WO2008102596A1 - 半導体表面温度測定方法及びその装置 - Google Patents

半導体表面温度測定方法及びその装置 Download PDF

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Publication number
WO2008102596A1
WO2008102596A1 PCT/JP2008/050947 JP2008050947W WO2008102596A1 WO 2008102596 A1 WO2008102596 A1 WO 2008102596A1 JP 2008050947 W JP2008050947 W JP 2008050947W WO 2008102596 A1 WO2008102596 A1 WO 2008102596A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
heat treatment
treatment apparatus
semiconductor surface
measuring temperature
Prior art date
Application number
PCT/JP2008/050947
Other languages
English (en)
French (fr)
Inventor
Yoshiro Yamada
Juntaro Ishii
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007322272A external-priority patent/JP2008235858A/ja
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Publication of WO2008102596A1 publication Critical patent/WO2008102596A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • G01J5/602—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature using selective, monochromatic or bandpass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Abstract

　熱処理装置内で半導体の表層をランプにより高速加熱し、放射温度計を用いて半導体の表層の温度を測定する場合において、熱処理装置に配置した半導体基板の鉛直方向に対して対称位置にある熱処理装置の側壁又は天板に２個の無反射ポートを設け、一方のポートの外側に放射温度計を配置することを特徴とする半導体表面温度測定方法及びその装置である。
PCT/JP2008/050947 2007-02-20 2008-01-24 半導体表面温度測定方法及びその装置 WO2008102596A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007039279 2007-02-20
JP2007-039279 2007-02-20
JP2007322272A JP2008235858A (ja) 2007-02-20 2007-12-13 半導体表面温度測定方法及びその装置
JP2007-322272 2007-12-13

Publications (1)

Publication Number Publication Date
WO2008102596A1 true WO2008102596A1 (ja) 2008-08-28

Family

ID=39709875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050947 WO2008102596A1 (ja) 2007-02-20 2008-01-24 半導体表面温度測定方法及びその装置

Country Status (1)

Country Link
WO (1) WO2008102596A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4111494A4 (en) * 2020-02-28 2024-04-17 Mattson Tech Inc TRANSMISSION TEMPERATURE MEASUREMENT OF A PART IN A HEAT TREATMENT SYSTEM

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577530A (en) * 1980-06-17 1982-01-14 Nippon Steel Corp Method of measuring surface temperature of object
JPS62140036A (ja) * 1985-12-13 1987-06-23 Minolta Camera Co Ltd 放射温度計
JPH02254328A (ja) * 1989-03-28 1990-10-15 Sumitomo Metal Ind Ltd 温度測定方法
JPH09246200A (ja) * 1996-03-12 1997-09-19 Shin Etsu Handotai Co Ltd 熱処理方法および輻射加熱装置
JP2001102276A (ja) * 1999-09-27 2001-04-13 Toshiba Corp 基板加熱装置及び基板加熱方法
JP2001514441A (ja) * 1997-08-27 2001-09-11 シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 急速熱処理（ｒｔｐ）システムにおける改善された温度制御のための方法および装置
JP2005527972A (ja) * 2002-03-29 2005-09-15 マットソン、テクノロジー、インコーポレーテッド 加熱源の組み合わせを使用する半導体パルス加熱処理方法
JP2006505946A (ja) * 2002-11-05 2006-02-16 マットソン テクノロジイ インコーポレイテッド 基板処理チャンバーにおいて迷光を減少させる装置と方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577530A (en) * 1980-06-17 1982-01-14 Nippon Steel Corp Method of measuring surface temperature of object
JPS62140036A (ja) * 1985-12-13 1987-06-23 Minolta Camera Co Ltd 放射温度計
JPH02254328A (ja) * 1989-03-28 1990-10-15 Sumitomo Metal Ind Ltd 温度測定方法
JPH09246200A (ja) * 1996-03-12 1997-09-19 Shin Etsu Handotai Co Ltd 熱処理方法および輻射加熱装置
JP2001514441A (ja) * 1997-08-27 2001-09-11 シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 急速熱処理（ｒｔｐ）システムにおける改善された温度制御のための方法および装置
JP2001102276A (ja) * 1999-09-27 2001-04-13 Toshiba Corp 基板加熱装置及び基板加熱方法
JP2005527972A (ja) * 2002-03-29 2005-09-15 マットソン、テクノロジー、インコーポレーテッド 加熱源の組み合わせを使用する半導体パルス加熱処理方法
JP2006505946A (ja) * 2002-11-05 2006-02-16 マットソン テクノロジイ インコーポレイテッド 基板処理チャンバーにおいて迷光を減少させる装置と方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4111494A4 (en) * 2020-02-28 2024-04-17 Mattson Tech Inc TRANSMISSION TEMPERATURE MEASUREMENT OF A PART IN A HEAT TREATMENT SYSTEM

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