mentioned 97127579 19 200919568 first composition, the above second composition, the above-mentioned third composition, and pure water may be determined. 5. Chemical mechanical polishing method 5. Chemical mechanical polishing device Fig. 1 shows a schematic view of a chemical mechanical polishing device. As shown in Fig. 1, the chemical mechanical polishing apparatus 100 supplies a chemical mechanical polishing aqueous dispersion (slurry crucible 6) from the feed supply nozzle 12, and rotates the rotary rotary table to which the polishing cloth 18 is attached. The top ring of the semiconductor substrate 1 is held in contact with the X to be abutted, and the water supply nozzle i 4 and the trimmer 24 合并 are also shown in FIG. 1 , and the grinding load of the ring 22 can be selected within the range, preferably 3 〇~5〇〇gf/cm2(2. 94~49kf^). Further, the number of rotations of the = σ 20 and the top ring 22 can be appropriately selected within the range of 1Q to 4 rpm, preferably 30 to 15 rpm. The flow rate of the slurry 16 supplied from the slurry supply nozzle 12 can be selected within a range of 1 (M, 〇〇〇ml/min: I, preferably 5 0 to 4 0 0 m 1 /min. When the chemical mechanical polishing aqueous dispersion obtained by the chemical mechanical polishing aqueous dispersion preparation kit of the present invention is subjected to polishing by the polishing side, a commercially available chemical mechanical polishing apparatus can be used. Specifically, δ can be used. The company's type ΕΡ0-112", "ΕΡΟ-222", Lapmaster SFT's model 2 "LGP-51G", "LGP-552", Applied Materials' "Mirra", etc., according to the specified grinding conditions 5.2. Preparation of chemical mechanical polishing aqueous dispersion 97127579 20 200919568 The chemical mechanical polishing aqueous dispersion of the present invention is adjusted == it: the first composition and the second composition, and if necessary, ^ The third composition may be a preparation-dispersion. As such a mixing method, the following first embodiment and the second composition may be used, and if necessary, a steroid-containing composition: First to modulate chemical mechanical polishing Fraction r 2: The chemical mechanical polishing aqueous dispersion is supplied from the slurry to the rotary table 2 from the slurry, and the second composition can be used in advance. The third component containing the oxidizing agent is mixed, and the composition of each of the components is supplied from the slurry supply nozzle 12i and the money transfer table 2G, respectively, and the mixture is mixed on the rotary table. The second group of filaments and the oxidant containing the first, the oxidizing agent are supplied to the rotating table 2 from the aggregate supply nozzle 12, and are mixed with the yoke on the turntable. "Mixed" means blending, mixing, and mixing in addition to the method of grinding the composition on the turntable 20, and mixing it on the turntable 20, for example, blending In the tank, the pH of the chemical system polishing slash system is preferably 8~j2, which is prepared by the mixing method of mixing the medium with the respective components to (3). Inside, the metal film can be suppressed. The right PH is the corrosion of the upper j metal crucible, and even for the Any of the film, the barrier metal film, and the insulating film, and the 'attribute energy. The seed film may also have a good polishing. 97127579 200919568 5 · 3 chemical mechanical polishing method The chemical mechanical polishing water dispersion preparation kit of the present invention, It can be applied to a wide range of chemical mechanical polishing steps for fabricating semiconductor devices, and is particularly suitable for use in forming metal damascene wiring using copper as a wiring material. The metal-intercalation wiring forming step using copper as a wiring material is based on $ is a step of forming a barrier metal film on the insulating film (including the trench portion) in which the trench is formed, and then depositing copper of the wiring material, removing the remaining beryllium copper (the second polishing process step), and removing the trench portion The step of the barrier metal film other than the barrier (second polishing treatment step)' is further performed by a step of polishing the insulating film portion (third polishing step) to obtain a flat gold f-inserted wiring. The chemical mechanical polishing aqueous dispersion preparation kit of the present invention may be applied to any of the first to third polishing treatment steps, wherein the copper refers to pure copper, copper and aluminum, and the cerium includes copper content. The concept of 95% or more. Further, the above-mentioned "barrier metal film" means, for example, a button, titanium nitride, or a nitrided crane. Listening to I Titanium 6. Example 6.1 Preparation of aqueous dispersion containing colloidal cerium oxide particles (a) Preparation of aqueous dispersion of colloidal silica dioxide cation particle C1 Ammonium water of 25% by mass of Hancheng 7 〇 mass parts, Ion exchange water 4 〇 mass, 170% by weight of the knife and 4 parts of the tetraethoxy material were filled into the flask, and the temperature was raised to 8 (TC) while stirring at a rotation speed of 18 〇. The temperature is maintained at ah and the mixture is allowed to mix for 2 hours, then cooled to room temperature. 97127579 22 200919568 By this, 'to get the colloidal bismuth oxime to the evaporator, repeat the number - the big side of the Chiang " dispersion. Secondly, use the spin t And adding the ion exchange water edge - maintaining the temperature of the dispersion to a temperature of 2 ^ to remove the alcohol. By this operation, the door wind 3 has a different amount of colloid 2 the body of the water dispersion t 2 t ^ of aqueous dispersion. The secondary particle size is 25 nm, the average secondary particle; the average particle size of the stone particle C1 - - rn λν 1 y nm 'the average degree of convergence is 1.6. The modulation of the water dispersion of the ΛΛγ particle C2 65 parts by mass of ammonia water 65 parts by mass, ion hydrazine, ethanol 1 75 皙昜 / eight " 卞乂 change water 40 罝. ., A knife and tetraethoxy decane 25 parts by mass, fill in f to 焯: medium, rotate at a speed of ~ to the side of the mixing: = burn to maintain the temperature at 8 (continued for 2 hours at rc to 8 °c) Thereby, an alcohol dispersion of colloidal silica dioxide granules is obtained. Two to ^When. =; r is added several times while adding the obtained π π C sub-addition of ion-exchanged water, a reed at 80 to prepare 20 Quality =: rain. By this operation, the 月Berry/0 colloid-emulsified cerium particle C2 "the 二 dispersion contained in the colloidal silica dioxide celite particle C2 has a monthly diameter of 35 nm, and the average secondary particle diameter 7Gn, ^1 (c) colloidal silica dioxide 曰 initial 曰 σ degree is 2. 测定. Determination method of the material (four) - wire diameter and average secondary particle size, 隹 = · (ΤΕΜ) (Hitachi Manufacturing Co., Ltd. ), the type "H-7500 cloth 2, the average secondary particle size is a dynamic light scattering type -" Gossip (Hiroshima Co., Ltd., type "_0") for i 97127579 23 200919568 The colloidal characteristics obtained by the method are shown in Table 1. The two gasified cerium particles C1 to C2 (Table 1) The type of colloidal cerium oxide 25 mass% ammonia water usage Parts by mass) Ethyl alcohol used (parts by mass) Tetraethoxy decane used (parts by mass) Content in aqueous dispersion (% by mass) - 1 - 70 2. Average primary particle size (nm) Average secondary particles Diameter (nm) (a) An aqueous solution containing polyacrylate pi is prepared by filling an ion-exchanged water crucible, _ and a 5 mass% aqueous solution of ammonium persulfate, 4 g of an internal volume of 2 liters of the container, under reflux - While stirring, a 20% by mass aqueous solution of bupropion acid (5 〇〇^) was uniformly dropped over 10 hours. After completion of the dropwise addition, the mixture was further kept under reflux for 2 hours to obtain an aqueous solution of a polyacrylate having a weight average molecular weight (Mw) of 1,500,0 Å. The aqueous solution of pH 7.5 containing polyacrylate P1 (weight average molecular weight (Mw) 1,500,000 potassium polyacrylate) was prepared by adding a 10% by mass aqueous solution of potassium hydroxide to be neutralized. . (b) An aqueous solution containing polyacrylic acid salt P2 is prepared by charging an aqueous solution of ion-exchanged water of 1,000 g and a 5% by mass aqueous ammonium persulfate solution 97127579 24 200919568 〇.6g in a container of 2 liters under reflux. While mixing, - 10 〇〇g of 20% by mass aqueous acrylic acid solution was uniformly dropped for 10 hours. After completion of the dropwise addition, the mixture was further kept under reflux for 2 hours, whereby an aqueous solution of a polyacrylate having a weight average molecular weight (Mw) of 1,300,000 was obtained. A 10% by mass aqueous potassium hydroxide solution was slowly added thereto for neutralization, and δ 周% of a polyacrylate P2 (weight average molecular weight (Mw) of 1,300,000 potassium polyacrylate) was prepared at δ 周%. Aqueous solution. (c) The preparation of the aqueous solution containing polyacrylic acid hydride 3 is prepared by filling an ion exchanged water crucible, 00 〇 2 and 5 mass % ammonium persulfate aqueous solution 〇 8 g of an internal volume of 2 liters of the container under reflux. On the other hand, 500 g of a 20% by mass aqueous acrylic acid solution was dropped evenly over 10 hours. After completion of the dropwise addition, the mixture was further kept under reflux for 2 hours, whereby an aqueous solution containing a polyacrylate having a weight average molecular weight (Mw) of 1,050 and hydrazine was obtained. A 25% by mass aqueous ammonia solution was gradually added thereto for neutralization, and an aqueous solution of pH 7.5 containing 10% by mass of polyacrylate salt P3 (weight average molecular weight υ (Mw) 1, 050,000 ammonium polyacrylate) was prepared. . (d) Method for determination of weight average molecular weight of polyacrylates Weight average molecular weight (molecular weight in terms of polyethylene glycol) and molecular weight distribution by gel permeation chromatography (device name; Waters Corporation & The group-1"' detector was used to measure the "410 type differential refractometer" manufactured by Waters Co., Ltd. The column was made of "/Sink-Μ" manufactured by Tohs Co., Ltd., and the eluent was NaC 1 aqueous solution / acetonitrile. Mixture. Further, the characteristics of the polyacrylates P1 to P3 obtained by the above method are all 97127579 25 200919568 (Table 2) The type of polyacrylic acid P1 P2 P3 The amount of ammonium persulfate (g) 0. 02 0. 03 0. 04 Type of agent KOH KOH NHs Weight average molecular weight (Mw) 1,500, 000 1,300, 000 1,050, 000 6. 3 Chemical mechanical polishing test 6. 3. 1 Evaluation of grinding speed p Chemical mechanical polishing device (Mirra, manufactured by Appl ied Materials Co., Ltd.), a porous polyurethane polishing pad (model "IC1000" manufactured by Rodel Nitta Co., Ltd.) is supplied, and a predetermined chemical mechanical polishing aqueous dispersion is supplied. Each of the following polishing rate measuring substrates "grinding was performed for 1 minute under the above-described polishing conditions, and the polishing rate was nose-dried by the following method. (a) Substrate for polishing rate measurement • A copper film having a film thickness of 15 Å is placed on a substrate of 8 吋 with a thermal oxide film. • On the 矽 substrate with 8 吋 thermal oxide film, the film thickness of 2, 〇〇〇 之 button film is set. ' • On the 矽 substrate of the 8 吋 thermal oxide film, the film thickness is set to 2, 〇〇 () 埃 : : nitride button film. '• On the 矽 substrate of the 8 吋 thermal oxide film, a PETEOS film with a film thickness of 1 〇, 〇〇 () Å is provided. • On the 矽 substrate with 8 吋 thermal oxide film, a film thickness of 1 〇, 〇〇〇 之 low "electric coefficient insulating film (Appiie (j Materials, product 97127579 26 200919568 "Black Diamond") (b) Grinding conditions • Grinding head rotation number: 8 rpm • Rotating table rotation number: 85 rpm • Grinding head weight: 15 〇 gf/cm 2 • Chemical mechanical polishing water dispersion supply speed: 20 〇 1111/min In this case, the supply rate of the chemical mechanical polishing aqueous dispersion refers to the total amount of supply of (,, ''cardiac feed solution divided by the value per unit time. 6·3· 2 Calculation of polishing rate for copper film The film and the nitride film were measured using an electrically conductive film thickness measuring device (manufactured by KUlencor Co., Ltd., type "〇MNIMApRS75"), and the film thickness was measured, and the film thickness was reduced by chemical mechanical polishing. Thickness and grinding time, nose grinding speed. * For PETEQS film and low dielectric constant insulating film, use light diffraction type, thick measuring device (Nanometrics japan, type Nan〇spec6100), after grinding treatment Film thickness The film thickness and the polishing time reduced by the mechanical polishing were calculated. 6·3· 3 Evaluation of the scratches Using an optical microscope, in a dark field, randomly observe the range of 2〇〇•12〇#mxl20#m unit area, The number I of the scratch-prone unit area was measured as the number of scratches. In the following examples, the unit of "unit/200 area" was added to this value. 6· 3. 4 Evaluation of corrosion for the area of copper of lcm X lcm Using the defect inspection device 97127579 27 200919568 (KLA-Tencor, model "2351"), the number of defects of 1 〇 nm 2 to 1 〇〇 nm 2 was evaluated. In Table 7, 〇 indicates that the number of corrosion is 〇 〜 1 The best state of 〇 is △ indicates a slightly better state of 〜1~1〇〇. X indicates that there are more than 101 rot #, and it is judged that the polishing performance is poor. 6. 3. 5 Evaluation of average secondary particle diameter The average secondary particle diameter of the colloidal cerium oxide in the aqueous dispersion was measured by a laser scattering type measuring device (manufactured by Otsuka Electronics Co., Ltd., the form "LPA610". 乂 6. 3. 6 colloidal oxidation Quantification of stanol groups in 矽 ▼... The first composition The colloidal cerium oxide contained was dried in a vacuum dryer for 2 days. The dried colloidal dioxotomy was used to fully pulverize the pulverized colloidal silica dioxide in the form of a solid-state nuclear magnetic resonance spectrometer, manufactured by Bruker. The form "AVANCE3()〇" is performed by the dd_mas method.

Si臓光譜敎,並使用峰值分離軟體心出進行The Si臓 spectrum is 敎 and is performed using the peak separation software core

:刀政纟取Q卜Q2、q3、Q4狀態之矽之信號面積,根 據上述一般式(1)算出矽烷醇基數。 6. 4實施例1及比較例1 6 · 4 · 1實施例1 (a)第1組成物之調製 將上述「6. 1(a)含膠體-签 _ ,, 體—乳化矽粒子Cl之水分散體夕 5周製」所調製的含膠體-氧 之 以拖管虱化矽粒子Cl之水系分散體, 以換异為無機粒子為相 艰 德,灭士友产 田於16· 〇質量%的量予以加入 後"】、、加虱氧化鉀將pH詷敕% 。 入 分之人叫_ θ a °整為8. 8。接著,以總構成忐 刀之合计量成為1〇〇質量% 再战成 的方式加入離子交換水後,Μ 97127579 28 200919568 孔從1 # m之過濾、器進行過滤,得到水系分散體(a )。又, 第1組成物(A)中之膠體二氧化矽C1係均勻分散’其平均 —次粒徑為45run。 (b)第2組成物之調製 將相當於1.2質量%之量的喹啉酸及相當於12質量% 之檸檬酸溶解於離子交換水,再添加相當於〇6質量%之 乙炔二醇型非離子系界面活性劑「%忖郯〇1465」(A卜 (Products japan公司製),其後,將上述「6.2(b)含聚丙 烯酸鹽P2之水溶液的調製」所調製之含聚丙烯酸鹽的 水溶液,以換算為聚合物重量為相當於2, 4質量%的量予 、J力if #· 1 5刀|里後,添加氣氧化卸將邱調整為a $。 編之合計量成為100質量%的方式加入 乂'7後,錯孔徑0.45/zm之過濾器進行減 水溶液(B)。針對實施例〗 愿仵到 成物,整合示於表3。使用之弟1組成物及第2組 U 使用剛調製完後之水系分散體⑷及剛調 /谷液(β)所調製的化學機械研磨用水+八a 評價 π保用水系分散體的研磨性能 將剛調製完後之水系分 與純水,依重量比_ 完後之水溶液⑻ %質败過氧化氫水(第3組其後,將 相當於質量%的量進行添 制氧化氫為 水系分散體(Α+Β)。此化學 D衣成化子機械研磨用 + Dii & 〇 予機械研磨用水系分散 之PH為8.9。使用此化學:體U+B) π磨用水系分散體(Α+β), 97127579 29 200919568 根據上述「6. 3化學機械研磨試驗」所記載之試驗方法, 進行各種試驗。將其結果示於表4。 =使用調製完經半年後之水系分散體(A)及調製完經半 年,之水溶液⑻所調製之化學機械研磨用水系分散 研磨性能評價 ::糸分散體⑷及水溶液⑻置入密閉容器中,將其於 溫槽内靜置保存半年。半年靜置保存後之水系分散 粒=膠體:氧切粒子C1係均勾分散,其平均二次 為^⑽。又’靜置保存半年後之水系分散體(A)之pH 125另一方面’靜置保存半年後之水溶液⑻之pH為 使用此靜置保存半年後之水系分散 :後之水溶液⑻,與使用上述「…⑹使== 用水體(A)及水溶液⑻所調製的化學機械研磨 系刀散體的研磨性能評價」同樣地進行各種試驗。將 具、乡α果示於表4。 與知使用靜置保存半年後之水系分散體⑷ 欠置保存+年後之水溶液⑻所調製的化學機械研磨用 剛:二散體’具有與使用剛調製完後之水系分散體(Α)及 :體^後之水溶液⑻所調製的化學機械研磨用水系分 放體同等的研磨性能。 τ刀 6. 4. 2比較例1 ⑻與純水’以重量比2:1: 3之比例進行混合,調製化 97127579 30 200919568 學機械研磨用水系分播m,Λ, n、 , / 刀散體(a+b)。將此化學機械研磨用水 系分,體⑽)置入密閉容器♦,將其於饥恒溫槽内靜 f保存半年。广年靜置保存後之化學機械研磨用水系分散: The signal area of the state of Q Bu Q2, q3, and Q4 is obtained by Knife, and the number of stanol groups is calculated according to the above general formula (1). 6. 4 Example 1 and Comparative Example 1 6 · 4 · 1 Example 1 (a) Modification of the first composition The above "6.1 (a) contains colloid-label, body-emulsified cerium particles Cl The aqueous dispersion containing the colloid-oxygen is prepared by dragging the aqueous dispersion of the bismuth bismuth particles Cl, and the inorganic particles are replaced by the granules of the granules. The amount of % is added after "], and the potassium oxide is added to pH 詷敕%. The person who is assigned is called _ θ a ° and the whole is 8. 8 . Then, after the ion exchange water was added in such a manner that the total composition of the total boring tool became 1 〇〇 mass%, the Μ 97127579 28 200919568 hole was filtered from the filter of 1 # m to obtain an aqueous dispersion (a). . Further, the colloidal ceria C1 in the first composition (A) was uniformly dispersed, and its average primary particle diameter was 45 run. (b) Preparation of the second composition: quinolinic acid equivalent to 1.2% by mass and citric acid equivalent to 12% by mass are dissolved in ion-exchanged water, and acetylene glycol type equivalent to 〇6 mass% is added. Ionic surfactant "% 忖郯〇 1465" (A product (manufactured by Products japan), and then polyacrylate-containing preparation prepared by the above-mentioned "6.2 (b) Preparation of aqueous solution containing polyacrylate P2" The amount of the aqueous solution is equivalent to 2, 4% by mass in terms of the weight of the polymer, and J force if #·1 5 knives| After the addition, the gas oxidizing and unloading is adjusted to a $. The combined measurement becomes 100 mass. After adding 乂'7 in % mode, the filter with the wrong pore size of 0.45/zm is used to reduce the aqueous solution (B). For the example, the product is expected to be integrated, and the integration is shown in Table 3. The composition of the brother 1 and the second group are used. U The chemical mechanical polishing water prepared by using the water dispersion (4) and the just-adjusted/gluten solution (β) immediately after the preparation is adjusted. The evaluation performance of the π water-repellent dispersion is as follows. Water, according to the weight ratio _ after the completion of the aqueous solution (8)% of the quality of hydrogen peroxide water (Group 3 thereafter, will When the amount of mass % is added, hydrogen peroxide is added as an aqueous dispersion (Α+Β). This chemical D is used for mechanical polishing of the machine + Dii & : Body U+B) π-milling aqueous dispersion (Α+β), 97127579 29 200919568 Various tests were carried out according to the test methods described in the above “6.3 Chemical Mechanical Polishing Test”. The results are shown in Table 4. = Evaluation of dispersive grinding performance of chemical mechanical polishing water prepared by dissolving the aqueous dispersion (A) after half a year of preparation and the aqueous solution (8) prepared for half a year: 糸 dispersion (4) and aqueous solution (8) are placed in a closed container, It is stored in a warm bath for half a year. The water-dispersed particles after standing for half a year are saved. Colloid: The oxygen-cut particles C1 are uniformly dispersed, and the average is twice (10). The pH of the body (A) 125 on the other hand 'the pH of the aqueous solution (8) after standing for half a year is the water dispersion after the use of the static storage for half a year: the latter aqueous solution (8), and using the above "...(6) to make == water body ( A) and the chemistry prepared by the aqueous solution (8) Various evaluations were carried out in the same manner as in the evaluation of the polishing performance of the machine-grinding blade. The water-based dispersion (4) after storage for six months was used to store the aqueous solution (8) after storage for + year. The chemical mechanical polishing used in the preparation of the chemical mechanical polishing has the same polishing performance as that of the chemical mechanical polishing aqueous dispersion prepared by using the aqueous dispersion (Α) immediately after the preparation and the aqueous solution (8) after the preparation. Knife 6.4.2 Comparative Example 1 (8) and pure water 'mixed at a weight ratio of 2:1:3, modulating 97127579 30 200919568 Mechanical mechanical grinding water system is divided into m, Λ, n, , / knife loose body ( a+b). The chemical mechanical polishing water is used, and the body (10) is placed in a closed container ♦, and stored in a hunger thermostat for half a year. Dispersion of chemical mechanical grinding water after continuous storage in the years

體(A+B)係確認到勝㈣I J膠體一氧化矽粒子Cl之沉澱,分離為二 層。測定膠體二氧化石# τ & 馬一 夕沐子Cl之平均二次粒徑後,結果 马約1 bOnm。又,靜罟仅六企知从 置保存丰年後之化學機械研磨用水系 分散體(A+B)之pH為& 6。The body (A+B) confirms the precipitation of the (4) I J colloidal cerium oxide particles Cl and separates into two layers. Determination of colloidal dioxide # τ & Ma Yi Xi Muzi average particle size of the Cl, the results of Ma about 1 bOnm. In addition, only six of them are aware that the pH of the chemical mechanical polishing aqueous dispersion (A+B) after storage of the harvest is &

C 使用此靜置保存半年後之化學機械研磨用水系分散體 jA+B),與使用上述「6·4. 1(c)使用剛調製完後之水系分 散體(A)及水溶液⑻所調製的化學機械研磨用水系 體的研磨性能評價」同樣地進行各種試驗。將其結果示於 表4。 /由其結果D靜置歸半钱域學機械研磨用水 系分散體(A+B),係相較於使用靜置保存半年後之水系分 散體(A)與靜置保存半年後之水溶液⑻所調製的化學: I)械研磨用水系分散體,刮痕數明顯增加。此係由於靜置保 存半年後而化學機械研磨用水系分散體(A+B)所含之膠體 二氧化矽C1形成凝集體所致。 夕 97127579 31 200919568 (CO5 比較例7 質量% CD cd 氫氧化鉀 〇〇 〇〇 (N1 OJ OJ 1—Η CO o* LQ CO ezi ytmc ι—Η 擰檬酸 t##酸 乙炔二醇型 非離子系 過氧化氫 比幸交例6 質量% Ο cd 1 LO 卜· -J cm' 氬氧化钟 eva τ—Η 1—Η CD <=ί LO cd OJ CZ5 種類 r—Η 〇〇 CU 擰檬酸 t##酸 m S·喊 I!屮 j4/ 4B1. ^ m tO毋 過氧化氫 比車交例5 質量% 1—^ C3 cd 氫氧化鉀 CNI 〇〇 〇〇 氬氧化鉀 (ΝΪ r-H CN1 1—Η CO CZ> to CV3 CZ5 種類 1 * 擰檬酸 酸 si 1& ^ >1 tf jir κ3毋 過氧化氫 比較例4 質量% 〇 〇> cd 氫氧化鉀 1 LO cd 寸 oi 氫氧化舒 Cvl (N3 t CO CZ5 LO 卜· (N1 CD vane .tfhit ^Η (N1 CU 檸檬酸 酸 ' 1 ji, Mi 袋雜 ό ^ 過氧化氫 實施例3 質量% Ο LO 氫氧彳_ 1 ° Ο CO 氫氧化鉀 oi Cvl 1—H ς〇 C=5 CO c^i CO 〇 種類 OJ ε 丙二酸 順丁烯二si M屮 >d/ 4lkL m t0 過氧化氫 實施例2 質量% 〇 CZ5 CO 氫氧化鉀 1 LO 〇〇* 0〇 氫氧化鉀 1—Η cxi esi ,.* o o cd i—H LO <〇 種類 a: 順丁烯二^ 剧 ig·碟 Ί ff tO毋 過氧化氫 實施例1 質量% cd 氫氧化鉀 1 〇〇 〇〇 CQ 氩#Ubif CM i—Η CM T_ ( CO ο ΙΛ oi τ1· "H CM cz> vane .lfr.il 檸檬酸 :酸 m il屮 Mi 誤凝 o ^ 過氧化氫 組成物名 雜二氧姆 驗f生化合物 其他添加劑 組成物名 聚甲基丙烯酸鹽 紛生化料勿 酸性化知勿 界面活性劑 氧化劑 滅 τ-· 03 城CO域噠#C. The chemical mechanical polishing aqueous dispersion jA+B) which has been stored for half a year after the static storage is used, and is prepared by using the above-mentioned "6·4.1 (c) using the freshly prepared aqueous dispersion (A) and the aqueous solution (8). Various tests were carried out in the same manner as in the evaluation of the polishing performance of the chemical mechanical polishing water system. The results are shown in Table 4. / From the result D, the water dispersion (A+B) is mechanically ground, compared with the aqueous dispersion (A) after half a year of standing storage and the aqueous solution after storage for six months (8). Modulated chemistry: I) Mechanically ground water dispersion, the number of scratches is significantly increased. This is due to the formation of agglomerates of colloidal ceria C1 contained in the chemical mechanical polishing aqueous dispersion (A+B) after six months of standing storage.夕97127579 31 200919568 (CO5 Comparative Example 7 Mass % CD cd Potassium Hydroxide Hydroxide (N1 OJ OJ 1 - Η CO o* LQ CO ezi ytmc ι-Η 檬酸酸t## Acid acetylene glycol type non-ion过 过 cd cd cd 1 LO 卜 · - J cm ' argon oxidation clock eva τ - Η 1 - Η CD <= ί LO cd OJ CZ5 species r - Η 〇〇 CU citric acid t##酸m S·叫I!屮j4/ 4B1. ^ m tO毋hydrogen peroxide than car exchange example 5 mass% 1—^ C3 cd potassium hydroxide CNI barium argon oxide (ΝΪ rH CN1 1 —Η CO CZ> to CV3 CZ5 Type 1 * citric acid si 1& ^ >1 tf jir κ3 毋 hydrogen peroxide Comparative Example 4 mass % 〇〇> cd potassium hydroxide 1 LO cd inch oi hydroxide Cvl (N3 t CO CZ5 LO Bu·(N1 CD vane .tfhit ^Η (N1 CU citrate ' 1 ji, Mi bag ό ^ hydrogen peroxide Example 3 mass % Ο LO Hydroxide 彳 1 ° Ο CO Potassium hydroxide oi Cvl 1—H ς〇C=5 CO c^i CO 〇 species OJ ε malonic acid cis-butadiene si M屮>d/ 4lkL m t0 hydrogen peroxide Example 2 mass % 〇CZ5 CO Hydroxide 1 LO 〇〇* 0〇potassium hydroxide 1—Η cxi esi ,.* oo cd i—H LO <〇 type a: cis-butene 2 ig·disc ff tO毋hydrogen peroxide Example 1 Quality % cd potassium hydroxide 1 〇〇〇〇CQ argon #Ubif CM i—Η CM T_ ( CO ο ΙΛ oi τ1· "H CM cz> vane .lfr.il Citric acid: acid m il屮Mi miscondensation o ^ Hydrogen peroxide composition name dioxane test f bio-compound other additive composition name polymethacrylate salt biochemical material do not acidify know not interface active agent oxidant extinction τ-· 03 City CO domain 哒#

Vi 61SLZ\L6 200919568 (表4)Vi 61SLZ\L6 200919568 (Table 4)

實施例1 比較例1 保存期間 剛調製完後 6個月 6個月 第1組成物 組成物名 A A 漿料(A+B) 靜置保存 pH 8.8 8.8 平均二次粒徑(nm) 45 45 内部矽烷醇基量(xlO23個/g) 3. 72 3. 72 第2組成物 組成物名 B B pH 12.5 12.5 漿料(Α+Β) pH 8.9 8.9 8.6 平均二次粒徑(nm) 77 77 160 研磨速度 (A/min) 銅膜 560 560 560 氮化鈕膜 550 550 510 PEHOS 膜 610 610 580 BD膜 98 98 110 刮痕數(個/區域) 0 0 28 97127579 33 200919568 6· 5實施例2及比較例2 6· 5. 1實施例2 (a) 第1組成物之調製 ,上述6. 1(b)含膠體:氧化⑪粒子G2之水分散體之 二:」所调製的含膠體二氧化矽C2之水系分散體,以換 ,為無機粒子為相當於16.G f量%的量予以加人後,添加 =乳化鉀將pH調整為8.5。接著,以總構成成分之合計 里成為100質量%的方式加入離子交換水後,藉孔徑_ 之過濾器進行過濾、’得到水系分散體(〇。又,第i組成 :⑹中之膠體二氧化石夕C2係均勾分散,其平均二次粒徑 為 78nm 〇 (b) 第2組成物之調製 ,相备於1.2質夏%之量的喹啉酸及相當於2 4質量% 的;丨貞τ烯—酸洛解於離子交換水,再添加相當於〇· 貝之乙炔二醇型非離子系界面活性齊j「SWynoMM」 (Απ Products japan 公司製),其後,將上述「6 2(a) 含聚丙烯酸鹽P1之水溶液的調製」所調製之含聚丙稀酸 鹽^的水溶液,以換算為聚合物重量為相當於18質量% 勺里予以添加,攪拌15分鐘後,添加氫氧化鉀將pH調整 為13.0。接著,以總構成成分之合計量成為1〇〇質量%的 ^式力:入離子交換水後,藉孔㈣.45//m之過濾、器進行過 L二得到水溶液(D)。針對實施例2所使用之第i組成物 及弟2組成物,整合示於表3。 (c) 使用剛調製完後之水系分散體(c)及剛調製完後之水 97127579 34 200919568 溶液⑻所調製的化學機械研 月& 評價 尺系刀政體的研磨性 將ru凋製兄後之水系分散體(c)與調— 與純水,依重量比2 : i /、二π灸之水溶液(D) 3〇質量%之過氧化氫水(第 ^進行混合。其後,將 相當於0.5胃量%的量進行二成物換异為過氧化氫為 水系分散體(C+D)。此化學;二研:製成化學機械研磨用Example 1 Comparative Example 1 6 months after the preparation of the storage period 6 months 6 months The composition of the first composition AA slurry (A + B) Static storage pH 8.8 8.8 Average secondary particle size (nm) 45 45 Internal Amount of stanol group (xlO23/g) 3. 72 3. 72 Composition of the second component BB pH 12.5 12.5 Slurry (Α+Β) pH 8.9 8.9 8.6 Average secondary particle size (nm) 77 77 160 Grinding Speed (A/min) Copper film 560 560 560 Nitride button film 550 550 510 PEHOS film 610 610 580 BD film 98 98 110 Number of scratches (number / area) 0 0 28 97127579 33 200919568 6· 5 Example 2 and comparison Example 2 6· 5. 1 Example 2 (a) Preparation of the first composition, the above 6. 1 (b) colloid: oxidized 11 particles G2 in the form of an aqueous dispersion: "The prepared colloidal dioxide The aqueous dispersion of 矽C2 was changed, and the inorganic particles were added in an amount corresponding to 16.g f %, and the pH was adjusted to 8.5 by adding emulsified potassium. Then, ion-exchanged water was added so that the total amount of the total components was 100% by mass, and then filtered by a filter of pore size _ to obtain an aqueous dispersion (〇. Further, the i-th composition: (6) colloidal oxidation The Shixi C2 system is uniformly dispersed, and its average secondary particle size is 78nm 〇(b) The second composition is prepared, and is prepared in an amount of 1.2% by mass of quinolinic acid and equivalent to 24% by mass; The 贞τ-ene acid is dissolved in the ion-exchanged water, and the non-ionic interface activity equivalent to 〇·贝 acetylene glycol is added to the “SWynoMM” (manufactured by Απ Products japan), and then the above “6 2 (a) Preparation of an aqueous solution containing polyacrylate P1" The aqueous solution containing the polyacrylic acid salt prepared by adding "approximately 18 mass% of the weight of the polymer is added, stirred for 15 minutes, and then added with hydrogen peroxide. Potassium was adjusted to a pH of 13.0. Then, the total amount of the total constituents was 1% by mass of the force: after entering the ion-exchanged water, the filter was passed through a hole of (45).45//m. Aqueous solution (D). For the ith composition and the second brother used in Example 2 The composition and integration are shown in Table 3. (c) Using the water-based dispersion (c) immediately after preparation and the water after the preparation of the water 97127579 34 200919568 solution (8) prepared by the chemical mechanical research month & evaluation ruler knife body The abrasiveness will be ru ruined by the water dispersion (c) and adjusted with pure water, by weight ratio 2: i /, two π moxibustion aqueous solution (D) 3 〇 mass% of hydrogen peroxide water (the first ^Mixed. After that, the amount of the equivalent amount of 0.5% by weight is diversified into hydrogen peroxide as an aqueous dispersion (C+D). This chemistry; Eryan: used for chemical mechanical polishing

CC

L ^ pH λ 9 S ^ a , 機械研磨用水系分散體(C+D) 之PH為9_3。使用此化學機械 根據上述「6.3化學機械研磨 : 進仃各種試驗。將其結果示於表5。 =)使用調製完經半年後之水系分散體 研磨性能評價 “機械研磨用水系分散體的 粒從為86nm。又,靜詈俾在主生你—U / 、L ^ pH λ 9 S ^ a , the mechanical grinding water dispersion (C+D) has a pH of 9_3. Use this chemical machine according to the above "6.3 chemical mechanical polishing: various tests are carried out. The results are shown in Table 5. =) The evaluation of the polishing performance of the aqueous dispersion after half a year of preparation is used. It is 86nm. Also, quietly in the Lord, you - U / ,

静置保存+年後之水糸分散體(C)之PH 13.0 —方面,靜置保存半年後之水溶液⑻之邱為 使用此靜置保存半年後之水系分散體(c)及靜置保存半 /後之水溶液(D),與使用上述r6.5 l(c)使用剛調製完 後之水系分散體(c)及水溶液(D)所調製的化學機械研磨 用水系分散體的研磨性能評價」同樣地進行各種試驗。將 其結果示於表5。 97127579 35 200919568 由此結杲,可知使用靜置保存半年後之水系分散體(C) 與靜置,存半年後之水溶液⑼所調製的化學機械研磨用 水系分散體,具有與使用剛調製完後之水系分散體((^及 剛調製完後之水溶液(D)所調製的化學機械研磨用水系分 散體同等的研磨性能。 6 · 5. 2比較例2 〇 將剛調製完後之水系分散體(〇與剛調製完後之水溶液 (D)與Λ水,以重$比2 : j : 3之比例進行混合,調製化 ^幾械研磨用水系分散體(⑽)。將此化學機械研磨用水 系分散體(C+D)置入密閉容器中’將其於肌恒溫槽内靜 靜置保存後之化學機械研磨用水系分散 體(⑽係確遇到膠體二氧切^之沉殿,分 :定移體二氧化石夕C2之平均二次粒徑後,結二 (二用:m半,之化學機械研磨用水系分散體 奸.々.i(c)使用剛調製完後之水系分 表5。、」门樣地進仃各種試驗。將其結果示於 由具結果 季分散體⑹靜置保存半年後之化學機械研磨用水 散體⑹與靜置伴用靜置保存半年後之水系分 械研磨用水系分水溶液⑼所調製的化學機 糸刀放體,IL化组_PETE〇s膜之研磨速产 97127579 36 200919568 降低,刮痕數明顯增加。此係由於靜置保存半年後而化學 機械研磨用水系分散體(C+D)所含之膠體二氧化矽C2形 成凝集體所致。 ί 97127579 37 200919568 (表5) 實施例2 比較例2 保存期間 剛調製完後 6個月 6個月 第1組成物 組成物名 C C 漿料(C+D) 靜置保存 pH 8.5 8.5 平均二次粒徑(nm) 78 78 内部矽烷醇基量(xlO23個/g) 3.70 3.70 第2組成物 組成物名 D D pH 13. 0 13.0 漿料(C+D) pH 9.3 9.3 9.1 平均二次粒徑(nm) 86 86 180 研磨速度 (A/min) 銅膜 500 500 500 氮化鈕膜 530 530 490 PETE0S 膜 510 510 430 BD膜 70 70 90 刮痕數(個/區域) 0 0 32In the case of pH 13.0 of the leeches dispersion (C) after standing and storing for 5 years, the aqueous solution (8) after standing for half a year is used to store the aqueous dispersion (c) and the stationary storage half after half a year of use. / After the aqueous solution (D), evaluation of the polishing performance of the chemical mechanical polishing aqueous dispersion prepared by using the aqueous dispersion (c) and the aqueous solution (D) immediately after the preparation of the above r6.5 l (c) Various tests were carried out in the same manner. The results are shown in Table 5. 97127579 35 200919568 From this, it is known that the aqueous dispersion (C) which has been stored for six months after standing and the chemical mechanical polishing aqueous dispersion prepared by the aqueous solution (9) which has been left for half a year after storage, has been prepared and used immediately after preparation. The water-based dispersion ((the same as the chemical mechanical polishing aqueous dispersion prepared by the aqueous solution (D) immediately after preparation) has the same polishing performance. 6 · 5. 2 Comparative Example 2 〇 Immediately after the preparation of the aqueous dispersion (〇) The aqueous solution (D) and the hydrophobic water immediately after preparation are mixed at a ratio of weight ratio of 2: j: 3 to prepare a water-based dispersion ((10)). The dispersion (C+D) is placed in a closed container. The chemical mechanical polishing water dispersion after it is stored in a muscle thermostat ((10) is indeed a colloidal dioxotomy. : After the average secondary particle size of the shifting body of the dioxide dioxide C2, the knot two (two uses: m half, the chemical mechanical grinding water dispersion dispersion. 々.i (c) using the freshly prepared water system Table 5, "The door sample into the various tests. The results are shown in the results of the season Body (6) Chemical mechanical polishing water dispersion after six months of standing storage (6) and static storage with a static storage for half a year after the water system of the mechanical separation of the water system (9) prepared by the chemical machine file release, IL group _PETE〇 Rapid growth of s film 97127579 36 200919568 Reduced, the number of scratches increased significantly. This is due to the colloidal ceria C2 contained in the chemical mechanical polishing water dispersion (C+D) after six months of standing storage. ί 97127579 37 200919568 (Table 5) Example 2 Comparative Example 2 6 months after the completion of the storage period 6 months 6 months Composition of the first composition CC name slurry (C+D) Static storage pH 8.5 8.5 Average Secondary particle size (nm) 78 78 Internal stanol group amount (xlO23/g) 3.70 3.70 Second composition composition name DD pH 13. 0 13.0 Slurry (C+D) pH 9.3 9.3 9.1 Average secondary particle Diameter (nm) 86 86 180 Grinding speed (A/min) Copper film 500 500 500 Nitride button film 530 530 490 PETE0S Film 510 510 430 BD film 70 70 90 Number of scratches (number / area) 0 0 32

97127579 38 200919568 6. 6實施例3及比較例3 6· 6· 1實施例3 (a )第1組成物之調製 制4 含膠體:氧切粒子G2之水分散體之 =二:調製的含膠體二氧切C2之水系分散體,以換 =無機粒子為相當於15.0質量%的量予以加入後,添加 將PH調整為9.0。接著,以總構成成分之合計 100質量%的方式加人離子交換水後,藉孔徑^ 進仃過;慮,得到水系分散體⑻。又,第^ :(E)中之膠體二氧化石夕C2係均句分散,其平均二次粒徑 馬 75nm ° (b)第2組成物之調製 旦將相當於U質量%之量的順丁烯二酸及相當於2 4質 =之f的丙二酸溶解於離子交換水’再添加相當於〇 6 貝里%之乙炔一和型非離子系界面活性劑「如吻⑽挪」97127579 38 200919568 6. 6 Example 3 and Comparative Example 3 6·6· 1 Example 3 (a) Preparation of the first composition 4 Colloid: Water dispersion of oxygen-cut particles G2 = 2: Modulated content The aqueous dispersion of colloidal dioxygen C2 was added in an amount corresponding to 15.0% by mass of the inorganic particles, and the pH was adjusted to 9.0. Then, ion-exchanged water was added so as to add 100% by mass of the total constituent components, and then the pores were passed through; and the aqueous dispersion (8) was obtained. Further, in the colloidal dioxide dioxide C2 system in the above ^ (E), the average secondary particle size is 75 nm ° (b) The modulation of the second composition is equivalent to the amount of U mass %. Butic acid and malonic acid equivalent to 24% = f are dissolved in ion-exchanged water' plus acetylene- and non-ionic surfactants equivalent to 〇6 Berry% "like kiss (10)

Pr〇ducts Japan公司製),其後,將上述「6.咖 2丙烯酸鹽P3之水溶㈣調製」所調製之含聚丙稀酸 鹽^3的水溶液,以換算為聚合物重量為相當於3 〇質量% =里予以添加,攪拌丨5分鐘後,添加氫氧化鉀將邱調整 12.8接著,以總構成成分之合計量成為質量%的 =式加人離子父換水後’藉孔徑G· 45 # m之m進行過 ^得到水溶液⑻。針對實施例3所❹之第i組成物 及第2組成物,整合示於表3。 ⑷使用剛調製完後之水系分散體⑻及剛調製完後之 97127579 39 200919568 水洛液(F)所調製的 能評價 化學機械研磨用 水系 分散體的研磨性 將剛調製完後之水系 與純水,依重量比2:] , ( 乂、調製完後之水溶液(F) 30 f # °/^ .之比例進行混合。其後,將The product containing the polyacrylic acid salt (3) prepared by the above-mentioned "6. The preparation of the water-soluble (four) of the acrylate 2 acrylate P3" is equivalent to 3 〇 in terms of the weight of the polymer. The mass % = is added in the mixture, and after stirring for 5 minutes, potassium hydroxide is added to adjust the Qiu to 12.8. Then, the total amount of the total constituents becomes the mass % = the formula is added to the ion after the father changes the water' by the aperture G·45 # m The m was carried out to obtain an aqueous solution (8). The ith composition and the second composition according to Example 3 are collectively shown in Table 3. (4) Using the water-based dispersion (8) immediately after preparation and the 97127579 39 200919568 water solution (F) immediately after preparation, the grindability of the chemical mechanical polishing aqueous dispersion can be evaluated. Water, according to the weight ratio of 2:], (乂, after the preparation of the aqueous solution (F) 30 f # ° / ^. ratio of mixing. Thereafter, will

0貝里故過氧化氫水(第3組 二Z 水系分散體⑽)。此化:::1製成化學機械研磨用 ^ dH , p 1 化予機械研磨用水系分散體(E+F)0 Berry, hydrogen peroxide water (Group 3, two-Z aqueous dispersion (10)). This:::1 is made into chemical mechanical polishing ^ dH , p 1 is converted to mechanical grinding water dispersion (E+F)

粑壚上、:f .「。使用此化學機械研磨用水系分散體(E+F), 二丄6·3化學機械研磨試驗」所記載之試驗方法, 進仃各種试驗。將其結果示於表6。 (d)使用調製完經半年後 年後之水溶液(F)所調製 研磨性能評價 之水系分散體(E)及調製完經半 之化學機械研磨用水系分散體的 將水系刀放體(E)及水溶液(F)置入密閉容器中,將1於 251恒溫心靜聽存半年。半㈣置健後之水系純 體⑻中的膠體二氧化石夕C2係均句分散,其平均二次粒徑 為75nm。又,靜置保存半年後之水系分散體〇之邱為 9. 0。另一方面,靜置保存半年後之水溶液(1?)之為 12. 8。 使用此靜置保存半年後之水系分散體及靜置保存半 年後之水溶液(F),與使用上述r6.61(c)使用剛調製完 後之水系分散體(E)及水溶液(F)所調製的化學機械研磨 用水系分散體的研磨性能評價」同樣地進行各種試驗。將 其結果示於表6。 97127579 40 200919568 由此結果’可知使用靜置保存半年後之水系分散體⑻ 與靜置保存半年後之水溶液⑺所調製的化學機械研磨用 水系分散體’具有與使用剛調製完後之水系分散體⑻及 剛調製完後之水溶液(F)所調製的化學機械研磨用水系分 散體同等的研磨性能。 6. 6. 2比較例3 將剛調製完後之水系分散體(E)與剛調製完後 (F)與純水,以重量比2:】:3之比例進行混合,調製化 學機械研磨用水系分散體(請)。將此化學機械研磨用水 糸分散體(E+F)置入密閉容器中’將其於饥恒溫槽内靜 ^保存半年。半年靜置保存後之化學機械研剌水系分散 體(E+F)係確認到谬體二氧切C2之沉殿,分離為二芦。 測定膠體二氧化石夕C2之平均二次粒徑後,結果為約 二=存半年後之化學機械研磨用水系分散 二分散體 0. 0. UCB更用剛调製完後之水系分 二體⑻及水溶液(F)所調製的化學機械研磨用水系分散 =研純能評價」_地進行各輯驗。將其結果示於 糸果,確4到靜置保存半年後之化學機械研磨用水 散,係相較於使用靜置保存半年後之水系分 ., ,、靜置保存半年後之水溶液(F)所調製的化與满 械研磨用水系分散體,氮化㈣或職⑽膜之研磨= 97127579 41 200919568 降低,刮痕數明顯增加。此係由於靜置保存半年後而化學 機械研磨用水系分散體(E+F)所含之膠體二氧化矽C2形 成凝集體所致。粑垆上,:f. "The test method described in this chemical mechanical polishing aqueous dispersion (E + F), 丄 6.3 chemical mechanical polishing test" was used to carry out various tests. The results are shown in Table 6. (d) an aqueous dispersion (E) prepared by modulating the polishing performance of the aqueous solution (F) after half a year after preparation, and a water-based knife (E) prepared by dispersing the semi-chemical mechanical polishing aqueous dispersion The aqueous solution (F) was placed in a closed container, and the temperature was kept at 1 251 for half a year. The colloidal dioxide dioxide in the pure water (8) of the semi-fourth (4) is uniformly dispersed, and its average secondary particle diameter is 75 nm. In addition, the water dispersion after quiescent storage for half a year was 9.0. On the other hand, the aqueous solution (1?) after standing for six months was 12.8. The aqueous dispersion after half a year of storage and the aqueous solution (F) after half a year of standing storage are used, and the aqueous dispersion (E) and the aqueous solution (F) which have just been prepared after using the above r6.61 (c) are used. Various tests were carried out in the same manner as in the evaluation of the polishing performance of the prepared chemical mechanical polishing aqueous dispersion. The results are shown in Table 6. 97127579 40 200919568 From this result, it can be seen that the aqueous dispersion of the chemical mechanical polishing prepared by using the aqueous dispersion (8) after standing for half a year and the aqueous solution (7) after standing for half a year has the same meaning as the aqueous dispersion after the preparation. (8) The polishing performance equivalent to the chemical mechanical polishing aqueous dispersion prepared by the aqueous solution (F) immediately after the preparation. 6. 6. 2 Comparative Example 3 The water-based dispersion (E) immediately after preparation and the freshly prepared water (F) and pure water were mixed at a weight ratio of 2:::3 to prepare a chemical mechanical polishing water. System dispersion (please). The chemical mechanical polishing 用水 dispersion (E+F) was placed in a closed container, and it was stored in a hunger bath for half a year. After half a year of standing and storage, the chemical mechanical mortar water dispersion (E+F) confirmed the sinking of the sputum dioxo C2 and separated it into two reeds. After the average secondary particle diameter of the colloidal silica dioxide C2 is measured, the result is about two = half a year after the chemical mechanical polishing water dispersion second dispersion 0. 0. UCB is more than just after the preparation of the water system is divided into two bodies (8) The chemical mechanical polishing water-based dispersion prepared by the aqueous solution (F) = the evaluation of the pure product can be evaluated. The results are shown in the results. It is confirmed that the chemical mechanical polishing water is dispersed after half a year of standing storage, compared with the water system after half a year of using the static storage, and the aqueous solution after half a year of standing storage (F) The prepared chemical and full-grinding water dispersion, the nitriding (four) or the (10) film grinding = 97127579 41 200919568 reduced, the number of scratches increased significantly. This is due to the formation of agglomerates of colloidal ceria C2 contained in the chemical mechanical polishing aqueous dispersion (E+F) after standing for six months.

C 97127579 42 200919568 (表6) 實施例3 比較例3 保存期間 剛調製完後 6個月 6個月 第1組成物 組成物名 E E 漿料(E+F)靜 置保存 pH 9.0 9.0 平均二次粒徑(nm) 75 75 内部矽烷醇基量(xlO23個/g) 3. 75 3.75 第2組成物 組成物名 F F pH 12.8 12.8 漿料(E+F) pH 9.1 9.1 9.4 平均二次粒徑(nm) 82 82 175 研磨速度 (A/min) 銅膜 480 480 480 氮化钽膜 500 500 450 PETE0S 膜 490 490 410 BD膜 85 85 90 刮痕數(個/區域) 0 0 40C 97127579 42 200919568 (Table 6) Example 3 Comparative Example 3 6 months after the preparation of the storage period 6 months and 6 months The composition of the first composition EE slurry (E + F) was allowed to stand for pH 9.0 9.0 average twice Particle size (nm) 75 75 Internal stanol group amount (xlO23/g) 3. 75 3.75 Second composition composition name FF pH 12.8 12.8 Slurry (E+F) pH 9.1 9.1 9.4 Average secondary particle size ( Nm) 82 82 175 Grinding speed (A/min) Copper film 480 480 480 Tantalum nitride film 500 500 450 PETE0S Film 490 490 410 BD film 85 85 90 Scratch number (number / area) 0 0 40

L 97127579 43 200919568 6. 7比較例4 於將第2組成物之pH設 比較例4係相較於實施例j 疋為7.5的點大為不同。 (a )第1組成物之調製 %:上二匕⑷含膠體二氧化矽粒子ci之水分散體之 ' 調製」所調製的含膠骹-氫儿a 算為無機粒子為相當於T6 0二C1之水系分散體,以換 氫氧化鉀將PH調整為^的量予以加入後,添加 〇量成為100質量%的方式力。接著,以總構成成分之合計 之過濾、器進行過滅,得工到^入^子交換水後,藉孔徑1 P 體⑹中之膠體二散體⑹。又,水系分散 為45nm。 係均勻分散’其平均二次粒徑 (b )弟2組成物之調製 之目C質量%之量的嗤淋酸及相當於"質量% 之里的知棣酸溶解於離子 ' %之乙块三醇型非離子乂換水’再添加相當於0.6質量 C/ p H '、I 面'舌性劑「Surfyn〇i465」(AirL 97127579 43 200919568 6. 7 Comparative Example 4 The pH of the second composition was set to be substantially different from the point at which the example j 疋 was 7.5. (a) Modification % of the first composition: the bismuth-containing hydrogen hydride prepared by the 'modulation' of the aqueous dispersion of the upper bismuth (4) colloidal cerium oxide particle ci is regarded as an inorganic particle equivalent to T6 0 The water-based dispersion of C1 was added in such a manner that the pH was adjusted to be changed by potassium hydroxide, and the amount of the amount of niobium added was 100% by mass. Then, the filter is removed by the total amount of the total constituent components, and the colloidal dispersion (6) in the pores 1 P (6) is obtained by the work of the exchange of water. Further, the water system was dispersed to 45 nm. Is uniformly dispersed in the amount of the average secondary particle size (b) of the composition of the composition of the 2nd composition of the C content of the leaching acid and the equivalent of "% by mass of the knowledge of the acid dissolved in the ion '% of B Block triol type non-ionic hydrazine change water 'additional equivalent to 0.6 mass C / p H ', I surface 'tongue agent 'Surfyn〇i465' (Air

Products japan 公司製)。 y 彻」⑷r 烯酸鹽P2之水溶液的調製 、述6,2(b)含聚丙 水溶液’以換算為聚合物重^二之含聚丙_鹽以的 以添加,撲拌15分鐘後,系里:田於2. 4質的量予 接著,以總構成成分之鉀將PH調整為7·5。 離子交換水後,藉孔徑的方式加入 水溶液⑻。針對比較例/=1用之過濾器進行過遽,得到 成物,整合示於表3。所使用之第1組成物及第2級 97127579 44 200919568 (C)使用剛調製完後之水系分散體(G)及剛 ⑻所調製的化學機械研磨用水系分散體的研磨性: 將剛調製完後之水系分散體⑹與調製 與純水,依重量比2:1:3之比例進行混合 30質量%之過氧化氫水(第3組成物)以換 :當t〇·2質細量進行添加,調製成化學機= 水糸分散體㈣)。此化學機械研磨用水系分散體 之PH為8.9,與實施例丨所使用之化學機械研磨 :散卿)為相同值。又,此化學機械研磨用水系分散 脰。二:含,膠體二氧化矽π之平均二 7隨,與貫施例!所使用之化學機械研磨用水系分散體 (A+B)為相同粒徑。使用此介風技 + …1「 械研磨用水系分散體 (㈣)’根據上述「6.3化學機械研磨試驗」所記載之試 驗方法,進行各種試驗。將其結果示於表7。 由該結果癌認到,剛調製完後之化學機械研磨用八 散體(G+H),係相較於剛調製完後的化學機械研磨用水= 分散體U+B)’刮痕數明顯增加。此推測係由於第工粗成 物之PH高達10· 5,膠體二氧化矽之内部矽烷 、 4·20χ 1 023個/g,因此引起刮痕。 里间達 6. 8比較例5 比較例5係相較於實施们,於在第W成物中添加聚 (甲基)丙稀酸鹽、在第2組成物中未添加聚(甲基)丙稀酸 鹽的點大為不同。 97127579 45 200919568 (a )第1組成物之調製 將上述「6.1(a)合腴辨 調製」所調製的含::體,氧切粒子C1之水分散體之 管 膠體一氧化矽C1之水系分散體,以換 I’;;:立、子為相當於16.0質量%的量予以加入後,將上 二丙烯酸鹽P2之水溶液的調製」所調製之 =Λ所=厂Ρθ2的水溶液,以換算為聚合物重量為相當Products japan company). y "The preparation of the aqueous solution of (4) r enoate P2, the description of 6, 2 (b) aqueous solution containing polyacrylic acid" is added to the polyacrylic acid salt of the polymer weight, added, and mixed for 15 minutes, The amount of the field was 2.4, and the pH was adjusted to 7.5 with the total constituent potassium. After ion-exchanged water, the aqueous solution (8) is added by means of pore size. The filter for Comparative Example / =1 was subjected to enthalpy to obtain a product, and the integration is shown in Table 3. The first composition to be used and the second stage 97127579 44 200919568 (C) The polishing property of the chemical mechanical polishing aqueous dispersion prepared by using the water-based dispersion (G) and the fresh water (8) immediately after preparation: After the aqueous dispersion (6) and the preparation and pure water, 30% by mass of hydrogen peroxide water (third composition) is mixed at a weight ratio of 2:1:3 to be exchanged: when the amount of t〇·2 is fine Add, modulate into a chemical machine = aqueous dispersion (4)). The pH of the chemical mechanical polishing aqueous dispersion was 8.9, which was the same as the chemical mechanical polishing used in the Example: Sanqing. Further, this chemical mechanical polishing water is dispersed in hydrazine. Two: contains, the average of the colloidal cerium oxide π 2 with, with the application! The chemical mechanical polishing aqueous dispersion (A + B) used was the same particle diameter. This test was carried out according to the test method described in the above-mentioned "6.3 Chemical Mechanical Polishing Test" using the air-through technique + ... 1 "Mechanical Grinding Water Dispersion ((4))". The results are shown in Table 7. From the result of the cancer, it was recognized that the number of scratches in the chemical mechanical polishing after the preparation of the octahedron (G+H) was significantly higher than that of the chemical mechanical polishing water immediately after the preparation = dispersion U+B) . This is because the pH of the crude product is as high as 10. 5, and the internal decane of colloidal cerium oxide is 4,20 χ 1 023 /g, thus causing scratches. In the middle of the case, the comparative example 5 was compared with the embodiment, the poly(methyl) acrylate was added to the W-th product, and the poly(methyl) propyl group was not added to the second composition. The points of the dilute acid salt are quite different. 97127579 45 200919568 (a) Modification of the first composition The water dispersion of the colloidal cerium oxide C1 containing the water dispersion of the oxygen dispersion particle C1 prepared by the above-mentioned "6.1 (a) combined modulation" is dispersed. The body is replaced by I';;: Lithium is added in an amount equivalent to 16.0% by mass, and the aqueous solution prepared by the preparation of the aqueous solution of the upper diacrylate P2 is converted into an aqueous solution of Ρθ2 The weight of the polymer is quite

细脾· Η貝里%的置予以添加’㈣15分鐘後,添加氫氧化 鉀將pH調整為8 8 〇技裟 A ^00 f 又,水系分散體(i) >其平均二次粒徑為 Λ力人離子父換水後,藉孔徑1/zm之過遽 益進订過慮,得到水系分散體(I)c 中之膠體二氧化石夕C1係均勻分散 130nm。 (b )弟2組成物之調製 將相田於1.2質量%之量的喹啉酸及相當於"質量%The spleen and the mussels were added to the %. After (15 minutes), the pH was adjusted to 8 8 by adding potassium hydroxide. The water dispersion (i) > After the water-repellent ionic father changed the water, the pore diameter of 1/zm was used to obtain the colloidal silica dioxide in the aqueous dispersion (I)c, and the C1 system was uniformly dispersed by 130 nm. (b) Modification of the composition of the younger brother 2 The amount of quinolinic acid in the amount of 1.2% by mass and the equivalent of "% by mass

C 广量的檸檬酸溶解於離子交換水,再添加相當於0.6、質量 。之乙炔一醇型非離子系界面活性劑「―⑽5」(…C A large amount of citric acid is dissolved in ion-exchanged water, and the equivalent of 0.6 is added. Acetylene monool type nonionic surfactant "-(10)5" (...

Products Japan 公司製)。立% 、)其後,添加虱氧化鉀將PH調 ," 者以總構成成分之合計量成為1〇〇質量% 的方式加入離子交換火尨 # n 、里4 n Μ 错孔徑0.45"之過遽器進行 :屢,传到水溶液⑴。針對比較例5 丁 物及第2組成物,整合示於表3。 又弟i、、且成 (〇使用調製後經⑽月之水;分散體⑴ 月之水溶液⑺所調製的化學機械研磨用 磨性能評價 刀狀粒的研 97127579 46 200919568 將水系分散體⑴及水溶液⑺置入密閉溶器令 抓恒溫槽内靜置保存“固月。靜置保存 :別於 ^散體⑴確認到膠體二氧化石夕π之沉殿物=系 層’且呈凝膠化。此時之膠體二氧化石夕 工刀離為2 徑為·龍。由此可知,膠體二氧化石夕π :if:性顯者低下。由上述’水系分散體⑴之狀能差 4而無法進行研磨評價試驗。 狀心差 系分散體⑴之沛為88。另^置保存1個月後之水 之水溶液⑺之個月後 6· 9比較例6 /、、,,。果。併不於表7。 比較例6係相較於實施 定為7.5、將第2組成物之、:第二成物之PH設 其中,使用第1組成物盥笛9 ;為 的點大為不同。 磨用水系分散體中之氫氧化鉀、物戶:5周製之化學機械研 比較例6中為相同。 、的&計量,係於實施例1及 (a)第1組成物之調製 將上述「6. l(a)含膠體二氧化 調製」所調製的含膠體二氧 /之水为政體之 算為無機粒子為相當於 ^之水系分散體,以換 氫氧化鉀將PH調整為7 5。=/°的量予以加入後’添加 量成為100質量%的方六、士 著,以總構成成分之合計 之過濾器進行過浦,/口入離子交換水後,藉孔徑_ 體⑴中之膠體-‘氧化;^系分散體⑴。又’水系分散 為4〇nm。 氧化夕C1係均句分散,其平均二次粒徑 97127579 47 200919568 (b)第2組成物之調製 將相當於1.2質量%之量的喹啉酸及相當於1.2質量% 之里的杈椽酸溶解於離子交換水,再添加相當於〇· 6質量 %之乙块一醇型非離子系界面活性劑「Surfyn〇i465」(AirProducts Japan company).立%,) Then, add potassium sulphate to adjust the pH, and add the ion exchange 尨# n, 里 4 n 错 wrong aperture 0.45" in a total mass of the total constituents. The passer is carried out: repeatedly, passed to the aqueous solution (1). For the comparative example 5 and the second composition, the integration is shown in Table 3. Further, i, and 成 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( (7) Place the closed solution so that the trap can be stored in the constant temperature tank. “Solid month. Static storage: Do not separate the solid body (1) and confirm that the colloidal silica dioxide π 之 之 = = = = = = 且 且 且 且 且 且 且 且 。 。 In the case of the colloidal silica dioxide, the diameter of the colloidal stone is 2 dragons. It can be seen that the colloidal silica dioxide has a lower π:if: the lower the performance. The above-mentioned 'aqueous dispersion (1) has a difference of 4 and cannot be performed. The evaluation test of the grinding. The dispersion of the centrifugation dispersion (1) was 88. The storage of the aqueous solution of water after one month (7) was followed by the comparison of the comparative example 6 /, ,, and . In the comparative example 6, the pH of the second composition is set to 7.5, the pH of the second composition is set to be the same, and the first composition is used as the flute 9; the points are greatly different. The potassium hydroxide in the dispersion, the material household: the 5-week chemical mechanical research is the same in Comparative Example 6. The & According to the preparation of the first embodiment and the first composition of the above (a), the colloidal dioxygen/water prepared by the above-mentioned "6.1 (a) colloidal oxidation preparation" is regarded as an inorganic particle. ^ The aqueous dispersion is adjusted to a pH of 75 by the change of potassium hydroxide. The amount of addition is 100% by mass, and the total amount of the components is the total amount of the filter. After passing through the ion exchange water, the pores in the pore size _ body (1) are oxidized; the dispersion is (1) and the water system is dispersed at 4 〇 nm. The oxidized eve C1 system is uniformly dispersed, and the average is twice. Particle size 97127579 47 200919568 (b) Preparation of the second composition The amount of quinolinic acid equivalent to 1.2% by mass and citric acid equivalent to 1.2% by mass are dissolved in ion-exchanged water, and the equivalent amount is added. 6 mass% of the block-alcohol type nonionic surfactant "Surfyn〇i465" (Air

Products Japan公司製),其後,將上述「6· 2(b)含聚丙 烯酸鹽P2之水溶液的調製」所調製之含聚丙烯酸鹽p2的 水溶液,以換算為聚合物重量為相當於2. 4質量%的量予 以添加,授摔15分鐘後,添加氯氧化卸將pH調整為13.5。 接著,以總構成成分之合計量成為1〇〇質量%的方式加入 離子交換水後,藉孔徑〇.45Am之過遽器進行過遽,得到 水溶液α)。針對比較例6所使用之第i組成物及第2植 成物,整合示於表3。 、 (c )使用剛調製完後之匕会八 』衣凡傻 <水糸分散體(κ)及剛調 ^㈦所調製的化學機械研磨用水系分散體的研磨性能The product of the polyacrylate p2 prepared by the preparation of the above-mentioned "6-2 (b) preparation of an aqueous solution containing polyacrylate P2" is equivalent to 2. The amount of 4% by mass was added, and after 15 minutes of dropping, the pH was adjusted to 13.5 by adding chlorine oxidation. Then, ion-exchanged water was added so that the total amount of the total constituent components became 1% by mass, and then the mixture was passed through a crucible having a pore diameter of .45 Am to obtain an aqueous solution α). The ith composition and the second plant used in Comparative Example 6 are collectively shown in Table 3. (c) using the polishing performance of the chemical mechanical polishing water dispersion prepared by the 匕 』 』 衣 & & & 糸 糸 糸 糸 糸 糸 糸 糸 κ κ κ κ 刚 刚 刚 刚 刚 刚 刚

U 與水溶液α) 30質量%之過氧化氫水(第3組成物)以:::過f,,將 相當於0.2質量%的量進行添加,調、化虱為 水系分散體⑴L)。此化學機械研磨用^ ^械研磨用 之PH為9.5。使用此化學機械研磨:二:體(_ 根據上述「6·3化學機械研磨試驗」所記载 進行各種試驗。將其結果示於表7。 戟乏試驗方法, 由該結果確認到,剛調製完後 97127579 ^械研磨用水系分 200919568 散體α+L),係相較於剛調製完後的化學機械研磨用水系 分散體(A+B) ’銅膜之研磨速度降低。此推測係由於相對 於化學機械研磨用水系分散體(K+L)之PH值,第J組成物 pH值過低,故剛調製完後的pH不穩定所致。 6. 10比較例7 ,較例7係相較於實施例丨,於因未在第2組成物中添 加氫氧化鉀而pH值為3. 5的點大為不同。 (a )第1組成物之調製 第1組成物係使用上述「6.4. 1(〇第丨組成物之調製」 所調製的水系分散體(A)。 (b)第2組成物之調製 將相當於1.2質量%之量的喹啉酸及相當於12質 〇之量的檸檬酸溶解於離子交換水,再添加相當於〇 6質量 %之乙炔二醇型非離子系界面活性劑「Surfyn〇1465」(AirU and aqueous solution α) 30% by mass of hydrogen peroxide water (third composition) is added in an amount of 0.2% by mass in excess of f, and is adjusted to be an aqueous dispersion (1) L). The pH for chemical mechanical polishing is 9.5. Using this chemical mechanical polishing: two: body (_ According to the "6.3 metal chemical polishing test" described above, various tests were carried out. The results are shown in Table 7. The lack of test method, confirmed from the results, just modulated After the completion of 97127579 ^ mechanical grinding water system 200919568 bulk α + L), compared to the chemical mechanical polishing water dispersion (A + B) just after the preparation of the copper film grinding speed is reduced. This is because the pH of the J-th composition is too low relative to the pH of the chemical mechanical polishing aqueous dispersion (K + L), so that the pH immediately after the preparation is unstable. The point of the pH value of 3.5 is greatly different from the case of the example of the present invention. (a) Preparation of the first composition The first composition is the aqueous dispersion (A) prepared by the above-mentioned "6.4. 1 (modulation of the second composition). (b) The modulation of the second composition will be equivalent. The amount of quinolinic acid in an amount of 1.2% by mass and citric acid equivalent to 12 masses are dissolved in ion-exchanged water, and an acetylene glycol-type nonionic surfactant corresponding to 6% by mass of cerium is added. "Surfyn〇1465 (Air

Products japan公司製)’其後,將上述「6. 2(b)含聚丙 烯奴鹽P2之水溶液的調製」所調製之含聚丙烯酸鹽的 水办液,以換算為聚合物重量為相當於2·4質量%的量予 以添加,攪拌15分鐘後。接著,以總構成成分之合計量 成為1〇〇貝1%的方式加入離子交換水後,藉孔徑0.45// m之過濾11進行㈣,得到水溶液(M)。又,水溶液(M)之 pH為3. 5。針對比較例7所使用之第1組成物及第2組成 物’整合示於表3。 (:)使用剛调製完後之水系分散體⑴及剛調製完後之水 '液(M)所凋衣的化學機械研磨用水系分散體的研磨性能 97127579 49 200919568 評價 將剛調製完後之k 與純水’依重量比2:·、}'散體(A)與調製完後之水溶液(M) 3?,之過氧化氫水(第.3組之成比= 相當於〇· 2質量%的旦%〜、 換^為過氧化氫為 水系分散體(A+M)。然而,^添加’/周製成化學機械研磨用Products made by japan, Inc., 'The polyacrylate-containing aqueous solution prepared by the above-mentioned "6. 2 (b) Preparation of aqueous solution containing polypropylene sulphate P2" is equivalent to the weight of the polymer. The amount of 2.4% by mass was added and stirred for 15 minutes. Next, ion-exchanged water was added in such a manner that the total amount of the total constituent components was 1% of mussels, and then (4) was carried out by filtration 11 having a pore diameter of 0.45 / / m to obtain an aqueous solution (M). 5。 The pH of the aqueous solution (M) is 3.5. The first composition and the second composition used in Comparative Example 7 are collectively shown in Table 3. (:) Grinding performance of a chemical mechanical polishing aqueous dispersion using the water dispersion (1) immediately after preparation and the water 'liquid (M) immediately after preparation 97127579 49 200919568 Evaluation will be just after preparation k with pure water 'by weight ratio 2:·,} 'loose body (A) and the prepared aqueous solution (M) 3?, hydrogen peroxide water (the ratio of the third group = equivalent to 〇 · 2 mass %%%~, change to hydrogen peroxide as aqueous dispersion (A+M). However, ^ add '/week for chemical mechanical polishing

於剛調製完後即發生膠體研:用水系分散體(㈣) 散穩定性顯^低可知膠體二氧化石⑽形成凝集體,分 小由Ϊ述、,化學機械研磨用水系分散體(A+M)之狀態差 二、去進行研磨5平價試驗。此係由於在(乙炔二醇型非 離系)界面活性劑的存在下,在酸性區域中若存在膠體 一氧化矽粒子,則有立即發生凝集的性質所致。因此,可 知第2組成物之pH必須存在於鹼性區域。 97127579 50 200919568 α嵴) 比較例7 剛調製完後 〇〇 〇〇 LO 寸 卜 CO LO CO 1 1 無法實施 無法實施 無法實施 無法實施 無法實施 無法實施 比較例6 剛調製完後 LO 卜· ο 1 LO CO LO ai 卜 CZ> 03 寸 ◦ LO LO CI3 Τ—Η CD 〇〇 α: CD 〇 比較例5 1個月後 〇〇 〇6 1 CO oo 〇〇" 1050 無法實施 無法實施 無法實施 無法實施 無法實施 無法實施 比較例4 剛調製完後 Ο LO C3 Τ'··"Ί LO 寸 4. 20 LO 卜’ CD od 卜 卜 〇 CO LO ◦ LO LO 〇 CO 〇0 CJ5 LO 〇 實施例1 剛調製完後 〇〇 od LO CO 卜 CO LO οά r—Η CT5 oo c— 卜 〇 CO LO <〇 LO LO Ό CO 〇0 05 <0 〇 保存期間 組成物名 CU 平均二次粒徑(nm) 内部矽烷醇基量 (Χίο23 個/g) 組成物名 a 平均二次粒徑(nm) 銅膜 氮化钽膜 PETE0S 膜 BD膜 刮痕數(個/區域) 腐蝕評價 1 第1組成物 第2組成物 混合漿料 啭.5 -61SLUL6 200919568 【圖式簡單說明】 圖1為本實施形態之化學機械研磨裝置之概略圖。 【主要元件符號說明】 10 半導體基板 12 漿料供給喷嘴 14 水供給喷嘴 16 漿料 18 研磨布 20 旋轉台 22 頂環 24 整修器 100 化學機械研磨裝置 97127579 52After the preparation of the gel, the colloidal research occurs: the water dispersion ((4)) The dispersion stability is low, and it is known that the colloidal dioxide (10) forms agglomerate, which is divided into small parts, and the chemical mechanical polishing water dispersion (A+ M) The state difference is two. The grinding 5 parity test is performed. This is due to the presence of colloidal cerium oxide particles in the acidic region in the presence of an (acetylene glycol-type non-ionic) surfactant, which causes immediate aggregation. Therefore, it is known that the pH of the second composition must exist in the alkaline region. 97127579 50 200919568 α嵴) Comparative Example 7 Immediately after preparation, 〇〇〇〇LO inch CO LO CO 1 1 cannot be implemented, cannot be implemented, cannot be implemented, cannot be implemented, cannot be implemented, cannot be implemented, Comparative Example 6, just after finishing, LO Bu· ο 1 LO CO LO ai 卜 CZ> 03 inch ◦ LO LO CI3 Τ—Η CD 〇〇α: CD 〇Comparative example 5 1 month later 16 1 CO oo 〇〇" 1050 Unable to implement cannot be implemented Unable to implement cannot be implemented Implementation cannot be implemented Comparative Example 4 Immediately after preparation Ο LO C3 Τ'··"Ί LO inch 4. 20 LO 卜 ' CD od Bu Bu CO LO ◦ LO LO 〇CO 〇0 CJ5 LO 〇Example 1 Just modulated After completion 〇〇 od LO CO 卜 CO LO οά r—Η CT5 oo c— 〇 〇 CO LO <〇LO LO Ό CO 〇0 05 <0 组成 Composition during the storage period CU Average secondary particle size (nm) Internal stanol group amount (Χίο23 pieces/g) Composition name a Average secondary particle diameter (nm) Copper film tantalum nitride film PETE0S Film BD film scratch number (number/region) Corrosion evaluation 1 First composition second Composition mixing slurry 啭.5 -61SLUL6 200919568 [Simple diagram BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a chemical mechanical polishing apparatus of the present embodiment. [Main component symbol description] 10 Semiconductor substrate 12 Slurry supply nozzle 14 Water supply nozzle 16 Slurry 18 Grinding cloth 20 Rotary table 22 Top ring 24 Dresser 100 Chemical mechanical polishing device 97127579 52

Claims (1)

200919568 十申請專利範圍: 1.種化學機械研磨用水系分散體調製用套組,係具 備: 第1組成物,係含有膠體二氧化矽及鹼性化合物,pH 為8以上且1〇以下;與 第2組成物,係含有聚(曱基)丙烯酸鹽及鹼性化合物, pH為11以上且13 5以下。 2. 如申請專利範圍» 1項之化學機械研磨用水系分散 體調製用套組,其中,上述第2組成物係進—步 活性劑。 1 3. 如申請專利範圍第2項之化學機械研磨用水系分散 體调製用套紐_,盆Φ ,卜;十、哭;、羊&十丨A ^ 其中上述界面活性劑為選自乙炔二醇、 乙块一醇之環氧乙烧加成物及乙炔醇的至少1種。 ^如申請專利範圍第!項之化學機械研磨用水系分散 體调製用套組,盆中,上述第2紿忐私及 、 化合物。 “巾丨衫2組成物係進-步含有酸性 5. 如申請專利範圍第4項之化學機械研磨用 體調製用套組,其中,上述酸性化 ’、刀月 .,D物為選自喹啉羧酸、 奎啉酉文、順丁烯二酸、丙二酸、摔 種。 计体0欠及頻果酸之至少1 6. 如申請專利範圍第丨項之化學機 體調製用套組’其中,上述膠體二氧化用:九乂 為30nm〜l〇〇nm。 句一次粒徑 7·如申請專利範圍第1項之化學機械研磨用水系分散 97127579 53 200919568 體5周製用套組,盆中,卜付[耳又f田《 \ ^ 具〒上迷聚(甲基)丙烯酸鹽之重量平均 分子量為 500, 〇〇〇〜3, 000, 000。 8.如申請專利範圍帛i項之化學機械研磨用水系分散 體調製用套組,其中,進—步具備含有氧化劑之第3 物。 • 9 · 一種化學機械研磨用水系分散體之調製方法,係、、3人 下述組成物而調製pH為8以上且12以下之化學機械;; 用水系分散體:第i組成物,係含有膠體二氧化石夕及 化合物,pH為8以上且1〇以下;與第2組成物,係含 聚(甲基)丙烯酸鹽及鹼性化合物,pIi為丨丨以 3 以下。 上且13.5 10.如申請專利範圍第9項之化學機械研磨用水:八五 體之調製方法,其中,進一步混合含有氧化劑之第:放 物’而調製pH為8以上且12以下之化學機械 ^組成 分散體。 唧磨用水系200919568 Ten patent application scope: 1. A chemical mechanical polishing aqueous dispersion preparation kit, comprising: a first composition comprising colloidal cerium oxide and a basic compound, having a pH of 8 or more and 1 〇 or less; The second composition contains a poly(indenyl)acrylate and a basic compound, and has a pH of 11 or more and 13 5 or less. 2. The chemical mechanical polishing water dispersion preparation kit according to the scope of the patent application, wherein the second composition is a step active agent. 1 3. For the chemical mechanical polishing water dispersion preparation for the Scope of Patent Application No. 2, pots Φ, Bu; X, Cry; Sheep & Shiyan A ^ wherein the above surfactant is selected from At least one of acetylene glycol, an ethylene bromide adduct of an acetophenone alcohol, and an acetylene alcohol. ^ If you apply for a patent range! The chemical mechanical polishing water-based dispersion preparation kit, in the pot, the above-mentioned second and private compounds. The composition of the chemical shirt polishing body according to the fourth aspect of the patent application, wherein the acidification is the same as the acidification, and the D is selected from the group consisting of quinolin. Porphyrin carboxylic acid, quinolinate, maleic acid, malonic acid, spoiled species. At least 1 of the body 0 owing and frequency acid. 6. The chemical body modulation kit of the scope of the patent application s Wherein, the above colloidal dioxide is used: 9 乂 is 30 nm 〜 l 〇〇 nm. Sentence primary particle size 7 · Chemical mechanical polishing water dispersion according to claim 1 of the scope of the patent item 97127579 53 200919568 Body 5 week system set, basin In the middle, the weight of the average weight of the poly (meth) acrylate is 500, 〇〇〇~3, 000, 000. 8. If the application scope is 帛i The chemical mechanical polishing water-based dispersion preparation kit, wherein the third embodiment containing the oxidizing agent is further provided. • 9 · A chemical mechanical polishing aqueous dispersion preparation method, and the following composition of 3 persons To modulate a chemical machine having a pH of 8 or more and 12 or less; The ith composition contains a colloidal silica dioxide and a compound having a pH of 8 or more and 1 Torr or less; and the second composition contains a poly(meth) acrylate and a basic compound, and pIi is 丨丨3. The following is a method for preparing a chemical mechanical polishing water according to claim 9 of the ninth aspect of the invention, wherein the oxidizing agent is further mixed with the first: an oxidizing agent to prepare a pH of 8 or more and 12 or less. Chemical machinery ^ composition of the dispersion. Honing water system \ J 97127579 54\ J 97127579 54
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