WO2008084545A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2008084545A1
WO2008084545A1 PCT/JP2007/050269 JP2007050269W WO2008084545A1 WO 2008084545 A1 WO2008084545 A1 WO 2008084545A1 JP 2007050269 W JP2007050269 W JP 2007050269W WO 2008084545 A1 WO2008084545 A1 WO 2008084545A1
Authority
WO
WIPO (PCT)
Prior art keywords
atomic
less
recording layer
phase change
antimony
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/050269
Other languages
English (en)
French (fr)
Inventor
Takahiro Morikawa
Motoyasu Terao
Norikatsu Takaura
Kenzo Kurotsuchi
Nozomu Matsuzaki
Yoshihisa Fujisaki
Masaharu Kinoshita
Yuichi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2008552985A priority Critical patent/JP5073680B2/ja
Priority to US12/522,744 priority patent/US8000126B2/en
Priority to PCT/JP2007/050269 priority patent/WO2008084545A1/ja
Publication of WO2008084545A1 publication Critical patent/WO2008084545A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

　抵抗値変化により情報を記憶する記録層の両面に電極を設けた相変化メモリにおいて、前記記録層は、２０原子％以上３８原子％以下のインジウムと、９原子％以上２８原子％以下のゲルマニウムと、３原子％以上１８原子％以下のアンチモンと、４２原子％以上６３原子％以下のテルルとを含むカルコゲナイド材料からなり、ゲルマニウム含有率をアンチモン含有率以上とすることにより、半田リフロー処理による実装時あるいは高温環境での使用時における耐熱性を向上させる。
PCT/JP2007/050269 2007-01-11 2007-01-11 半導体装置 Ceased WO2008084545A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008552985A JP5073680B2 (ja) 2007-01-11 2007-01-11 半導体装置
US12/522,744 US8000126B2 (en) 2007-01-11 2007-01-11 Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
PCT/JP2007/050269 WO2008084545A1 (ja) 2007-01-11 2007-01-11 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/050269 WO2008084545A1 (ja) 2007-01-11 2007-01-11 半導体装置

Publications (1)

Publication Number Publication Date
WO2008084545A1 true WO2008084545A1 (ja) 2008-07-17

Family

ID=39608448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/050269 Ceased WO2008084545A1 (ja) 2007-01-11 2007-01-11 半導体装置

Country Status (3)

Country Link
US (1) US8000126B2 (ja)
JP (1) JP5073680B2 (ja)
WO (1) WO2008084545A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020161723A (ja) * 2019-03-27 2020-10-01 日本電気株式会社 非線形抵抗素子、スイッチング素子、および非線形抵抗素子の製造方法

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WO2007057972A1 (ja) * 2005-11-21 2007-05-24 Renesas Technology Corp. 半導体装置
US8237149B2 (en) * 2007-06-18 2012-08-07 Samsung Electronics Co., Ltd. Non-volatile memory device having bottom electrode
JP2009043905A (ja) * 2007-08-08 2009-02-26 Hitachi Ltd 半導体装置
US8399935B2 (en) * 2009-09-18 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded SRAM memory for low power applications
US8199566B1 (en) * 2009-11-23 2012-06-12 Micron Technology, Inc. Write performance of phase change memory using set-pulse shaping
JP2012160671A (ja) * 2011-02-02 2012-08-23 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
KR20120110448A (ko) * 2011-03-29 2012-10-10 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
US20150001570A1 (en) * 2011-09-02 2015-01-01 King Dragon International Inc. LED Package and Method of the Same
US9117941B2 (en) * 2011-09-02 2015-08-25 King Dragon International Inc. LED package and method of the same
US9793255B2 (en) 2013-01-31 2017-10-17 Infineon Technologies Ag Power semiconductor device including a cooling material
US9117748B2 (en) 2013-01-31 2015-08-25 Infineon Technologies Ag Semiconductor device including a phase change material
KR20150081165A (ko) * 2014-01-03 2015-07-13 삼성전자주식회사 메모리 소자의 제조방법
TWI695375B (zh) * 2014-04-10 2020-06-01 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
US9178144B1 (en) * 2014-04-14 2015-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
WO2015170220A1 (en) 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
DE102014117954B4 (de) * 2014-12-05 2020-09-24 Infineon Technologies Ag Halbleitervorrichtungen mit Transistorzellen und thermoresistivem Element
US10424731B2 (en) 2015-03-13 2019-09-24 Toshiba Memory Corporation Memory device
CN109427967B (zh) * 2017-09-01 2022-10-28 旺宏电子股份有限公司 半导体结构的处理方法
KR102752636B1 (ko) * 2019-09-17 2025-01-10 에스케이하이닉스 주식회사 칼코게나이드 물질, 가변 저항 메모리 장치 및 전자 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004289029A (ja) * 2003-03-25 2004-10-14 Hitachi Ltd 記憶装置
JP2005117030A (ja) * 2003-09-17 2005-04-28 Mitsubishi Materials Corp 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254382A (en) * 1990-11-29 1993-10-19 Fuji Xerox Co., Ltd. Optical recording medium
US5883827A (en) * 1996-08-26 1999-03-16 Micron Technology, Inc. Method and apparatus for reading/writing data in a memory system including programmable resistors
JP4157264B2 (ja) 2000-09-27 2008-10-01 株式会社リコー 不揮発性メモリ及び不揮発性メモリの記録再生装置
JP4911845B2 (ja) 2001-09-20 2012-04-04 株式会社リコー 相変化型不揮発性メモリ素子、該相変化型不揮発性メモリ素子を用いたメモリアレーおよび該相変化型不揮発性メモリ素子の情報記録方法
TW200529414A (en) * 2004-02-06 2005-09-01 Renesas Tech Corp Storage

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004289029A (ja) * 2003-03-25 2004-10-14 Hitachi Ltd 記憶装置
JP2005117030A (ja) * 2003-09-17 2005-04-28 Mitsubishi Materials Corp 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020161723A (ja) * 2019-03-27 2020-10-01 日本電気株式会社 非線形抵抗素子、スイッチング素子、および非線形抵抗素子の製造方法
JP7255853B2 (ja) 2019-03-27 2023-04-11 ナノブリッジ・セミコンダクター株式会社 非線形抵抗素子、スイッチング素子、および非線形抵抗素子の製造方法

Also Published As

Publication number Publication date
JPWO2008084545A1 (ja) 2010-04-30
US8000126B2 (en) 2011-08-16
JP5073680B2 (ja) 2012-11-14
US20100096613A1 (en) 2010-04-22

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