JP4742276B2 - 強磁性体の形成方法並びにトランジスタ及びその製造方法 - Google Patents
強磁性体の形成方法並びにトランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP4742276B2 JP4742276B2 JP2007078925A JP2007078925A JP4742276B2 JP 4742276 B2 JP4742276 B2 JP 4742276B2 JP 2007078925 A JP2007078925 A JP 2007078925A JP 2007078925 A JP2007078925 A JP 2007078925A JP 4742276 B2 JP4742276 B2 JP 4742276B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- forming
- ferromagnetic
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000003302 ferromagnetic material Substances 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 80
- 229910001291 heusler alloy Inorganic materials 0.000 claims description 66
- 230000005291 magnetic effect Effects 0.000 claims description 53
- 230000005294 ferromagnetic effect Effects 0.000 claims description 48
- 230000001629 suppression Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000005204 segregation Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 229910052742 iron Inorganic materials 0.000 description 12
- 229910005347 FeSi Inorganic materials 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000004151 rapid thermal annealing Methods 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910015372 FeAl Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/193—Magnetic semiconductor compounds
- H01F10/1936—Half-metallic, e.g. epitaxial CrO2 or NiMnSb films
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Description
S. Sugahara, IEE Proc. Circuits, Devices & Systems. Vol. 152 (2005) p355-365. S. Sugahara, phys. Stat. Sol. (c) 3 (2006) p.4405-4413
10a GOI基板
12 Si基板
14 酸化シリコン膜
16 Si層
16a Ge層
20 磁性元素層
22 Co層
24 Fe層
26 ホイスラー合金層
30 ゲート金属
32 ゲート酸化膜
34 側壁
40 高ドープ層
42 不純物層
44 偏析層
Claims (21)
- 反応抑制層上に形成された半導体層上に磁性元素層を形成する工程と、
前記半導体層と前記磁性元素層とを熱処理し反応させることにより、前記反応抑制層上にホイスラー合金である強磁性体層を形成する工程と、を有することを特徴とする強磁性体の形成方法。 - 前記半導体層はシリコン及びゲルマニウムの少なくとも一方を含むことを特徴とする請求項1記載の強磁性体の形成方法。
- 前記反応抑制層は酸化シリコン膜であることを特徴とする請求項1または2記載の強磁性体の形成方法。
- 前記反応抑制層はシリコン基板であり、前記半導体層はゲルマニウムであることを特徴とする請求項1記載の強磁性体の形成方法。
- 前記磁性元素層を形成する工程は、前記半導体層上に前記磁性元素層を選択的に形成する工程であり、
前記強磁性層を形成する工程は、前記反応抑制層上に前記強磁性層を選択的に形成する工程であることを特徴とする請求項1から4のいずれか一項記載の強磁性体の形成方法。 - 反応抑制層上に形成された半導体層内のチャネルとなるべき領域の両側のうち少なくとも一方の半導体層上に選択的に磁性元素層を形成する工程と、
前記半導体層と前記磁性元素層とを熱処理し反応させることにより、前記反応抑制層上にホイスラー合金である強磁性体電極を形成する工程と、を有することを特徴とするトランジスタの製造方法。 - 前記半導体層はシリコン及びゲルマニウムの少なくとも一方を含むことを特徴とする請求項6記載のトランジスタの製造方法。
- 前記反応抑制層は酸化シリコン膜であることを特徴とする請求項6または7記載のトランジスタの製造方法。
- 前記反応抑制層はシリコン基板であり、前記半導体層はゲルマニウムであることを特徴とする請求項6記載のトランジスタの製造方法。
- 前記強磁性体電極はソース電極及びドレイン電極であることを特徴とする請求項6から9のいずれか一項記載のトランジスタの製造方法。
- 前記半導体チャネルと前記強磁性電極との間に、前記半導体チャネルよりドーパントを高濃度に含む半導体領域を形成する工程を有することを特徴とする請求項6から10のいずれか一項記載のトランジスタの製造方法。
- 前記半導体チャネルと前記強磁性電極との間に、偏析層を形成する工程を有することを特徴とする請求項6から10のいずれか一項記載のトランジスタの製造方法。
- 前記チャネルとなるべき領域上にゲート電極及びゲート電極の両側に側壁を形成する工程を有し、
前記強磁性体電極を形成する工程は、前記側壁下まで侵食するように前記強磁性電極を形成する工程を含むことを特徴とする請求項6から10のいずれか一項記載のトランジスタの製造方法。 - 反応抑制層上に設けられた半導体チャネル層と、
前記半導体チャネルの両側のうち少なくとも一方の前記反応抑制層上に設けられ、前記半導体チャネルを構成する半導体と磁性元素とのホイスラー合金である強磁性体電極と、を有することを特徴とするトランジスタ。 - 前記半導体層は、シリコン及びゲルマニウムの少なくとも一方を含むことを特徴とする請求項14記載のトランジスタ。
- 前記反応抑制層は酸化シリコン膜であることを特徴とする請求項14または15記載のトランジスタ。
- 前記反応抑制層はシリコン基板であり、前記半導体層はゲルマニウムであることを特徴とする請求項14記載のトランジスタ。
- 前記強磁性体電極はソース電極及びドレイン電極であることを特徴とする請求項14から17のいずれか一項記載のトランジスタ。
- 前記半導体チャネルと前記強磁性電極との間に、前記半導体チャネルよりドーパントを高濃度に含む半導体領域を具備することを特徴とする請求項14から17のいずれか一項記載のトランジスタ。
- 前記半導体チャネルと前記強磁性電極との間に、偏析層を具備することを特徴とする請求項14から17のいずれか一項記載のトランジスタ。
- 前記半導体チャネル上に設けられたゲート電極及びゲート電極の両側に形成された側壁を具備し、
前記強磁性体電極は前記側壁下まで侵食していることを特徴とする請求項14から17のいずれか一項記載のトランジスタ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007078925A JP4742276B2 (ja) | 2007-03-26 | 2007-03-26 | 強磁性体の形成方法並びにトランジスタ及びその製造方法 |
US12/450,355 US7960186B2 (en) | 2007-03-26 | 2008-03-26 | Method of forming ferromagnetic material, transistor and method of manufacturing the same |
PCT/JP2008/055769 WO2008123321A1 (ja) | 2007-03-26 | 2008-03-26 | 強磁性体の形成方法並びにトランジスタ及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007078925A JP4742276B2 (ja) | 2007-03-26 | 2007-03-26 | 強磁性体の形成方法並びにトランジスタ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008243922A JP2008243922A (ja) | 2008-10-09 |
JP4742276B2 true JP4742276B2 (ja) | 2011-08-10 |
Family
ID=39830809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007078925A Active JP4742276B2 (ja) | 2007-03-26 | 2007-03-26 | 強磁性体の形成方法並びにトランジスタ及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7960186B2 (ja) |
JP (1) | JP4742276B2 (ja) |
WO (1) | WO2008123321A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4738499B2 (ja) | 2009-02-10 | 2011-08-03 | 株式会社東芝 | スピントランジスタの製造方法 |
JP5413646B2 (ja) * | 2009-03-26 | 2014-02-12 | 国立大学法人東北大学 | ホイスラー合金材料、磁気抵抗素子および磁気デバイス |
JP5443502B2 (ja) * | 2009-09-18 | 2014-03-19 | 株式会社東芝 | 半導体装置およびその製造方法 |
US8889537B2 (en) * | 2010-07-09 | 2014-11-18 | International Business Machines Corporation | Implantless dopant segregation for silicide contacts |
KR20140134068A (ko) * | 2013-05-13 | 2014-11-21 | 에스케이하이닉스 주식회사 | 스핀 트랜지스터 및 이 스핀 트랜지스터를 포함하는 반도체 장치, 메모리 장치, 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
WO2018004700A1 (en) * | 2016-07-01 | 2018-01-04 | Intel Corporation | Transistors with metal source and drain contacts including a heusler alloy |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6741494B2 (en) * | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
US5861069A (en) | 1996-08-31 | 1999-01-19 | Skm Limited | Method for forming an indium antimonide layer |
US7005691B2 (en) * | 2001-06-04 | 2006-02-28 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance element and magnetoresistance storage element and magnetic memory |
EP1603168B1 (en) * | 2003-03-07 | 2017-01-11 | Japan Science and Technology Agency | Field-effect transistor with spin-dependent transmission characteristic with half-metal source and drain |
CN100589247C (zh) * | 2003-03-31 | 2010-02-10 | 独立行政法人科学技术振兴机构 | 具有自旋相关转移特性的隧道晶体管及使用了它的非易失性存储器 |
JP4128938B2 (ja) * | 2003-10-28 | 2008-07-30 | 株式会社日立製作所 | 磁気ヘッド及び磁気記録再生装置 |
JP2005228998A (ja) * | 2004-02-13 | 2005-08-25 | Japan Science & Technology Agency | 磁性薄膜及びそれを用いた磁気抵抗効果素子並びに磁気デバイス |
JP4528660B2 (ja) * | 2005-03-31 | 2010-08-18 | 株式会社東芝 | スピン注入fet |
JP2007207919A (ja) * | 2006-01-31 | 2007-08-16 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
JP2008047706A (ja) * | 2006-08-16 | 2008-02-28 | Nec Lcd Technologies Ltd | 半導体回路及びそれを用いた半導体装置 |
JP4455558B2 (ja) * | 2006-09-08 | 2010-04-21 | 株式会社東芝 | スピンmosfet |
-
2007
- 2007-03-26 JP JP2007078925A patent/JP4742276B2/ja active Active
-
2008
- 2008-03-26 US US12/450,355 patent/US7960186B2/en active Active
- 2008-03-26 WO PCT/JP2008/055769 patent/WO2008123321A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US7960186B2 (en) | 2011-06-14 |
WO2008123321A1 (ja) | 2008-10-16 |
US20100171158A1 (en) | 2010-07-08 |
JP2008243922A (ja) | 2008-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4738499B2 (ja) | スピントランジスタの製造方法 | |
Lee et al. | Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs | |
JP4742276B2 (ja) | 強磁性体の形成方法並びにトランジスタ及びその製造方法 | |
Gupta et al. | New materials for post-Si computing: Ge and GeSn devices | |
US9911849B2 (en) | Transistor and method of forming same | |
US7973351B2 (en) | Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same | |
US8299535B2 (en) | Delta monolayer dopants epitaxy for embedded source/drain silicide | |
JP5745076B2 (ja) | SiGeチャネルを有するpFET接合プロフィールのための方法および構造体 | |
JP5221112B2 (ja) | 半導体装置の製造方法および半導体装置 | |
Averyanov et al. | Europium silicide–a prospective material for contacts with silicon | |
Mitard et al. | First demonstration of 15nm-W FIN inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain | |
Chang et al. | Gate-first high-performance germanium nMOSFET and pMOSFET using low thermal budget ion implantation after germanidation technique | |
US20060275968A1 (en) | Method for producing a contact and electronic component comprising said type of contact | |
Tu et al. | Experimental demonstration of TreeFETs combining stacked nanosheets and low doping interbridges by epitaxy and wet etching | |
Brunco et al. | Germanium: The past and possibly a future material for microelectronics | |
Sung et al. | High-performance uniaxial tensile strained n-channel JL SOI FETs and triangular JL bulk FinFETs for nanoscaled applications | |
TW201709574A (zh) | 磁穿隧接面 | |
Ahn et al. | Formation of low-resistivity nickel germanide using atomic layer deposited nickel thin film | |
Chen et al. | Enhancing the performance of germanium channel nMOSFET using phosphorus dopant segregation | |
US20070045849A1 (en) | Semiconductor structure having selective silicide-induced stress and a method of producing same | |
Bang et al. | Effect of high pressure hydrogen or deuterium anneal on polysilicon channel field effect transistors | |
Jiang et al. | Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel | |
JP2011223010A (ja) | スピンmosfetおよびリコンフィギャラブルロジック回路 | |
Wang et al. | Optimization of Ni (Pt)/Si-cap/SiGe silicidation for pMOS source/drain contact | |
Rabie et al. | Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100311 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110412 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4742276 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |