WO2008132983A1 - Composition d'agent de polissage et procédé de fabrication d'un dispositif à circuit intégré à semiconducteur - Google Patents

Composition d'agent de polissage et procédé de fabrication d'un dispositif à circuit intégré à semiconducteur Download PDF

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Publication number
WO2008132983A1
WO2008132983A1 PCT/JP2008/056893 JP2008056893W WO2008132983A1 WO 2008132983 A1 WO2008132983 A1 WO 2008132983A1 JP 2008056893 W JP2008056893 W JP 2008056893W WO 2008132983 A1 WO2008132983 A1 WO 2008132983A1
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
agent composition
polishing
Prior art date
Application number
PCT/JP2008/056893
Other languages
English (en)
Japanese (ja)
Inventor
Satoshi Takemiya
Keiichi Ito
Original Assignee
Asahi Glass Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co., Ltd. filed Critical Asahi Glass Co., Ltd.
Priority to JP2009511751A priority Critical patent/JPWO2008132983A1/ja
Priority to EP08739996A priority patent/EP2139029A4/fr
Publication of WO2008132983A1 publication Critical patent/WO2008132983A1/fr
Priority to US12/580,311 priority patent/US20100035433A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Abstract

L'invention concerne une composition d'agent de polissage chimico-mécanique, utilisée pour polir une surface d'un dispositif à circuit intégré à semiconducteur. Cette composition d'agent de polissage contient: une particule de silice; un ou plusieurs agents oxydants sélectionnés dans le groupe constitué par peroxyde d'hydrogène, persulfate d'ammonium et persulfate de potassium; un composé de formule (1); pullulane; un ou plusieurs acides sélectionnés dans le groupe constitué par un acide nitrique, un acide sulfurique et des acides carboxyliques; et de l'eau; son pH étant compris entre 1 et 5. L'utilisation d'une telle composition d'agent de polissage confère une surface plate à une couche isolante comportant une interconnexion métallique enterrée, grâce au polissage d'une surface effectuée pendant la production d'un dispositif à circuit intégré à semiconducteur, ce qui permet d'obtenir un dispositif à circuit intégré à semiconducteur présentant une structure multicouche fortement planarisée.
PCT/JP2008/056893 2007-04-17 2008-04-07 Composition d'agent de polissage et procédé de fabrication d'un dispositif à circuit intégré à semiconducteur WO2008132983A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009511751A JPWO2008132983A1 (ja) 2007-04-17 2008-04-07 研磨剤組成物および半導体集積回路装置の製造方法
EP08739996A EP2139029A4 (fr) 2007-04-17 2008-04-07 Composition d'agent de polissage et procede de fabrication d'un dispositif a circuit integre a semiconducteur
US12/580,311 US20100035433A1 (en) 2007-04-17 2009-10-16 Polishing agent composition and method for manufacturing semiconductor integrated circuit device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-108556 2007-04-17
JP2007108556 2007-04-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/580,311 Continuation US20100035433A1 (en) 2007-04-17 2009-10-16 Polishing agent composition and method for manufacturing semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
WO2008132983A1 true WO2008132983A1 (fr) 2008-11-06

Family

ID=39925442

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056893 WO2008132983A1 (fr) 2007-04-17 2008-04-07 Composition d'agent de polissage et procédé de fabrication d'un dispositif à circuit intégré à semiconducteur

Country Status (7)

Country Link
US (1) US20100035433A1 (fr)
EP (1) EP2139029A4 (fr)
JP (1) JPWO2008132983A1 (fr)
KR (1) KR20100015627A (fr)
CN (1) CN101663738A (fr)
TW (1) TW200845177A (fr)
WO (1) WO2008132983A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010104085A1 (fr) * 2009-03-13 2010-09-16 旭硝子株式会社 Agent de polissage de semi-conducteur, procédé pour sa fabrication, et procédé de polissage
TWI677904B (zh) * 2017-09-29 2019-11-21 台灣積體電路製造股份有限公司 半導體裝置及其形成方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
CN102615584A (zh) * 2011-01-31 2012-08-01 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨的方法
CN102952466A (zh) * 2011-08-24 2013-03-06 安集微电子（上海）有限公司 一种化学机械抛光液
WO2015030813A1 (fr) 2013-08-30 2015-03-05 Halliburton Energy Services, Inc. Élimination de résines durcies de formations souterraines et complétions
TWI528877B (zh) * 2013-11-08 2016-04-01 長興材料工業股份有限公司 鈍化組合物及其應用
WO2015069288A1 (fr) * 2013-11-11 2015-05-14 Halliburton Energy Services, Inc. Élimination de revêtements de résine à partir de surfaces
KR102261638B1 (ko) 2013-11-15 2021-06-08 삼성디스플레이 주식회사 세정제 조성물 및 이를 이용한 금속배선 제조방법
US10315285B2 (en) 2015-04-06 2019-06-11 Cabot Microelectronics Corporation CMP composition and method for polishing rigid disks
JP7010229B2 (ja) * 2016-09-21 2022-01-26 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
TW202041627A (zh) * 2019-03-25 2020-11-16 美商卡博特微電子公司 增進化學機械拋光（ｃｍｐ）漿料中粒子分散之添加劑
CN112518571A (zh) * 2020-11-27 2021-03-19 华虹半导体(无锡)有限公司 铜化学机械研磨方法和设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077062A (ja) 1999-09-06 2001-03-23 Jsr Corp 半導体装置の製造に用いる化学機械研磨用水系分散体
JP2005294798A (ja) 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
JP2005294661A (ja) * 2004-04-02 2005-10-20 Hitachi Chem Co Ltd 研磨パッド及びそれを用いる研磨方法
JP2006049790A (ja) 2004-07-01 2006-02-16 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP2006100556A (ja) * 2004-09-29 2006-04-13 Hitachi Chem Co Ltd 研磨パッドとそれを用いた研磨方法
JP2006190890A (ja) * 2005-01-07 2006-07-20 Fuji Photo Film Co Ltd 研磨液及びそれを用いた研磨方法
JP2007108556A (ja) 2005-10-17 2007-04-26 Nikken Kogyo Kk 表示物取付器具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842193B2 (en) * 2005-09-29 2010-11-30 Fujifilm Corporation Polishing liquid

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077062A (ja) 1999-09-06 2001-03-23 Jsr Corp 半導体装置の製造に用いる化学機械研磨用水系分散体
JP2005294798A (ja) 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
JP2005294661A (ja) * 2004-04-02 2005-10-20 Hitachi Chem Co Ltd 研磨パッド及びそれを用いる研磨方法
JP2006049790A (ja) 2004-07-01 2006-02-16 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP2006100556A (ja) * 2004-09-29 2006-04-13 Hitachi Chem Co Ltd 研磨パッドとそれを用いた研磨方法
JP2006190890A (ja) * 2005-01-07 2006-07-20 Fuji Photo Film Co Ltd 研磨液及びそれを用いた研磨方法
JP2007108556A (ja) 2005-10-17 2007-04-26 Nikken Kogyo Kk 表示物取付器具

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2139029A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010104085A1 (fr) * 2009-03-13 2010-09-16 旭硝子株式会社 Agent de polissage de semi-conducteur, procédé pour sa fabrication, et procédé de polissage
TWI677904B (zh) * 2017-09-29 2019-11-21 台灣積體電路製造股份有限公司 半導體裝置及其形成方法
US10636701B2 (en) 2017-09-29 2020-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices using multiple planarization processes
US11121028B2 (en) 2017-09-29 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices formed using multiple planarization processes

Also Published As

Publication number Publication date
JPWO2008132983A1 (ja) 2010-07-22
EP2139029A4 (fr) 2010-03-24
EP2139029A1 (fr) 2009-12-30
KR20100015627A (ko) 2010-02-12
CN101663738A (zh) 2010-03-03
TW200845177A (en) 2008-11-16
US20100035433A1 (en) 2010-02-11

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