WO2008153120A1 - 白色発光装置及び白色発光装置の形成方法 - Google Patents

白色発光装置及び白色発光装置の形成方法 Download PDF

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Publication number
WO2008153120A1
WO2008153120A1 PCT/JP2008/060830 JP2008060830W WO2008153120A1 WO 2008153120 A1 WO2008153120 A1 WO 2008153120A1 JP 2008060830 W JP2008060830 W JP 2008060830W WO 2008153120 A1 WO2008153120 A1 WO 2008153120A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
white light
emitting device
wavelengths
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060830
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English (en)
French (fr)
Inventor
Hiroaki Ohta
Masayuki Sonobe
Hidemi Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2008153120A1 publication Critical patent/WO2008153120A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

　網膜損傷の程度が低い白色発光装置及び白色発光装置の形成方法を提供する。 　パッケージ２１の凹部にＬＥＤ２０が配置されており、凹部の一定の高さまで、蛍光体２２と封止樹脂で埋められている。蛍光体２２は、ＬＥＤ２０からの発光を受けて、この発光波長よりも長い波長の光を放射する。蛍光体を通って放射される光は、波長３５０ｎｍ～７００ｎｍの範囲内に発光スペクトル成分を有する白色光源になるように形成されている。この白色光源からの放射光のうち、波長３８０ｎｍ～４８０ｎｍの範囲内の少なくとも一部の波長領域における発光スペクトル成分を除去するようにフィルター２３がもうけられる。 　
PCT/JP2008/060830 2007-06-15 2008-06-13 白色発光装置及び白色発光装置の形成方法 Ceased WO2008153120A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007159390A JP2008311532A (ja) 2007-06-15 2007-06-15 白色発光装置及び白色発光装置の形成方法
JP2007-159390 2007-06-15

Publications (1)

Publication Number Publication Date
WO2008153120A1 true WO2008153120A1 (ja) 2008-12-18

Family

ID=40129723

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060830 Ceased WO2008153120A1 (ja) 2007-06-15 2008-06-13 白色発光装置及び白色発光装置の形成方法

Country Status (3)

Country Link
JP (1) JP2008311532A (ja)
TW (1) TW200903870A (ja)
WO (1) WO2008153120A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101937959A (zh) * 2010-08-12 2011-01-05 武汉华灿光电有限公司 带滤光膜的发光二极管及其制造方法
WO2013061942A1 (ja) * 2011-10-24 2013-05-02 株式会社東芝 白色光源およびそれを用いた白色光源システム
WO2013061943A1 (ja) * 2011-10-24 2013-05-02 株式会社東芝 白色光源およびそれを用いた白色光源システム
CN103369278A (zh) * 2012-04-05 2013-10-23 三菱电机株式会社 投射型投影仪
EP2658264A1 (en) * 2012-04-26 2013-10-30 Mitsubishi Electric Corporation Projector
JP2013243129A (ja) * 2012-05-04 2013-12-05 Soraa Inc 改良された光のｌｅｄランプ
US8648350B2 (en) 2009-08-24 2014-02-11 Panasonic Corporation Gallium nitride compound semiconductor light-emitting device
JP2014209617A (ja) * 2013-03-29 2014-11-06 株式会社朝日ラバー Ｌｅｄ照明装置、その製造方法及びｌｅｄ照明方法
US10557595B2 (en) 2009-09-18 2020-02-11 Soraa, Inc. LED lamps with improved quality of light

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US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
WO2013095982A1 (en) 2011-12-19 2013-06-27 Corning Incorporated Uniform white color light diffusing fiber
JP2014022472A (ja) * 2012-07-13 2014-02-03 Sharp Corp 発光装置、照明装置および発光方法
JP6396295B2 (ja) * 2013-06-18 2018-09-26 シャープ株式会社 光源装置および発光装置
WO2015166782A1 (ja) * 2014-04-30 2015-11-05 シャープ株式会社 発光装置
JP5685337B1 (ja) * 2014-05-02 2015-03-18 山田医療照明株式会社 照明装置及び照明装置の製造方法
US10319889B2 (en) 2016-12-27 2019-06-11 Nichia Corporation Light emitting device
FR3062459B1 (fr) * 2017-02-01 2021-03-19 Schneider Electric Ind Sas Dispositif a fonction de signalisation lumineuse
JP7048873B2 (ja) 2017-07-25 2022-04-06 日亜化学工業株式会社 発光装置及び発光装置の製造方法
US10371325B1 (en) 2018-06-25 2019-08-06 Intematix Corporation Full spectrum white light emitting devices
US11887973B2 (en) 2019-07-09 2024-01-30 Intematix Corporation Full spectrum white light emitting devices
KR102746089B1 (ko) 2019-10-23 2024-12-26 삼성전자주식회사 발광장치 및 식물생장용 조명장치

Citations (6)

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JP2000513293A (ja) * 1996-06-13 2000-10-10 ジェンテクス・コーポレーション 発光ダイオードを内蔵する照明器組立体
JP2002095634A (ja) * 2000-09-26 2002-04-02 Fuji Photo Film Co Ltd 内視鏡装置
JP2006186257A (ja) * 2004-12-28 2006-07-13 Sony Corp 半導体発光素子の製造方法、集積型半導体発光装置の製造方法、画像表示装置の製造方法および照明装置の製造方法
JP2007073206A (ja) * 2005-09-02 2007-03-22 Nidec Sankyo Corp Ｌｅｄ光源装置、照明装置及び表示装置
JP2007123731A (ja) * 2005-10-31 2007-05-17 Toshiba Corp 半導体発光素子および半導体発光装置
JP2007149791A (ja) * 2005-11-24 2007-06-14 Univ Meijo 半導体発光素子および半導体発光素子の作成方法

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JPH1125709A (ja) * 1997-06-30 1999-01-29 Mitsubishi Electric Corp 高圧放電灯を用いた自動車用照明装置
EP2463354B1 (en) * 2005-12-08 2017-03-29 National Institute for Materials Science Phosphor, Process for producing the same, and luminescent device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000513293A (ja) * 1996-06-13 2000-10-10 ジェンテクス・コーポレーション 発光ダイオードを内蔵する照明器組立体
JP2002095634A (ja) * 2000-09-26 2002-04-02 Fuji Photo Film Co Ltd 内視鏡装置
JP2006186257A (ja) * 2004-12-28 2006-07-13 Sony Corp 半導体発光素子の製造方法、集積型半導体発光装置の製造方法、画像表示装置の製造方法および照明装置の製造方法
JP2007073206A (ja) * 2005-09-02 2007-03-22 Nidec Sankyo Corp Ｌｅｄ光源装置、照明装置及び表示装置
JP2007123731A (ja) * 2005-10-31 2007-05-17 Toshiba Corp 半導体発光素子および半導体発光装置
JP2007149791A (ja) * 2005-11-24 2007-06-14 Univ Meijo 半導体発光素子および半導体発光素子の作成方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648350B2 (en) 2009-08-24 2014-02-11 Panasonic Corporation Gallium nitride compound semiconductor light-emitting device
US11662067B2 (en) 2009-09-18 2023-05-30 Korrus, Inc. LED lamps with improved quality of light
US10557595B2 (en) 2009-09-18 2020-02-11 Soraa, Inc. LED lamps with improved quality of light
US11105473B2 (en) 2009-09-18 2021-08-31 EcoSense Lighting, Inc. LED lamps with improved quality of light
CN101937959A (zh) * 2010-08-12 2011-01-05 武汉华灿光电有限公司 带滤光膜的发光二极管及其制造方法
JPWO2013061943A1 (ja) * 2011-10-24 2015-04-02 株式会社東芝 白色光源およびそれを用いた白色光源システム
CN104025322A (zh) * 2011-10-24 2014-09-03 株式会社东芝 白光源和包括所述白光源的白光源系统
WO2013061943A1 (ja) * 2011-10-24 2013-05-02 株式会社東芝 白色光源およびそれを用いた白色光源システム
US9551467B2 (en) 2011-10-24 2017-01-24 Kabushiki Kaisha Toshiba White light source and white light source system including the same
JPWO2013061942A1 (ja) * 2011-10-24 2015-04-02 株式会社東芝 白色光源およびそれを用いた白色光源システム
WO2013061942A1 (ja) * 2011-10-24 2013-05-02 株式会社東芝 白色光源およびそれを用いた白色光源システム
US9082939B2 (en) 2011-10-24 2015-07-14 Kabushiki Kaisha Toshiba White light source and white light source system including the same
CN103369278A (zh) * 2012-04-05 2013-10-23 三菱电机株式会社 投射型投影仪
EP2658264A1 (en) * 2012-04-26 2013-10-30 Mitsubishi Electric Corporation Projector
US9039199B2 (en) 2012-04-26 2015-05-26 Mitsubishi Electric Corporation Projector having blue light alleviating part
JP2017084795A (ja) * 2012-05-04 2017-05-18 ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． 改良された光のｌｅｄランプ
JP2013243129A (ja) * 2012-05-04 2013-12-05 Soraa Inc 改良された光のｌｅｄランプ
JP2014209617A (ja) * 2013-03-29 2014-11-06 株式会社朝日ラバー Ｌｅｄ照明装置、その製造方法及びｌｅｄ照明方法

Also Published As

Publication number Publication date
JP2008311532A (ja) 2008-12-25
TW200903870A (en) 2009-01-16

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