WO2008083853A1 - Elektronisches bauelementmodul und verfahren zu dessen herstellung - Google Patents
Elektronisches bauelementmodul und verfahren zu dessen herstellung Download PDFInfo
- Publication number
- WO2008083853A1 WO2008083853A1 PCT/EP2007/050208 EP2007050208W WO2008083853A1 WO 2008083853 A1 WO2008083853 A1 WO 2008083853A1 EP 2007050208 W EP2007050208 W EP 2007050208W WO 2008083853 A1 WO2008083853 A1 WO 2008083853A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cooling device
- circuit carrier
- composite
- region
- ceramic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Definitions
- the invention relates to an electronic component module having at least one multilayer ceramic circuit carrier, and a cooling device having at least one heat sink. Furthermore, the invention also relates to a method for producing such an electronic component module.
- Electronic component modules with a plurality of multilayer circuit carriers are known. These are ⁇ example, by LTCC (Low Temperature Co-fired Ceramics) is made, which is a powerful technology for the manufacture of ceramic circuit substrate of a plurality of individual layers.
- LTCC Low Temperature Co-fired Ceramics
- ceramic unsintered green sheets for the electrical feedthroughs are provided with openings by punching out, the openings are filled with electrically conductive paste and the sheets are provided with flat line structures on their surface by screen printing. Many of these individual layers may be finally laminated together and sintered at a relatively low temperature.
- the process provides multi-layer, buried Lay ⁇ out structures, which can be used for the integration of passive circuit elements.
- layout structures can be created which have very good high-frequency properties, hermetic are sealed and have good thermal resistance.
- the LTCC technology to ⁇ applications in hostile environments, such as sensors in high-frequency technology, for example in mobile radio and radar range, and in the power electronics, for example, in automotive electronics, the transmission and engine control is suitable.
- thermally demanding applications are often limited by rela ⁇ tively poor thermal conductivity of the material, which typically has a thermal conductivity of 2 W / m K ⁇ .
- active semiconductor devices which are generally part of such LTCC modules as surface mounted components
- the mere mounting of the LTCC substrate on a heat sink is not sufficient.
- soldering or gluing an LTCC substrate onto a heat sink as described in J. Schulz-Harder et al. : "Micro Channel water cooled power modu- les", pages 1 to 6, PCIM 2000 Nuremberg, is not sufficient.
- An LTCC ceramic is compatible with silver metallization in the standard process.
- a common solution for LTCC substrates is therefore the integration of thermal vias. These are vertical vias that are filled with silver-filled, conductive paste and are primarily used for heat dissipation. In this way, an average Wär ⁇ meleit modifier of 20 W / m K can be achieved. In combination with silver-filled foils values of 90 W / m K and 150 W / m K in the vertical or horizontal direction were made possible. This is from MA Zampino et al. : "LTCC substrates with internal cooling channel and heat exchanger", Proc. Internat. Symp. On Microelectronics 2003, boarding school. Microelectronics and Packaging Society (IMAPS), 18-20 November 2003, Boston, USA.
- IMAPS Microelectronics and Packaging Society
- Another solution is to install high-loss semiconductor integrated circuit (IC) circuits, such as power amplifiers, in recesses of the LTCC board directly on the heat sink.
- IC semiconductor integrated circuit
- processors used in compact computers such as laptops.
- circuit substrate made of sintered alumina at about HOO 0 C directly with cooling copper foils for insectsinternde alumina ceramic of the so-called Direct Copper.
- EMPC 2005 The 15th European Microelectronics and Packaging Conference & Exhibition, June 12-15, 2005, Bruges, Belgium.
- the object of the invention is to provide an electronic component module and a method for producing such an electronic component module in which highly heat-conductive substrates can be stably and easily connected to a multilayer ceramic circuit carrier and the heat dissipation can be improved.
- An inventive electronic component module comprises at least one ceramic multilayer circuit carrier and a cooling device with at least one heat sink. Between the ceramic circuit carrier and the cooling device is formed, a bonding area for connecting the circuit carrier with the cooling device, which comprises a composite region of at least Antei ⁇ lig formed of metal composite layer and a eu- tektician area.
- the composite ⁇ area is formed such that the at least partially formed of metal composite layer is adapted for connection to ei ⁇ nem ceramic material, in particular of the ceramic multi-layer circuit substrate.
- the eutectic region is preferably disposed between the composite layer and the metallic cooling device. Especially with a metallic kuh ⁇ development apparatus of the eutectic region can form a special bond.
- the composite region is formed over the whole area between the circuit carrier and the cooling device. This allows easy and expense ⁇ poor application of the composite area.
- the composite region is only partially formed between the circuit carrier and the cooling device.
- specific local areas are pre ⁇ see where the composite region is formed.
- the metallic composite layer is applied as a metal paste at least partially on the circuit carrier. It is particularly preferred if this me ⁇ metallic bonding layer is applied as a metal paste together before ⁇ menyoggen the individual layers of the circuit carrier with the cooling device in this circuit carrier. It is particularly preferred if this proves Me ⁇ tallpaste is formed for the reactive compound with the ceramic circuit substrate during the process of joining the individual layers of the circuit carrier. By this design, the formation of the metallic can see composite layer and thus the stable composite Zvi ⁇ rule this metal paste and the ceramic circuit carrier made possible during the process of joining the individual layers of the circuit carrier.
- Ver ⁇ bund education no longer needs subsequently to the process of final assembly of the multi-layer circuit board are performed, but can become ⁇ least temporarily overlapping with this process and so allows ⁇ with under these process conditions. A much shorter production while increasing the stability and beyond improved thermal conductivity can be achieved.
- the circuit carrier is formed as a ceramic LTCC circuit carrier and the composite layer for reactive Verbundermaschineung formed with the LTCC circuit carrier during the LTCC process for connecting the individual layers and the ceramic circuit substrate.
- the eutectic Be ⁇ rich for reactive Verbunderzeugung with the cooling device during the process for connecting the individual layers of the ceramic multilayer circuit substrate generated bar is advantageous when the circuit carrier is designed as a ceramic LTCC circuit carrier and the eutectic region during the LTCC process for connecting the individual layers of the ceramic circuit substrate is generated.
- the bond derausbrand by the induced shrinkage of the ceramic material is limited by the composite with the metalli ⁇ rule intermediate layers to the vertical dimension.
- the bond between the circuit carrier, the composite region and the cooling device is formed by a sintering process at a temperature between 84O 0 C and 93O 0 C, in particular at about 900 0 C.
- the Ver ⁇ bunch is thus achieved preferably at a relatively low sintering temperature of about 900 0 C characterized in that the multilayer LTCC circuit substrate on the contact surface to the heat sink the cooling device compatible with LTCC and thus in the process reactive metal paste over the entire surface or in either a specially selected pattern is printed.
- Such metal pastes can in ⁇ play, of metal particles such as silver, gold, platinum or palladium and glass particles and organic binders. The glass content ensures good adhesion to the functional LTCC layers of the circuit carrier.
- the composite area continues to be formed by a eutectic area. This is produced in particular between the cooling ⁇ body metal, which is preferably copper, and with the metal of the metallic composite layer.
- Be ⁇ Sonders preferably may be provided that these metal- metallic compound layer is an at least up syllable pointing LTCC screen printing paste.
- the heat sink extends laterally beyond the dimensions of the circuit carrier at least on one side.
- a simple mounting on this projecting side of the heat sink with further component modules and / or a housing can thereby also be made possible.
- the electronic component module By means of the electronic component module according to the invention, it is possible to achieve a full-area material connection without additional substances, which must be applied in the state of the art following the actual production, for example by brazing or by gluing, solely by metallic reaction between metal layers and the components of the component module , DA, by the smallest possible thermal resistance be made possible.
- a purely passive cooling of the electronic component module without moving substances, phase boundaries ⁇ or phase transitions can be achieved.
- This configuration of the composite region proves to be particularly advantageous when the electronic component Mentmodul has a plurality of ceramic circuit carriers, between which a plurality of cooling devices, in particular heat sink are formed as intermediate layers.
- stacks are ⁇ like formed of ceramic GmbHungsträ with intervening integrated heat sinks.
- the proposed electronic component module with the ⁇ like composite areas a significant improvement in terms of stability and functionality.
- the production of such complex systems can be made much faster and cheaper. In particular, this may be why he ⁇ enough, since the formation of the entire final composite area occurs substantially simultaneously with the actual production of the composite or multilayer circuit carrier.
- the heat sinks can also be formed as integrated foils, in particular copper foils, and thus can also be used as high current-capable conductors.
- At least one multilayer ceramic circuit substrate formed and connected to a cooling device with at least one heat sink.
- the circuit carrier and the cooling device are connected by a composite region, which composite region is formed by a composite at least partially made of metal composite layer and a eutectic region.
- This at least two layers of the composite system allows an optimum range at ⁇ , binding to the circuit substrate on the one hand, formed of a first material, and the cooling device ⁇ on the other hand which is formed of a second mate rial ⁇ . In addition to the stable connection, this can also be produced with little effort.
- the metallic composite layer is formed before the application of the circuit substrate to the cooling device on this circuit substrate as at least partially applied metal paste.
- the eutectic specific area is preferably formed negotiated between the metallic bonding layer and the cooling device. It is particularly preferred if the eutectic region is formed during the connection between the circuit carrier, the composite layer and the cooling device.
- the eutectic region is preferably formed by a material compound having a melting temperature lower than the process temperature at which the circuit carrier, the composite layer and the cooling device are connected to one another.
- the circuit carrier, the composite layer and the cooling device are preferably connected by sintering at a temperature between 84O 0 C and 93O 0 C, in particular at about 900 0 C.
- the circuit ⁇ carrier is formed as a ceramic LTCC circuit carrier and the eutectic region for reactive Verbundermaschineung with the cooling device during the LTCC process for connecting the individual layers of the ceramic circuit substrate is generated.
- the metallic composite layer for reactive Verbunderzeugung formed with the ceramic circuit substrate during this process and, secondly, the eutectic region during this process between the metalli ⁇ rule composite layer and the metallic heat sink is testament ER.
- the metal paste and thus the metallic composite layer is formed on ⁇ part of silver and having such particles and the heat sink is at least partially formed of copper.
- a eutectic loading can be rich generate, in which a eutectic can be formed with a melt temperature of about 779 0 C, for example at a 40% silver content during the LTCC process for connecting the A ⁇ cell layers of the ceramic circuit carrier. This can thus be relatively easily formed at the preferred process temperatures of 900 0 C in this LTCC process.
- a metal paste provided with gold particles can be provided as me ⁇ metallic bonding layer, which forms a Eu ⁇ tektikum with a 43.5% aqueous gold content and a melting temperature at about 889 0 C.
- FIG. 1 shows a sectional view through an embodiment of an inventive electronic component module.
- Fig. 2 is a phase diagram for the silver-copper system for a eutectic region of the composite region of the electronic component module.
- the electronic component module 1 comprises a first multilayer ceramic LTCC circuit carrier 2 and a second multilayer ceramic LTCC circuit carrier 3. These two circuit carriers 2 and 3 are arranged on opposite sides of a heat sink 4, which is assigned to a cooling device.
- the cooling body 4 is thus arranged integrally in the electronic component module 1 between the two circuit carriers 2 and 3.
- the heat sink 4 extends on both sides in the lateral direction (x-direction) beyond the dimensions of the LTCC circuit carriers 2 and 3.
- bores 41 and 42 are formed in the heat sink 4, which are provided for attachment, in particular screw, with other components or a housing.
- a first composite layer 5 is as well as the upper LTCC circuit carrier 2 and the heat sink 4, which is formed in the embodiment of copper from ⁇ .
- a composite layer 6 is likewise formed between the heat sink 4 and the second LTCC circuit carrier 3.
- Both composite layers 5 and 6 are designed for reactive connection with the ceramic LTCC circuit carriers 2 and 3. This means that 2 and 3, the bond between the composite layer 5 is formed and the first circuit substrate 2, and the bond between the second bonding layer 6 and the second circuit substrate 3 during the LTCC process for connecting the jewei ⁇ time individual layers of the circuit carrier.
- the composite layers 5 and 6 are each formed on the entire surface between the heat sink 4 and the respective circuit carrier 2 and 3. It can also be provided that the composite layers 5 and 6 are each formed only in regions. In particular, the composite layers 5 and 6 are formed at those points at which the largest heat generation occurs due to the arrangement of electronic components in the respective circuit carriers 2 and 3. By one of the ⁇ like targeted local training of composite layers ⁇ 5 and 6 can then take the best possible heat dissipation. This heat removal takes place laterally in the embodiment shown.
- a first eutectic region 7 is formed between the metallic composite layer 5 and the heat sink 4. Furthermore, a second eutectic region 8 is formed between the second metallic composite layer 6 and the heat sink 4. The two eutectic regions 7 and 8 thus form each because subsections of the metallic composite layer 5 and the heat sink 4 on the one hand and the metallic composite layer 6 and the heat sink 4 on the other.
- the metallic composite layers 5 and 6 are at least partially provided with silver particles.
- the heat sink 4 is at least partially formed of copper.
- the e- lectronic component module 1, shown schematically is produced so that at ⁇ the individual layers of the circuit substrate 2 and 3 with the respective electronic components and electric lines are generated next. Then, an LTCC-compatible metal paste is applied to the heat sink 4 facing sides of the circuit substrate 2 and 3 over the entire surface or in a specially selected pattern, in particular printed on ⁇ . In a subsequent LTCC process, in which the respective individual layers of the circuit carriers 2 and 3 are connected to one another, in particular laminated together and then sintered, then the respective composite regions, which first composite region, the metallic composite layer 5 and the eutectic Be ⁇ rich 7 and which second composite region comprises the metallic composite layer 6 and the eutectic region 8.
- the sintering of the circuit substrate 2 and 3 is performed at a temperature of about 900 0 C.
- the composite is formed, in which a re ⁇ composite active generation between the composite layer 5 with the ceramic circuit substrate 2 and a reactive composite production between Circuit carrier 3 and the me- metallic composite layer 6 takes place. Further, also generates a composite reactive ⁇ generation between the metallic compound layer 5 and the heat sink 4 during this LTCC process and thereby formed the eutectic loading rich. 7 In a corresponding manner, the formation of the eutectic region 8 takes place.
- silver-copper systems are formed as eutectic regions 7 and 8.
- FIG. 2 is a phase diagram for such a silver-copper system is shown in which a eutectic with a melting temperature of about 779 0 C is formed with an exemplary silver content of 40%. This can thus easily form at the process temperature of 900 0 C during sintering.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097016631A KR20100014769A (ko) | 2007-01-10 | 2007-01-10 | 전자 부품 모듈 및 이의 생산 방법 |
US12/522,849 US8164177B2 (en) | 2007-01-10 | 2007-01-10 | Electronic component module and method for production thereof |
JP2009545112A JP2010516051A (ja) | 2007-01-10 | 2007-01-10 | 電子コンポーネントモジュールおよび電子コンポーネントモジュールの製造方法 |
EP07703755.4A EP2108190B1 (de) | 2007-01-10 | 2007-01-10 | Elektronisches bauelementmodul und verfahren zu dessen herstellung |
CN2007800445662A CN101548379B (zh) | 2007-01-10 | 2007-01-10 | 电子器件模块及其制造方法 |
PCT/EP2007/050208 WO2008083853A1 (de) | 2007-01-10 | 2007-01-10 | Elektronisches bauelementmodul und verfahren zu dessen herstellung |
TW097100530A TW200849518A (en) | 2007-01-10 | 2008-01-07 | Electronic component module and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2007/050208 WO2008083853A1 (de) | 2007-01-10 | 2007-01-10 | Elektronisches bauelementmodul und verfahren zu dessen herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008083853A1 true WO2008083853A1 (de) | 2008-07-17 |
Family
ID=37969998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2007/050208 WO2008083853A1 (de) | 2007-01-10 | 2007-01-10 | Elektronisches bauelementmodul und verfahren zu dessen herstellung |
Country Status (7)
Country | Link |
---|---|
US (1) | US8164177B2 (de) |
EP (1) | EP2108190B1 (de) |
JP (1) | JP2010516051A (de) |
KR (1) | KR20100014769A (de) |
CN (1) | CN101548379B (de) |
TW (1) | TW200849518A (de) |
WO (1) | WO2008083853A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9255741B2 (en) * | 2012-01-26 | 2016-02-09 | Lear Corporation | Cooled electric assembly |
JP2015085447A (ja) * | 2013-10-31 | 2015-05-07 | セイコーエプソン株式会社 | ロボット、ロボットの製造方法 |
US9461190B2 (en) * | 2013-09-24 | 2016-10-04 | Optiz, Inc. | Low profile sensor package with cooling feature and method of making same |
US8969733B1 (en) | 2013-09-30 | 2015-03-03 | Anaren, Inc. | High power RF circuit |
US9524917B2 (en) * | 2014-04-23 | 2016-12-20 | Optiz, Inc. | Chip level heat dissipation using silicon |
EP3185655B8 (de) * | 2015-12-22 | 2024-01-03 | Heraeus Electronics GmbH & Co. KG | Verfahren zur individuellen codierung von metall-keramik-substraten |
US9996725B2 (en) | 2016-11-03 | 2018-06-12 | Optiz, Inc. | Under screen sensor assembly |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19846638A1 (de) * | 1998-10-09 | 2000-04-20 | Abb Research Ltd | Kompositplatte sowie Verfahren zur Herstellung und Anwendung einer solchen Kompositplatte |
EP1202345A2 (de) * | 2000-10-31 | 2002-05-02 | Hitachi, Ltd. | Leistungshalbleiterelement-Wärmeleitplatte, Leitplatte dafür, Kühlkörpermaterial und Lotmaterial |
EP1737034A1 (de) * | 2004-04-05 | 2006-12-27 | Mitsubishi Materials Corporation | Ai/ain-verbindungsmaterial, basisplatte für ein leistungsmodul, leistungsmodul und prozess zur herstellung eines ai/ain-verbindungsmaterials |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02208031A (ja) * | 1989-02-07 | 1990-08-17 | Kawasaki Steel Corp | 回路基板の製造方法 |
DE69031039T2 (de) * | 1990-04-16 | 1997-11-06 | Denki Kagaku Kogyo Kk | Keramische leiterplatte |
JPH0585869A (ja) * | 1991-04-18 | 1993-04-06 | Nippon Steel Corp | 窒化アルミニウムセラミツクスの表面処理方法 |
US5650662A (en) * | 1993-08-17 | 1997-07-22 | Edwards; Steven F. | Direct bonded heat spreader |
JPH10139559A (ja) | 1996-11-14 | 1998-05-26 | Nippon Chemicon Corp | ガラスセラミック基板及びその製造方法 |
JP3570837B2 (ja) * | 1997-01-21 | 2004-09-29 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JP3851823B2 (ja) | 2002-01-23 | 2006-11-29 | 日本特殊陶業株式会社 | 金属体付配線基板 |
CN100390976C (zh) * | 2002-12-31 | 2008-05-28 | 千如电机工业股份有限公司 | 一种孔洞化结构陶瓷散热片及其制备方法 |
US7650694B2 (en) * | 2005-06-30 | 2010-01-26 | Intel Corporation | Method for forming multilayer substrate |
-
2007
- 2007-01-10 CN CN2007800445662A patent/CN101548379B/zh not_active Expired - Fee Related
- 2007-01-10 US US12/522,849 patent/US8164177B2/en not_active Expired - Fee Related
- 2007-01-10 KR KR1020097016631A patent/KR20100014769A/ko not_active Application Discontinuation
- 2007-01-10 WO PCT/EP2007/050208 patent/WO2008083853A1/de active Application Filing
- 2007-01-10 JP JP2009545112A patent/JP2010516051A/ja active Pending
- 2007-01-10 EP EP07703755.4A patent/EP2108190B1/de not_active Not-in-force
-
2008
- 2008-01-07 TW TW097100530A patent/TW200849518A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19846638A1 (de) * | 1998-10-09 | 2000-04-20 | Abb Research Ltd | Kompositplatte sowie Verfahren zur Herstellung und Anwendung einer solchen Kompositplatte |
EP1202345A2 (de) * | 2000-10-31 | 2002-05-02 | Hitachi, Ltd. | Leistungshalbleiterelement-Wärmeleitplatte, Leitplatte dafür, Kühlkörpermaterial und Lotmaterial |
EP1737034A1 (de) * | 2004-04-05 | 2006-12-27 | Mitsubishi Materials Corporation | Ai/ain-verbindungsmaterial, basisplatte für ein leistungsmodul, leistungsmodul und prozess zur herstellung eines ai/ain-verbindungsmaterials |
Also Published As
Publication number | Publication date |
---|---|
JP2010516051A (ja) | 2010-05-13 |
TW200849518A (en) | 2008-12-16 |
CN101548379A (zh) | 2009-09-30 |
EP2108190A1 (de) | 2009-10-14 |
KR20100014769A (ko) | 2010-02-11 |
US8164177B2 (en) | 2012-04-24 |
EP2108190B1 (de) | 2017-12-06 |
CN101548379B (zh) | 2011-01-12 |
US20100014253A1 (en) | 2010-01-21 |
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