JP5464055B2 - Water-based cutting fluid and water-based cutting agent - Google Patents
Water-based cutting fluid and water-based cutting agent Download PDFInfo
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- JP5464055B2 JP5464055B2 JP2010122756A JP2010122756A JP5464055B2 JP 5464055 B2 JP5464055 B2 JP 5464055B2 JP 2010122756 A JP2010122756 A JP 2010122756A JP 2010122756 A JP2010122756 A JP 2010122756A JP 5464055 B2 JP5464055 B2 JP 5464055B2
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M129/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing oxygen
- C10M129/02—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing oxygen having a carbon chain of less than 30 atoms
- C10M129/04—Hydroxy compounds
- C10M129/06—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
- C10M129/08—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least 2 hydroxy groups
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2040/00—Specified use or application for which the lubricating composition is intended
- C10N2040/20—Metal working
- C10N2040/22—Metal working with essential removal of material, e.g. cutting, grinding or drilling
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Description
本発明は、半導体及び太陽電池等に使用されるシリコン、石英、水晶、化合物半導体磁石等のインゴット等の被加工材を切断するための水性切削液及び水性切削剤に関するものであり、特に砥粒の分散安定性及び水性切削剤の粘度安定性に優れ、しかも従来よりも加工精度の高い水性切削液及び水性切削剤に関するものである。 The present invention relates to an aqueous cutting fluid and an aqueous cutting agent for cutting workpieces such as ingots such as silicon, quartz, quartz, and compound semiconductor magnets used in semiconductors and solar cells, particularly abrasive grains. The present invention relates to an aqueous cutting fluid and an aqueous cutting agent that are excellent in dispersion stability and viscosity stability of an aqueous cutting agent and have higher processing accuracy than conventional ones.
硬脆材料のインゴットを切断する1つの方法として、ワイヤソー、切断刃による切断法が知られている。このワイヤソーによる切断法では、切削工具と被加工材との間の潤滑、摩擦熱の除去、切削屑の洗浄を目的として切削液が広く使用されている。
このような切削液としては、鉱物油を基油として、これに添加剤を加えたオイル系切削剤、ポリエチレングリコールあるいはポリプロピレングリコールを主成分とするグリコール系切削剤、及び界面活性剤の水溶液を主成分とする水性切削液等が挙げられる。
しかし、オイル系切削剤には切断部の冷却性に劣っており、また、被加工材や設備が汚染された場合、有機溶剤系洗浄液が必要で、最近の環境問題から適さない。また、グリコール系切削剤や界面活性剤の水溶液を主成分とする水性切削液は、切断時の粘度安定性と砥粒の分散安定性に劣るという欠点があった。
As one method for cutting an ingot of a hard and brittle material, a wire saw and a cutting method using a cutting blade are known. In this wire saw cutting method, a cutting fluid is widely used for the purpose of lubrication between a cutting tool and a workpiece, removal of frictional heat, and cleaning of cutting waste.
Examples of such cutting fluids include oil-based cutting agents in which mineral oil is used as a base oil and additives added thereto, glycol-based cutting agents mainly composed of polyethylene glycol or polypropylene glycol, and aqueous surfactant solutions. Examples thereof include an aqueous cutting fluid as a component.
However, the oil-based cutting agent is inferior in the cooling performance of the cut portion, and when the work material or equipment is contaminated, an organic solvent-based cleaning liquid is required, which is not suitable due to recent environmental problems. Further, the aqueous cutting fluid mainly composed of an aqueous solution of a glycol-based cutting agent or a surfactant has a defect that it is inferior in viscosity stability at the time of cutting and dispersion stability of abrasive grains.
上記のような問題を解決するため、例えば特開2000−327838号公報(特許文献1)では、多価アルコール又は多価アルコール誘導体を主成分として、砥粒分散性を付与するためにベンゾナイト、セルロース及び雲母を複合添加している。また、特開2006−278773号公報(特許文献2)では、グリコール類及び/又は水溶性エーテルと、ゼータ電位が0mV以上の粒子、特にアルミナとを含む水性切削液が提案されている。更に、特開2007−031502号公報(特許文献3)では、グリコール類とグリコールエーテル類と水を含有する水性切削液が提案されている。
しかしながら、半導体シリコンウエハのシリコンインゴットの口径が200mmから300mmへ、更に450mmと拡大している。また、太陽電池等に使用されるシリコンウエハの厚みは、年々薄くなってきている。このような口径及び厚みの変化に対応した水性切削液は提案されておらず、従来よりももっと加工精度の高い水性切削剤が求められていた。
In order to solve the above problems, for example, in Japanese Patent Application Laid-Open No. 2000-327838 (Patent Document 1), a polyhydric alcohol or a polyhydric alcohol derivative is a main component and benzonite is used to impart abrasive dispersibility. Combined addition of cellulose and mica. Japanese Patent Laid-Open No. 2006-278773 (Patent Document 2) proposes an aqueous cutting fluid containing glycols and / or a water-soluble ether and particles having a zeta potential of 0 mV or more, particularly alumina. Furthermore, JP 2007-031502 A (Patent Document 3) proposes an aqueous cutting fluid containing glycols, glycol ethers and water.
However, the diameter of the silicon ingot of the semiconductor silicon wafer is increased from 200 mm to 300 mm and further to 450 mm. Moreover, the thickness of the silicon wafer used for a solar cell etc. is decreasing year by year. No aqueous cutting fluid corresponding to such changes in the diameter and thickness has been proposed, and an aqueous cutting agent with higher processing accuracy than before has been demanded.
本発明は、上記事情に鑑みなされたもので、砥粒の分散安定性及び水性切削剤の粘度安定性に優れ、しかも従来よりも加工精度の高い水性切削液及び水性切削剤を提供することを目的とする。 The present invention has been made in view of the above circumstances, and provides an aqueous cutting fluid and an aqueous cutting agent that are excellent in the dispersion stability of abrasive grains and the viscosity stability of an aqueous cutting agent and have higher processing accuracy than conventional ones. Objective.
本発明者らは、上記目的を達するために鋭意検討を行った結果、(A)アセチレングリコール及び/又はそのアルキレンオキサイド付加物を水性切削液中に0.01〜20質量%含むことにより上記問題を解決できることを見出し、本発明をなすに至った。 As a result of intensive studies to achieve the above object, the present inventors have included (A) 0.01-20% by mass of the acetylene glycol and / or its alkylene oxide adduct in the aqueous cutting fluid. It was found that the problem can be solved, and the present invention has been made.
従って、本発明は、砥粒の分散安定性及び水性切削剤の粘度安定性に優れ、しかも従来よりも加工精度の高い下記の水性切削液及び水性切削剤を提供する。
請求項1:
シリコン、石英、水晶及び化合物半導体から選ばれる硬脆材料のインゴットの切断に用いる水性切削液であって、(A)アセチレングリコール及び/又はそのアルキレンオキサイド付加物を0.01〜20質量%と、(B)水を1〜20質量%と、(C)ジエチレングリコールを含む親水性多価アルコールを60〜98.8質量%とを含有してなることを特徴とする硬脆材料インゴット切断用水性切削液。
請求項2:
(C)成分の親水性多価アルコールがジエチレングリコールとポリエチレングリコールとからなる請求項1記載の水性切削液。
請求項3:
更に、(D)高分子型分散剤を0.01〜20質量%含む請求項1又は2記載の水性切削液。
請求項4:
(D)高分子型分散剤がスチレン・無水マレイン酸コポリマーの塩を含有した高分子である請求項3記載の水性切削液。
請求項5:
(C)親水性多価アルコール及び/又はその誘導体の水に対する溶解度が20℃で5質量%以上で、蒸気圧が0.01mmHg以下である請求項1乃至4のいずれか1項記載の水性切削液。
請求項6:
(A)成分が下記式(1)〜(3)で示されるアセチレングリコール類から選ばれる請求項1乃至5のいずれか1項記載の水性切削液。
請求項7:
請求項1〜6のいずれか1項に記載の水性切削液100質量部に対して、砥粒50〜200質量部を含んだ水性切削剤。
請求項8:
砥粒が、炭化珪素、アルミナ又はダイヤモンドである請求項7記載の水性切削剤。
請求項9:
砥粒が、炭化珪素である請求項8記載の水性切削剤。
請求項10:
請求項7〜9のいずれか1項に記載の水性切削剤を用いて、シリコン、石英、水晶及び化合物半導体から選ばれる硬脆材料のインゴットをワイヤーソーにより切断することを特徴とする硬脆材料インゴットの切断方法。
Accordingly, the present invention provides the following aqueous cutting fluid and aqueous cutting agent which are excellent in the dispersion stability of abrasive grains and the viscosity stability of an aqueous cutting agent and which have higher processing accuracy than conventional ones.
Claim 1:
An aqueous cutting fluid used for cutting an ingot of a hard and brittle material selected from silicon, quartz, quartz, and a compound semiconductor, (A) 0.01-20% by mass of acetylene glycol and / or its alkylene oxide adduct , (B) and 1 to 20 mass% of water, (C) a hydrophilic polyhydric alcohol from 60 to 98.8% by weight and characterized by containing a hard and brittle material ingot cutting aqueous cutting including diethylene glycol liquid.
Claim 2:
The aqueous cutting fluid according to claim 1, wherein the hydrophilic polyhydric alcohol (C) comprises diethylene glycol and polyethylene glycol.
Claim 3:
Furthermore, the aqueous cutting fluid of Claim 1 or 2 which contains 0.01-20 mass% of (D) polymer type dispersing agents.
Claim 4:
The aqueous cutting fluid according to claim 3, wherein (D) the polymeric dispersant is a polymer containing a salt of a styrene / maleic anhydride copolymer.
Claim 5:
The aqueous cutting according to any one of claims 1 to 4, wherein (C) the solubility of the hydrophilic polyhydric alcohol and / or derivative thereof in water is 5 mass% or more at 20 ° C and the vapor pressure is 0.01 mmHg or less. liquid.
Claim 6:
The aqueous cutting fluid according to any one of claims 1 to 5, wherein the component (A) is selected from acetylene glycols represented by the following formulas (1) to (3).
Claim 7:
The aqueous cutting agent containing 50-200 mass parts of abrasive grains with respect to 100 mass parts of the aqueous cutting fluid of any one of Claims 1-6.
Claim 8:
The aqueous cutting agent according to claim 7, wherein the abrasive grains are silicon carbide, alumina or diamond.
Claim 9:
The aqueous cutting agent according to claim 8, wherein the abrasive grains are silicon carbide.
Claim 10:
A hard and brittle material, characterized in that a hard and brittle material ingot selected from silicon, quartz, quartz and a compound semiconductor is cut with a wire saw using the aqueous cutting agent according to any one of claims 7 to 9. Ingot cutting method.
本発明によれば、アセチレングリコール及び/又はそのアルキレンオキサイド付加物を水性切削液中に0.01〜20質量%含むことにより、砥粒の分散安定性及び水性切削剤の粘度安定性に優れ、しかも従来よりも加工精度の高いという効果を有する。 According to the present invention, by containing 0.01 to 20% by mass of acetylene glycol and / or its alkylene oxide adduct in the aqueous cutting fluid, the dispersion stability of the abrasive grains and the viscosity stability of the aqueous cutting agent are excellent. Moreover, it has the effect that the processing accuracy is higher than in the prior art.
本発明の水性切削液は、(A)アセチレングリコール及び/又はアセチレングリコールのアルキレンオキサイド付加物を0.01〜20質量%を含む水性切削液である。アセチレングリコールは、下記式(1)で表されるものである。 The aqueous cutting fluid of the present invention is an aqueous cutting fluid containing 0.01 to 20% by mass of (A) acetylene glycol and / or an alkylene oxide adduct of acetylene glycol. Acetylene glycol is represented by the following formula (1).
また、アセチレングリコールのアルキレンオキサイド付加物は、下記式(2)で表されるアセチレングリコールのエチレンオキサイド/プロピレンオキサイドブロック型付加物又は下記式(3)で表されるアセチレングリコールのエチレンオキサイド/プロピレンオキサイドランダム型付加物である。 Also, the alkylene oxide adduct of acetylene glycol is an ethylene oxide / propylene oxide block type adduct of acetylene glycol represented by the following formula (2) or an ethylene oxide / propylene oxide of acetylene glycol represented by the following formula (3) Random type adduct.
上記式(1)のアセチレングリコールとしては、例えば、2,5,8,11−テトラメチル−6−ドデシン−5,8−ジオール、5,8−ジメチル−6−ドデシン−5,8−ジオール、2,4,7,9−テトラメチル−5−ドデシン−4,7−ジオール、8−ヘキサデシン−7、10−ジオール、7−テトラデシン−6,9−ジオール、2,3,6,7−テトラメチル−4−オクチン−3,6−ジオール、3,6−ジエチル−4−オクチン−3,6−ジオール、2,5−ジメチル−3−ヘキシン−2,5−ジオール等を挙げることでき、式(2)、式(3)のアセチレングリコールのアルキレンオキサイド付加物としては、上記アセチレングリコールのアルキレンオキサイド誘導体を挙げることができる。 Examples of the acetylene glycol of the above formula (1) include 2,5,8,11-tetramethyl-6-dodecin-5,8-diol, 5,8-dimethyl-6-dodecyne-5,8-diol, 2,4,7,9-tetramethyl-5-dodecin-4,7-diol, 8-hexadecin-7, 10-diol, 7-tetradecine-6,9-diol, 2,3,6,7-tetra And methyl-4-octyne-3,6-diol, 3,6-diethyl-4-octyne-3,6-diol, 2,5-dimethyl-3-hexyne-2,5-diol, and the like. Examples of the alkylene oxide adduct of (2) and acetylene glycol of formula (3) include the above-mentioned alkylene oxide derivatives of acetylene glycol.
その含有量は、0.01〜20質量%が好ましく、0.1〜10質量%が更に好ましく、0.1〜5質量%が最も好ましい。0.01質量%未満であると、加工精度の低下といったことが発生し、20質量%を超えると不溶解物の発生といったことが発生する。 The content is preferably 0.01 to 20% by mass, more preferably 0.1 to 10% by mass, and most preferably 0.1 to 5% by mass. If it is less than 0.01% by mass, the processing accuracy will be reduced, and if it exceeds 20% by mass, insoluble matter will be generated.
更に、本発明の水性切削液は、(B)水を1〜20質量%と、(C)の親水性多価アルコール及び/又はその誘導体を60〜98.98質量%含むことが好ましい。(B)水を10〜20質量%含むことが更に好ましく、(C)の親水性多価アルコール及び/又はその誘導体を80〜95質量%含むことが更に好ましい。水は、1質量%未満であると、加工精度の低下といった不具合が発生する場合があり、20質量%を超えると、水性切削液の粘度安定性低下といった不具合が発生する場合がある。親水性多価アルコール及び/又はその誘導体は、60質量%未満であると、砥粒分散性の低下といったことが発生し、98.98質量%を超えると加工精度の低下といったことが発生する。 Furthermore, the aqueous cutting fluid of the present invention preferably contains (B) 1 to 20% by mass of water and (C) 60 to 98.98% by mass of the hydrophilic polyhydric alcohol and / or derivative thereof. (B) It is more preferable to contain 10-20 mass% of water, and it is still more preferable to contain 80-95 mass% of hydrophilic polyhydric alcohol and / or its derivative of (C). If the water content is less than 1% by mass, a problem such as a decrease in machining accuracy may occur. If the water content exceeds 20% by mass, a problem such as a decrease in viscosity stability of the aqueous cutting fluid may occur. If the hydrophilic polyhydric alcohol and / or derivative thereof is less than 60% by mass, a decrease in abrasive dispersibility occurs, and if it exceeds 98.98% by mass, a decrease in processing accuracy occurs.
(C)の親水性多価アルコール及びその誘導体としては、エチレングリコール、ジエチレングリコール、トリエチレングリコール、ジプロピレングリコール、トリプロピレングリコール、ポリエチレングリコール等が挙げられる。ポリエチレングリコールとしては、平均分子量200〜1,000のものが好ましく、具体的にはポリエチレングリコール200、400等が用いられる。(C)成分としては、水に対する溶解度が20℃で5質量%以上であることが好ましく、蒸気圧が0.01mmHg以下が好ましい。水に対する溶解度が20℃で5質量%未満であると、ウエハ洗浄に有機溶剤の使用が必要になるといった不具合が発生する場合があり、蒸気圧が0.01mmHgを超えると、切削中での引火のおそれといった不具合が発生する場合がある。 Examples of the hydrophilic polyhydric alcohol (C) and derivatives thereof include ethylene glycol, diethylene glycol, triethylene glycol, dipropylene glycol, tripropylene glycol, and polyethylene glycol. As the polyethylene glycol, those having an average molecular weight of 200 to 1,000 are preferable, and specifically, polyethylene glycol 200, 400 or the like is used. As the component (C), the solubility in water is preferably 5% by mass or more at 20 ° C., and the vapor pressure is preferably 0.01 mmHg or less. If the solubility in water is less than 5% by mass at 20 ° C., there may be a problem that it is necessary to use an organic solvent for cleaning the wafer. If the vapor pressure exceeds 0.01 mmHg, the ignition is caused during cutting. In some cases, a problem such as a fear of the occurrence may occur.
更に、本発明の水性切削液は、(D)高分子型分散剤を0.01〜20質量%含むことが好ましく、0.1〜10質量%含むことが更に好ましい。0.01質量%未満であると、加工精度の低下といったことが発生し、20質量%を超えると切削液の増粘といったことが発生する。(D)高分子型分散剤としては、スチレン・無水マレイン酸コポリマーの塩を含有した高分子が好ましく、スチレン・無水マレイン酸共重合体アルキルエステルのアンモニウム塩、カリウム塩、ナトリウム塩等が挙げられる。この中では、スチレン・無水マレイン酸共重合体アルキルエステル・アンモニウム塩が好ましい。 Furthermore, the aqueous cutting fluid of the present invention preferably contains 0.01 to 20% by mass, and more preferably 0.1 to 10% by mass, of (D) a polymeric dispersant. If it is less than 0.01% by mass, the machining accuracy will be reduced, and if it exceeds 20% by mass, the cutting fluid will be thickened. (D) The polymer type dispersant is preferably a polymer containing a salt of a styrene / maleic anhydride copolymer, and examples thereof include ammonium salts, potassium salts, sodium salts and the like of styrene / maleic anhydride copolymer alkyl esters. . Of these, styrene / maleic anhydride copolymer alkyl ester / ammonium salt is preferred.
更に、本発明の水性切削剤は、(A)〜(D)を含む水性切削液100質量部に対して、砥粒を50〜200質量部含んだ水性切削剤であり、砥粒としては、炭化ケイ素、アルミナ、ダイヤモンド等が挙げられ、炭化ケイ素、ダイヤモンドが好ましい。砥粒が50質量部未満であると、シリコンインゴットの切断に時間を多く要するといった不具合が発生する場合があり、200質量部を超えると、砥粒分散性の低下といった不具合が発生する場合がある。 Furthermore, the aqueous cutting agent of the present invention is an aqueous cutting agent containing 50 to 200 parts by mass of abrasive grains with respect to 100 parts by mass of the aqueous cutting fluid containing (A) to (D). Examples thereof include silicon carbide, alumina, diamond and the like, and silicon carbide and diamond are preferable. If the abrasive grain is less than 50 parts by mass, there may be a problem that it takes a long time to cut the silicon ingot, and if it exceeds 200 parts by mass, a problem such as a decrease in abrasive dispersibility may occur. .
なお、本発明の水性切削液及び水性切削剤の性能を損なわない範囲で、水溶性高分子、雲母、疎水性シリカ、カルボン酸等を添加しても構わない。 In addition, you may add water-soluble polymer, mica, hydrophobic silica, carboxylic acid, etc. in the range which does not impair the performance of the aqueous cutting fluid and aqueous cutting agent of this invention.
本発明の水性切削剤は、半導体、太陽電池の製造に用いられるシリコン、石英、水晶、化合物半導体等の硬脆材料のインゴットをワイヤソーを用いて切断する場合に有効に用いられるもので、その使用法は従来の切削剤と同様である。
マルチワイヤソーには通常2つのガイドローラーが備わっている。そのガイドローラーには一定の間隔で溝が彫られており、ワイヤーはガイドローラーの溝に1つ1つ巻き付けられて、一定の張力で平行に保持されている。
切断中はワイヤーにスラリーを掛けて、ワイヤーを高速で双方向もしくは一方向で走行させる。ワイヤーの上方向からは加工サンプルを載せたテーブルが降下し、ほぼ同形状で多数枚同時に切断する。
この工作物が降下する方式の他にテーブルを加工サンプルと共に上昇させる工作物上昇方式がある。
マルチワイヤソー切断ではワイヤーに砥粒を含んだスラリーを付着させて加工サンプル間に供給し、切断するという一連の工程が重要な作業となる。
The water-based cutting agent of the present invention is effectively used when cutting ingots of hard and brittle materials such as silicon, quartz, quartz, compound semiconductors, etc. used in the manufacture of semiconductors and solar cells, using a wire saw. The method is the same as for conventional cutting agents.
Multi-wire saws are usually equipped with two guide rollers. Grooves are carved in the guide roller at regular intervals, and the wires are wound one by one in the groove of the guide roller and held in parallel with a constant tension.
During cutting, slurry is applied to the wire, and the wire is run in high speed at both directions. From the upper side of the wire, the table on which the processed sample is placed descends, and a large number of the same shape is cut simultaneously.
In addition to the method of lowering the workpiece, there is a workpiece raising method for raising the table together with the machining sample.
In multi-wire saw cutting, a series of processes in which a slurry containing abrasive grains is attached to a wire, supplied between processed samples, and cut is an important operation.
以下、実施例及び比較例を示し、本発明を具体的に説明するが、本発明は下記の実施例に制限されるものではない。なお、下記の例において、部及び%はそれぞれ質量部、質量%を示す。 EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example. In addition, in the following example, a part and% show a mass part and the mass%, respectively.
[実施例1]
純水を13%、PEG200を18%、ジエチレングリコールを68%投入混合後、アセチレングリコールA(2,5,8,11−テトラメチル−6−ドデシン−5,8−ジオールのエチレンオキサイド付加体、エチレンオキサイド付加モル数4)1%の混合液を作製した(以下、これをM−1とした。)。更に、炭化ケイ素(SiC)砥粒(信濃電気製錬社製、GC♯1000、平均粒子径11μm)を加えて撹拌し、シリコンインゴット切断用スラリーを得た。
シリコンインゴット切断用スラリーを用いて、砥粒の分散安定性をスラリー作成直後と24時間静置後の平均粒子径を測定することにより評価した。その結果を表3に示す。また、以下の条件でシリコンインゴットを切断し、水性切削剤の粘度安定性及び加工精度を評価した。その結果を表3に示す。
[Example 1]
After mixing 13% pure water, 18% PEG200, and 68% diethylene glycol, acetylene glycol A (ethylene oxide adduct of 2,5,8,11-tetramethyl-6-dodecyne-5,8-diol, ethylene Oxide addition mole number 4) A 1% mixed solution was prepared (hereinafter referred to as M-1). Furthermore, silicon carbide (SiC) abrasive grains (manufactured by Shinano Denki Smelting Co., Ltd., GC # 1000, average particle size 11 μm) were added and stirred to obtain a slurry for cutting a silicon ingot.
Using the slurry for cutting a silicon ingot, the dispersion stability of the abrasive grains was evaluated by measuring the average particle size immediately after slurry preparation and after standing for 24 hours. The results are shown in Table 3. In addition, the silicon ingot was cut under the following conditions, and the viscosity stability and processing accuracy of the aqueous cutting agent were evaluated. The results are shown in Table 3.
<切削条件>
切断装置:マルチワイヤーソー
ワイヤー線径:0.14mm
砥粒:炭化ケイ素(信濃電気製錬社製、GC♯1000、平均粒子径11μm)
シリコンインゴット:口径125mm角、長さ90mmの多結晶シリコン
切断ピッチ:0.40mm
切断速度:0.3mm/分
ワイヤー走行速度:660m/分
<Cutting conditions>
Cutting device: Multi-wire saw Wire diameter: 0.14mm
Abrasive grain: Silicon carbide (manufactured by Shinano Denki Smelting Co., GC # 1000, average particle size 11 μm)
Silicon ingot: Polycrystalline silicon with a diameter of 125 mm square and a length of 90 mm Cutting pitch: 0.40 mm
Cutting speed: 0.3 mm / min Wire traveling speed: 660 m / min
なお、各特性の測定は下記のように行った。
《評価方法》
<砥粒の分散安定性>
上記スラリーを作製し、シーラス社製、レーザー散乱回折粒度分布装置シーラス1064を用いて、作製直後及び24時間後の砥粒の平均粒子径を測定し、その粒子径増大割合を計算した。
粒子径増大割合=(24時間後の砥粒の平均粒子径)/(作製直後の砥粒の平均粒子径)
Each characteristic was measured as follows.
"Evaluation method"
<Dispersion stability of abrasive grains>
The slurry was prepared, and the average particle size of the abrasive grains immediately after the production and 24 hours after the production was measured using a laser scattering diffraction particle size distribution device Cirrus 1064 manufactured by Cirrus, and the increase rate of the particle size was calculated.
Particle diameter increase ratio = (average particle diameter of abrasive grains after 24 hours) / (average particle diameter of abrasive grains immediately after production)
〈水性切削剤の粘度安定性〉
シリコンインゴット切断開始前のスラリー粘度及び切断完了後のスラリー粘度をB型粘度計にて測定し、その粘度上昇率を計算した。
<Viscosity stability of water-based cutting agent>
The slurry viscosity before the start of silicon ingot cutting and the slurry viscosity after completion of cutting were measured with a B-type viscometer, and the rate of increase in viscosity was calculated.
<切断後の加工精度>
切断後、ウエハ表面のソーマーク(研削痕)の有無の確認を行なった。
○:ソーマークが見られない
×:ソーマークが見られる
厚さバラつき及び三次元のそり、うねりは、シリコンインゴット切断に際してシリコンインゴットの両端部と中央部から切り出されるウエハを各々3枚、計9枚抜き取り、ウエハ1枚あたり4隅とその間の計8点の厚さを測定し、総計72点のデータから算出した標準偏差を表す。
<Processing accuracy after cutting>
After cutting, the presence or absence of saw marks (grinding marks) on the wafer surface was confirmed.
○: saw mark is not seen ×: saw mark is seen Thickness variation, three-dimensional warpage, and undulation are three wafers cut out from the both ends and the center of the silicon ingot when cutting the silicon ingot, for a total of nine. Measure the thickness of 4 corners per wafer and a total of 8 thicknesses between them, and express the standard deviation calculated from the data of 72 points in total.
[実施例2〜11、比較例1〜7]
実施例1と同様にして表1,2に示される配合物の種類及び配合量(%)で撹拌混合し、水性切削液(M−2〜M−18)を得た。更に実施例1と同様に、SiC砥粒(信濃電気精錬社製、GC♯1000、平均粒子径11μm)を加えて撹拌し、シリコンインゴット切断用スラリーを得た。シリコンインゴット切断用スラリーを用いて、砥粒の分散安定性をスラリー作製直後と24時間静置後の平均粒子径を測定することにより評価した。その結果を表3,4に示す。また、実施例1と同様の条件でシリコンインゴットを切断し、水性切削剤の粘度安定性及び加工精度を評価した。その結果を表3,4に示す。
[Examples 2 to 11, Comparative Examples 1 to 7]
The mixture was stirred and mixed in the same manner as in Example 1 with the types and amounts (%) of the formulations shown in Tables 1 and 2 to obtain aqueous cutting fluids (M-2 to M-18). Further, in the same manner as in Example 1, SiC abrasive grains (manufactured by Shinano Denki Co., Ltd., GC # 1000, average particle size 11 μm) were added and stirred to obtain a slurry for cutting a silicon ingot. Using the slurry for cutting a silicon ingot, the dispersion stability of the abrasive grains was evaluated by measuring the average particle size immediately after slurry preparation and after standing for 24 hours. The results are shown in Tables 3 and 4. Further, the silicon ingot was cut under the same conditions as in Example 1, and the viscosity stability and processing accuracy of the aqueous cutting agent were evaluated. The results are shown in Tables 3 and 4.
蒸気圧の数値(mmHg)及び水への溶解度(20℃)
・ジエチレングリコール <0.01mmHg、任意の割合で可溶(5%以上)
・PEG200 <0.001mmHg、任意の割合で可溶(5%以上)
・PEG400 <0.001mmHg、任意の割合で可溶(5%以上)
Numerical value of vapor pressure (mmHg) and solubility in water (20 ° C)
・ Diethylene glycol <0.01mmHg, soluble in any proportion (more than 5%)
・ PEG200 <0.001 mmHg, soluble in any proportion (more than 5%)
・ PEG400 <0.001mmHg, soluble in any proportion (more than 5%)
アセチレングリコールA:2,5,8,11−テトラメチル−6−ドデシン−5,8−ジオールのエチレンオキサイド付加体、エチレンオキサイド付加モル数4
アセチレングリコールB:2,4,7,9−テトラメチル−5−ドデシン−4,7−ジオール
ノイゲンTDS−30:第一工業製薬社製商品名、RO(CH2CH2)nOH、R:炭素数13、n=3
ノイゲンTDS−80:第一工業製薬社製商品名、RO(CH2CH2)nOH、R:炭素数13、n=8
SMA 1000:川原油化社製商品名、スチレン・無水マレイン酸共重合体アルキルエステル・アンモニウム塩、重量平均分子量5,500
SMA 1440−20:川原油化社製商品名、スチレン・無水マレイン酸共重合体アルキルエステル・アンモニウム塩、重量平均分子量7,000
PEG200:三洋化成工業社製商品名、ポリエチレングリコール、重量平均分子量200
PEG400:三洋化成工業社製商品名、ポリエチレングリコール、重量平均分子量400
Acetylene glycol A: 2,5,8,11-tetramethyl-6-dodecyne-5,8-diol ethylene oxide adduct, ethylene oxide addition mole number 4
Acetylene glycol B: 2,4,7,9-tetramethyl-5-dodecin-4,7-diol Neugen TDS-30: trade name, RO (CH 2 CH 2 ) n OH, R, manufactured by Daiichi Kogyo Seiyaku : 13 carbon atoms, n = 3
Neugen TDS-80: trade name, manufactured by Daiichi Kogyo Seiyaku Co., Ltd., RO (CH 2 CH 2 ) n OH, R: carbon number 13, n = 8
SMA 1000: Trade name made by Kawa Crude Chemical Co., Ltd., styrene / maleic anhydride copolymer alkyl ester / ammonium salt, weight average molecular weight 5,500
SMA 1440-20: trade name of Kawa Crude Chemical Co., Ltd., styrene / maleic anhydride copolymer alkyl ester / ammonium salt, weight average molecular weight 7,000
PEG200: trade name, manufactured by Sanyo Chemical Industries, polyethylene glycol, weight average molecular weight 200
PEG400: Sanyo Chemical Industries trade name, polyethylene glycol, weight average molecular weight 400
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JP5780423B2 (en) * | 2011-07-25 | 2015-09-16 | 日油株式会社 | Water-based cutting fluid and water-based cutting agent |
CN102876433A (en) * | 2012-09-27 | 2013-01-16 | 铜陵市琨鹏光电科技有限公司 | Crystal cutting fluid |
JP6204029B2 (en) * | 2013-03-06 | 2017-09-27 | 出光興産株式会社 | Aqueous processing fluid |
JP6009378B2 (en) * | 2013-03-06 | 2016-10-19 | 出光興産株式会社 | Water-soluble metalworking fluid and metalworking coolant |
MY177479A (en) * | 2013-04-05 | 2020-09-16 | Palace Chemical Co Ltd | Water-soluble cutting fluid for fixed abrasive grain wire saw, method for cutting ingot using cutting fluid, and substrate for electronic material obtained by cutting method |
CN103351933A (en) * | 2013-06-19 | 2013-10-16 | 天长市润达金属防锈助剂有限公司 | Water-based cutting fluid and cutting paste |
CN103421593B (en) * | 2013-06-20 | 2015-07-22 | 天长市润达金属防锈助剂有限公司 | Aqueous cutting fluid and aqueous cutting pulp |
CN103421592B (en) * | 2013-06-20 | 2016-05-04 | 天长市润达金属防锈助剂有限公司 | A kind of cutting fluid and cutting slurry |
JP6283552B2 (en) * | 2014-03-28 | 2018-02-21 | 出光興産株式会社 | Water-soluble metalworking oil and coolant for metalworking |
JP6445247B2 (en) * | 2014-03-28 | 2018-12-26 | 出光興産株式会社 | Water-soluble metalworking oil and coolant for metalworking |
CN104498169A (en) * | 2014-12-31 | 2015-04-08 | 镇江市港南电子有限公司 | High-quality silicon chip cutting fluid |
JP6232480B2 (en) * | 2016-08-31 | 2017-11-15 | 出光興産株式会社 | Aqueous processing fluid |
CN113337326B (en) * | 2020-06-10 | 2023-05-23 | 沙索(中国)化学有限公司 | Aqueous composition comprising a water-soluble glycerol-based polyalkylene glycol and use thereof |
KR20230161470A (en) * | 2021-03-29 | 2023-11-27 | 이데미쓰 고산 가부시키가이샤 | water-based processing fluid |
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JP2000327838A (en) | 1999-05-18 | 2000-11-28 | Super Silicon Kenkyusho:Kk | Aqueous grinding liquid for wire saw or handsaw |
JP3971075B2 (en) * | 2000-01-18 | 2007-09-05 | 株式会社Tmp | Finishing lapping oil composition |
US20030181340A1 (en) * | 2000-09-22 | 2003-09-25 | Botz Frank K. | Lubricants suitable for hydroforming and other metal manipulating applications |
TW575660B (en) * | 2001-09-07 | 2004-02-11 | Dai Ichi Kogyo Seiyaku Co Ltd | Nonflammable water-based cutting fluid composition and nonflammable water-based cutting fluid |
JP4133090B2 (en) * | 2002-08-02 | 2008-08-13 | 日信化学工業株式会社 | Dispersant composition |
US6641986B1 (en) * | 2002-08-12 | 2003-11-04 | Air Products And Chemicals, Inc. | Acetylenic diol surfactant solutions and methods of using same |
JP2006096951A (en) * | 2004-09-30 | 2006-04-13 | Kyodo Yushi Co Ltd | Water-soluble machining oil, slurry, and machining method |
JP4566045B2 (en) | 2005-03-29 | 2010-10-20 | ユシロ化学工業株式会社 | Water-based abrasive dispersion medium composition |
JP4481898B2 (en) * | 2005-07-25 | 2010-06-16 | ユシロ化学工業株式会社 | Water-based abrasive dispersion medium composition |
JP4984032B2 (en) * | 2006-04-03 | 2012-07-25 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
JP4974150B2 (en) * | 2007-02-19 | 2012-07-11 | 株式会社興人 | Water-soluble processing oil |
JPWO2009028256A1 (en) * | 2007-08-31 | 2010-11-25 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion preparation set and chemical mechanical polishing aqueous dispersion preparation method |
WO2009058463A1 (en) * | 2007-10-31 | 2009-05-07 | 3M Innovative Properties Company | Composition, method and process for polishing a wafer |
US8960177B2 (en) * | 2008-12-20 | 2015-02-24 | Cabot Microelectronics Corporation | Wiresaw cutting method |
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