WO2008111203A1 - レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 - Google Patents
レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 Download PDFInfo
- Publication number
- WO2008111203A1 WO2008111203A1 PCT/JP2007/055145 JP2007055145W WO2008111203A1 WO 2008111203 A1 WO2008111203 A1 WO 2008111203A1 JP 2007055145 W JP2007055145 W JP 2007055145W WO 2008111203 A1 WO2008111203 A1 WO 2008111203A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resist composition
- electronic device
- forming
- resist pattern
- liquid immersion
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000007654 immersion Methods 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 3
- 239000002253 acid Substances 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 238000002386 leaching Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 150000003377 silicon compounds Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
液浸露光技術において、前記液浸媒体への溶出を抑制し、性能低下がなく、微細なレジストパターンを形成可能なレジスト組成物、それを用いたレジストパターンの形成方法、及び電子デバイスの製造方法を提供することを目的とする。
本発明のレジスト組成物は、液浸露光用であって、置換基で置換されていてもよいアルカリ可溶性基を少なくとも有するケイ素化合物と、酸脱離基で置換されていてもよいアルカリ可溶性基を有する樹脂と、を少なくとも含む。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/055145 WO2008111203A1 (ja) | 2007-03-14 | 2007-03-14 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
JP2009503878A JP5110077B2 (ja) | 2007-03-14 | 2007-09-28 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
PCT/JP2007/069052 WO2008111251A1 (ja) | 2007-03-14 | 2007-09-28 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
US12/557,211 US8652751B2 (en) | 2007-03-14 | 2009-09-10 | Resist composition, method for forming resist pattern, and method for producing electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/055145 WO2008111203A1 (ja) | 2007-03-14 | 2007-03-14 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008111203A1 true WO2008111203A1 (ja) | 2008-09-18 |
Family
ID=39759154
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/055145 WO2008111203A1 (ja) | 2007-03-14 | 2007-03-14 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
PCT/JP2007/069052 WO2008111251A1 (ja) | 2007-03-14 | 2007-09-28 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/069052 WO2008111251A1 (ja) | 2007-03-14 | 2007-09-28 | レジスト組成物、レジストパターンの形成方法、及び電子デバイスの製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8652751B2 (ja) |
WO (2) | WO2008111203A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5771379B2 (ja) | 2009-10-15 | 2015-08-26 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法 |
JP5920491B2 (ja) * | 2015-01-15 | 2016-05-18 | Jsr株式会社 | 液浸露光用感放射線性樹脂組成物及び硬化パターン形成方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000221685A (ja) * | 1999-01-28 | 2000-08-11 | Fuji Photo Film Co Ltd | ポジ型シリコーン含有感光性組成物 |
JP2000221686A (ja) * | 1999-01-27 | 2000-08-11 | Internatl Business Mach Corp <Ibm> | レジスト組成物、および基板上にパタ―ン形成したレジスト層を形成する方法 |
WO2004076535A1 (ja) * | 2003-02-26 | 2004-09-10 | Tokyo Ohka Kogyo Co., Ltd. | シルセスキオキサン樹脂、ポジ型レジスト組成物、レジスト積層体及びレジストパターン形成方法 |
JP2005134456A (ja) * | 2003-10-28 | 2005-05-26 | Jsr Corp | 感放射線性樹脂組成物 |
JP2005221714A (ja) * | 2004-02-05 | 2005-08-18 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2006133712A (ja) * | 2004-10-08 | 2006-05-25 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2006309245A (ja) * | 2005-05-01 | 2006-11-09 | Rohm & Haas Electronic Materials Llc | 液浸リソグラフィーのための組成物および方法 |
JP2007016177A (ja) * | 2005-07-08 | 2007-01-25 | Fujitsu Ltd | シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000076531A (ko) | 1999-01-28 | 2000-12-26 | 무네유키 가코우 | 포지티브형 실리콘 함유의 감광성 조성물 |
JP4270708B2 (ja) * | 1999-04-23 | 2009-06-03 | 富士通株式会社 | ケイ素含有ポリマ、その製造方法、それを用いたレジスト組成物、パターン形成方法および電子デバイスの製造方法 |
JP4317772B2 (ja) * | 2004-02-20 | 2009-08-19 | 富士フイルム株式会社 | 液浸露光用レジスト組成物及びそれを用いたパターン形成方法 |
JP4198631B2 (ja) * | 2004-04-28 | 2008-12-17 | 富士通マイクロエレクトロニクス株式会社 | 絶縁膜形成方法及び半導体装置 |
JP2006301524A (ja) | 2005-04-25 | 2006-11-02 | Tokyo Ohka Kogyo Co Ltd | 保護膜形成用材料およびこれを用いたレジストパターン形成方法 |
JP4568668B2 (ja) | 2005-09-22 | 2010-10-27 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4739150B2 (ja) * | 2006-08-30 | 2011-08-03 | 富士通株式会社 | レジストカバー膜形成材料、レジストパターンの形成方法、電子デバイス及びその製造方法 |
-
2007
- 2007-03-14 WO PCT/JP2007/055145 patent/WO2008111203A1/ja active Application Filing
- 2007-09-28 WO PCT/JP2007/069052 patent/WO2008111251A1/ja active Application Filing
-
2009
- 2009-09-10 US US12/557,211 patent/US8652751B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000221686A (ja) * | 1999-01-27 | 2000-08-11 | Internatl Business Mach Corp <Ibm> | レジスト組成物、および基板上にパタ―ン形成したレジスト層を形成する方法 |
JP2000221685A (ja) * | 1999-01-28 | 2000-08-11 | Fuji Photo Film Co Ltd | ポジ型シリコーン含有感光性組成物 |
WO2004076535A1 (ja) * | 2003-02-26 | 2004-09-10 | Tokyo Ohka Kogyo Co., Ltd. | シルセスキオキサン樹脂、ポジ型レジスト組成物、レジスト積層体及びレジストパターン形成方法 |
JP2005134456A (ja) * | 2003-10-28 | 2005-05-26 | Jsr Corp | 感放射線性樹脂組成物 |
JP2005221714A (ja) * | 2004-02-05 | 2005-08-18 | Shin Etsu Chem Co Ltd | レジスト材料及びパターン形成方法 |
JP2006133712A (ja) * | 2004-10-08 | 2006-05-25 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP2006309245A (ja) * | 2005-05-01 | 2006-11-09 | Rohm & Haas Electronic Materials Llc | 液浸リソグラフィーのための組成物および方法 |
JP2007016177A (ja) * | 2005-07-08 | 2007-01-25 | Fujitsu Ltd | シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100047711A1 (en) | 2010-02-25 |
WO2008111251A1 (ja) | 2008-09-18 |
US8652751B2 (en) | 2014-02-18 |
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