WO2008093573A1 - 半導体レーザ - Google Patents

半導体レーザ Download PDF

Info

Publication number
WO2008093573A1
WO2008093573A1 PCT/JP2008/050850 JP2008050850W WO2008093573A1 WO 2008093573 A1 WO2008093573 A1 WO 2008093573A1 JP 2008050850 W JP2008050850 W JP 2008050850W WO 2008093573 A1 WO2008093573 A1 WO 2008093573A1
Authority
WO
WIPO (PCT)
Prior art keywords
face
side end
axis side
axis
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/050850
Other languages
English (en)
French (fr)
Inventor
Kuniyoshi Okamoto
Hiroaki Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2008093573A1 publication Critical patent/WO2008093573A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

　この半導体レーザは、ｃ面以外の結晶面を結晶成長主面とした六方晶構造のIII族窒化物半導体からなるファブリペロー型半導体レーザである。この半導体レーザは、ｃ軸と交差する平面に平行な＋ｃ軸側端面および－ｃ軸側端面を有し、＋ｃ軸側端面からのレーザ出力が、－ｃ軸側端面からのレーザ出力よりも大きくなるようにして、前記＋ｃ軸側端面をレーザ出射端面としてある。ｃ軸の前記結晶成長主面への投影ベクトルに平行に導波路が形成されていることが好ましい。また、前記結晶成長主面がｍ面であることが好ましい。さらに、前記＋ｃ軸側端面が＋ｃ面であり、前記－ｃ軸側端面が－ｃ面であることが好ましい。
PCT/JP2008/050850 2007-01-30 2008-01-23 半導体レーザ Ceased WO2008093573A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-019915 2007-01-30
JP2007019915A JP2008187044A (ja) 2007-01-30 2007-01-30 半導体レーザ

Publications (1)

Publication Number Publication Date
WO2008093573A1 true WO2008093573A1 (ja) 2008-08-07

Family

ID=39673885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050850 Ceased WO2008093573A1 (ja) 2007-01-30 2008-01-23 半導体レーザ

Country Status (3)

Country Link
JP (1) JP2008187044A (ja)
TW (1) TW200845524A (ja)
WO (1) WO2008093573A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056282A (ja) * 2008-08-28 2010-03-11 Tohoku Univ 窒化物半導体発光素子およびその製造方法
WO2010100699A1 (ja) * 2009-03-06 2010-09-10 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
CN102668279A (zh) * 2009-12-25 2012-09-12 住友电气工业株式会社 Iii族氮化物半导体激光器元件及制作iii族氮化物半导体激光器元件的方法
CN102696158A (zh) * 2010-01-07 2012-09-26 住友电气工业株式会社 Iii族氮化物半导体激光器元件、制作iii族氮化物半导体激光器元件的方法及评估因形成刻划槽所致损伤的方法
EP2518840A4 (en) * 2009-12-25 2014-12-31 Sumitomo Electric Industries GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND EPITAXIAL SUBSTRATE
EP2518841A4 (en) * 2009-12-25 2014-12-31 Sumitomo Electric Industries GROUP III NITRIDE SEMI-CONDUCTIVE LASER ELEMENT, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMI-CONDUCTIVE LASER ELEMENT

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123920A (ja) * 2008-10-20 2010-06-03 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
JP5387302B2 (ja) * 2009-09-30 2014-01-15 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5397136B2 (ja) * 2009-09-30 2014-01-22 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5365679B2 (ja) * 2009-12-25 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5348216B2 (ja) * 2011-10-20 2013-11-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5348217B2 (ja) * 2011-10-20 2013-11-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216497A (ja) * 1999-01-22 2000-08-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2001156383A (ja) * 1999-09-16 2001-06-08 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2001217506A (ja) * 2000-02-03 2001-08-10 Ricoh Co Ltd 半導体基板およびその作製方法および発光素子
JP2005531154A (ja) * 2002-06-26 2005-10-13 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物半導体レーザ素子及びその性能を向上させる方法
JP2006245564A (ja) * 2005-02-07 2006-09-14 Matsushita Electric Ind Co Ltd 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216497A (ja) * 1999-01-22 2000-08-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2001156383A (ja) * 1999-09-16 2001-06-08 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2001217506A (ja) * 2000-02-03 2001-08-10 Ricoh Co Ltd 半導体基板およびその作製方法および発光素子
JP2005531154A (ja) * 2002-06-26 2005-10-13 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物半導体レーザ素子及びその性能を向上させる方法
JP2006245564A (ja) * 2005-02-07 2006-09-14 Matsushita Electric Ind Co Ltd 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056282A (ja) * 2008-08-28 2010-03-11 Tohoku Univ 窒化物半導体発光素子およびその製造方法
WO2010100699A1 (ja) * 2009-03-06 2010-09-10 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
JPWO2010100699A1 (ja) * 2009-03-06 2012-09-06 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
CN102668279A (zh) * 2009-12-25 2012-09-12 住友电气工业株式会社 Iii族氮化物半导体激光器元件及制作iii族氮化物半导体激光器元件的方法
CN102668279B (zh) * 2009-12-25 2014-09-10 住友电气工业株式会社 Iii族氮化物半导体激光器元件及制作iii族氮化物半导体激光器元件的方法
EP2518840A4 (en) * 2009-12-25 2014-12-31 Sumitomo Electric Industries GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND EPITAXIAL SUBSTRATE
EP2518841A4 (en) * 2009-12-25 2014-12-31 Sumitomo Electric Industries GROUP III NITRIDE SEMI-CONDUCTIVE LASER ELEMENT, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMI-CONDUCTIVE LASER ELEMENT
CN102696158A (zh) * 2010-01-07 2012-09-26 住友电气工业株式会社 Iii族氮化物半导体激光器元件、制作iii族氮化物半导体激光器元件的方法及评估因形成刻划槽所致损伤的方法

Also Published As

Publication number Publication date
JP2008187044A (ja) 2008-08-14
TW200845524A (en) 2008-11-16

Similar Documents

Publication Publication Date Title
WO2008093573A1 (ja) 半導体レーザ
Bienstock et al. Using mixed-integer programming to solve power grid blackout problems
USD643718S1 (en) Full offset-circular aperture can
WO2009114805A3 (en) System, devices and methods for coupling qubits
WO2013095482A3 (en) Refractive polarization converter and polarized color combiner
WO2011146407A3 (en) Tunable pulse width laser
WO2010033494A3 (en) Compositions, methods, devices, and systems for skin care
WO2010148364A3 (en) Solver-based visualization framework
WO2009137703A3 (en) High brightness diode output methods and devices
EP2413440A3 (en) High-stability light source system and method of manufacturing
WO2009069282A1 (ja) 波長変換レーザ
WO2014049157A3 (fr) Composant photovoltaique a fort rendement de conversion
WO2007053579A3 (en) Short-wavelength polarizing elements and the manufacture and use thereof
WO2010104909A3 (en) Plasmonic polarizer
WO2012028950A3 (en) Photovoltaic junction for a solar cell
WO2011050179A3 (en) Optoelectronic semiconductor device and method of fabrication
WO2012012144A3 (en) Systems and methods for implementing reduced power states
AR074627A1 (es) Resinas de melamina urea formaldehido estables durante el almacenamiento y aplicaciones de las mismas
WO2012075130A3 (en) Stable free radical chromophores and mixtures thereof, processes for preparing the same, nonlinear optic materials, and uses thereof in nonlinear optical applications
WO2012138595A3 (en) Light duct tee splitter
WO2010117743A3 (en) Management of rechargeable battery in an enclosed lighting module
WO2009151488A3 (en) Conversion device with multi-faceted output face and laser projection system incorporating the same
Adak et al. Complexity in a predator-prey-parasite model with nonlinear incidence rate and incubation delay
EA201100570A1 (ru) Способ пиролиза углеводов
WO2013015906A3 (en) 2-pattern compound photonic crystals with a large, complete photonic band gap

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08703694

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08703694

Country of ref document: EP

Kind code of ref document: A1