WO2009016870A1 - 加熱処理装置および加熱処理方法 - Google Patents

加熱処理装置および加熱処理方法 Download PDF

Info

Publication number
WO2009016870A1
WO2009016870A1 PCT/JP2008/058806 JP2008058806W WO2009016870A1 WO 2009016870 A1 WO2009016870 A1 WO 2009016870A1 JP 2008058806 W JP2008058806 W JP 2008058806W WO 2009016870 A1 WO2009016870 A1 WO 2009016870A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat treatment
lower electrode
treatment apparatus
treatment method
electrode
Prior art date
Application number
PCT/JP2008/058806
Other languages
English (en)
French (fr)
Inventor
Kazuhiko Iwasa
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2009016870A1 publication Critical patent/WO2009016870A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)

Abstract

　下部電極を上部電極と平行に維持することができる加熱処理装置および加熱処理方法を提供すること。 　真空チャンバと１１、この真空チャンバ１１の内部において上下動可能な下部電極１３と、この下部電極１３を支持するとともにこの下部電極１３を上下動させる支持部材１５と、下部電極１３が上下動の略下端の位置において下部電極１３の下面の所定の位置（たとえば下部電極１３が下方に撓み変形が生じやすい位置）に当接して前記下部電極を支持する凸状の部材１１１とを備える。
PCT/JP2008/058806 2007-08-01 2008-05-14 加熱処理装置および加熱処理方法 WO2009016870A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007200576 2007-08-01
JP2007-200576 2007-08-01

Publications (1)

Publication Number Publication Date
WO2009016870A1 true WO2009016870A1 (ja) 2009-02-05

Family

ID=40304110

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058806 WO2009016870A1 (ja) 2007-08-01 2008-05-14 加熱処理装置および加熱処理方法

Country Status (1)

Country Link
WO (1) WO2009016870A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233291A (ja) * 1998-02-17 1999-08-27 Fron Tec:Kk プラズマ処理装置
JP2007043170A (ja) * 2005-08-02 2007-02-15 Applied Materials Inc 基板支持体の加熱及び冷却

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233291A (ja) * 1998-02-17 1999-08-27 Fron Tec:Kk プラズマ処理装置
JP2007043170A (ja) * 2005-08-02 2007-02-15 Applied Materials Inc 基板支持体の加熱及び冷却

Similar Documents

Publication Publication Date Title
TW200734076A (en) Apparatus and method for cleaning a substrate terminal area
WO2009060890A1 (ja) 貼合せ基板製造装置および貼合せ基板製造方法
WO2009063906A1 (ja) 貼合せ基板製造装置および貼合せ基板製造方法
PL2244960T3 (pl) Portal umożliwiający zmiany pozycji wielkopowierzchniowych płyt szklanych
WO2007016413A3 (en) Method for aligning and assembling two lens pieces, and a machine to accomplish this task
WO2009024972A3 (en) A continuously height adjustable baby mattress support and apparatus therefor
JP2012072478A5 (ja)
WO2014051391A3 (ko) 선박블록 지지용 지그
WO2008002749A3 (en) Assembly line vehicle body positioning
WO2008120294A1 (ja) 搬送装置
WO2010088338A3 (en) Rapid cooling of a substrate by motion
WO2015109219A3 (en) Automated positive pressure solid phase extraction apparatus and method
WO2009005145A1 (ja) レーザ加工装置、加工制御装置および加工装置
TW200731388A (en) Stripping means and stripping apparatus
WO2008024681A3 (en) Apparatus and methods for handling workpieces in a processing system
WO2008057582A3 (en) Rotary punch
GB2496566A (en) Apparatus and methods for manoeuvring and support of panels
EP2283944A3 (en) Rotary Stamper
EA201491637A1 (ru) Опора для гнутья с шарнирным сочленением
CN103552345A (zh) 贴合装置及贴合方法
WO2009060855A1 (ja) 貼合せ基板製造装置および貼合せ基板製造方法
CN104691077B (zh) 贴合设备
WO2009016870A1 (ja) 加熱処理装置および加熱処理方法
SG144816A1 (en) Apparatus for eliminating wafer warpage
JP2015135903A5 (ja)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08752677

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase

Ref document number: 08752677

Country of ref document: EP

Kind code of ref document: A1