WO2008091010A1 - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

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Publication number
WO2008091010A1
WO2008091010A1 PCT/JP2008/051201 JP2008051201W WO2008091010A1 WO 2008091010 A1 WO2008091010 A1 WO 2008091010A1 JP 2008051201 W JP2008051201 W JP 2008051201W WO 2008091010 A1 WO2008091010 A1 WO 2008091010A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting device
transparent conductive
semiconductor substrate
compound semiconductor
Prior art date
Application number
PCT/JP2008/051201
Other languages
English (en)
French (fr)
Inventor
Yukari Suzuki
Jun Ikeda
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to CN2008800028565A priority Critical patent/CN101589479B/zh
Priority to US12/524,118 priority patent/US8008671B2/en
Priority to JP2008555124A priority patent/JP4973888B2/ja
Publication of WO2008091010A1 publication Critical patent/WO2008091010A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

発光層部２４を有したＩＩＩ－Ｖ族化合物半導体よりなる主化合物半導体５０層の一方の主表面に、透明導電性半導体基板７０を直接貼り合わせた構造を有するとともに、主化合物半導体層５０と透明導電性半導体基板７０との貼り合せ界面のアルカリ金属原子濃度を１×１０１４ａｔｏｍｓ／ｃｍ２以上２×１０１５ａｔｏｍｓ／ｃｍ２以下に調整する。これにより、発光層部と透明導電性半導体基板との界面抵抗を十分に低減できる発光素子を提供する。
PCT/JP2008/051201 2007-01-26 2008-01-28 発光素子及びその製造方法 WO2008091010A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800028565A CN101589479B (zh) 2007-01-26 2008-01-28 发光元件及其制造方法
US12/524,118 US8008671B2 (en) 2007-01-26 2008-01-28 Light-emitting device and method for fabricating the same
JP2008555124A JP4973888B2 (ja) 2007-01-26 2008-01-28 発光素子及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007016690 2007-01-26
JP2007-016690 2007-01-26

Publications (1)

Publication Number Publication Date
WO2008091010A1 true WO2008091010A1 (ja) 2008-07-31

Family

ID=39644579

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051201 WO2008091010A1 (ja) 2007-01-26 2008-01-28 発光素子及びその製造方法

Country Status (5)

Country Link
US (1) US8008671B2 (ja)
JP (1) JP4973888B2 (ja)
CN (1) CN101589479B (ja)
TW (1) TWI394294B (ja)
WO (1) WO2008091010A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087360A (ja) * 2008-10-01 2010-04-15 Kyoto Institute Of Technology 半導体基板の製造方法および半導体基板
WO2012111379A1 (ja) * 2011-02-15 2012-08-23 住友電気工業株式会社 半導体デバイスおよびその製造方法
JP2021153186A (ja) * 2018-12-12 2021-09-30 晶元光電股▲ふん▼有限公司Epistar Corporation 半導体素子を選択的にトランスファーする方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010020092A1 (en) * 2008-08-20 2010-02-25 Acm Research (Shanghai) Inc. Barrier layer removal method and apparatus
CN103811626A (zh) * 2012-11-12 2014-05-21 天津中环新光科技有限公司 带有高反射率金属反射层的红光发光二极管及制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259912A (ja) * 2004-03-10 2005-09-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法
JP2006253298A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体発光素子及び半導体発光装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502458B (en) * 1999-06-09 2002-09-11 Toshiba Corp Bonding type semiconductor substrate, semiconductor light emission element and manufacturing method thereof
JP3977572B2 (ja) * 1999-06-09 2007-09-19 株式会社東芝 接着型半導体基板および半導体発光素子並びにこれらの製造方法
JP4316157B2 (ja) * 2001-05-10 2009-08-19 株式会社東芝 化合物半導体素子の製造方法及びウェハ接着装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259912A (ja) * 2004-03-10 2005-09-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法
JP2006253298A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体発光素子及び半導体発光装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087360A (ja) * 2008-10-01 2010-04-15 Kyoto Institute Of Technology 半導体基板の製造方法および半導体基板
WO2012111379A1 (ja) * 2011-02-15 2012-08-23 住友電気工業株式会社 半導体デバイスおよびその製造方法
JP2012169481A (ja) * 2011-02-15 2012-09-06 Sumitomo Electric Ind Ltd 半導体デバイスおよびその製造方法
US8884306B2 (en) 2011-02-15 2014-11-11 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same
JP2021153186A (ja) * 2018-12-12 2021-09-30 晶元光電股▲ふん▼有限公司Epistar Corporation 半導体素子を選択的にトランスファーする方法
JP7179121B2 (ja) 2018-12-12 2022-11-28 晶元光電股▲ふん▼有限公司 半導体素子を選択的にトランスファーする方法

Also Published As

Publication number Publication date
JP4973888B2 (ja) 2012-07-11
US20100032688A1 (en) 2010-02-11
US8008671B2 (en) 2011-08-30
CN101589479A (zh) 2009-11-25
TW200832767A (en) 2008-08-01
JPWO2008091010A1 (ja) 2010-05-20
CN101589479B (zh) 2011-06-22
TWI394294B (zh) 2013-04-21

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