WO2009011338A1 - Solar cell - Google Patents

Solar cell Download PDF

Info

Publication number
WO2009011338A1
WO2009011338A1 PCT/JP2008/062707 JP2008062707W WO2009011338A1 WO 2009011338 A1 WO2009011338 A1 WO 2009011338A1 JP 2008062707 W JP2008062707 W JP 2008062707W WO 2009011338 A1 WO2009011338 A1 WO 2009011338A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
well
barrier
layers
multiquantum
Prior art date
Application number
PCT/JP2008/062707
Other languages
French (fr)
Japanese (ja)
Inventor
Yuki Matsui
Akihiro Funamoto
Shigeru Aoyama
Original Assignee
Omron Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corporation filed Critical Omron Corporation
Publication of WO2009011338A1 publication Critical patent/WO2009011338A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A multiquantum well layer (28) is constituted by alternately stacking a plurality of barrier layers (33) and a plurality of well layers (34) each of which has a band gap smaller than that of the barrier layer (33). A third semiconductor layer (27), which has a band gap smaller than that of the barrier layer (33) and has a thickness larger than that of the well layer (34), is arranged adjacent to the barrier layer (33) positioned at the end on the side opposite to the light receiving surface. Light entered the multiquantum well layer (28) is absorbed by the barrier layers (33) and the well layers (34). Furthermore, light passed through the multiquantum well structure (28) is further absorbed by the third semiconductor layer (27).
PCT/JP2008/062707 2007-07-18 2008-07-14 Solar cell WO2009011338A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007187302A JP2009026887A (en) 2007-07-18 2007-07-18 Solar cell
JP2007-187302 2007-07-18

Publications (1)

Publication Number Publication Date
WO2009011338A1 true WO2009011338A1 (en) 2009-01-22

Family

ID=40259671

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062707 WO2009011338A1 (en) 2007-07-18 2008-07-14 Solar cell

Country Status (2)

Country Link
JP (1) JP2009026887A (en)
WO (1) WO2009011338A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013128661A1 (en) * 2012-02-28 2013-09-06 トヨタ自動車株式会社 Photovoltaic element and method for manufacturing same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5382696B2 (en) * 2009-03-05 2014-01-08 独立行政法人物質・材料研究機構 Semiconductor optical device and semiconductor solar cell
JP2010258401A (en) * 2009-03-30 2010-11-11 Saito Research Institute Of Technology Co Ltd Controlling method of optical and electromagnetic effect assisting layer
US8772627B2 (en) 2009-08-07 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP2011100915A (en) * 2009-11-09 2011-05-19 Toyota Motor Corp Photoelectric conversion element
JP2011187646A (en) * 2010-03-08 2011-09-22 Seiko Epson Corp Optical converter and electronic apparatus including the same
JP5630304B2 (en) * 2011-02-09 2014-11-26 トヨタ自動車株式会社 Photoelectric conversion element
US10170652B2 (en) * 2011-03-22 2019-01-01 The Boeing Company Metamorphic solar cell having improved current generation
KR101241647B1 (en) 2011-06-01 2013-03-11 엘지이노텍 주식회사 Solar cell apparatus and method of fabricating the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181476A (en) * 1986-02-05 1987-08-08 Toshiba Corp Semiconductor device
JPH06104464A (en) * 1990-01-19 1994-04-15 Solarex Corp Strengthening of short-circuit current using wide-band gap n-layer in pin amorphous silicon photoelectric cell
JPH07297425A (en) * 1994-04-20 1995-11-10 Oki Electric Ind Co Ltd Solar battery
JPH08172205A (en) * 1994-12-20 1996-07-02 Fuji Electric Co Ltd Diode
JP2002141531A (en) * 2000-11-01 2002-05-17 Sharp Corp Solar cell and manufacturing method thereof
JP2004335733A (en) * 2003-05-07 2004-11-25 National Institute Of Advanced Industrial & Technology Thin film solar cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181476A (en) * 1986-02-05 1987-08-08 Toshiba Corp Semiconductor device
JPH06104464A (en) * 1990-01-19 1994-04-15 Solarex Corp Strengthening of short-circuit current using wide-band gap n-layer in pin amorphous silicon photoelectric cell
JPH07297425A (en) * 1994-04-20 1995-11-10 Oki Electric Ind Co Ltd Solar battery
JPH08172205A (en) * 1994-12-20 1996-07-02 Fuji Electric Co Ltd Diode
JP2002141531A (en) * 2000-11-01 2002-05-17 Sharp Corp Solar cell and manufacturing method thereof
JP2004335733A (en) * 2003-05-07 2004-11-25 National Institute Of Advanced Industrial & Technology Thin film solar cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013128661A1 (en) * 2012-02-28 2013-09-06 トヨタ自動車株式会社 Photovoltaic element and method for manufacturing same
JPWO2013128661A1 (en) * 2012-02-28 2015-07-30 トヨタ自動車株式会社 Photovoltaic element and manufacturing method thereof
US10483422B2 (en) 2012-02-28 2019-11-19 Toyota Jidosha Kabushiki Kaisha Photovoltaic device and method for manufacturing the same

Also Published As

Publication number Publication date
JP2009026887A (en) 2009-02-05

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