WO2009011338A1 - Cellule solaire - Google Patents

Cellule solaire Download PDF

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Publication number
WO2009011338A1
WO2009011338A1 PCT/JP2008/062707 JP2008062707W WO2009011338A1 WO 2009011338 A1 WO2009011338 A1 WO 2009011338A1 JP 2008062707 W JP2008062707 W JP 2008062707W WO 2009011338 A1 WO2009011338 A1 WO 2009011338A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
well
barrier
layers
multiquantum
Prior art date
Application number
PCT/JP2008/062707
Other languages
English (en)
Japanese (ja)
Inventor
Yuki Matsui
Akihiro Funamoto
Shigeru Aoyama
Original Assignee
Omron Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corporation filed Critical Omron Corporation
Publication of WO2009011338A1 publication Critical patent/WO2009011338A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une couche de puits multiquantique (28) qui est constituée par empilement de façon alternée d'une pluralité de couches barrières (33) et d'une pluralité de couches de puits (34), dont chacune a une bande interdite inférieure à celle de la couche barrière (33). Une troisième couche semi-conductrice (27), qui a une bande interdite inférieure à celle de la couche barrière (33) et une épaisseur supérieure à celle de la couche de puits (34), est disposée adjacente à la couche barrière (33) positionnée au niveau de l'extrémité sur le côté opposé à la surface de réception de lumière. La lumière entrée dans la couche de puits multiquantique (28) est absorbée par les couches barrières (33) et les couches de puits (34). De plus, la lumière amenée à passer à travers la structure de puits multiquantique (28) est en outre absorbée par la troisième couche semi-conductrice (27).
PCT/JP2008/062707 2007-07-18 2008-07-14 Cellule solaire WO2009011338A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007187302A JP2009026887A (ja) 2007-07-18 2007-07-18 太陽電池
JP2007-187302 2007-07-18

Publications (1)

Publication Number Publication Date
WO2009011338A1 true WO2009011338A1 (fr) 2009-01-22

Family

ID=40259671

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062707 WO2009011338A1 (fr) 2007-07-18 2008-07-14 Cellule solaire

Country Status (2)

Country Link
JP (1) JP2009026887A (fr)
WO (1) WO2009011338A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013128661A1 (fr) * 2012-02-28 2013-09-06 トヨタ自動車株式会社 Élément photovoltaïque et procédé de fabrication de celui-ci

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5382696B2 (ja) * 2009-03-05 2014-01-08 独立行政法人物質・材料研究機構 半導体光素子と半導体太陽電池
JP2010258401A (ja) * 2009-03-30 2010-11-11 Saito Research Institute Of Technology Co Ltd 光学的および電磁気学的効果補助層の制御手法
US8772627B2 (en) 2009-08-07 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP2011100915A (ja) * 2009-11-09 2011-05-19 Toyota Motor Corp 光電変換素子
JP2011187646A (ja) * 2010-03-08 2011-09-22 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
JP5630304B2 (ja) * 2011-02-09 2014-11-26 トヨタ自動車株式会社 光電変換素子
US10170652B2 (en) * 2011-03-22 2019-01-01 The Boeing Company Metamorphic solar cell having improved current generation
KR101241647B1 (ko) 2011-06-01 2013-03-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181476A (ja) * 1986-02-05 1987-08-08 Toshiba Corp 半導体装置
JPH06104464A (ja) * 1990-01-19 1994-04-15 Solarex Corp ｐｉｎアモルファスシリコン光電池に於ける広帯域ギャップｎ層を使用した短絡電流の強化
JPH07297425A (ja) * 1994-04-20 1995-11-10 Oki Electric Ind Co Ltd 太陽電池
JPH08172205A (ja) * 1994-12-20 1996-07-02 Fuji Electric Co Ltd ダイオード
JP2002141531A (ja) * 2000-11-01 2002-05-17 Sharp Corp 太陽電池およびその製造方法
JP2004335733A (ja) * 2003-05-07 2004-11-25 National Institute Of Advanced Industrial & Technology 薄膜太陽電池

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181476A (ja) * 1986-02-05 1987-08-08 Toshiba Corp 半導体装置
JPH06104464A (ja) * 1990-01-19 1994-04-15 Solarex Corp ｐｉｎアモルファスシリコン光電池に於ける広帯域ギャップｎ層を使用した短絡電流の強化
JPH07297425A (ja) * 1994-04-20 1995-11-10 Oki Electric Ind Co Ltd 太陽電池
JPH08172205A (ja) * 1994-12-20 1996-07-02 Fuji Electric Co Ltd ダイオード
JP2002141531A (ja) * 2000-11-01 2002-05-17 Sharp Corp 太陽電池およびその製造方法
JP2004335733A (ja) * 2003-05-07 2004-11-25 National Institute Of Advanced Industrial & Technology 薄膜太陽電池

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013128661A1 (fr) * 2012-02-28 2013-09-06 トヨタ自動車株式会社 Élément photovoltaïque et procédé de fabrication de celui-ci
JPWO2013128661A1 (ja) * 2012-02-28 2015-07-30 トヨタ自動車株式会社 光起電力素子及びその製造方法
US10483422B2 (en) 2012-02-28 2019-11-19 Toyota Jidosha Kabushiki Kaisha Photovoltaic device and method for manufacturing the same

Also Published As

Publication number Publication date
JP2009026887A (ja) 2009-02-05

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