WO2008086705A1 - Système de production de cristaux utilisé dans un procédé à gradient thermique par rotation de plusieurs creusets - Google Patents

Système de production de cristaux utilisé dans un procédé à gradient thermique par rotation de plusieurs creusets Download PDF

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Publication number
WO2008086705A1
WO2008086705A1 PCT/CN2007/003853 CN2007003853W WO2008086705A1 WO 2008086705 A1 WO2008086705 A1 WO 2008086705A1 CN 2007003853 W CN2007003853 W CN 2007003853W WO 2008086705 A1 WO2008086705 A1 WO 2008086705A1
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Prior art keywords
furnace
crystal
rotating
crucible
lifting platform
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PCT/CN2007/003853
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English (en)
French (fr)
Inventor
Youbao Wan
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Jiaxing University
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Priority to US12/448,683 priority Critical patent/US8591648B2/en
Publication of WO2008086705A1 publication Critical patent/WO2008086705A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge

Definitions

  • the invention relates to the field of crystal growth technology, and in particular to a temperature ladder rotating multi-turn crystal growth system. Background technique
  • Chinese Patent No. 200420082546.8 describes a double heating ladder crystal growth apparatus capable of efficiently growing a single crystal. Similar to the conventional temperature gradient method, the heating element only has a part of the heating element during the crystal growth process, and gradually moves the heating element at a suitable speed. Crystal growth, this method is effective in growing a single crystal, but it cannot achieve simultaneous growth of multiple crystals.
  • the crystal growth system in the prior art multi-turn crystal growth technique generally employs a multi-turn-down crystal growth system in which a plurality of crystal growths can be accommodated simultaneously in the furnace by extending the size of the furnace in one direction.
  • the quasi-rectangular radial temperature field thus formed was initially successful in the growth of a square shape of lead tungstate crystal.
  • the high temperature region of the crystal furnace is usually located in the entire furnace zone above the crystal growth point, so that the upper temperature of the growth crucible is higher in practical applications, and the crystal growth raw material and the dopant are in a molten state, doped.
  • the crystal growth crucible support device can only drive the growth crucible to move up and down.
  • the melt and the crystal are relatively stationary, and only the melt is in the melt.
  • the main driving force is the particle concentration gradient at the crystal growth interface and the melt, the temperature gradient and the gravity.
  • the transport of the particles in the melt which only relies on natural convection and diffusion acts is slow in transport rate, low in efficiency, simple in growth composition, close to the effective segregation coefficient of the component ions, and crystal composition and melting at the growth interface.
  • the composition of the body is similar. Crystal growth can be competent for crystals that do not require high particle transport in the melt.
  • the crystal composition at the interface When the growth components are more complex, the crystal composition at the interface When the crystals of the melt composition have large differences and the effective ionization coefficient of the component ions is significantly different, the insufficient transport capacity of the melt particles will make the growth interface melt unable to obtain the particles required for crystal growth and the particles not required by the interface in time ( If the impurity particles generated by the doping can not be transferred to the melt in time, it gradually accumulates at the interface melt, and the excessive concentration causes excessive impurities in the crystal, and even forms a hetero phase. These can lead to excessive defects in the crystal, and even serious macroscopic defects such as heterogeneous inclusions, or serious results such as uneven distribution of doping ions in the crystal during growth of the crystals, resulting in deterioration of the crystal quality.
  • the furnace with a rectangular parallelepiped distribution in the multi-dip growth method can simultaneously accommodate multiple or even dozens of crystals to grow at the same time, achieving the purpose of multi-turn crystal growth.
  • the heating element located on the furnace wall can meet the heat demand of crystal growth.
  • This quasi-rectangular asymmetric radial distribution temperature field is suitable for crystal growth with a square appearance.
  • the entire crystal growth process is carried out under very quiet conditions.
  • the growth solute transmission is not required, and the component or doping ion is effectively divided.
  • the crystal growth with little difference in the coefficient of cohesion is favorable, and the crystal growth of the cylinder is unfavorable.
  • the technical problem to be solved by the present invention is to provide a temperature gradient crystal growth system which can promote crystals and make the doping uniform.
  • a temperature ladder rotating multi-turn crystal growth system comprising a crystal furnace, a crucible and a supporting device thereof and a temperature control device, wherein the crystal furnace comprises a furnace body, a heating body and a furnace; the furnace body comprises an outer casing, a thermal insulation cotton layer in order from the outside to the inside, Insulating brick layer and refractory layer; ⁇ supporting device comprises lifting platform, a plurality of ⁇ guiding tube brackets on the lifting platform and a ⁇ guiding tube on the guiding tube bracket, a lowering device connected with the lifting platform, and connecting with the lowering device
  • the lifting motor and the power supply, the guiding tube bracket and the guiding tube are provided with fastening means, and the clamping device is placed in the guiding guide tube;
  • the crucible supporting device is a rotatable multi-turn supporting device, and the lower end of each guiding tube bracket is provided with a rotating shaft, rotating The shaft passes through the lifting platform, and the lower end of the rotating shaft protrudes from the lifting platform, and
  • the heating element has only one layer located at a height of 1/4-1/2 of the furnace, and the height of the refractory layer in the furnace is only 2/3-5/6 of the total height of the furnace, and the remaining part remains. Empty, so that four temperature zones are formed in the crystal furnace. From top to bottom, the first temperature zone, the second temperature zone, the third temperature zone and the fourth temperature zone are arranged.
  • the raw material of the first temperature zone is not melted; the second temperature zone raw material Here, it is melted, wherein the junction of the first and second temperature zones is the melting point of the growth material; the temperature of the third temperature zone is lower than the melting point of the growth material, where the crystal is crystallized, wherein the junction of the second and third temperature zones is crystal
  • the growth point temperature, the temperature gradient in the third temperature zone is large, and can provide the driving force for crystal crystallization; the lower temperature of the fourth temperature zone is lower to the lowest temperature at the lowest temperature, and the region is a crystal that has already grown.
  • part of the raw material in the growing crucible melts, and the portion which is not melted in the upper part of the crucible is a massive solid, which can inhibit or retard the volatilization of the volatile gas in the lower melt to form a solid seal and protect the growing melt.
  • the melt composition is such that the melt component deviates from the crystal growth requirement by the non-stoichiometric volatilization of the components.
  • the rotation speed and direction of the rotating shaft can be adjusted as needed during crystal growth, so that the crucible in the crucible guiding tube can be rotated in accordance with a certain procedure, and the rigid crystal and the crucible wall growing during growth can be grown.
  • the furnace used in this system is similar to the vertical multi-turn crystal growth system, which is a rectangular-shaped furnace, but since the crystal growth process, the crucible guide tube is In the continuous rotation, and there is a good insulation layer between the crucible and the guide tube, the influence of the temperature change of the crucible guide tube wall on the temperature field inside the crucible tube can be buffered, so the radial field of the temperature field in the growth tube is guided.
  • the temperature is circularly symmetrical.
  • the present invention can grow a crystal having a relatively complicated melt composition, a certain difference in the component ion directional condensation coefficient, or doping, and can also grow a circular crystal which is difficult to obtain by the existing multi-turn growth technique.
  • the effective temperature gradient of the warming method of the rotating multi-turn crystal growth system of the invention is that the polycrystalline material above the growing melt in the crucible forms a solid seal above the melt, inhibiting the volatilization of the volatile components in the melt, and is not only suitable for doping.
  • the crystal growth of the volatile dopants is equally applicable to the crystal growth of dopants doped with no volatility.
  • the rotating crucible and its guiding tube can provide a radial symmetry temperature field in the crucible, so the invention can effectively improve the quality of the growing crystal, and can grow high-quality cumbersome crystals, and can also grow to obtain existing multi-turns. Round crystals are difficult to obtain with falling growth techniques.
  • Figure 1 is a schematic view of the structure of the present invention
  • Figure 2 is an enlarged view of the crucible and its supporting device. detailed description
  • the warming method rotating multi-turn crystal growth system of the present invention comprises: a crystal furnace 1, a crucible 2 and a supporting device 3 thereof, wherein the crystal furnace 1 comprises a furnace body 4, a heating element 5 and a furnace 6;
  • the body 4 includes a casing 401, a thermal insulation cotton layer 402, a thermal insulation brick layer 403 and a refractory layer 404 in order from the outside to the inside;
  • the crucible support device 3 includes a lifting platform 301, a plurality of slanting tube brackets 302 on the lifting platform 301 and guiding A weir guide tube 303 on the pipe bracket, a lowering device 304 connected to the lifting platform 301, a lifting motor 305 and a power source 306 connected to the lowering device 304, and a fastening device disposed between the guiding pipe bracket 302 and the guide pipe 303 307, ⁇ 2 is placed in the ⁇ guide tube 303;
  • the cymbal support device 3 is a rotatable multi-turn support device.
  • the lower end of each guide tube bracket 302 is provided with a rotating shaft 308.
  • the rotating shaft passes through the lifting platform 301, and the lower end of the rotating shaft 308 protrudes from the lifting platform 301.
  • Intermeshing gear 309 wherein one of the rotating shafts is longer than the other rotating shafts and is placed at an intermediate position, and the gear 309 on the longer rotating shaft passes through the coupling 310
  • a rotary electric machine 311 fixed to the lifting platform is connected; the refractory layer 404 has a height of 2/3 of the total height of the furnace 6; and the heating element 5 is located at a height of 1/4 of the furnace 6.
  • a digital frequency converter 312 is connected between the rotary electric machine 311 and the power source 306 described in this embodiment.
  • the height of the refractory layer 404 in the furnace may also be 3/4 or 5/6 of the total height of the furnace; the heating element 5 may also be located at a height of 3/8 or 1/2 of the furnace 6.
  • different heating elements can be replaced according to different crystal melting points and crystallization temperatures to meet the needs of growing different crystals or doping crystals.
  • the introduction of a rotatable crucible support device also has a negative effect in the crystal growth system.
  • the rotating guide tube generates an upward flow in the furnace, and the faster the rotation speed, the more obvious the effect.
  • Both the airflow and the rotating guide tube have an effect on the temperature field in the furnace.
  • the shape of the radial isothermal surface changes greatly, and the airflow generated along the wall of the guide tube accelerates the heat transfer of the guide tube.
  • These effects will have an effect on the temperature field distribution in the crucible, affecting the radial symmetry of the solid-liquid interface during growth.
  • These effects decrease rapidly as the rate of rotation of the guide tube decreases, and the thickness of the inner layer of the thickened guide tube can also be used to reduce the effect of this unfavorable factor.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

温梯法旋转多坩埚晶体生长系统
技术领域
本发明涉及晶体生长技术领域， 特别涉及一种温梯法旋转多坩埚晶体 生长系统。 背景技术
中国专利号为 200420082546.8描述了一种能够有效生长单根晶体的双 加热温梯法晶体生长装置， 与传统温度梯度法相类似， 晶体生长过程中发 热体只有坩埚一部分高， 通过以合适速度移动发热体逐步使晶体生长， 这 类方法在生长单根晶体时有效， 但是不能够实现多根晶体同时生长。
现有多坩埚晶体生长技术中的晶体生长系统一般采用多坩埚下降法晶 体生长系统， 这种系统中通过在一个方向延长炉膛尺寸， 使炉膛中能够同 时容纳多根晶体生长。 这样形成的准长方形径向温度场在生长外观为方形 的钨酸铅晶体等获得初步成功。 这种下降法晶体生长系统中晶体炉膛中高 温区通常位于晶体生长点以上的整个炉膛区， 这样在实际应用中生长坩埚 的上部温度较高， 晶体生长原料和惨杂剂处于熔化状态， 掺杂没有挥发性 的掺杂物质如 La203时原料上部预留或者因多晶原料生长成单晶后体积缩 小在固体上部形成的空间对晶体生长影响不是十分明显， 但是在生长熔点 较低、 挥发性较大的如？ ?2等惨杂物质时， 惨杂物质严重的挥发至上部空 间会使掺杂几乎不可能实现。 而且现有多坩埚下降法晶体生长技术中晶体 (如钨酸铅晶体、 Sb203惨杂钨酸铅晶体、 Nb205掺杂钨酸铅晶体） 生长系 统的坩埚支撑装置在自动控制设备控制下， 可以按照要求带动坩埚向下运 动实现晶体生长， 但是， 这种晶体生长坩埚支撑装置只能够带动生长坩埚 上下运动， 晶体生长时由于熔体和晶体相对静止不动， 熔体中只存在着自 然对流和扩散， 其主要动力是晶体生长界面处和熔体中粒子浓度梯度、 温 度梯度以及重心引力。 这种只依靠自然对流和扩散作用输运生长粒子的熔 体中粒子输运速率慢、 效率不高， 在生长组分较简单、 组分离子有效分凝 系数接近、 生长界面处晶体组成和熔体组成相近、. 晶体生长对熔体中粒子 输运要求不高的晶体时可以胜任。 当生长组分较复杂、 界面处晶体组成和 熔体组成相差较大、 组分离子有效分凝系数有明显差别的晶体时， 熔体粒 子输运力能力不足会使生长界面熔体不能及时得到晶体生长需要的粒子、 界面不需要的粒子 （如排杂产生的杂质粒子） 不能够及时转移到熔体中， 在界面熔体处逐渐积累， 浓度过大会使晶体中出现过多的杂质， 甚至形成 异相。 这些会导致晶体中缺陷过多， 甚至会出现异相包裹物等严重宏观缺 陷， 或在生长惨杂晶体时会出现掺杂离子在晶体中浓度分布不均匀等严重 结果， 导致晶体质量变坏。
多坩埚下降法生长系统中呈长方体分布的炉膛可以同时容纳多根甚至 数十根晶体同时生长， 实现多坩埚晶体生长的目的， 位于炉膛壁的发热体 可以满足晶体生长的热量需要。 这种准长方形不对称的径向分布温度场适 合于外观为方形的晶体生长， 整个晶体生长过程在十分安静的条件下进行， 对于生长溶质传输要求不高、 组份或掺杂离子间有效分凝系数相差不大的 晶体生长有利， 对外观为圆柱体的晶体生长不利而且整个生长过程中坩埚 内熔体和晶体保持相对不动， 缺乏强迫对流， 溶质传输效率不高， 不利于 生长组份间有效分凝系数相差较大的晶体。 发明内容
本发明所要解决的技术问题是提供一种能促进晶体惨杂， 并且使掺杂 能够均勾的温梯法晶体生长系统。
本发明所采用的技术方案是：
一种温梯法旋转多坩埚晶体生长系统， 包括晶体炉， 坩埚及其支撑装 置和温度控制装置， 其中晶体炉包括炉体、 发热体和炉膛； 炉体从外到内 依次包括外壳、 保温棉层、 保温砖层和耐火层； 坩埚支撑装置包括升降台， 位于升降台上的多个坩埚导向管支架和导向管支架上的坩埚导向管， 与升 降台连接的引下装置， 与引下装置连接的升降电机和电源， 导向管支架和 导向管之间设置有紧固装置， 坩埚置于坩埚导向管内； 坩埚支撑装置是可 旋转多坩埚支撑装置， 每个导向管支架的下端设置有旋转轴， 旋转轴贯穿 升降台， 旋转轴下端伸出升降台的部分分别连接有互相啮合的齿轮， 其中 一个旋转轴比其它旋转轴长， 该较长旋转轴上的齿轮通过联轴器连接一固 定在升降台上的旋转电机； 所述的耐火层高度为炉膛总高度的 2/3-5/6; 所 述的发热体位于炉膛 1/4-1/2高度处。
本发明在实际应用中由于发热体仅有位于炉膛 1/4-1/2高度处的一层， 而且炉膛内的耐火层高度仅为炉膛总高度的 2/3-5/6， 余下部分留空， 这样 在晶体炉中会形成四个温区。 从上到下依次为第一温区、 第二温区、 第三 温区和第四温区， 生长坩埚置于其中进行晶体生长时， 第一温区域的原料 未熔化； 第二温区原料在这里被熔化， 其中第一和第二温区交界处为生长 原料熔点处； 第三温区温度低于生长原料熔点， 这里的晶体在结晶， 其中 第二和第三温区交界处是晶体生长点温度， 第三温区温度梯度大， 能够提 供晶体结晶的驱动力； 最下面的第四温区温度较低直至最下端室温温度， 该区域是已经生长好的晶体。
这样， 在晶体生长过程中， 生长坩埚中部分原料熔化， 处于坩埚上部 没有熔化的部分为块状固体， 能够抑制或阻滞下面熔体中挥发性气体的挥 发， 形成固封， 保护生长熔体使其熔体成分不至于因为组分非化学计量挥 发而使熔体组份偏离晶体生长要求的配比。 而且由于采用可旋转的多坩埚 支攀装置， 在晶体生长时可根据需要调节旋转轴转速和方向， 使坩埚导向 管内的坩埚能够按照一定程序进行变速旋转， 生长中生长出的刚性晶体和 坩埚壁在旋转导向管机械转动的带动下与旋转电机同步， 由于惯性作用， 液态的熔体与晶体以及坩埚壁产生相对运动， 产生与提拉法类似的对熔体 的搅拌作用， 使熔体产生强迫对流， 强迫对流的产生能够大大改善熔体中 物料输运状况， 使晶体生长固液界面粒子与生长中的晶体界面和熔体的粒 子交换得以解善， 生长中的晶体能够获得需要的粒子， 排杂产生的不需要 的粒子可以及时排到熔体中， 这对提高晶体的完整性、 提高晶体质量十分 有利。
虽然为能同时容纳多个乃至数十个坩埚进行多坩埚晶体生长， 本系统 采用的炉膛与垂直多坩埚晶体生长系统相类似， 为长方体形炉膛， 但是由 于在晶体生长过程中， 坩埚导向管在连续旋转中， 而且在坩埚以及导向管 之间有良好的保温层， 可以缓冲坩埚导向管壁的温度变化对导向管中心的 坩埚内温度场的影响， 因此导向管内生长坩埚中温度场的径向温度是圆形 对称的。 由于温度梯度是晶体生长的主要驱动力， 对称的径向温度场有利 于生长中的固液界面在径向对称， 晶体在各方向发育得到的温度驱动力相 近似， 大大提高生长的晶体质量。 因此应用本发明能够生长熔体组成相对 复杂、 组分离子有向分凝系数有一定差别、 或者掺杂的晶体， 同时还能够 生长获得现有多坩埚下降生长技术很难获得的圆形晶体。
本发明的有益效果是： ' '
本发明的温梯法旋转多坩埚晶体生长系统有效的温度梯度是生长的坩 埚内熔体上方的多晶料在熔体上方形成固封， 抑制熔体中易挥发成分的挥 发， 不仅适用于掺杂易挥发的惨杂剂的晶体生长， 同时也同样适用于掺杂 没有挥发性的掺杂剂的晶体生长。 而且旋转的坩埚及其导向管可以提供坩 埚内径向对称的温度场， 因此采用本发明可以有效提高生长晶体的质量， 而且可以生长出高质量的惨杂晶体， 同时还能够生长获得现有多坩埚下降 生长技术很难获得的圆形晶体。 附图说明
图 1是本发明结构示意图；
图 2是坩埚及其支撑装置放大图。 具体实施方式
下面结合附图， 对本发明作进一步说明：
本发明的温梯法旋转多坩埚晶体生长系统， 如图 1和图 2所示包括： 晶体炉 1， 坩埚 2及其支撑装置 3， 其中晶体炉 1包括炉体 4、 发热体 5和 炉膛 6; 炉体 4从外到内依次包括外壳 401、 保温棉层 402、 保温砖层 403 和耐火层 404; 坩埚支撑装置 3包括升降台 301， 位于升降台 301上的多个 坩埚専向管支架 302和导向管支架上的坩埚导向管 303，与升降台 301连接 的引下装置 304， 与引下装置 304连接的升降电机 305和电源 306， 导向管 支架 302和导向 _管 303之间设置有紧固装置 307， 坩埚 2置于坩埚导向管 303内；
所述的坩埚支撑装置 3是可旋转多坩埚支撑装置，每个导向管支架 302 的下端设置有旋转轴 308， 旋转轴贯穿升降台 301， 旋转轴 308下端伸出升 降台 301的部分分别连接有互相啮合的齿轮 309，其中一个旋转轴比其它旋 转轴长， 并且置于中间位置， 该较长旋转轴上的齿轮 309 通过联轴器 310 连接一固定在升降台上的旋转电机 311 ;所述的耐火层 404高度为炉膛 6总 高度的 2/3 ; 所述的发热体 5位于炉膛 6的 1/4高度处。 为了有效控制结晶 时坩埚的转速和方向， 本实施例中所述的旋转电机 311和电源 306之间连 接有数字变频器 312。炉膛内耐火层 404高度还可以为炉膛总高度的 3/4或 5/6； 发热体 5还可以位于炉膛 6的 3/8或 1/2高度处。为适应生长不同的晶 体或掺杂晶体， 还可根据不同晶体熔点和结晶温度更换使用不同的发热体， 以满足生长不同的晶体或掺杂晶体的需要。
但是在实际应用中， 可旋转坩埚支撑装置的引进在晶体生长系统中也 会产生一种负面效果， 旋转的导向管会在炉膛中产生向上的气流， 转速越 快这种效应就越明显。 气流和旋转的导向管都会对炉膛中的温度场产生影 响， 尤其是径向等温面的形状会发生较大改变， 沿导向管壁产生的气流会 使导向管的传热加快。 这些影响都会对坩埚内温度场分布产生作用， 影响 生长中固液界面的径向对称。 这些影响随着导向管的旋转速率降低迅速降 低， 也可以采用加厚导向管内保温层的厚度来减小这一不利因素的影响。

Claims

权 利 要 求 书
1. 一种温梯法旋转多坩埚晶体生长系统，包括：晶体炉，坩埚及其支撑装置， 其中晶体炉包括炉体、 发热体和炉膛； 炉体从外到内依次包括外壳、 保温 棉层、 保温砖层和耐火层； 坩埚支撑装置包括升降台， 位于升降台上的多 个坩埚导向管支架和导向管支架上的坩埚导向管，与升降台连接的引下装 置， 与引下装置连接的升降电机和电源， 导向管支架和导向管之间设置有 紧固装置， 坩埚置于坩埚导向管内； 其特征在于：
所述的坩埚支撑装置是可旋转多坩埚支撑装置， 每个导向管支架的 下端设置有旋转轴， 旋转轴贯穿升降台， 旋转轴下端伸出升降台的部分 分别连接有互相啮合的齿轮， 其中一个旋转轴比其它旋转轴长， 该较长 旋转轴上的齿轮通过联轴器连接一固定在升降台上的旋转电机；
所述的耐火层高度为炉膛总高度的 2/3-5/6;
所述的发热体位于炉膛 1/4-1/2高度处。
2. 如权利要求 1所述的温梯法旋转多坩埚晶体生长系统， 其特征在于： 所述 的可旋转多坩埚支撑装置中较长的旋转轴置于中间位置。
3. 如权利要求 1所述的温梯法旋转多坩埚晶体生长系统， 其特征在于： 所述 的发热体根据生长不同晶体需要可以替换。
4. 如权利要求 1所述的温梯法旋转多坩埚晶体生长系统， 其特征在于： 所述 的可旋转多坩埚支撑装置中旋转电机和电源之间连接有数字变频器。
PCT/CN2007/003853 2006-12-29 2007-12-27 Système de production de cristaux utilisé dans un procédé à gradient thermique par rotation de plusieurs creusets WO2008086705A1 (fr)

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