WO2008107963A1 - 光半導体素子 - Google Patents

光半導体素子 Download PDF

Info

Publication number
WO2008107963A1
WO2008107963A1 PCT/JP2007/054207 JP2007054207W WO2008107963A1 WO 2008107963 A1 WO2008107963 A1 WO 2008107963A1 JP 2007054207 W JP2007054207 W JP 2007054207W WO 2008107963 A1 WO2008107963 A1 WO 2008107963A1
Authority
WO
WIPO (PCT)
Prior art keywords
photocoupler
semiconductor element
optical semiconductor
semiconductor laser
waveguides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/054207
Other languages
English (en)
French (fr)
Inventor
Akinori Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009502380A priority Critical patent/JP4983910B2/ja
Priority to PCT/JP2007/054207 priority patent/WO2008107963A1/ja
Publication of WO2008107963A1 publication Critical patent/WO2008107963A1/ja
Priority to US12/554,568 priority patent/US7983318B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
    • G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29304—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by diffraction, e.g. grating
    • G02B6/29316—Light guides comprising a diffractive element, e.g. grating in or on the light guide such that diffracted light is confined in the light guide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

　光半導体素子を、同一基板上に、半導体レーザ（１１）と、第１光導波路（１２Ａ）と、半導体レーザから第１光導波路を介して導かれた光を２つに分岐する光結合器（１３）と、２つの第２光導波路（１２Ｂ，１２Ｃ）と、２つの第２光導波路のそれぞれに設けられた回折格子（１４，１５）と、２つの回折格子の一方を介して導かれた光を検出する光検出器（１６）とを備えるものとし、各回折格子側から半導体レーザ側への反射戻り光が光結合器で干渉するように、各回折格子側からの反射戻り光の位相が光結合器部分でπずれるように構成する。
PCT/JP2007/054207 2007-03-05 2007-03-05 光半導体素子 Ceased WO2008107963A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009502380A JP4983910B2 (ja) 2007-03-05 2007-03-05 光半導体素子
PCT/JP2007/054207 WO2008107963A1 (ja) 2007-03-05 2007-03-05 光半導体素子
US12/554,568 US7983318B2 (en) 2007-03-05 2009-09-04 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/054207 WO2008107963A1 (ja) 2007-03-05 2007-03-05 光半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/554,568 Continuation US7983318B2 (en) 2007-03-05 2009-09-04 Optical semiconductor device

Publications (1)

Publication Number Publication Date
WO2008107963A1 true WO2008107963A1 (ja) 2008-09-12

Family

ID=39737868

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/054207 Ceased WO2008107963A1 (ja) 2007-03-05 2007-03-05 光半導体素子

Country Status (3)

Country Link
US (1) US7983318B2 (ja)
JP (1) JP4983910B2 (ja)
WO (1) WO2008107963A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041454A1 (ja) * 2008-10-10 2010-04-15 日本電気株式会社 光ジョイント
JP2014006439A (ja) * 2012-06-26 2014-01-16 Nippon Telegr & Teleph Corp <Ntt> 半導体波長可変フィルタ及び半導体波長可変レーザ
JP2014075387A (ja) * 2012-10-02 2014-04-24 Mitsubishi Electric Corp 光集積素子
JP2014154835A (ja) * 2013-02-13 2014-08-25 Nippon Telegr & Teleph Corp <Ntt> 光送信器
WO2014156885A1 (ja) 2013-03-25 2014-10-02 技術研究組合光電子融合基盤技術研究所 光回路
JP2016152253A (ja) * 2015-02-16 2016-08-22 日本電信電話株式会社 半導体レーザ素子
JP6892040B1 (ja) * 2020-11-24 2021-06-18 三菱電機株式会社 光半導体装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8295663B2 (en) * 2007-03-23 2012-10-23 Kyushu University, National University Corporation Super-luminescent light emitting diode
CN103755130A (zh) * 2009-10-09 2014-04-30 帝斯曼知识产权资产管理有限公司 多层膜压延法
KR101295896B1 (ko) * 2009-12-17 2013-08-12 한국전자통신연구원 레이저 소자
KR101783621B1 (ko) 2011-09-09 2017-10-11 삼성전자주식회사 광 연결 장치, 이의 제조 방법, 및 상기 광 연결 장치를 포함하는 메모리 시스템
US9739940B2 (en) 2015-03-12 2017-08-22 Medlumics S.L. Bidirectional photonic integrated circuit with suppressed reflection
US10514584B2 (en) 2017-08-10 2019-12-24 Sicoya Gmbh Optical signal generator comprising a phase shifter
JP7385158B2 (ja) * 2020-05-25 2023-11-22 日本電信電話株式会社 波長可変レーザダイオード
WO2023041171A1 (en) * 2021-09-17 2023-03-23 Huawei Technologies Co., Ltd. Distributed feedback laser with integrated mpd

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160391A (ja) * 1986-12-24 1988-07-04 Toshiba Corp 分布帰還型半導体レ−ザ装置
JPH04186690A (ja) * 1990-11-16 1992-07-03 Canon Inc 光集積型波長可変半導体レーザ装置
JP2006080412A (ja) * 2004-09-13 2006-03-23 Sony Corp レーザシステム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6795622B2 (en) * 1998-06-24 2004-09-21 The Trustess Of Princeton University Photonic integrated circuits
JP3788232B2 (ja) 2000-12-13 2006-06-21 日本電気株式会社 波長可変光送信器、その出力制御方法並及び光通信システム
KR100576712B1 (ko) * 2003-12-15 2006-05-03 한국전자통신연구원 3ｄＢ 광 분배기를 가진 이중 파장 레이저 광원을 이용한초고주파 광원 소자 및 그 제작방법
JP2006216695A (ja) 2005-02-02 2006-08-17 Furukawa Electric Co Ltd:The 半導体レーザモジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160391A (ja) * 1986-12-24 1988-07-04 Toshiba Corp 分布帰還型半導体レ−ザ装置
JPH04186690A (ja) * 1990-11-16 1992-07-03 Canon Inc 光集積型波長可変半導体レーザ装置
JP2006080412A (ja) * 2004-09-13 2006-03-23 Sony Corp レーザシステム

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041454A1 (ja) * 2008-10-10 2010-04-15 日本電気株式会社 光ジョイント
US8433164B2 (en) 2008-10-10 2013-04-30 Nec Corporation Optical joint
JP5440506B2 (ja) * 2008-10-10 2014-03-12 日本電気株式会社 光ジョイント
JP2014006439A (ja) * 2012-06-26 2014-01-16 Nippon Telegr & Teleph Corp <Ntt> 半導体波長可変フィルタ及び半導体波長可変レーザ
JP2014075387A (ja) * 2012-10-02 2014-04-24 Mitsubishi Electric Corp 光集積素子
JP2014154835A (ja) * 2013-02-13 2014-08-25 Nippon Telegr & Teleph Corp <Ntt> 光送信器
WO2014156885A1 (ja) 2013-03-25 2014-10-02 技術研究組合光電子融合基盤技術研究所 光回路
EP2980618A4 (en) * 2013-03-25 2016-12-07 Photonics Electronics Technology Res Ass OPTICAL SWITCHING
US9519115B2 (en) 2013-03-25 2016-12-13 Photonics Electronics Technology Research Association Optical circuit
JPWO2014156885A1 (ja) * 2013-03-25 2017-02-16 技術研究組合光電子融合基盤技術研究所 光回路
JP2016152253A (ja) * 2015-02-16 2016-08-22 日本電信電話株式会社 半導体レーザ素子
JP6892040B1 (ja) * 2020-11-24 2021-06-18 三菱電機株式会社 光半導体装置
WO2022113165A1 (ja) * 2020-11-24 2022-06-02 三菱電機株式会社 光半導体装置

Also Published As

Publication number Publication date
US7983318B2 (en) 2011-07-19
JPWO2008107963A1 (ja) 2010-06-03
US20100020840A1 (en) 2010-01-28
JP4983910B2 (ja) 2012-07-25

Similar Documents

Publication Publication Date Title
WO2008107963A1 (ja) 光半導体素子
WO2009150373A3 (fr) Dispositif de couplage entre une fibre optique et un composant nanophotonique
Gao et al. Silicon nitride O-band (de) multiplexers with low thermal sensitivity
Chen et al. Compact monolithically-integrated hybrid (de) multiplexer based on silicon-on-insulator nanowires for PDM-WDM systems
CN102099718B (zh) 光波长合分波回路
EP2062076B1 (en) Method and system for grating taps for monitoring a dwdm transmitter array integrated on a plc platform
TW200640097A (en) Tunable laser, optical module, and control method thereof
TW200717031A (en) Polarization conversion element, polarization conversion optical system and image projecting apparatus
WO2007120991A3 (en) Waveguide device having improved spatial filter configurations
WO2005008296A3 (en) Optical coupling for whispering-gallery-mode resonators via waveguide gratings
WO2007087301A3 (en) Interferometer system for monitoring an object
Liu et al. First demonstration of an on-chip quadplexer for passive optical network systems
WO2011056817A3 (en) Optical device for wavelength locking
WO2009003969A3 (en) Waveguide coupling probe and methods for manufacturing same
WO2014156885A1 (ja) 光回路
JP2013168440A5 (ja)
WO2008084584A1 (ja) 光導波路素子および偏光分離方法
WO2007008727A3 (en) System and method for high power laser processing
WO2001040744A3 (en) Transverse integrated optic interferometer
GB2488424A (en) Optical transceiver separating incoming and outgoing signals of same wavelength
WO2007014125A3 (en) Optical wavelength division coupler and associated methods
WO2005070166A3 (en) Method and system for optically tracking a target using an interferometric technique
Zou et al. Novel High‐Resolution and Large‐Bandwidth Micro‐Spectrometer Using Multi‐Input Counter‐Propagating Arrayed Waveguide Grating and Dual‐Wavelength Grating Coupler on Silicon on Insulator
Ibrahim et al. Design of a photonic integrated based optical interrogator
US20120070113A1 (en) Optical module and manufacturing method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07737782

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009502380

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07737782

Country of ref document: EP

Kind code of ref document: A1