WO2008117398A1 - マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法 - Google Patents

マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法 Download PDF

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Publication number
WO2008117398A1
WO2008117398A1 PCT/JP2007/056246 JP2007056246W WO2008117398A1 WO 2008117398 A1 WO2008117398 A1 WO 2008117398A1 JP 2007056246 W JP2007056246 W JP 2007056246W WO 2008117398 A1 WO2008117398 A1 WO 2008117398A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
beam exposure
multicolumn
property
exposure device
Prior art date
Application number
PCT/JP2007/056246
Other languages
English (en)
French (fr)
Inventor
Akio Yamada
Hiroshi Yasuda
Mitsuhiro Nakano
Takashi Kiuchi
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to JP2008514265A priority Critical patent/JP5368086B2/ja
Priority to PCT/JP2007/056246 priority patent/WO2008117398A1/ja
Publication of WO2008117398A1 publication Critical patent/WO2008117398A1/ja
Priority to US12/586,717 priority patent/US8222619B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24521—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

【課題】マルチコラム電子ビーム露光装置においてコラムセル相互間のパターンのつなぎ精度を向上させることが可能なマルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法を提供すること。 【解決手段】マルチコラム電子ビーム露光装置は、複数個のコラムセルと、電子ビーム特性を測定する電子ビーム特性検出部を備えたウエハステージと、電子ビーム特性検出部を用いて、すべてのコラムセルで使用する電子ビームのビーム特性を測定し、各コラムセルで使用する電子ビームの特性を略同一にするように各コラムセルの電子ビームを調整する制御部とを有する。前記電子ビーム特性は、照射される電子ビームのビーム位置、ビーム強度、ビーム形状のうちのいずれかであってもよく、前記電子ビーム特性検出部は、基準マークが形成されたキャリブレーション用チップ又はファラデーカップであってもよい。
PCT/JP2007/056246 2007-03-26 2007-03-26 マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法 WO2008117398A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008514265A JP5368086B2 (ja) 2007-03-26 2007-03-26 マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法
PCT/JP2007/056246 WO2008117398A1 (ja) 2007-03-26 2007-03-26 マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法
US12/586,717 US8222619B2 (en) 2007-03-26 2009-09-25 Multi-column electron beam exposure apparatus and multi-column electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056246 WO2008117398A1 (ja) 2007-03-26 2007-03-26 マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/586,717 Continuation US8222619B2 (en) 2007-03-26 2009-09-25 Multi-column electron beam exposure apparatus and multi-column electron beam exposure method

Publications (1)

Publication Number Publication Date
WO2008117398A1 true WO2008117398A1 (ja) 2008-10-02

Family

ID=39788141

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056246 WO2008117398A1 (ja) 2007-03-26 2007-03-26 マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法

Country Status (3)

Country Link
US (1) US8222619B2 (ja)
JP (1) JP5368086B2 (ja)
WO (1) WO2008117398A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2228817A3 (en) * 2009-03-09 2011-05-11 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
JP2012222068A (ja) * 2011-04-06 2012-11-12 Advantest Corp 電子ビーム露光装置及び電子ビーム露光方法
JP2013115148A (ja) * 2011-11-25 2013-06-10 Canon Inc 走査装置、描画装置、及び物品の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5020745B2 (ja) * 2007-08-29 2012-09-05 株式会社ニューフレアテクノロジー 描画データの作成方法及び荷電粒子ビーム描画装置
GB2494118A (en) * 2011-08-28 2013-03-06 Applied Materials Israel Ltd Test object for testing an array of beams
CN103048885B (zh) * 2011-10-11 2015-02-25 中山新诺科技股份有限公司 无掩膜曝光系统及方法
US9589764B2 (en) * 2015-03-27 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Electron beam lithography process with multiple columns

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283121A (ja) * 1985-06-10 1986-12-13 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム投影露光装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH11329322A (ja) * 1998-05-11 1999-11-30 Advantest Corp 電子ビーム露光方法及び電子ビーム露光装置
JP2002203777A (ja) * 2001-01-04 2002-07-19 Hitachi Ltd 電子ビーム描画方法及び電子ビーム描画システム
JP2006278492A (ja) * 2005-03-28 2006-10-12 Advantest Corp 電子ビーム露光装置及び電子ビーム露光方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203777A (ja) 2000-01-19 2001-07-27 Hitachi Ltd 通信ライン断線検出システム
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP4327497B2 (ja) 2002-06-26 2009-09-09 株式会社アドバンテスト 電子ビーム露光装置、電子ビーム露光方法、半導体素子製造方法、マスク、及びマスク製造方法
JP4184782B2 (ja) * 2002-12-20 2008-11-19 株式会社日立製作所 マルチ電子ビーム装置およびそれに用いられるマルチ電子ビーム電流の計測・表示方法
JPWO2006104139A1 (ja) * 2005-03-29 2008-09-11 株式会社アドバンテスト マルチコラム型電子ビーム露光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283121A (ja) * 1985-06-10 1986-12-13 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム投影露光装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH11329322A (ja) * 1998-05-11 1999-11-30 Advantest Corp 電子ビーム露光方法及び電子ビーム露光装置
JP2002203777A (ja) * 2001-01-04 2002-07-19 Hitachi Ltd 電子ビーム描画方法及び電子ビーム描画システム
JP2006278492A (ja) * 2005-03-28 2006-10-12 Advantest Corp 電子ビーム露光装置及び電子ビーム露光方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2228817A3 (en) * 2009-03-09 2011-05-11 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
US8278635B2 (en) 2009-03-09 2012-10-02 Ims Nanofabrication Ag Global point spreading function in multi-beam patterning
JP2012222068A (ja) * 2011-04-06 2012-11-12 Advantest Corp 電子ビーム露光装置及び電子ビーム露光方法
JP2013115148A (ja) * 2011-11-25 2013-06-10 Canon Inc 走査装置、描画装置、及び物品の製造方法

Also Published As

Publication number Publication date
JPWO2008117398A1 (ja) 2010-07-08
US8222619B2 (en) 2012-07-17
JP5368086B2 (ja) 2013-12-18
US20100019172A1 (en) 2010-01-28

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