WO2008157345A3 - Compositions et procédés de récupération de plaquette - Google Patents

Compositions et procédés de récupération de plaquette Download PDF

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Publication number
WO2008157345A3
WO2008157345A3 PCT/US2008/066906 US2008066906W WO2008157345A3 WO 2008157345 A3 WO2008157345 A3 WO 2008157345A3 US 2008066906 W US2008066906 W US 2008066906W WO 2008157345 A3 WO2008157345 A3 WO 2008157345A3
Authority
WO
WIPO (PCT)
Prior art keywords
compositions
methods
removal
wafer reclamation
processes
Prior art date
Application number
PCT/US2008/066906
Other languages
English (en)
Other versions
WO2008157345A2 (fr
Inventor
Pamela Visintin
Ping Jiang
Michael Korzenski
Mackenzie King
Jianwen Han
Monica Hilgarth
Jun Liu
Renjie Zhou
David Minsek
Original Assignee
Advanced Tech Materials
Pamela Visintin
Ping Jiang
Michael Korzenski
Mackenzie King
Jianwen Han
Monica Hilgarth
Jun Liu
Renjie Zhou
David Minsek
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials, Pamela Visintin, Ping Jiang, Michael Korzenski, Mackenzie King, Jianwen Han, Monica Hilgarth, Jun Liu, Renjie Zhou, David Minsek filed Critical Advanced Tech Materials
Publication of WO2008157345A2 publication Critical patent/WO2008157345A2/fr
Publication of WO2008157345A3 publication Critical patent/WO2008157345A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02079—Cleaning for reclaiming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

L'invention concerne des compositions et procédés d'enlèvement destinés à enlever au moins une couche de matériau à partir d'une structure du dispositif micro-électronique rejetée ayant celle-ci dessus. La composition d'enlèvement comprend de préférence de l'acide fluorhydrique. La composition obtient un enlèvement important d'huile ou de matériau(x) devant être enlevé(s) sans détériorer les couches devant être retenues, pour récupérer, réusiner, recycler et/ou réutiliser la structure. Les procédés comprennent la surveillance et la modification des compositions.
PCT/US2008/066906 2007-06-13 2008-06-13 Compositions et procédés de récupération de plaquette WO2008157345A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US94373307P 2007-06-13 2007-06-13
US94373807P 2007-06-13 2007-06-13
US60/943,738 2007-06-13
US60/943,733 2007-06-13

Publications (2)

Publication Number Publication Date
WO2008157345A2 WO2008157345A2 (fr) 2008-12-24
WO2008157345A3 true WO2008157345A3 (fr) 2009-04-16

Family

ID=40156915

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/066906 WO2008157345A2 (fr) 2007-06-13 2008-06-13 Compositions et procédés de récupération de plaquette

Country Status (2)

Country Link
TW (1) TW200918664A (fr)
WO (1) WO2008157345A2 (fr)

Families Citing this family (35)

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JP2010524208A (ja) * 2007-03-31 2010-07-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド ウエハ再生のために材料を剥離する方法
US20090229629A1 (en) * 2008-03-14 2009-09-17 Air Products And Chemicals, Inc. Stripper For Copper/Low k BEOL Clean
US8366954B2 (en) 2009-01-13 2013-02-05 Avantor Performance Materials, Bv Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
MX2011007413A (es) * 2009-01-14 2011-07-21 Avantor Performance Materials B V Solucion para aumentar la resistencia de la hoja de lamina y/o elevar la densidad de energia de la celda fotovoltaica.
SG187551A1 (en) 2010-07-16 2013-03-28 Advanced Tech Materials Aqueous cleaner for the removal of post-etch residues
SG10201508015RA (en) 2010-10-06 2015-10-29 Entegris Inc Composition and process for selectively etching metal nitrides
DE102011000322A1 (de) * 2011-01-25 2012-07-26 saperatec GmbH Trennmedium, Verfahren und Anlage zum Trennen von Mehrschichtsystemen
US9546321B2 (en) 2011-12-28 2017-01-17 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
EP2814895A4 (fr) 2012-02-15 2015-10-07 Entegris Inc Elimination post-cmp à l'aide de compositions et procédé d'utilisation
WO2013173738A1 (fr) 2012-05-18 2013-11-21 Advanced Technology Materials, Inc. Composition et processus permettant d'arracher un enduit photorésistant d'une surface comprenant du nitrure de titane
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
EP2939263B1 (fr) * 2012-12-31 2022-06-01 Nalco Company Détermination du taux de fluorure d'hydrogène libre dans un agent de gravure à oxydes tamponné
WO2014138064A1 (fr) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions et procédés pour graver sélectivement du nitrure de titane
SG11201509933QA (en) * 2013-06-06 2016-01-28 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
CN105431506A (zh) 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
TWI508996B (zh) * 2013-08-14 2015-11-21 Far Eastern New Century Corp To reduce the color difference with the composition and conjugate polymer guide The method of forming an insulating region and a conductive region by a film and reducing the color difference between the regions
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
JP6707451B2 (ja) 2013-12-11 2020-06-10 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面の残留物を除去するための洗浄配合物
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
WO2015095726A1 (fr) 2013-12-20 2015-06-25 Entegris, Inc. Utilisation d'acides forts non oxydants pour l'élimination de photorésine implantée par des ions
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (fr) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Compositions post-cmp sans amine et leur méthode d'utilisation
WO2015143056A1 (fr) * 2014-03-18 2015-09-24 Specmat, Inc. Procédé et technologie de fabrication pour couches d'oxyde
US10619097B2 (en) 2014-06-30 2020-04-14 Specmat, Inc. Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation
JP6460729B2 (ja) * 2014-10-31 2019-01-30 富士フイルム株式会社 基板処理方法、及び、半導体素子の製造方法
KR102040667B1 (ko) * 2015-03-31 2019-11-27 버슘머트리얼즈 유에스, 엘엘씨 세정 포뮬레이션
CN105388713A (zh) * 2015-12-16 2016-03-09 无锡吉进环保科技有限公司 一种薄膜液晶显示器中的铝膜水系光阻剥离液
CN110249041A (zh) * 2017-02-10 2019-09-17 富士胶片电子材料美国有限公司 清洗制剂
US10889757B2 (en) * 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
US12068464B2 (en) 2018-04-19 2024-08-20 Georgia Tech Research Corporation Systems and methods for recycling electrodes
KR102192954B1 (ko) * 2020-03-26 2020-12-18 동우 화인켐 주식회사 고분자 세정용 조성물
CN112967930B (zh) * 2021-02-07 2023-05-12 西安微电子技术研究所 一种SiC晶圆的金属化层剥离方法
CN115465846B (zh) * 2022-09-13 2023-10-27 宜都兴发化工有限公司 一种多孔磷酸铁的制备方法
EP4424868A1 (fr) 2023-03-01 2024-09-04 LPE S.p.A. Procédé d'élimination de couches de carbure de silicium, et procédé et appareil de nettoyage de composants de réacteur épitaxiaux

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073289A (en) * 1989-11-02 1991-12-17 The Curators Of The University Of Missouri Paint stripper composition having reduced volatility containing decanolactone, n-methylpyrrolidone and butyrolactone and method of use
JPH07283182A (ja) * 1994-04-12 1995-10-27 Nippon Steel Corp 半導体基板の洗浄方法
US6586382B1 (en) * 1998-10-19 2003-07-01 The Procter & Gamble Company Process of bleaching fabrics
US20040224866A1 (en) * 2003-02-19 2004-11-11 Hiroshi Matsunaga Cleaning solution and cleaning process using the solution
US20050049157A1 (en) * 2003-08-29 2005-03-03 Kimberly-Clark Worldwide, Inc. Single phase color change agents
JP2006083376A (ja) * 2004-08-18 2006-03-30 Mitsubishi Gas Chem Co Inc 洗浄液および洗浄法。
US20060183654A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using ionic liquids

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073289A (en) * 1989-11-02 1991-12-17 The Curators Of The University Of Missouri Paint stripper composition having reduced volatility containing decanolactone, n-methylpyrrolidone and butyrolactone and method of use
JPH07283182A (ja) * 1994-04-12 1995-10-27 Nippon Steel Corp 半導体基板の洗浄方法
US6586382B1 (en) * 1998-10-19 2003-07-01 The Procter & Gamble Company Process of bleaching fabrics
US20040224866A1 (en) * 2003-02-19 2004-11-11 Hiroshi Matsunaga Cleaning solution and cleaning process using the solution
US20050049157A1 (en) * 2003-08-29 2005-03-03 Kimberly-Clark Worldwide, Inc. Single phase color change agents
JP2006083376A (ja) * 2004-08-18 2006-03-30 Mitsubishi Gas Chem Co Inc 洗浄液および洗浄法。
US20060183654A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using ionic liquids

Also Published As

Publication number Publication date
WO2008157345A2 (fr) 2008-12-24
TW200918664A (en) 2009-05-01

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