WO2008107029A1 - Procédé de collage de deux substrats - Google Patents
Procédé de collage de deux substrats Download PDFInfo
- Publication number
- WO2008107029A1 WO2008107029A1 PCT/EP2007/062750 EP2007062750W WO2008107029A1 WO 2008107029 A1 WO2008107029 A1 WO 2008107029A1 EP 2007062750 W EP2007062750 W EP 2007062750W WO 2008107029 A1 WO2008107029 A1 WO 2008107029A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrates
- bonding
- cleaning
- bath
- bonded
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 168
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000004140 cleaning Methods 0.000 claims abstract description 98
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 238000002513 implantation Methods 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910052734 helium Inorganic materials 0.000 claims description 32
- 239000001307 helium Substances 0.000 claims description 32
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 32
- 239000001257 hydrogen Substances 0.000 claims description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 238000000678 plasma activation Methods 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 26
- 239000010410 layer Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 206010000496 acne Diseases 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000004026 adhesive bonding Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010070 molecular adhesion Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003042 antagnostic effect Effects 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Definitions
- the present invention relates to the production of composite structures for electronics, optics or microelectronics.
- the invention relates to a method of bonding two substrates together.
- the invention also relates to a method for forming a structure comprising a semiconductor material layer taken from a donor substrate, said donor substrate having itself been constituted by bonding two substrates.
- a first substrate is typically brought into contact with a second substrate in such a way as to bond the substrates together by molecular adhesion.
- an application of such a bonding is that which is made in the context of the realization of structures of the type "semiconductor on insulator” (in English, “Semiconductor On Insulator,” (SeOI)), and in particular the structures of the Silicon On Insulator (SOI) type.
- at least one of the substrates to be bonded has an oxide layer on the surface; for example, Si / SiO 2 bonding or SiO 2 / SiO 2 bonding is typically performed to form an SOI structure.
- Molecular adhesion bonding is a technique that makes it possible to adhere two substrates having perfectly flat surfaces (“mirror-polish”) to one another without applying an adhesive (glue, glue, etc.). .
- the surfaces in question are generally those of substrates of electrically insulating material (quartz, glass, for example) or semiconductor material (Si, GaAs, SiC, Ge, for example).
- the bonding is typically initiated by local application of slight pressure on one or both substrates contacted.
- a bonding wave then propagates over the whole extent of the substrates in a few seconds, to bring the two substrates closer to the atomic scale.
- the bonding energy obtained at room temperature is generally quite low compared to that observed between two covalently bonded solids, ionic or metallic.
- Such a preparation typically involves a chemical treatment - called cleaning - of the surfaces of the substrates to be bonded.
- the cleaning aims in particular to provide one or more of the following properties for the surfaces to be bonded:
- a high hydrophilicity that is to say a high density of silanol bonds (Si-OH bonds) ending the surfaces to be bonded.
- RCA-type cleaning namely the combination of an SC1 bath (in English, "Standard Clean 1") comprising ammonium hydroxide
- the control of the various cleaning parameters makes it possible to prevent the appearance of certain defects at the bonding interface of the bonded structure.
- Figure 1 shows, schematically, a sectional view of an SOI with a pin.
- the layers transferred on the receiving substrate have a hole diameter typically between 50 ⁇ m and 2mm, located 1 -5mm from the edge of the structure.
- the pins are thus macroscopic defects related to bad bonding at the edge of the substrates. These are serious defects and generally prohibitive. Indeed, in the absence of a thin layer serving as an active layer for the formation of electronic components in the location of a pin, no component can be manufactured at this location. Given the size of the pins, an electronic component comprising at least one pin is necessarily defective.
- “Blister” type defects correspond to a local detachment between the transferred thin layer and the receiving substrate.
- the bonding of an Si receptor substrate on an oxidized and implanted donor substrate may lead to the observation of blisters on the structure obtained after transfer. These blisters result from the local detachment between the recipient silicon and the oxide of the transferred thin layer, as is schematized in FIG. 2.
- This local detachment is favored by any particles, traces of hydrocarbons, or irregularities in the surface. surface (locally higher micro-roughness) on the surface of one and / or two substrates contacted.
- the blisters created at the bonding interface between the donor substrate and the receiving substrate can expand during the detachment annealing that involves such a transfer, this can damage the useful layer of the final structure obtained after the transfer.
- the blisters can be located in the center as in the periphery of the structure.
- the blisters are thus macroscopic defects, circular in diameter typically between 0.1 mm and 3 mm, after a transfer of thin layer.
- Blisters are in such a case unacceptable defects for an SOI.
- the cleaning preparation step therefore involves finding a compromise (particularly with regard to the temperature at which the cleaning is carried out before bonding) in order to obtain a bonding interface at which one will observe more or less blisters and pimples.
- the present invention proposes to overcome the aforementioned problems, and in particular to eliminate the need for a compromise in the definition of the conditions (temperature in particular) of cleaning, to predict the appearance of pin-like defects and the appearance of blister-type defects at the bonding interface between two substrates.
- the invention proposes a method for bonding two substrates together during which the surfaces of said substrates are brought into contact, comprising at least one step of cleaning the surface of one of the substrates. and / or the other of the substrates to be bonded before contacting their surfaces, characterized in that the cleaning step is carried out in such a way that each cleaned surface is slightly roughened, and in that the bonding is further preceded by heating at least one substrate to be bonded, said heating being initiated prior to contacting the surfaces of the substrates and extended at least until they are brought into contact.
- Preferred but nonlimiting aspects of this method are the following: the heating ends at the latest at the end of the propagation of the bonding wave between the two substrates;
- the cleaning of the surfaces of one and / or the other of the substrates to be bonded involves an etching which leads to an increase in the roughness of the etched surface of between 0 and 20%;
- the cleaning step of one and / or the other of the substrates to be bonded involves an etching having a thickness of less than 15 Angstroms;
- the cleaning step is carried out by means of a bath at a temperature below 65 ° C .;
- the cleaning step is carried out using a bath based on NH 4 OH, H 2 O 2 , H 2 O, or a bath based on NH 4 OH, H 2 O 2 , H 2 O followed by a bath based on HCl, H 2 O 2 , H 2 O, or using an ozone bath followed by a bath based on NH 4 OH, H 2 O 2 , H 2 O followed by a bath based on HCl, H 2 O 2 , H 2 O, or using a bath of sulfuric acid and hydrogen peroxide followed by a bath based on NH 4 OH, H 2 O 2 , H 2 O followed by a bath based on HCl, H 2 O 2 , H 2 O; the cleaning step is carried out using dry ozone followed by a bath based on NH 4 OH, H 2 O 2 , H 2 O, followed by a bath based on HCl, H 2 O 2; , H 2 O; the process may comprise a plasma activation step carried out
- the plasma is based on O 2 and / or N 2 ; the plasma leads to a reduction in the roughness of one and / or the other of said substrates to be bonded;
- the temperature of the bath based on NH 4 OH, H 2 O 2 , H 2 O is less than 65 ° C;
- the bath based on NH 4 OH, H 2 O 2 , H 2 O: - has a mass percentage distribution of NH 4 OH / H 2 O 2 typically between 1/2 and 6/6 and preferably between 1/2 2 and 3/4,
- - is at a temperature between 5 ° C and 60 0 C, preferably between 40 0 C and 55 ° C - is applied for a few minutes, preferably three minutes;
- the heating is applied locally at a peripheral zone of at least one of the two substrates to be bonded, or applied uniformly over the extent of at least one of the two substrates to be glued and is conducted at a temperature between 35 ° C and 90 ° C, typically between 45 ° C and 70 ° C; -
- the heating is obtained by thermal conduction or radiation.
- Another object of the invention relates to a method for forming a structure comprising a thin layer of transferred semiconductor material a donor substrate on a second substrate, the method comprising the steps of:
- the method being characterized in that the two atomic species are implanted so that their peaks have an offset of less than 200; ⁇ in the thickness of the donor substrate, and in that the bonding is carried out according to the bonding method described above.
- the peaks of the two atomic species which are advantageously hydrogen and helium, are aligned at the same depth of the donor substrate.
- the implantation energy of hydrogen in a silicon donor substrate covered with a 1450 ⁇ oxide layer is chosen at 32 keV so that the peak of implantation of the hydrogen is located at a depth of 2450 ⁇ in the donor substrate and the helium implantation energy is between 47 and 50 keV, preferably 49 keV.
- FIG. 3 illustrates the occurrence of blisters (solid lines) and spikes (dashed lines) as a function of the temperature of the SC1 bath;
- FIGS. 4a and 4b illustrate the propagation of the bonding wave according to whether the bonding is initiated from the center of the structure (FIG. 4a) or from the edge of the structure (FIG. 4b), the peripheral region in which are expected the possible pins are represented by dots;
- FIG. 5 illustrates a mapping of the temperature on a silicon substrate of diameter equal to 300 mm, after fifteen seconds of local heating in the upper part of the substrate in the case where the pins are expected in this part because of a bonding initiated in the lower part of this substrate;
- FIG. 6 illustrates helium peaks offset and aligned with the hydrogen peak
- FIG. 7 represents the distribution of "dense zone” type defects according to three compared process options
- FIGS. 8A to 8C illustrate the presence of a dense zone by superposing the defect mapping observed on typically 25 superimposed plates under different implantation and cleaning conditions.
- the invention relates to a method of bonding two substrates together.
- the invention aims in particular to overcome the compromise related to the appearance of blisters and pimples and mentioned above.
- the Applicant has started from the observation that the occurrence of blister-type defects can be reduced by modifying the parameters of the baths used for cleaning the surfaces to be bonded.
- FIG. 3 schematically illustrates the principle of such a compromise, the occurrence of blisters (solid lines) and spikes (dashed lines) is shown as a function of the temperature of the bath SC1.
- Such cleaning conditions must thus produce cleaned surfaces which have a roughness and thickness "almost" unchanged by the cleaning due to the low etching.
- the low degradation of one and / or the other of the substrates to be bonded is typically obtained by means of a bath SC1 at a low temperature, typically below 65 ° C. More generally, it will be possible to implement any type of cleaning to ensure that the cleaning step is performed so that each cleaned surface has at the end of cleaning a roughness unchanged by cleaning or in the worst cases increased by 20% from its value before the cleaning step.
- the roughness is measured by AFM (atomic force microscope) on surfaces of 10x10 ⁇ m 2. The roughening can then be evaluated by comparing the roughness after and before cleaning.
- control of the propagation velocity of the bonding wave) of the substrates by means of heating of one and / or the other of the substrates to be bonded.
- the Applicant has developed a method for reducing the occurrence of pins, based on controlling the speed of propagation of the bonding wave by heating of one and / or the other of the substrates to be bonded.
- the term "slightly roughened” reflects an increase in roughness which is limited. More specifically, this typically corresponds to an increase in the roughness of the cleaned surface which is between 0 and 20%.
- the heating ends at the latest at the end of the propagation of the bonding wave between the two substrates. It is specified that the heating is not necessarily applied to the entire surface of one and / or the other of the substrates but may be limited to a specific region thereof. The heating can thus be advantageously restricted to a limited surface of the substrate and in particular to the peripheral region capable of concealing pin-like defects.
- the cleaning of one and / or the other of the substrates to be bonded can be implemented by combining one or more baths.
- the baths used during the cleaning step lead to an increase in the roughness of the surfaces of one and / or the other of the substrates to be bonded between 0 and 20% and to an etching of thickness less than 15 Angstroms .
- Cleaning leading to such results is cleaning performed at a temperature below 65 ° C.
- a cleaning comprising an SC1 bath (mixture based on NH 4 OH, H 2 O 2 , H 2 O) is applied.
- the SC1 bath may especially be practiced at a temperature between 5 ° C and 60 0 C (typically 40 ° C-55 ° C), for a few minutes (typically three minutes), with relatively low concentrations.
- the concentration of NH 4 OH / H 2 O 2 (expressed as a percentage by weight) of the SC1 bath is typically between 1/2 and 6/6. These mass percentage dosages are preferably equal to 1/2 or 3/4.
- Such cleaning using an SC1 bath typically leads to etching of about 5-15 Angstroms on a thermal oxide weakened by the ion implantation necessary for the formation of such SOI.
- the SC1 bath may be preceded by an ozone bath, an SPM (mixture based on H 2 SO 4 / H 2 O 2 ) or a cleaning based on dry ozone (UV atmosphere / O3) in particular to remove organic contaminations.
- the bath SC1 can also be advantageously followed by an SC2 bath practiced at low temperature (typically 30 ° C.), of low concentration (expressed as mass percentage), typically 0.3 - 2% for HCl and 0.3 - 2% for H 2 O 2 (the rest is water) for a period of about three minutes.
- low temperature typically 30 ° C.
- concentration typically 0.3 - 2% for HCl and 0.3 - 2% for H 2 O 2 (the rest is water) for a period of about three minutes.
- one and / or the other of the two substrates to be bonded and cleaned can also undergo a plasma activation treatment, preferably a plasma of O 2 and / or N 2 .
- the plasma activation step can also be seen as a smooth-cleaning dry-cleaning step and thus corresponds to an additional cleaning step. Its use leads to an improvement of the surface state of one and / or the other of said substrates to be bonded.
- cleaning is a succession of steps. According to the invention it is the set of cleaning steps that must satisfy the roughness constraints of the surfaces to be bonded. It should be noted that, preferably, this plasma activation treatment is performed between the cleaning and the actual bonding, but can also be practiced before the SC1 bath to remove organic contamination.
- the temperature range which makes it possible to eliminate the spikes extends from 35 ° C. to 90 ° C., typically 45 ° C.-70 ° C.
- the substrates are glued to a temperature too high, the bonding will not be effective.
- the collage can even in some cases be impossible.
- the bonding is in practice carried out without applying glue or other glue. It is the water adsorbed on each of the surfaces (a few monolayers of water) brought into contact which serves as adhesive and ensures the adhesion of the two substrates in contact via Van der Waals forces.
- the bonding wave is unable to spread correctly on the surface of one and / or the other of the substrates to be bonded. It is therefore appropriate to use the lowest temperature for heating allowing the disappearance of the pins, so as not to drop the energy of bonding, which would not fail to reveal other defects (eg blisters after transfer of the thin layer).
- it is not useful to heat the entire surface of one and / or the other of the two substrates to be bonded. It is possible to heat one.
- the bonding of the two substrates is initiated from the edge, it is possible to heat only the edge diametrically opposed to this point.
- the critical zone of appearance of the pins is heated without impacting the rest of the bonding by promoting the propagation of the bonding wave over the rest of the surface of the substrates to be bonded.
- Figures 4a and 4b illustrate the propagation of the bonding wave according to whether the bonding of the two substrates is initiated from the center (see Figure 5a) of the surface or from the edge (see Figure 5b).
- the local heating or the totality of one or more substrates can be achieved for example by thermal conduction (for example by contact with a support that transmits its heat) or by radiation (for example a halogen lamp illuminating all or part of the substrate (s) to be heated).
- the area where the pins may appear must remain at the desired temperature until the surfaces are glued in this area.
- the duration of heating depends greatly on the device used to raise and then control the temperature of the heated zone. For example, using a halogen lamp delivering a power of 500
- the typical heating time is between 15 seconds and 90 seconds (this range of times strongly depends on the distance between the substrates and the lamp).
- the opposite edge is preferably the hottest point having a temperature of about 50 0 vs.
- the maximum temperature measured on one and / or the other of the substrates reaches a value close to 70 ° C.
- FIG. 5 shows a temperature map on a silicon substrate of diameter equal to 300 mm, after 15 seconds of local heating in the case where the spikes are expected in the upper part of the substrate due to a collage initiated in the lower part of this substrate.
- the method of the invention makes it possible to achieve a better quality bonding in the context of the formation of an SOI.
- this method thus makes it possible to avoid pimples and blisters simultaneously (macroscopic defects often unacceptable) implying a gain in yield and quality of the structures obtained.
- an embrittlement zone by implantation of atomic or ionic species in the thickness of the donor substrate, and is carried out after bonding, the detachment of the donor substrate at the level of the weakening zone so as to transfer the thin layer onto a second substrate.
- Offset means a difference in depth within the donor substrate.
- the z axis is perpendicular to the surface of the donor substrate in the direction of increasing thickness, the origin being at the substrate surface on the implanted side.
- the offset between the peaks is represented by the double arrow D.
- the dense zone induces a "low frequency” roughness, highlighted in particular by AFM (atomic force microscopy) on fields of size 30x30 ⁇ m 2 , or 40x40 ⁇ m 2 .
- This defectivity can also be measured by means of a "haze” measurement carried out using a Surfscan-type instrument.
- a typical value of the inspection threshold on Surfscan SP2 equipment to evaluate the dense zone is 90 nm.
- the roughness of the dense zone on the one hand limits the inspection threshold of the plate and on the other hand signifies a degradation of the quality of the surface. We therefore seek to limit the formation of this type of defect.
- the Applicant has carried out measurements on the dense zone after the application of the process according to the invention to a structure in which the donor substrate has undergone co-implantation of helium and hydrogen with the helium peak. offset in the thickness of the donor substrate relative to the hydrogen peak. She found that cleaning with a SC1 bath at low temperatures has a favorable effect on blister formation, but unfavorable for the extent of the dense zone.
- the Applicant has found that by aligning the implantation peaks of hydrogen and helium to a depth substantially identical in the thickness of the donor substrate and performing a low temperature cleaning in accordance with the invention, it limits the formation of blisters, and also reduces the dense area.
- the formation of spikes is, in turn, limited by heating during gluing.
- substantially identical depth is meant an identical depth of the two peaks or a depth shift of hydrogen and helium peaks less than 200 °.
- the combination of the alignment of the hydrogen and helium peaks with the low temperature cleaning not only prevents the formation of blisters but also reduces the defectivity of the dense zone on the final SOI.
- the implantation energy of the hydrogen is chosen as a function of the depth of implantation - and consequently of the thickness of the thin layer to be transferred - desired.
- the determination of this energy which also depends on the substrate to be implanted, is within the abilities of those skilled in the art.
- the energy of implantation of helium is then defined so as to obtain a helium peak aligned with that of hydrogen, or having an offset of less than 200 ° relative to the hydrogen peak.
- the peaks of hydrogen and helium have different shapes: the hydrogen peak (H) is relatively narrow while that of helium (He) is larger .
- a silicon donor substrate coated with a 1450 A oxide layer hydrogen and helium are co-implanted, the energy of the hydrogen being selected at 32 keV so that the implantation peak is at a depth of 2450 A.
- a helium implantation energy of the order of 52 keV which induces a peak shift of the order of 500 A.
- the defectivity of the dense zone is typically greater than 200 defects on a 300 mm diameter wafer, these defects being measured at the threshold of 90 nm ( case B of Figure 7).
- the helium implantation energy is reduced to a value between 47 and 50 keV, preferably 49 keV.
- the defectivity of the dense zone is then of the order of 80 defects on a slice of diameter 300 mm, always measured at the threshold of 90 nm (case A of Figure 7).
- the defectivity of the dense zone is order of 80 defects (case C of Figure 7).
- FIG. 8A shows the presence of the dense zone ZD on a plate of SOI having undergone co-implantation of hydrogen and helium with the aligned peaks (the energy of implantation of the helium being 49 keV), and cleaning before bonding in an SC1 bath at 55 ° C.
- FIG. 8B illustrates the dense zone ZD on a plate having undergone co-implantation of helium and hydrogen with offset peaks (the helium implantation energy being 52 keV), and a cleaning before bonding in an SC1 bath at 55 ° C. This dense area is much larger than in the previous case.
- FIG. 8C shows the dense zone on a plate having undergone co-implantation of helium and hydrogen with offset peaks (the helium implantation energy being 52 keV), and a cleaning before bonding in SC1 bath at 65 ° C.
- the method of the invention leads to substrates having a low roughness before bonding, resulting in a stronger bonding and bonding interface easier to stabilize thereafter.
- the method according to the invention finally makes it possible to overcome the pimples / blisters compromise encountered by varying the temperature of the SC1 bath during the cleaning of one and / or the other of the substrates to be bonded.
- the receiving substrate Si is less sensitive to cleaning (less easily etched and / or roughened).
- the typical roughness of such a receiving substrate, measured by AFM on surfaces of 10 ⁇ 10 ⁇ m 2 is less than or equal to 1 Angstrom RMS.
- the donor substrate consisting of silicon oxidized on the surface and then implanted by co-implantation of helium and hydrogen, for example, is much easier to roughen and etched by cleaning because it is weakened by implantation.
- the SOI is obtained according to the Smart Cut TM process with short-term local heating:
- the SOI structure is obtained according to the method
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007800511541A CN101601123B (zh) | 2007-02-16 | 2007-11-23 | 键合两个衬底的方法 |
US12/525,493 US8349703B2 (en) | 2007-02-16 | 2007-11-23 | Method of bonding two substrates |
KR1020097016685A KR101265506B1 (ko) | 2007-02-16 | 2007-11-23 | 두 기판들의 접합 방법 |
EP07847300A EP2115768B1 (fr) | 2007-02-16 | 2007-11-23 | Procede de collage de deux substrats |
JP2009549362A JP5349333B2 (ja) | 2007-02-16 | 2007-11-23 | 2枚の基板を接合する方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0753318A FR2912839B1 (fr) | 2007-02-16 | 2007-02-16 | Amelioration de la qualite de l'interface de collage par nettoyage froid et collage a chaud |
FR0753318 | 2007-02-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008107029A1 true WO2008107029A1 (fr) | 2008-09-12 |
Family
ID=38474455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2007/062750 WO2008107029A1 (fr) | 2007-02-16 | 2007-11-23 | Procédé de collage de deux substrats |
Country Status (7)
Country | Link |
---|---|
US (2) | US7645682B2 (fr) |
EP (1) | EP2115768B1 (fr) |
JP (1) | JP5349333B2 (fr) |
KR (1) | KR101265506B1 (fr) |
CN (1) | CN101601123B (fr) |
FR (1) | FR2912839B1 (fr) |
WO (1) | WO2008107029A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100273329A1 (en) * | 2009-04-28 | 2010-10-28 | Twin Creeks Technologies, Inc. | Method for preparing a donor surface for reuse |
FR3103629A1 (fr) | 2019-11-25 | 2021-05-28 | Soitec | Procédé de collage de deux substrats |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2935536B1 (fr) * | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
EP2200077B1 (fr) * | 2008-12-22 | 2012-12-05 | Soitec | Procédé pour la liaison de deux substrats |
MY162903A (en) | 2010-06-04 | 2017-07-31 | Abraxis Bioscience Llc | Methods of treatment of pancreatic cancer |
FR2961630B1 (fr) | 2010-06-22 | 2013-03-29 | Soitec Silicon On Insulator Technologies | Appareil de fabrication de dispositifs semi-conducteurs |
US8338266B2 (en) | 2010-08-11 | 2012-12-25 | Soitec | Method for molecular adhesion bonding at low pressure |
FR2964193A1 (fr) | 2010-08-24 | 2012-03-02 | Soitec Silicon On Insulator | Procede de mesure d'une energie d'adhesion, et substrats associes |
JP2012054451A (ja) * | 2010-09-02 | 2012-03-15 | Shin Etsu Chem Co Ltd | 貼り合わせ基板の製造方法および半導体基板洗浄液 |
FR2965974B1 (fr) * | 2010-10-12 | 2013-11-29 | Soitec Silicon On Insulator | Procédé de collage moléculaire de substrats en silicium et en verre |
CN102064090B (zh) * | 2010-10-15 | 2013-01-09 | 北京通美晶体技术有限公司 | 化合物半导体晶片清洗方法 |
TWI500118B (zh) * | 2010-11-12 | 2015-09-11 | Semiconductor Energy Lab | 半導體基底之製造方法 |
KR101503027B1 (ko) * | 2010-11-19 | 2015-03-18 | 한국전자통신연구원 | 웨이퍼 접합방법 |
FR2981941B1 (fr) * | 2011-10-26 | 2014-06-06 | Commissariat Energie Atomique | Procede de traitement et de collage direct d'une couche de materiau |
FR2990054B1 (fr) * | 2012-04-27 | 2014-05-02 | Commissariat Energie Atomique | Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif. |
FR2991099B1 (fr) | 2012-05-25 | 2014-05-23 | Soitec Silicon On Insulator | Procede de traitement d'une structure semi-conducteur sur isolant en vue d'uniformiser l'epaisseur de la couche semi-conductrice |
US11315813B2 (en) | 2015-04-10 | 2022-04-26 | Ev Group E. Thallner Gmbh | Substrate holder and method for bonding two substrates |
FR3036223B1 (fr) | 2015-05-11 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de collage direct de substrats avec amincissement des bords d'au moins un des deux substrats |
CN106409650B (zh) * | 2015-08-03 | 2019-01-29 | 沈阳硅基科技有限公司 | 一种硅片直接键合方法 |
CN114300347A (zh) | 2016-02-16 | 2022-04-08 | Ev 集团 E·索尔纳有限责任公司 | 用于接合衬底的方法 |
KR102494914B1 (ko) | 2016-02-16 | 2023-02-01 | 에베 그룹 에. 탈너 게엠베하 | 기판을 접합하기 위한 방법 및 장치 |
KR20230087612A (ko) | 2016-09-29 | 2023-06-16 | 에베 그룹 에. 탈너 게엠베하 | 2개의 기판을 접합하기 위한 장치 및 방법 |
JP6558355B2 (ja) * | 2016-12-19 | 2019-08-14 | 信越半導体株式会社 | Soiウェーハの製造方法 |
KR102624841B1 (ko) * | 2017-03-02 | 2024-01-15 | 에베 그룹 에. 탈너 게엠베하 | 칩들을 본딩하기 위한 방법 및 디바이스 |
WO2019209492A1 (fr) * | 2018-04-27 | 2019-10-31 | Globalwafers Co., Ltd. | Formation de plaquettes assistée par la lumière facilitant le transfert de couche à partir d'un substrat donneur semi-conducteur |
FR3094563A1 (fr) * | 2019-03-29 | 2020-10-02 | Soitec | Procede de fabrication d’un substrat de type semi-conducteur sur isolant |
CN110718453B (zh) * | 2019-11-15 | 2021-08-20 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
CN113105105B (zh) * | 2020-01-13 | 2022-10-14 | 维达力实业(赤壁)有限公司 | 玻璃熔接方法及复合玻璃器件 |
US20220048762A1 (en) * | 2020-08-14 | 2022-02-17 | Beijing Voyager Technology Co., Ltd. | Void reduction on wafer bonding interface |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0969500A2 (fr) * | 1998-06-10 | 2000-01-05 | Lucent Technologies Inc. | Circuits intégrés de silicium monocristallin sur silicium polycristallin |
US20040262686A1 (en) * | 2003-06-26 | 2004-12-30 | Mohamad Shaheen | Layer transfer technique |
FR2868599A1 (fr) * | 2004-03-30 | 2005-10-07 | Soitec Silicon On Insulator | Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur |
FR2884966A1 (fr) * | 2005-04-22 | 2006-10-27 | Soitec Silicon On Insulator | Procede de collage de deux tranches realisees dans des materiaux choisis parmi les materiaux semiconducteurs |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5223168A (en) * | 1989-12-12 | 1993-06-29 | Gary Holt | Surface cleaner and treatment |
JPH05166689A (ja) * | 1991-11-19 | 1993-07-02 | Sumitomo Metal Mining Co Ltd | 半導体基板の接合方法 |
DE69426789T2 (de) * | 1993-04-28 | 2001-08-02 | Matsushita Electric Ind Co Ltd | Akustische Oberflächenwellenanordnung und Herstellungsverfahren dafür |
TW437078B (en) * | 1998-02-18 | 2001-05-28 | Canon Kk | Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof |
JP3385972B2 (ja) * | 1998-07-10 | 2003-03-10 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
FR2823596B1 (fr) * | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
JP4628580B2 (ja) * | 2001-04-18 | 2011-02-09 | 信越半導体株式会社 | 貼り合せ基板の製造方法 |
US6562127B1 (en) * | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
JP4016701B2 (ja) * | 2002-04-18 | 2007-12-05 | 信越半導体株式会社 | 貼り合せ基板の製造方法 |
CN1529343A (zh) * | 2003-10-13 | 2004-09-15 | 华中科技大学 | 一种基于金锡共晶的硅/硅键合方法 |
US7772087B2 (en) * | 2003-12-19 | 2010-08-10 | Commissariat A L'energie Atomique | Method of catastrophic transfer of a thin film after co-implantation |
JP2005217142A (ja) * | 2004-01-29 | 2005-08-11 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
WO2006032947A1 (fr) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Procede de transfert de couche mince dans lequel une etape de co-implantation est executee selon des conditions evitant la formation de bulles et limitant la rugosite |
FR2888663B1 (fr) * | 2005-07-13 | 2008-04-18 | Soitec Silicon On Insulator | Procede de diminution de la rugosite d'une couche epaisse d'isolant |
US20070090479A1 (en) * | 2005-10-20 | 2007-04-26 | Chien-Hua Chen | Controlling bond fronts in wafer-scale packaging |
US7601271B2 (en) * | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
US7456080B2 (en) * | 2005-12-19 | 2008-11-25 | Corning Incorporated | Semiconductor on glass insulator made using improved ion implantation process |
US7598153B2 (en) * | 2006-03-31 | 2009-10-06 | Silicon Genesis Corporation | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
-
2007
- 2007-02-16 FR FR0753318A patent/FR2912839B1/fr active Active
- 2007-10-16 US US11/873,311 patent/US7645682B2/en active Active
- 2007-11-23 JP JP2009549362A patent/JP5349333B2/ja active Active
- 2007-11-23 KR KR1020097016685A patent/KR101265506B1/ko active IP Right Grant
- 2007-11-23 EP EP07847300A patent/EP2115768B1/fr active Active
- 2007-11-23 WO PCT/EP2007/062750 patent/WO2008107029A1/fr active Application Filing
- 2007-11-23 CN CN2007800511541A patent/CN101601123B/zh active Active
- 2007-11-23 US US12/525,493 patent/US8349703B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0969500A2 (fr) * | 1998-06-10 | 2000-01-05 | Lucent Technologies Inc. | Circuits intégrés de silicium monocristallin sur silicium polycristallin |
US20040262686A1 (en) * | 2003-06-26 | 2004-12-30 | Mohamad Shaheen | Layer transfer technique |
FR2868599A1 (fr) * | 2004-03-30 | 2005-10-07 | Soitec Silicon On Insulator | Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur |
FR2884966A1 (fr) * | 2005-04-22 | 2006-10-27 | Soitec Silicon On Insulator | Procede de collage de deux tranches realisees dans des materiaux choisis parmi les materiaux semiconducteurs |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100273329A1 (en) * | 2009-04-28 | 2010-10-28 | Twin Creeks Technologies, Inc. | Method for preparing a donor surface for reuse |
US8871109B2 (en) * | 2009-04-28 | 2014-10-28 | Gtat Corporation | Method for preparing a donor surface for reuse |
FR3103629A1 (fr) | 2019-11-25 | 2021-05-28 | Soitec | Procédé de collage de deux substrats |
WO2021105605A1 (fr) | 2019-11-25 | 2021-06-03 | Soitec | Procede de collage de deux substrats |
Also Published As
Publication number | Publication date |
---|---|
US20100093152A1 (en) | 2010-04-15 |
US7645682B2 (en) | 2010-01-12 |
US8349703B2 (en) | 2013-01-08 |
KR101265506B1 (ko) | 2013-05-20 |
US20080200008A1 (en) | 2008-08-21 |
EP2115768A1 (fr) | 2009-11-11 |
JP2010518639A (ja) | 2010-05-27 |
FR2912839B1 (fr) | 2009-05-15 |
CN101601123B (zh) | 2010-12-22 |
KR20090111838A (ko) | 2009-10-27 |
CN101601123A (zh) | 2009-12-09 |
FR2912839A1 (fr) | 2008-08-22 |
JP5349333B2 (ja) | 2013-11-20 |
EP2115768B1 (fr) | 2012-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2115768B1 (fr) | Procede de collage de deux substrats | |
EP1208593B1 (fr) | Procede de traitement de substrats pour la micro-electronique | |
EP2073260B1 (fr) | Procédé de transfer d'une couche mince | |
FR2903808A1 (fr) | Procede de collage direct de deux substrats utilises en electronique, optique ou opto-electronique | |
EP2764535B1 (fr) | Procédé de double report de couche | |
FR2938202A1 (fr) | Traitement de surface pour adhesion moleculaire | |
EP1902463A1 (fr) | Procede de diminution de la rugosite d'une couche epaisse d'isolant | |
FR2938702A1 (fr) | Preparation de surface d'un substrat saphir pour la realisation d'heterostructures | |
WO2008031980A1 (fr) | Procede de transfert d'une couche a haute temperature | |
FR2938975A1 (fr) | Procede de realisation d'une heterostructure de type silicium sur saphir | |
FR2938119A1 (fr) | Procede de detachement de couches semi-conductrices a basse temperature | |
FR2938118A1 (fr) | Procede de fabrication d'un empilement de couches minces semi-conductrices | |
EP1473765B1 (fr) | Traitement par brossage d'une plaquette semiconductrice avant collage | |
FR2968121A1 (fr) | Procede de transfert d'une couche a haute temperature | |
EP4088309B1 (fr) | Procede d'assemblage de deux substrats semi-conducteurs | |
EP4000090B1 (fr) | Procédé de collage hydrophile de substrats | |
FR2918792A1 (fr) | Procede de traitement de defauts d'interface dans un substrat. | |
EP3939078A1 (fr) | Procede de transfert d'une couche utile sur une substrat support | |
FR2894067A1 (fr) | Procede de collage par adhesion moleculaire | |
FR2880186A1 (fr) | Procede de traitement d'une surface de plaquette | |
WO2023186595A1 (fr) | Procede de transfert d'une couche mince sur un substrat support | |
WO2023151852A1 (fr) | Procede de transfert d'une couche mince sur un substrat support | |
EP3939077A1 (fr) | Procede de transfert d'une couche utile sur un substrat support | |
WO2023144496A1 (fr) | Procédé de fabrication d'une structure de type double semi-conducteur sur isolant | |
FR2915624A1 (fr) | Procedes de collage et de fabrication d'un substrat du type a couche enterree tres fine. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200780051154.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07847300 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2009549362 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12525493 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020097016685 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007847300 Country of ref document: EP |