TW200731481A - Heating method of TFT substrate, temperature measuring method of TFT substrate and temperature controlling method of TFT substrate - Google Patents

Heating method of TFT substrate, temperature measuring method of TFT substrate and temperature controlling method of TFT substrate

Info

Publication number
TW200731481A
TW200731481A TW095105005A TW95105005A TW200731481A TW 200731481 A TW200731481 A TW 200731481A TW 095105005 A TW095105005 A TW 095105005A TW 95105005 A TW95105005 A TW 95105005A TW 200731481 A TW200731481 A TW 200731481A
Authority
TW
Taiwan
Prior art keywords
tft substrate
temperature
pattern
resistance film
substrate
Prior art date
Application number
TW095105005A
Other languages
Chinese (zh)
Other versions
TWI301313B (en
Inventor
Katsutoyo Osanai
Jun Matsuhashi
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Publication of TW200731481A publication Critical patent/TW200731481A/en
Application granted granted Critical
Publication of TWI301313B publication Critical patent/TWI301313B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/183—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer characterised by the use of the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/0288—Applications for non specified applications
    • H05B1/0294—Planar elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Control Of Resistance Heating (AREA)
  • Liquid Crystal (AREA)

Abstract

A heating method of TFT substrate, a temperature measuring method of TFT substrate and a temperature controlling method of TFT substrate are provided. The heating method of TFT substrate includes: a pattern of resistance film, which is disposed on one side of the TFT substrate, the pattern of resistance film serves as a heat source by applying a voltage thereon to flow a current. The temperature distribution of the substrate became the same and the heating efficiency is enhanced by directly heating the substrate using the heat source. The temperature measuring method of TFT substrate includes: a pattern of resistance film, which is disposed on one side of the TFT substrate; a voltage, which is applied on the pattern of resistance film to flow a current, and the voltage and the current flowed in the pattern of resistance film are measured. The temperature of the pattern of resistance film is calculated according to the relationship of the applied voltage, the measured current and a temperature coefficient that shows a relationship of a change of resistance for the pattern of resistance film to a change of temperature, and the calculated temperature of the pattern of resistance film is measured as the temperature of the substrate. Therefore, the temperature can be measured without a temperature sensor for measuring the temperature of the substrate.
TW095105005A 2006-02-07 2006-02-15 Heating method of tft substrate, temperature measuring method of tft substrate and temperature controlling method of tft substrate TWI301313B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/302021 WO2007091299A1 (en) 2006-02-07 2006-02-07 Method for heating tft substrate, temperature measuring method for tft substrate, and temperature control method for tft substrate

Publications (2)

Publication Number Publication Date
TW200731481A true TW200731481A (en) 2007-08-16
TWI301313B TWI301313B (en) 2008-09-21

Family

ID=38344907

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105005A TWI301313B (en) 2006-02-07 2006-02-15 Heating method of tft substrate, temperature measuring method of tft substrate and temperature controlling method of tft substrate

Country Status (3)

Country Link
JP (1) JPWO2007091299A1 (en)
TW (1) TWI301313B (en)
WO (1) WO2007091299A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104795339A (en) * 2015-03-09 2015-07-22 昆山龙腾光电有限公司 Detection device and method for thin-film transistor array substrate
CN112835243A (en) * 2019-11-22 2021-05-25 北京开阳亮微科技有限公司 Electrochromic device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4521433B2 (en) * 2007-09-18 2010-08-11 シャープ株式会社 Semiconductor element and device using the semiconductor element
JP4521434B2 (en) * 2007-09-18 2010-08-11 シャープ株式会社 Semiconductor element and device using the semiconductor element
CN102112848B (en) 2008-08-01 2016-08-10 Nxp股份有限公司 By the stress sensing ambient parameter of sensing in IC
US8702307B2 (en) * 2008-09-05 2014-04-22 American Panel Corporation Method for determining internal LCD temperature
CN104406708B (en) * 2014-10-27 2017-03-29 福耀玻璃工业集团股份有限公司 The temperature measurement system and method for electrically heated glass
US9826574B2 (en) * 2015-10-28 2017-11-21 Watlow Electric Manufacturing Company Integrated heater and sensor system
US10188015B2 (en) 2016-09-20 2019-01-22 Qualcomm Incorporated Hybrid design of heat spreader and temperature sensor for direct handheld device skin temperature measurement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289520A (en) * 2001-03-23 2002-10-04 Japan Science & Technology Corp Pulse energization thermal treatment method by thin film heat generator and thermal treatment device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104795339A (en) * 2015-03-09 2015-07-22 昆山龙腾光电有限公司 Detection device and method for thin-film transistor array substrate
CN104795339B (en) * 2015-03-09 2017-10-20 昆山龙腾光电有限公司 The detection means and detection method of thin-film transistor array base-plate
CN112835243A (en) * 2019-11-22 2021-05-25 北京开阳亮微科技有限公司 Electrochromic device
CN112835243B (en) * 2019-11-22 2022-12-02 北京开阳亮微科技有限公司 Electrochromic device

Also Published As

Publication number Publication date
WO2007091299A1 (en) 2007-08-16
JPWO2007091299A1 (en) 2009-06-25
TWI301313B (en) 2008-09-21

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees