WO2008123321A1 - 強磁性体の形成方法並びにトランジスタ及びその製造方法 - Google Patents

強磁性体の形成方法並びにトランジスタ及びその製造方法 Download PDF

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Publication number
WO2008123321A1
WO2008123321A1 PCT/JP2008/055769 JP2008055769W WO2008123321A1 WO 2008123321 A1 WO2008123321 A1 WO 2008123321A1 JP 2008055769 W JP2008055769 W JP 2008055769W WO 2008123321 A1 WO2008123321 A1 WO 2008123321A1
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WO
WIPO (PCT)
Prior art keywords
layer
transistor
magnetic element
semiconductor
ferromagnetic body
Prior art date
Application number
PCT/JP2008/055769
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English (en)
French (fr)
Inventor
Satoshi Sugahara
Yota Takamura
Original Assignee
Tokyo Institute Of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Institute Of Technology filed Critical Tokyo Institute Of Technology
Priority to US12/450,355 priority Critical patent/US7960186B2/en
Publication of WO2008123321A1 publication Critical patent/WO2008123321A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H01F10/1936—Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66984—Devices using spin polarized carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　本発明は、反応抑制層１４上に形成された半導体層１６上に磁性元素層２０を形成する工程と、半導体層１６と磁性元素層２０とを熱処理し反応させることにより、反応抑制層１４上にホイスラー合金層２６である強磁性体層を形成する工程と、を有することを特徴とする強磁性体の形成方法並びにトランジスタ及びその製造方法である。本発明によれば、半導体層と磁性元素層との反応を抑制する反応抑制層により、半導体と磁性元素との反応に供給される半導体が制限され、磁性元素の組成比の大きな強磁性体を形成することができる。
PCT/JP2008/055769 2007-03-26 2008-03-26 強磁性体の形成方法並びにトランジスタ及びその製造方法 WO2008123321A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/450,355 US7960186B2 (en) 2007-03-26 2008-03-26 Method of forming ferromagnetic material, transistor and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-078925 2007-03-26
JP2007078925A JP4742276B2 (ja) 2007-03-26 2007-03-26 強磁性体の形成方法並びにトランジスタ及びその製造方法

Publications (1)

Publication Number Publication Date
WO2008123321A1 true WO2008123321A1 (ja) 2008-10-16

Family

ID=39830809

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055769 WO2008123321A1 (ja) 2007-03-26 2008-03-26 強磁性体の形成方法並びにトランジスタ及びその製造方法

Country Status (3)

Country Link
US (1) US7960186B2 (ja)
JP (1) JP4742276B2 (ja)
WO (1) WO2008123321A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011033665A1 (ja) * 2009-09-18 2011-03-24 株式会社 東芝 半導体装置およびその製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738499B2 (ja) * 2009-02-10 2011-08-03 株式会社東芝 スピントランジスタの製造方法
JP5413646B2 (ja) * 2009-03-26 2014-02-12 国立大学法人東北大学 ホイスラー合金材料、磁気抵抗素子および磁気デバイス
US8889537B2 (en) * 2010-07-09 2014-11-18 International Business Machines Corporation Implantless dopant segregation for silicide contacts
KR20140134068A (ko) * 2013-05-13 2014-11-21 에스케이하이닉스 주식회사 스핀 트랜지스터 및 이 스핀 트랜지스터를 포함하는 반도체 장치, 메모리 장치, 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템
US11107908B2 (en) 2016-07-01 2021-08-31 Intel Corporation Transistors with metal source and drain contacts including a Heusler alloy

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH10183349A (ja) * 1996-08-31 1998-07-14 Skm Ltd アンチモン化インジウム（ＩｎＳｂ）層形成方法
JP2005228998A (ja) * 2004-02-13 2005-08-25 Japan Science & Technology Agency 磁性薄膜及びそれを用いた磁気抵抗効果素子並びに磁気デバイス
JP2006286726A (ja) * 2005-03-31 2006-10-19 Toshiba Corp スピン注入ｆｅｔ

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US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
WO2002099906A1 (fr) * 2001-06-04 2002-12-12 Matsushita Electric Industrial Co., Ltd. Element magnetoresistant, element de memorisation par magnetoresistance et memoire magnetique
US7528428B2 (en) * 2003-03-07 2009-05-05 Japan Science And Technology Agency Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same
EP1610386A4 (en) * 2003-03-31 2009-04-01 Japan Science & Tech Agency TUNNEL TRANSISTOR WITH SPIN-DEPENDENT TRANSFER CHARACTERISTICS AND NON-VOLATILE MEMORY THEREOF
JP4128938B2 (ja) * 2003-10-28 2008-07-30 株式会社日立製作所 磁気ヘッド及び磁気記録再生装置
JP2007207919A (ja) * 2006-01-31 2007-08-16 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10183349A (ja) * 1996-08-31 1998-07-14 Skm Ltd アンチモン化インジウム（ＩｎＳｂ）層形成方法
JP2005228998A (ja) * 2004-02-13 2005-08-25 Japan Science & Technology Agency 磁性薄膜及びそれを用いた磁気抵抗効果素子並びに磁気デバイス
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SUGAHARA S.: "Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETSs) for integrated spin electronics", IEE PROCEEDINGS-CIRCUITS, DEVICES AND SYSTEMS, vol. 152, no. 4, 5 August 2005 (2005-08-05), pages 355 - 365, XP006024923 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011033665A1 (ja) * 2009-09-18 2011-03-24 株式会社 東芝 半導体装置およびその製造方法
US8330196B2 (en) 2009-09-18 2012-12-11 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP5443502B2 (ja) * 2009-09-18 2014-03-19 株式会社東芝 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP4742276B2 (ja) 2011-08-10
US7960186B2 (en) 2011-06-14
JP2008243922A (ja) 2008-10-09
US20100171158A1 (en) 2010-07-08

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