TW200617599A - Positive resist composition and method for forming resist pattern - Google Patents

Positive resist composition and method for forming resist pattern

Info

Publication number
TW200617599A
TW200617599A TW094119868A TW94119868A TW200617599A TW 200617599 A TW200617599 A TW 200617599A TW 094119868 A TW094119868 A TW 094119868A TW 94119868 A TW94119868 A TW 94119868A TW 200617599 A TW200617599 A TW 200617599A
Authority
TW
Taiwan
Prior art keywords
resist composition
acid
positive resist
less
forming
Prior art date
Application number
TW094119868A
Other languages
Chinese (zh)
Other versions
TWI292083B (en
Inventor
Ryotaro Hayashi
Takeshi Iwai
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200617599A publication Critical patent/TW200617599A/en
Application granted granted Critical
Publication of TWI292083B publication Critical patent/TWI292083B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

A positive resist composition includes a base resin component (A) which contains an acid dissociable dissolution inhibiting group and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid by irradiation of a radiation, wherein the base resin component (A) includes a resin whose absorbance is 1.0 or less (1/μm) at a wavelength 193 nm and whose polydispersity (Mw/Mn) is 1.5 or less, and the positive resist composition is for thermal flow processes.
TW94119868A 2004-06-21 2005-06-15 Positive resist composition and method for forming resist pattern TWI292083B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004182298A JP2006003781A (en) 2004-06-21 2004-06-21 Positive resist composition and method for forming resist pattern

Publications (2)

Publication Number Publication Date
TW200617599A true TW200617599A (en) 2006-06-01
TWI292083B TWI292083B (en) 2008-01-01

Family

ID=35509862

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94119868A TWI292083B (en) 2004-06-21 2005-06-15 Positive resist composition and method for forming resist pattern

Country Status (4)

Country Link
JP (1) JP2006003781A (en)
KR (1) KR100910147B1 (en)
TW (1) TWI292083B (en)
WO (1) WO2005124463A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4801477B2 (en) * 2006-03-24 2011-10-26 富士通株式会社 Resist composition, method for forming resist pattern, semiconductor device and method for manufacturing the same
JP2010079270A (en) * 2008-08-29 2010-04-08 Fujifilm Corp Method of forming pattern, and photosensitive composition to be used therefor
JP2010173988A (en) * 2009-01-30 2010-08-12 Idemitsu Kosan Co Ltd Alicyclic compound, method for producing the same, composition containing the same and method for forming resist pattern using the composition
JP2011001319A (en) * 2009-06-19 2011-01-06 Idemitsu Kosan Co Ltd Alicyclic compound, method for producing the same, composition containing the same, and method for forming resist pattern using the composition
JP5319418B2 (en) * 2009-06-24 2013-10-16 住友化学株式会社 Resist pattern manufacturing method and resist pattern obtained therefrom
US10241292B2 (en) 2016-12-09 2019-03-26 Bae Systems Information And Electronic Systems Integration Inc. Ultra-fast and mechanically stable zoom lens

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3819531B2 (en) * 1997-05-20 2006-09-13 富士通株式会社 Resist composition and resist pattern forming method
EP1136885B1 (en) * 2000-03-22 2007-05-09 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and patterning method
JP2003066626A (en) 2001-08-30 2003-03-05 Fuji Photo Film Co Ltd Positive photosensitive composition and method for forming thermal flow pattern
JP4727092B2 (en) 2001-09-10 2011-07-20 東京応化工業株式会社 Chemically amplified resist composition
JP3895224B2 (en) * 2001-12-03 2007-03-22 東京応化工業株式会社 Positive resist composition and resist pattern forming method using the same
JP3890989B2 (en) 2002-01-25 2007-03-07 住友化学株式会社 Resist composition
JP2003238629A (en) * 2002-02-19 2003-08-27 Sumitomo Bakelite Co Ltd Polymer for chemically amplified photoresist and photoresist composition
JP4031327B2 (en) * 2002-09-05 2008-01-09 富士フイルム株式会社 Resist composition
EP1586594B1 (en) * 2002-11-05 2010-09-15 JSR Corporation Acrylic copolymer and radiation-sensitive resin composition
WO2004061525A1 (en) * 2002-12-28 2004-07-22 Jsr Corporation Radiation-sensitive resin composition
JP4360955B2 (en) * 2003-03-27 2009-11-11 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4083053B2 (en) * 2003-03-31 2008-04-30 富士フイルム株式会社 Positive resist composition
JP2005010488A (en) * 2003-06-19 2005-01-13 Tokyo Ohka Kogyo Co Ltd Positive resist composition

Also Published As

Publication number Publication date
KR100910147B1 (en) 2009-08-03
KR20070022334A (en) 2007-02-26
WO2005124463A1 (en) 2005-12-29
TWI292083B (en) 2008-01-01
JP2006003781A (en) 2006-01-05

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