WO2008089728A3 - Leuchtdiodenchip mit metallischer spiegelschicht, durchkontaktierung, tunnelkontakt und ladungsträgerreservoir - Google Patents

Leuchtdiodenchip mit metallischer spiegelschicht, durchkontaktierung, tunnelkontakt und ladungsträgerreservoir Download PDF

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Publication number
WO2008089728A3
WO2008089728A3 PCT/DE2008/000081 DE2008000081W WO2008089728A3 WO 2008089728 A3 WO2008089728 A3 WO 2008089728A3 DE 2008000081 W DE2008000081 W DE 2008000081W WO 2008089728 A3 WO2008089728 A3 WO 2008089728A3
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WO
WIPO (PCT)
Prior art keywords
contact
light
emitting diode
diode chip
reflective layer
Prior art date
Application number
PCT/DE2008/000081
Other languages
English (en)
French (fr)
Other versions
WO2008089728A2 (de
Inventor
Matthias Sabathil
Lutz Hoeppel
Christoph Eichler
Karl Engl
Matthias Peter
Martin Strassburg
Original Assignee
Osram Opto Semiconductors Gmbh
Matthias Sabathil
Lutz Hoeppel
Christoph Eichler
Karl Engl
Matthias Peter
Martin Strassburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Matthias Sabathil, Lutz Hoeppel, Christoph Eichler, Karl Engl, Matthias Peter, Martin Strassburg filed Critical Osram Opto Semiconductors Gmbh
Priority to KR1020147022923A priority Critical patent/KR101476966B1/ko
Priority to EP08700869.4A priority patent/EP2130235B1/de
Priority to KR1020097017467A priority patent/KR101476863B1/ko
Priority to CN2008800029939A priority patent/CN101601141B/zh
Publication of WO2008089728A2 publication Critical patent/WO2008089728A2/de
Publication of WO2008089728A3 publication Critical patent/WO2008089728A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Es wird ein Leuchtdiodenchip mit einer Schichtenfolge (10) angegeben, die mindestens eine n-leitende Schicht aufweist. Der Leuchtdiodenchip weist eine leitend mit der n-leitenden Schicht (31) verbundene Spiegelschicht (5) auf. Zwischen der n-leitenden Schicht und der Spiegelschicht ist mindestens eine transparente dielektrische Schicht (4) angeordnet.
PCT/DE2008/000081 2007-01-23 2008-01-17 Leuchtdiodenchip mit metallischer spiegelschicht, durchkontaktierung, tunnelkontakt und ladungsträgerreservoir WO2008089728A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020147022923A KR101476966B1 (ko) 2007-01-23 2008-01-17 금속 반사층，관통 접촉，터널 접촉 및 전하 캐리어 접촉을 가진 발광 다이오드칩
EP08700869.4A EP2130235B1 (de) 2007-01-23 2008-01-17 Leuchtdiodenchip mit metallischer spiegelschicht, durchkontaktierung, tunnelkontakt und ladungsträgerreservoir
KR1020097017467A KR101476863B1 (ko) 2007-01-23 2008-01-17 금속 반사층，관통 접촉，터널 접촉 및 전하 캐리어 접촉을 가진 발광 다이오드칩
CN2008800029939A CN101601141B (zh) 2007-01-23 2008-01-17 带有金属反射层、穿通接触部、隧道接触和载流子储存装置的发光二极管芯片

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007003282.1 2007-01-23
DE102007003282.1A DE102007003282B4 (de) 2007-01-23 2007-01-23 Leuchtdiodenchip

Publications (2)

Publication Number Publication Date
WO2008089728A2 WO2008089728A2 (de) 2008-07-31
WO2008089728A3 true WO2008089728A3 (de) 2008-11-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/000081 WO2008089728A2 (de) 2007-01-23 2008-01-17 Leuchtdiodenchip mit metallischer spiegelschicht, durchkontaktierung, tunnelkontakt und ladungsträgerreservoir

Country Status (6)

Country Link
EP (1) EP2130235B1 (de)
KR (2) KR101476863B1 (de)
CN (1) CN101601141B (de)
DE (1) DE102007003282B4 (de)
TW (1) TWI451593B (de)
WO (1) WO2008089728A2 (de)

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DE102008039360B4 (de) 2008-08-22 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102008039790B4 (de) 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
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US7989824B2 (en) * 2009-06-03 2011-08-02 Koninklijke Philips Electronics N.V. Method of forming a dielectric layer on a semiconductor light emitting device
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KR101154750B1 (ko) * 2009-09-10 2012-06-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101039931B1 (ko) * 2009-10-21 2011-06-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
KR101007077B1 (ko) 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
KR101028206B1 (ko) 2010-04-08 2011-04-11 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US8764224B2 (en) 2010-08-12 2014-07-01 Cree, Inc. Luminaire with distributed LED sources
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011003684A1 (de) 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchip
US8680556B2 (en) * 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
KR101813934B1 (ko) * 2011-06-02 2018-01-30 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US8686429B2 (en) 2011-06-24 2014-04-01 Cree, Inc. LED structure with enhanced mirror reflectivity
CN103199163B (zh) * 2012-01-06 2016-01-20 华夏光股份有限公司 发光二极管装置
DE102014112562A1 (de) * 2014-09-01 2016-03-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
DE102018119622A1 (de) * 2018-08-13 2020-02-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

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DE19648309A1 (de) * 1995-12-21 1997-07-03 Hewlett Packard Co Stark reflektierende Kontakte für Licht-emittierende Halbleiterbauelemente
WO1998007218A1 (en) * 1996-08-09 1998-02-19 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
EP0886326A2 (de) * 1997-06-06 1998-12-23 Hewlett-Packard Company Separate Loch-Injektionsstruktur um die Zuverlässigkeit von lichtemittierenden Halbleiterbauelementen zu erhöhen
DE19957312A1 (de) * 1998-11-30 2000-07-06 Sharp Kk Licht emittierende Diode
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EP1387414A1 (de) * 2002-07-30 2004-02-04 LumiLeds Lighting U.S., LLC III-Nitrid LED mit einer p-Typ aktiven Schicht
US20050269588A1 (en) * 2004-06-03 2005-12-08 Samsung Electro-Mechanics Co., Ltd. Flip chip type nitride semiconductor light-emitting diode
DE102004061865A1 (de) * 2004-09-29 2006-03-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilmhalbleiterchips
DE102004050891A1 (de) * 2004-10-19 2006-04-20 LumiLeds Lighting, U.S., LLC, San Jose Lichtmittierende Halbleitervorrichtung
WO2006138465A2 (en) * 2005-06-17 2006-12-28 Goldeneye, Inc. Light emitting diodes with reflective electrode and side electrode

Also Published As

Publication number Publication date
KR20140108341A (ko) 2014-09-05
KR101476863B1 (ko) 2014-12-26
WO2008089728A2 (de) 2008-07-31
KR20090103955A (ko) 2009-10-01
KR101476966B1 (ko) 2014-12-24
TW200835002A (en) 2008-08-16
EP2130235A2 (de) 2009-12-09
DE102007003282B4 (de) 2023-12-21
CN101601141A (zh) 2009-12-09
DE102007003282A1 (de) 2008-07-24
EP2130235B1 (de) 2019-03-06
CN101601141B (zh) 2013-03-06
TWI451593B (zh) 2014-09-01

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