WO2008078652A1 - 誘電体素子とその製造方法 - Google Patents

誘電体素子とその製造方法 Download PDF

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WO2008078652A1
WO2008078652A1 PCT/JP2007/074552 JP2007074552W WO2008078652A1 WO 2008078652 A1 WO2008078652 A1 WO 2008078652A1 JP 2007074552 W JP2007074552 W JP 2007074552W WO 2008078652 A1 WO2008078652 A1 WO 2008078652A1
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dielectric element
producing
high level
dielectric
nano sheet
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PCT/JP2007/074552
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French (fr)
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Minoru Osada
Yasuo Ebina
Takayoshi Sasaki
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National Institute For Materials Science
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Priority to US12/448,528 priority Critical patent/US8184426B2/en
Priority to KR1020097008027A priority patent/KR101405078B1/ko
Priority to JP2008551070A priority patent/JP5294201B2/ja
Publication of WO2008078652A1 publication Critical patent/WO2008078652A1/ja

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Abstract

 誘電体薄膜がペロブスカイトナノシートの層よりなる誘電体素子を提供する。これによって、ペロブスカイトナノシートの有する独自の物性および高い組織、構造制御性を活用することができ、ナノ領域において高い誘電率と良好な絶縁特性を同時に実現することができる。
PCT/JP2007/074552 2006-12-25 2007-12-20 誘電体素子とその製造方法 WO2008078652A1 (ja)

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JP7261540B2 (ja) 2017-01-19 2023-04-20 三星電子株式会社 誘電複合体と、これを含む積層型キャパシタ及び電子素子
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KR20100014232A (ko) 2010-02-10
US20100226067A1 (en) 2010-09-09
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JPWO2008078652A1 (ja) 2010-04-22
JP5294201B2 (ja) 2013-09-18

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