WO2008123295A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
WO2008123295A1
WO2008123295A1 PCT/JP2008/055690 JP2008055690W WO2008123295A1 WO 2008123295 A1 WO2008123295 A1 WO 2008123295A1 JP 2008055690 W JP2008055690 W JP 2008055690W WO 2008123295 A1 WO2008123295 A1 WO 2008123295A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
radiating
ports
substrate stage
processing apparatus
Prior art date
Application number
PCT/JP2008/055690
Other languages
English (en)
French (fr)
Inventor
Yasunari Mori
Hiroyuki Tachibana
Naomasa Miyatake
Kazuki Takizawa
Original Assignee
Mitsui Engineering & Shipbuilding Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering & Shipbuilding Co., Ltd. filed Critical Mitsui Engineering & Shipbuilding Co., Ltd.
Priority to JP2008551375A priority Critical patent/JP4426632B2/ja
Publication of WO2008123295A1 publication Critical patent/WO2008123295A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

　プラズマ処理装置は、処理対象基板が配置される基板ステージと、アンテナアレイを用いてプラズマを生成するプラズマ生成部と、前記アンテナアレイの上方に設けられた複数のガス放射口を有するガス放射板を備えるガス放射部と、前記ガス放射板の複数のガス放射口の一部分から前記基板ステージの表面に向けて放射して前記アンテナ素子の表面を通るように、第１原料ガスを供給する第１のガス供給部と、前記ガス放射板の複数のガス放射口の他の部分から前記基板ステージの表面に向けて放射して前記アンテナ素子の間隙を通るように、第２原料ガスを供給する第２のガス供給部と、を有する。第１原料ガスは、アンテナ素子に曝された場合、付着物が生じないか、または第２原料ガスよりも付着量が少ない。これにより、成膜速度を向上させるとともに、パーティクルの発生を抑制することができる。
PCT/JP2008/055690 2007-03-30 2008-03-26 プラズマ処理装置 WO2008123295A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008551375A JP4426632B2 (ja) 2007-03-30 2008-03-26 プラズマ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007091869 2007-03-30
JP2007-091869 2007-03-30

Publications (1)

Publication Number Publication Date
WO2008123295A1 true WO2008123295A1 (ja) 2008-10-16

Family

ID=39830783

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055690 WO2008123295A1 (ja) 2007-03-30 2008-03-26 プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP4426632B2 (ja)
KR (1) KR101076674B1 (ja)
TW (1) TW200917910A (ja)
WO (1) WO2008123295A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058560A1 (ja) * 2008-11-20 2010-05-27 株式会社エバテック プラズマ処理装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014096553A (ja) * 2012-10-09 2014-05-22 Tokyo Electron Ltd プラズマ処理方法、及びプラズマ処理装置
KR101619899B1 (ko) 2014-07-25 2016-05-12 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR101640092B1 (ko) 2014-07-25 2016-07-18 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR101640094B1 (ko) 2014-08-08 2016-07-18 인베니아 주식회사 플라즈마 처리장치용 플라즈마 발생모듈
US20210098230A1 (en) * 2019-09-27 2021-04-01 Applied Materials, Inc. Monolithic modular high-frequency plasma source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03122281A (ja) * 1989-10-06 1991-05-24 Anelva Corp Ｃｖｄ装置
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
JP2001077029A (ja) * 1999-09-09 2001-03-23 Nec Corp 薄膜製造装置および製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03122281A (ja) * 1989-10-06 1991-05-24 Anelva Corp Ｃｖｄ装置
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
JP2001077029A (ja) * 1999-09-09 2001-03-23 Nec Corp 薄膜製造装置および製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058560A1 (ja) * 2008-11-20 2010-05-27 株式会社エバテック プラズマ処理装置

Also Published As

Publication number Publication date
JPWO2008123295A1 (ja) 2010-07-15
KR20090117777A (ko) 2009-11-12
JP4426632B2 (ja) 2010-03-03
KR101076674B1 (ko) 2011-10-26
TW200917910A (en) 2009-04-16

Similar Documents

Publication Publication Date Title
WO2008123295A1 (ja) プラズマ処理装置
WO2006104921A3 (en) A plasma enhanced atomic layer deposition system and method
GB2465528A (en) Method and apparatus for surface processing of a substrate using an energetic particle beam
WO2006104863A3 (en) A plasma enhanced atomic layer deposition system
WO2018109551A3 (en) Sequential infiltration synthesis apparatus
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
WO2008089168A3 (en) Plasma immersion chamber
WO2010095901A3 (en) Method for forming thin film using radicals generated by plasma
EP1830392A3 (en) Thermal processing system with accross-flow liner
TW200636855A (en) Vertical batch processing apparatus
WO2010054112A3 (en) Plasma resistant coatings for plasma chamber components
SG155927A1 (en) Substrate holding device, exposure apparatus, and device manufacturing method
JP2009531858A5 (ja)
TW200745355A (en) Evaporation apparatus evaporation method, method of manufacturing electro-optical device, and film-forming apparatus
EP2653588A3 (en) Material for heat resistant component
WO2008146575A1 (ja) 化合物系薄膜及びその形成方法、並びにその薄膜を用いた電子装置
WO2009051087A1 (ja) プラズマ成膜装置
TW200746265A (en) Methods and apparatus for epitaxial film formation
TW200737589A (en) Electronic device and antenna structure thereof
WO2008014739A3 (de) Strahlungsemittierendes bauelement
NO20061293L (no) Fast tilstandsmembranmodul
TW200641086A (en) Adhesive sheet for dicing and dicing method using the same
PL1740384T3 (pl) Układ mikroprzepływowy
WO2009008230A1 (ja) Ｅｕｖ光源、ｅｕｖ露光装置および電子デバイスの製造方法
WO2011064392A3 (en) Method and apparatus for depositing nanostructured thin layers with controlled morphology and nanostructure

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2008551375

Country of ref document: JP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722855

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1020097018413

Country of ref document: KR

Ref document number: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08722855

Country of ref document: EP

Kind code of ref document: A1