WO2008126625A1 - 上層反射防止膜形成用樹脂及び上層反射防止膜形成用組成物並びにレジストパターン形成方法 - Google Patents

上層反射防止膜形成用樹脂及び上層反射防止膜形成用組成物並びにレジストパターン形成方法 Download PDF

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Publication number
WO2008126625A1
WO2008126625A1 PCT/JP2008/054658 JP2008054658W WO2008126625A1 WO 2008126625 A1 WO2008126625 A1 WO 2008126625A1 JP 2008054658 W JP2008054658 W JP 2008054658W WO 2008126625 A1 WO2008126625 A1 WO 2008126625A1
Authority
WO
WIPO (PCT)
Prior art keywords
antireflective film
formation
upper antireflective
resin
forming
Prior art date
Application number
PCT/JP2008/054658
Other languages
English (en)
French (fr)
Inventor
Norihiro Natsume
Norihiko Sugie
Junichi Takahashi
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007077689A external-priority patent/JP5162934B2/ja
Priority claimed from JP2007085726A external-priority patent/JP4910829B2/ja
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to US12/530,624 priority Critical patent/US8497062B2/en
Publication of WO2008126625A1 publication Critical patent/WO2008126625A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　本発明の目的は、リソグラフィーにおいて、定在波効果を十分に低減することができ、且つアルカリ現像液に対する溶解性に優れた上層反射防止膜形成用樹脂及び上層反射防止膜形成用組成物並びにレジストパターン形成方法を提供することである。本上層反射防止膜形成用樹脂は、下式（１）の繰り返し単位、及び下式（２）の繰り返し単位のうちの少なくとも一方を含み、ＧＰＣ法により測定される重量平均分子量が１０００～１０００００であり、且つアルカリ現像液に可溶なものである。 　〔式中、Ｒ１～Ｒ１４は、それぞれ、水素原子、－ＯＨ、－ＣＯＯＨ、又は－ＳＯ３Ｈであり、且つＲ１～Ｒ７若しくはＲ８～Ｒ１４の全てが水素原子になることはない。〕
PCT/JP2008/054658 2007-03-23 2008-03-13 上層反射防止膜形成用樹脂及び上層反射防止膜形成用組成物並びにレジストパターン形成方法 WO2008126625A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/530,624 US8497062B2 (en) 2007-03-23 2008-03-13 Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-077689 2007-03-23
JP2007077689A JP5162934B2 (ja) 2007-03-23 2007-03-23 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP2007085726A JP4910829B2 (ja) 2007-03-28 2007-03-28 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP2007-085726 2007-03-28

Publications (1)

Publication Number Publication Date
WO2008126625A1 true WO2008126625A1 (ja) 2008-10-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054658 WO2008126625A1 (ja) 2007-03-23 2008-03-13 上層反射防止膜形成用樹脂及び上層反射防止膜形成用組成物並びにレジストパターン形成方法

Country Status (2)

Country Link
TW (1) TW200903172A (ja)
WO (1) WO2008126625A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120070782A1 (en) * 2009-03-24 2012-03-22 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5902529B2 (ja) * 2012-03-28 2016-04-13 株式会社ディスコ レーザ加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311585A (ja) * 2001-04-12 2002-10-23 Fuji Photo Film Co Ltd 電子線又はｘ線用ネガ型レジスト組成物
JP2005316387A (ja) * 2004-04-27 2005-11-10 Hynix Semiconductor Inc 上部反射防止膜（ＴｏｐＡｎｔｉ−ＲｅｆｌｅｃｔｉｖｅＣｏａｔｉｎｇ；ＴＡＲＣ）の重合体およびこの製造方法、並びにこれを含む上部反射防止膜の組成物
JP2005351983A (ja) * 2004-06-08 2005-12-22 Jsr Corp 塩基遮断性反射防止膜形成用組成物およびレジストパターンの形成方法
JP2006184575A (ja) * 2004-12-27 2006-07-13 Tokyo Ohka Kogyo Co Ltd レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP2006335916A (ja) * 2005-06-03 2006-12-14 Jsr Corp 液浸上層膜用重合体および液浸用上層膜形成組成物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311585A (ja) * 2001-04-12 2002-10-23 Fuji Photo Film Co Ltd 電子線又はｘ線用ネガ型レジスト組成物
JP2005316387A (ja) * 2004-04-27 2005-11-10 Hynix Semiconductor Inc 上部反射防止膜（ＴｏｐＡｎｔｉ−ＲｅｆｌｅｃｔｉｖｅＣｏａｔｉｎｇ；ＴＡＲＣ）の重合体およびこの製造方法、並びにこれを含む上部反射防止膜の組成物
JP2005351983A (ja) * 2004-06-08 2005-12-22 Jsr Corp 塩基遮断性反射防止膜形成用組成物およびレジストパターンの形成方法
JP2006184575A (ja) * 2004-12-27 2006-07-13 Tokyo Ohka Kogyo Co Ltd レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP2006335916A (ja) * 2005-06-03 2006-12-14 Jsr Corp 液浸上層膜用重合体および液浸用上層膜形成組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120070782A1 (en) * 2009-03-24 2012-03-22 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
US8546062B2 (en) * 2009-03-24 2013-10-01 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same

Also Published As

Publication number Publication date
TW200903172A (en) 2009-01-16

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