KR101076674B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR101076674B1
KR101076674B1 KR1020097018413A KR20097018413A KR101076674B1 KR 101076674 B1 KR101076674 B1 KR 101076674B1 KR 1020097018413 A KR1020097018413 A KR 1020097018413A KR 20097018413 A KR20097018413 A KR 20097018413A KR 101076674 B1 KR101076674 B1 KR 101076674B1
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KR
South Korea
Prior art keywords
gas
source gas
substrate stage
antenna element
source
Prior art date
Application number
KR1020097018413A
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English (en)
Korean (ko)
Other versions
KR20090117777A (ko
Inventor
야스나리 모리
히로유키 타치바나
나오마사 미야타케
카즈키 타키자와
Original Assignee
미쯔이 죠센 가부시키가이샤
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Publication of KR20090117777A publication Critical patent/KR20090117777A/ko
Application granted granted Critical
Publication of KR101076674B1 publication Critical patent/KR101076674B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020097018413A 2007-03-30 2008-03-26 플라즈마 처리 장치 KR101076674B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007091869 2007-03-30
JPJP-P-2007-091869 2007-03-30

Publications (2)

Publication Number Publication Date
KR20090117777A KR20090117777A (ko) 2009-11-12
KR101076674B1 true KR101076674B1 (ko) 2011-10-26

Family

ID=39830783

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018413A KR101076674B1 (ko) 2007-03-30 2008-03-26 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP4426632B2 (ja)
KR (1) KR101076674B1 (ja)
TW (1) TW200917910A (ja)
WO (1) WO2008123295A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160012742A (ko) 2014-07-25 2016-02-03 엘아이지인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR20160012741A (ko) 2014-07-25 2016-02-03 엘아이지인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR20160018152A (ko) 2014-08-08 2016-02-17 엘아이지인베니아 주식회사 플라즈마 처리장치용 플라즈마 발생모듈

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010058560A1 (ja) * 2008-11-20 2010-05-27 株式会社エバテック プラズマ処理装置
JP2014096553A (ja) * 2012-10-09 2014-05-22 Tokyo Electron Ltd プラズマ処理方法、及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
JP2001077029A (ja) 1999-09-09 2001-03-23 Nec Corp 薄膜製造装置および製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969596B2 (ja) * 1989-10-06 1999-11-02 アネルバ株式会社 Ｃｖｄ装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
JP2001077029A (ja) 1999-09-09 2001-03-23 Nec Corp 薄膜製造装置および製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160012742A (ko) 2014-07-25 2016-02-03 엘아이지인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR20160012741A (ko) 2014-07-25 2016-02-03 엘아이지인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR20160018152A (ko) 2014-08-08 2016-02-17 엘아이지인베니아 주식회사 플라즈마 처리장치용 플라즈마 발생모듈

Also Published As

Publication number Publication date
KR20090117777A (ko) 2009-11-12
TW200917910A (en) 2009-04-16
JPWO2008123295A1 (ja) 2010-07-15
WO2008123295A1 (ja) 2008-10-16
JP4426632B2 (ja) 2010-03-03

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