WO2008108299A1 - 窒化物半導体素子および窒化物半導体素子の製造方法 - Google Patents

窒化物半導体素子および窒化物半導体素子の製造方法 Download PDF

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Publication number
WO2008108299A1
WO2008108299A1 PCT/JP2008/053666 JP2008053666W WO2008108299A1 WO 2008108299 A1 WO2008108299 A1 WO 2008108299A1 JP 2008053666 W JP2008053666 W JP 2008053666W WO 2008108299 A1 WO2008108299 A1 WO 2008108299A1
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WIPO (PCT)
Prior art keywords
nitride semiconductor
layer
semiconductor device
wall surface
insulating film
Prior art date
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Ceased
Application number
PCT/JP2008/053666
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English (en)
French (fr)
Inventor
Hirotaka Otake
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Rohm Co Ltd
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Rohm Co Ltd
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Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2008108299A1 publication Critical patent/WO2008108299A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)

Abstract

　本発明の窒化物半導体素子は、III族窒化物半導体からなる、ｎ型の第１層、この第１層に積層されたｐ型不純物を含む第２層、およびこの第２層に積層されたｎ型の第３層を備え、前記第１、第２および第３層に跨る壁面を有する窒化物半導体積層構造部と、 　前記壁面およびこの壁面に連続する前記第１層の露出面に、前記第１、第２および第３層に跨るように、かつ、前記壁面に接する第１部分より前記第１層の露出面に接する第２部分が厚くなるように、形成されたゲート絶縁膜と、 　前記ゲート絶縁膜を挟んで前記第２層における前記壁面に対向するように形成されたゲート電極と、を含む。
PCT/JP2008/053666 2007-03-06 2008-02-29 窒化物半導体素子および窒化物半導体素子の製造方法 Ceased WO2008108299A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007056428A JP2008218846A (ja) 2007-03-06 2007-03-06 窒化物半導体素子および窒化物半導体素子の製造方法
JP2007-056428 2007-03-06

Publications (1)

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WO2008108299A1 true WO2008108299A1 (ja) 2008-09-12

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PCT/JP2008/053666 Ceased WO2008108299A1 (ja) 2007-03-06 2008-02-29 窒化物半導体素子および窒化物半導体素子の製造方法

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JP (1) JP2008218846A (ja)
WO (1) WO2008108299A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021078450A1 (de) * 2019-10-21 2021-04-29 Robert Bosch Gmbh Vertikaler feldeffekttransistor und verfahren zum ausbilden desselben
EP3761374A4 (en) * 2018-03-01 2021-11-17 Tamura Corporation TRENCH-MOS-SCHOTTKY DIODE AND MANUFACTURING PROCESS FOR IT

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311489A (ja) * 2007-06-15 2008-12-25 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法
DE102009018054B4 (de) * 2009-04-21 2018-11-29 Infineon Technologies Austria Ag Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
JP2012169470A (ja) * 2011-02-15 2012-09-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP6693142B2 (ja) * 2016-01-21 2020-05-13 ソニー株式会社 半導体装置、電子部品、電子機器、および半導体装置の製造方法

Citations (9)

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JPS6222482A (ja) * 1985-07-22 1987-01-30 Oki Electric Ind Co Ltd 半導体素子およびその製造方法
JPH07326755A (ja) * 1994-04-06 1995-12-12 Nippondenso Co Ltd 半導体装置及びその製造方法
JPH10150188A (ja) * 1996-11-15 1998-06-02 Nec Corp 半導体装置の製造方法
JP2000208760A (ja) * 1999-01-13 2000-07-28 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP2001102576A (ja) * 1999-09-29 2001-04-13 Sanyo Electric Co Ltd 半導体装置
JP2003163354A (ja) * 2001-11-27 2003-06-06 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
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JP2006245317A (ja) * 2005-03-03 2006-09-14 Fujitsu Ltd 半導体装置およびその製造方法

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JPH04296056A (ja) * 1991-03-25 1992-10-20 Mitsubishi Electric Corp 電界効果トランジスタ
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JPH07326755A (ja) * 1994-04-06 1995-12-12 Nippondenso Co Ltd 半導体装置及びその製造方法
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JP2001102576A (ja) * 1999-09-29 2001-04-13 Sanyo Electric Co Ltd 半導体装置
JP2003163354A (ja) * 2001-11-27 2003-06-06 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP2005183597A (ja) * 2003-12-18 2005-07-07 Nec Corp 窒化物半導体ｍｉｓ型電界効果トランジスタ
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3761374A4 (en) * 2018-03-01 2021-11-17 Tamura Corporation TRENCH-MOS-SCHOTTKY DIODE AND MANUFACTURING PROCESS FOR IT
US11456388B2 (en) 2018-03-01 2022-09-27 Tamura Corporation Trench MOS schottky diode and method for producing same
WO2021078450A1 (de) * 2019-10-21 2021-04-29 Robert Bosch Gmbh Vertikaler feldeffekttransistor und verfahren zum ausbilden desselben
CN114586174A (zh) * 2019-10-21 2022-06-03 罗伯特·博世有限公司 垂直场效应晶体管和用于其构造的方法
JP2022553305A (ja) * 2019-10-21 2022-12-22 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 縦型電界効果トランジスタとその形成方法
JP7397978B2 (ja) 2019-10-21 2023-12-13 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 縦型電界効果トランジスタとその形成方法
US12211939B2 (en) 2019-10-21 2025-01-28 Robert Bosch Gmbh Vertical field-effect transistor and method for forming same
CN114586174B (zh) * 2019-10-21 2026-02-03 罗伯特·博世有限公司 垂直场效应晶体管和用于其构造的方法

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