WO2010067958A3 - Batterie solaire à substrat réutilisable et procédé de fabrication associé - Google Patents

Batterie solaire à substrat réutilisable et procédé de fabrication associé Download PDF

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Publication number
WO2010067958A3
WO2010067958A3 PCT/KR2009/006234 KR2009006234W WO2010067958A3 WO 2010067958 A3 WO2010067958 A3 WO 2010067958A3 KR 2009006234 W KR2009006234 W KR 2009006234W WO 2010067958 A3 WO2010067958 A3 WO 2010067958A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar battery
manufacturing
conductor layer
reusable substrate
nanostructures
Prior art date
Application number
PCT/KR2009/006234
Other languages
English (en)
Korean (ko)
Other versions
WO2010067958A2 (fr
Inventor
이정호
엄한돈
지상원
박광태
서홍석
정진영
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080125440A external-priority patent/KR101039208B1/ko
Priority claimed from KR1020090101966A external-priority patent/KR101542249B1/ko
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to US13/139,019 priority Critical patent/US9136404B2/en
Publication of WO2010067958A2 publication Critical patent/WO2010067958A2/fr
Publication of WO2010067958A3 publication Critical patent/WO2010067958A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une batterie solaire à substrat réutilisable ainsi que son procédé de production associé. La batterie solaire comprend: i) une pluralité de nanostructures espacées les unes des autres et placées dans le même sens, ii) une première couche conductrice qui couvre une extrémité d'une ou plusieurs nanostructures de la pluralité de nanostructures, iii) une seconde couche conductrice espacée de la première couche, et qui couvre l'autre extrémité de la nanostructure, et iv) une couche diélectrique interposée entre la première couche conductrice et la seconde couche conductrice.
PCT/KR2009/006234 2008-12-10 2009-10-27 Batterie solaire à substrat réutilisable et procédé de fabrication associé WO2010067958A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/139,019 US9136404B2 (en) 2008-12-10 2009-10-27 Solar cell capable of recycling a substrate and method for manufacturing the same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020080125440A KR101039208B1 (ko) 2008-12-10 2008-12-10 반도체 막대를 구비하는 태양 전지, 이의 제조방법, 및 태양 전지 - 열전 소자 통합 모듈
KR10-2008-0125440 2008-12-10
KR10-2009-0056909 2009-06-25
KR20090056909 2009-06-25
KR1020090101966A KR101542249B1 (ko) 2009-06-25 2009-10-26 기판의 재사용이 가능한 태양 전지
KR10-2009-0101966 2009-10-26

Publications (2)

Publication Number Publication Date
WO2010067958A2 WO2010067958A2 (fr) 2010-06-17
WO2010067958A3 true WO2010067958A3 (fr) 2010-08-12

Family

ID=42243152

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006234 WO2010067958A2 (fr) 2008-12-10 2009-10-27 Batterie solaire à substrat réutilisable et procédé de fabrication associé

Country Status (1)

Country Link
WO (1) WO2010067958A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US20160020347A1 (en) * 2014-07-18 2016-01-21 Zena Technologies, Inc. Bifacial photovoltaic devices
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
WO2013130027A1 (fr) * 2011-05-20 2013-09-06 Zena Technologies, Inc. Propriétés d'absorption et de filtrage de lumière de nanofils semi-conducteurs orientés verticalement
JP2013016787A (ja) * 2011-06-08 2013-01-24 Nissan Motor Co Ltd 太陽電池およびその製造方法
KR101316375B1 (ko) 2011-08-19 2013-10-08 포항공과대학교 산학협력단 태양전지 및 이의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050087247A (ko) * 2004-02-26 2005-08-31 삼성에스디아이 주식회사 유기 태양전지 및 그 제조방법
KR20060074233A (ko) * 2004-12-27 2006-07-03 삼성전자주식회사 광전셀 및 그 제조방법
KR100809248B1 (ko) * 2007-03-14 2008-02-29 삼성전기주식회사 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050087247A (ko) * 2004-02-26 2005-08-31 삼성에스디아이 주식회사 유기 태양전지 및 그 제조방법
KR20060074233A (ko) * 2004-12-27 2006-07-03 삼성전자주식회사 광전셀 및 그 제조방법
KR100809248B1 (ko) * 2007-03-14 2008-02-29 삼성전기주식회사 반도체 이종구조 나노선을 이용한 광기전력 소자 및 그제조방법

Also Published As

Publication number Publication date
WO2010067958A2 (fr) 2010-06-17

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