TW200903172A - Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method - Google Patents

Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method Download PDF

Info

Publication number
TW200903172A
TW200903172A TW097110062A TW97110062A TW200903172A TW 200903172 A TW200903172 A TW 200903172A TW 097110062 A TW097110062 A TW 097110062A TW 97110062 A TW97110062 A TW 97110062A TW 200903172 A TW200903172 A TW 200903172A
Authority
TW
Taiwan
Prior art keywords
group
forming
formula
film
hydrogen atom
Prior art date
Application number
TW097110062A
Other languages
English (en)
Chinese (zh)
Inventor
Norihiro Natsume
Norihiko Sugie
Junichi Takahashi
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007077689A external-priority patent/JP5162934B2/ja
Priority claimed from JP2007085726A external-priority patent/JP4910829B2/ja
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200903172A publication Critical patent/TW200903172A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Structural Engineering (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
TW097110062A 2007-03-23 2008-03-21 Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method TW200903172A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007077689A JP5162934B2 (ja) 2007-03-23 2007-03-23 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP2007085726A JP4910829B2 (ja) 2007-03-28 2007-03-28 上層反射防止膜形成用組成物及びレジストパターン形成方法

Publications (1)

Publication Number Publication Date
TW200903172A true TW200903172A (en) 2009-01-16

Family

ID=39863752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097110062A TW200903172A (en) 2007-03-23 2008-03-21 Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method

Country Status (2)

Country Link
TW (1) TW200903172A (ja)
WO (1) WO2008126625A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI558490B (zh) * 2012-03-28 2016-11-21 Disco Corp Laser processing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8097401B2 (en) * 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311585A (ja) * 2001-04-12 2002-10-23 Fuji Photo Film Co Ltd 電子線又はｘ線用ネガ型レジスト組成物
KR100574490B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
JP2005351983A (ja) * 2004-06-08 2005-12-22 Jsr Corp 塩基遮断性反射防止膜形成用組成物およびレジストパターンの形成方法
JP4275062B2 (ja) * 2004-12-27 2009-06-10 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
JP4742685B2 (ja) * 2005-06-03 2011-08-10 Ｊｓｒ株式会社 液浸上層膜用重合体および液浸用上層膜形成組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI558490B (zh) * 2012-03-28 2016-11-21 Disco Corp Laser processing method

Also Published As

Publication number Publication date
WO2008126625A1 (ja) 2008-10-23

Similar Documents

Publication Publication Date Title
US9360760B2 (en) Pattern forming process and shrink agent
US9429846B2 (en) Pattern forming process and shrink agent
TWI334421B (ja)
TWI345138B (en) Coating compositions for use with an overcoated photoresist
JP5162934B2 (ja) 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP4525683B2 (ja) 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
JP2011520148A (ja) 反射防止コーティング組成物
TW200903582A (en) Method for forming resist pattern and resin composition for insolubilizing formed resist patterns using therefor
WO1996024888A1 (fr) Procede de formation d'un motif de resist
TW200933302A (en) An antireflective coating composition and process thereof
TW200916954A (en) Photoresist composition for deep UV and process thereof
JP2012508910A (ja) 縮合芳香環を含む反射防止コーティング組成物
TW201224664A (en) Composition for forming liquid immersion upper layer film, and polymer
TWI702470B (zh) 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法及電子元件的製造方法
TW201027247A (en) Resist pattern coating agent and process for producing resist pattern using
TW200526692A (en) Method of forming laminated resist
JP4742685B2 (ja) 液浸上層膜用重合体および液浸用上層膜形成組成物
TW200947127A (en) Positive resist composition and method of forming resist pattern
TW200831621A (en) Antireflective coating compositions
JP5879209B2 (ja) レジスト組成物及びレジストパターン形成方法
JP4525454B2 (ja) 上層膜形成組成物およびフォトレジストパターン形成方法
TW201142517A (en) Upper layer-forming composition and resist patterning method
TW201701079A (zh) 基板處理方法、樹脂組成物及電子裝置的製造方法
JP3344063B2 (ja) 塩基遮断性反射防止膜およびレジストパターンの形成方法
JP5672120B2 (ja) 液浸用上層膜形成用組成物