WO2008084841A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2008084841A1
WO2008084841A1 PCT/JP2008/050241 JP2008050241W WO2008084841A1 WO 2008084841 A1 WO2008084841 A1 WO 2008084841A1 JP 2008050241 W JP2008050241 W JP 2008050241W WO 2008084841 A1 WO2008084841 A1 WO 2008084841A1
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WIPO (PCT)
Prior art keywords
circuit
semiconductor device
noise
semiconductor chip
semiconductor
Prior art date
Application number
PCT/JP2008/050241
Other languages
English (en)
French (fr)
Inventor
Hideki Sasaki
Yuuki Fujimura
Katsumi Kikuchi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to US12/522,816 priority Critical patent/US8148816B2/en
Priority to JP2008553116A priority patent/JPWO2008084841A1/ja
Publication of WO2008084841A1 publication Critical patent/WO2008084841A1/ja

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Abstract

　複数の半導体チップを積層した半導体装置において、ワイヤを介して、ノイズを発生する回路からノイズを受けやすい回路へのノイズ混入を回避する。複数の半導体チップを積層する半導体装置において、半導体チップ４を、半導体チップ３上のうち半導体チップ３内にあるノイズを発生する回路（ＤＣ／ＤＣコンバータ回路３ａ）の配置されていない領域に積層し、半導体チップ４内のノイズを受けやすい回路（ＰＬＬ回路４ａ）のワイヤを、ノイズを発生する回路の上をまたがないように配置する。
PCT/JP2008/050241 2007-01-11 2008-01-11 半導体装置 WO2008084841A1 (ja)

Priority Applications (2)

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US12/522,816 US8148816B2 (en) 2007-01-11 2008-01-11 Semiconductor device
JP2008553116A JPWO2008084841A1 (ja) 2007-01-11 2008-01-11 半導体装置

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JP2007-003452 2007-01-11
JP2007003452 2007-01-11

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JP2010073951A (ja) * 2008-09-19 2010-04-02 Renesas Technology Corp 半導体装置
US9105462B2 (en) 2013-03-01 2015-08-11 Kabushiki Kaisha Toshiba Semiconductor apparatus
US9312236B2 (en) 2013-03-01 2016-04-12 Kabushiki Kaisha Toshiba Semiconductor device, wireless device, and storage device

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US20110050334A1 (en) * 2009-09-02 2011-03-03 Qualcomm Incorporated Integrated Voltage Regulator with Embedded Passive Device(s)
CN101834177B (zh) * 2010-05-20 2011-11-16 锐迪科科技有限公司 Soc芯片器件
US9048112B2 (en) 2010-06-29 2015-06-02 Qualcomm Incorporated Integrated voltage regulator with embedded passive device(s) for a stacked IC
JP5959097B2 (ja) * 2012-07-03 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置
JP6076068B2 (ja) * 2012-12-17 2017-02-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US10446508B2 (en) * 2016-09-01 2019-10-15 Mediatek Inc. Semiconductor package integrated with memory die

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JP2004111656A (ja) 2002-09-18 2004-04-08 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
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JP2004165269A (ja) * 2002-11-11 2004-06-10 Canon Inc 積層形半導体装置
JP2005150613A (ja) * 2003-11-19 2005-06-09 Oki Electric Ind Co Ltd 半導体装置
JP2006073625A (ja) * 2004-08-31 2006-03-16 Sharp Corp 電子部品
JP2006216770A (ja) * 2005-02-03 2006-08-17 Sony Corp 半導体装置およびその製造方法

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JP2010073951A (ja) * 2008-09-19 2010-04-02 Renesas Technology Corp 半導体装置
TWI462260B (zh) * 2008-09-19 2014-11-21 Renesas Electronics Corp Semiconductor device
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US9105462B2 (en) 2013-03-01 2015-08-11 Kabushiki Kaisha Toshiba Semiconductor apparatus
US9312236B2 (en) 2013-03-01 2016-04-12 Kabushiki Kaisha Toshiba Semiconductor device, wireless device, and storage device

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