WO2008146608A1 - 気化装置、及び、気化装置を備えた成膜装置 - Google Patents

気化装置、及び、気化装置を備えた成膜装置 Download PDF

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Publication number
WO2008146608A1
WO2008146608A1 PCT/JP2008/058917 JP2008058917W WO2008146608A1 WO 2008146608 A1 WO2008146608 A1 WO 2008146608A1 JP 2008058917 W JP2008058917 W JP 2008058917W WO 2008146608 A1 WO2008146608 A1 WO 2008146608A1
Authority
WO
WIPO (PCT)
Prior art keywords
vaporizing
gas
apparatuses
film forming
mocvd film
Prior art date
Application number
PCT/JP2008/058917
Other languages
English (en)
French (fr)
Inventor
Masayuki Toda
Masaki Kusuhara
Masaru Umeda
Mitsuru Fukagawa
Original Assignee
Kabushiki Kaisha Watanabe Shoko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Watanabe Shoko filed Critical Kabushiki Kaisha Watanabe Shoko
Priority to US12/601,314 priority Critical patent/US8486196B2/en
Priority to EP08752777.6A priority patent/EP2154711B1/en
Publication of WO2008146608A1 publication Critical patent/WO2008146608A1/ja
Priority to US13/913,981 priority patent/US9644264B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　MOCVD膜堆積装置に用いられる気化装置は、複数のガス通路が上方向からガスを導入する構造であったため、噴出ノズルの位置合わせが困難で、気化部に噴出する原料溶液を混合したキャリアガスの圧力と流量を正確に制御できず、MOCVD膜の組成の高精度制御が困難であった。 　複数のガス通路を平面円盤型基板上に配置することにした。このことにより、噴出ノズルの正確な位置合わせが容易になり、MOCVD膜の組成を高い精度で制御できるようになった。  
PCT/JP2008/058917 2007-05-23 2008-05-15 気化装置、及び、気化装置を備えた成膜装置 WO2008146608A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/601,314 US8486196B2 (en) 2007-05-23 2008-05-15 Vaporizing apparatus and film forming apparatus provided with vaporizing apparatus
EP08752777.6A EP2154711B1 (en) 2007-05-23 2008-05-15 Vaporizing apparatus and film forming apparatus provided with vaporizing apparatus
US13/913,981 US9644264B2 (en) 2007-05-23 2013-06-10 Evaporation method and film deposition method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-136872 2007-05-23
JP2007136872A JP5427344B2 (ja) 2007-05-23 2007-05-23 気化装置、及び、気化装置を備えた成膜装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/601,314 A-371-Of-International US8486196B2 (en) 2007-05-23 2008-05-15 Vaporizing apparatus and film forming apparatus provided with vaporizing apparatus
US13/913,981 Division US9644264B2 (en) 2007-05-23 2013-06-10 Evaporation method and film deposition method

Publications (1)

Publication Number Publication Date
WO2008146608A1 true WO2008146608A1 (ja) 2008-12-04

Family

ID=40074874

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058917 WO2008146608A1 (ja) 2007-05-23 2008-05-15 気化装置、及び、気化装置を備えた成膜装置

Country Status (4)

Country Link
US (2) US8486196B2 (ja)
EP (1) EP2154711B1 (ja)
JP (1) JP5427344B2 (ja)
WO (1) WO2008146608A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6013917B2 (ja) * 2010-12-21 2016-10-25 株式会社渡辺商行 気化器及び気化方法
US10557197B2 (en) 2014-10-17 2020-02-11 Lam Research Corporation Monolithic gas distribution manifold and various construction techniques and use cases therefor
WO2017081924A1 (ja) * 2015-11-10 2017-05-18 東京エレクトロン株式会社 気化器、成膜装置及び温度制御方法
US10215317B2 (en) 2016-01-15 2019-02-26 Lam Research Corporation Additively manufactured gas distribution manifold
TWI633585B (zh) * 2017-03-31 2018-08-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器與頂板之組合及成膜裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004079806A1 (ja) * 2003-03-07 2004-09-16 Kabushiki Kaisha Watanabe Shoko 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
JP2005045170A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd ガス反応装置
JP2006108230A (ja) * 2004-10-01 2006-04-20 Utec:Kk Ｃｖｄ用気化器、溶液気化式ｃｖｄ装置及びｃｖｄ用気化方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958510A (en) * 1996-01-08 1999-09-28 Applied Materials, Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
US6086711A (en) * 1997-10-06 2000-07-11 Nisene Technology Group Vapor generation system and process
JP3909792B2 (ja) * 1999-08-20 2007-04-25 パイオニア株式会社 化学気相成長法における原料供給装置及び原料供給方法
FR2800754B1 (fr) 1999-11-08 2003-05-09 Joint Industrial Processors For Electronics Dispositif evaporateur d'une installation de depot chimique en phase vapeur
JP2002252219A (ja) 2001-02-26 2002-09-06 Tokyo Electron Ltd 成膜装置及び成膜方法
DE60204706T2 (de) * 2001-02-28 2006-05-18 Porter Instrument Co., Inc. Verdampfer
JP2003226976A (ja) 2002-02-04 2003-08-15 Tokura Kogyo Kk ガスミキシング装置
US20060037539A1 (en) * 2002-05-29 2006-02-23 Masayuki Toda Vaporizer, various apparatuses including the same and method of vaporization
JP4334968B2 (ja) * 2003-10-01 2009-09-30 東京エレクトロン株式会社 成膜装置
US7846256B2 (en) * 2007-02-23 2010-12-07 Tokyo Electron Limited Ampule tray for and method of precursor surface area

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004079806A1 (ja) * 2003-03-07 2004-09-16 Kabushiki Kaisha Watanabe Shoko 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
JP2005045170A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd ガス反応装置
JP2006108230A (ja) * 2004-10-01 2006-04-20 Utec:Kk Ｃｖｄ用気化器、溶液気化式ｃｖｄ装置及びｃｖｄ用気化方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2154711A4 *

Also Published As

Publication number Publication date
JP2008294147A (ja) 2008-12-04
US20130273249A1 (en) 2013-10-17
US8486196B2 (en) 2013-07-16
EP2154711A1 (en) 2010-02-17
US20100173073A1 (en) 2010-07-08
EP2154711B1 (en) 2013-10-16
EP2154711A4 (en) 2011-11-16
US9644264B2 (en) 2017-05-09
JP5427344B2 (ja) 2014-02-26

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