WO2008075643A1 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
WO2008075643A1
WO2008075643A1 PCT/JP2007/074222 JP2007074222W WO2008075643A1 WO 2008075643 A1 WO2008075643 A1 WO 2008075643A1 JP 2007074222 W JP2007074222 W JP 2007074222W WO 2008075643 A1 WO2008075643 A1 WO 2008075643A1
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WO
WIPO (PCT)
Prior art keywords
region
substrate
chemical solution
processing
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074222
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English (en)
French (fr)
Japanese (ja)
Inventor
Hiroshi Tanaka
Takao Inada
Yuji Kamikawa
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Priority claimed from JP2006344875A external-priority patent/JP4829094B2/ja
Priority claimed from JP2006344806A external-priority patent/JP4842794B2/ja
Priority claimed from JP2006344911A external-priority patent/JP5063103B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2008075643A1 publication Critical patent/WO2008075643A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for performing a plurality of processes in a single processing tank using two or more types of processing liquids on a substrate to be processed.
  • the present invention relates to a substrate processing apparatus and a substrate processing method capable of improving processing uniformity within a plate surface of a substrate to be processed.
  • the present invention also relates to a substrate processing apparatus and a substrate processing method for continuously performing a plurality of types of processing using a chemical solution on a substrate to be processed in the same processing tank.
  • the present invention relates to a substrate processing apparatus and a substrate processing method capable of improving the uniformity of processing in a plane and efficiently performing a plurality of processing.
  • the present invention provides a substrate processing apparatus and a substrate for selecting one process from a plurality of processes using different types of chemical solutions and performing the selected process on a substrate to be processed in a processing tank.
  • the present invention relates to a processing method, and more particularly, to a substrate processing apparatus and a substrate processing method capable of improving the uniformity of processing within a plate surface of a substrate to be processed.
  • a substrate processing apparatus and a substrate processing method are known in which two or more kinds of processing liquids are sequentially supplied into one processing tank and a plurality of processes are performed in the same processing tank.
  • JP-A-8-195372 discloses an example in which a treatment using a chemical solution and a rinse treatment using pure water performed thereafter are carried out in the same tank.
  • the substrate to be processed is processed while the substrate to be processed is immersed in the processing tank in which the chemical liquid is stored, and the chemical liquid is replenished so that a stirring flow is formed in the processing tank.
  • the concentration of the chemical solution can be made uniform in the treatment tank.
  • pure water is supplied into the treatment tank so that a stirring flow is formed in the treatment tank, and the pure water is treated so that an upward flow is formed in the treatment tank.
  • the process of supplying inside It is.
  • the chemical solution in the treatment tank can be replaced with pure water, and the substrate to be treated can be rinsed evenly.
  • Japanese Patent Laid-Open No. 2001-274133 discloses a processing method similar to the processing method described in Japanese Patent Laid-Open No. 8-195372 (third embodiment of Japanese Patent Laid-Open No. 2001-274133).
  • Japanese Patent No. 3343033 the treatment liquid is stored in the treatment tank and an upward flow is formed in the treatment tank so that the treatment liquid is replenished in the treatment tank.
  • a substrate to be processed is disposed in a processing tank and processed.
  • the configuration of Japanese Patent No. 3343033 is applied to an apparatus that performs multiple types of processing, such as etching processing and water washing processing, in a single processing tank while sequentially supplying multiple types of processing liquids to the processing tank. (Patent No. 3343033, paragraph 0030).
  • the uniformity of processing within the plate surface of the substrate to be processed can be improved depending on the type of processing liquid.
  • the uniformity of treatment within the plate surface of the substrate to be treated is significantly reduced.
  • the uniformity of the processing within the plate surface of the substrate to be processed is ensured as disclosed in Japanese Laid-Open Patent Publication No. 2001-274133, No. 2002-100605, etc.
  • the uniformity of the processing within the plate surface of the substrate to be processed is ensured and the processing is efficiently performed. Therefore, it is necessary to change the processing method of the substrate to be processed according to the type of chemical solution.
  • the required power for processing uniformity within the plate surface of the substrate to be processed may differ depending on the processing. In this case, it is effective to change the processing method of the substrate to be processed according to the uniformity requirement.
  • the present invention has been made in consideration of these points, and is a substrate process in which a plurality of processes are performed on a substrate to be processed using two or more types of processing liquids in one processing tank.
  • An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can improve the uniformity of processing within the plate surface of a substrate to be processed.
  • the present invention also relates to a substrate processing apparatus and a substrate processing method for continuously performing a plurality of types of processing using a chemical solution on a substrate to be processed in the same processing tank, and more particularly, a substrate processing substrate. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of improving the uniformity of processing in a plane and efficiently performing a plurality of processing.
  • the present invention provides a substrate processing apparatus and a substrate for selecting one process from a plurality of processes using different types of chemical solutions and performing the selected process on a substrate to be processed in a processing tank.
  • the inventors of the present invention etched a silicon wafer using ammonia water, for example, when processing using a chemical solution that is extremely reactive with the substrate.
  • the degree of progress of the processing on the substrate surface of the substrate can be influenced not only by the concentration of the processing solution in the vicinity of the substrate surface of the substrate but also the flow of the processing solution in the vicinity of the substrate surface of the substrate, for example, the flow velocity Got.
  • the first substrate processing method, the substrate processing apparatus, the program, and the program recording medium according to the present invention described below intends to solve the above-described problems based on such knowledge.
  • a first substrate processing method includes a rectifying member provided therein, and a process including a first region located above the rectifying member and a second region located below the rectifying member.
  • Replacing the liquid with the chemical solution supplying water to the second region of the treatment tank and flowing the water from the second region to the first region via the rectifying member. At least in the vicinity of the substrate, while forming an upward flow, Characterized in that it and a step of substituting with serial water.
  • the chemical solution is supplied into the processing tank such that an upward flow is formed in the processing tank in which the substrate is stored and the processing liquid is stored. Further, after the inside of the treatment tank is replaced with the chemical solution, water is supplied into the treatment tank so that an upward flow is formed in the treatment tank. In any case, an upward flow is formed at least in the vicinity of the substrate. Therefore, by making the upward flow uniform, the liquid flow in the vicinity of the plate surface of the substrate can be made substantially uniform over the plate surface. As a result, the processing uniformity within the plate surface of the substrate can be improved regardless of the type of liquid.
  • a substrate such as a silicon wafer can be processed substantially uniformly even when a chemical solution made of ammonia water having strong reactivity is used.
  • the term “chemical solution consisting of aqueous ammonia” as used herein refers to an aqueous solution containing ammonia as a main component, and includes an aqueous solution in which one or more components other than ammonia (for example, a surfactant) are mixed in a trace amount together with ammonia. It is a concept.
  • the treatment liquid is preferably water.
  • the treatment liquid replaced by the chemical liquid is water.
  • the supply amount per unit time of the chemical solution supplied into the processing tank in the step of replacing the processing liquid in the processing tank with the chemical liquid is as follows:
  • the supply amount per unit time of the water supplied into the treatment tank may be substantially the same.
  • the step of disposing the substrate in the first region of the processing tank includes the upper supply pipe connected to the first region of the processing tank.
  • the processing liquid is supplied to the first area, the processing liquid is supplied to the second area from a lower supply pipe connected to the second area of the processing tank, and the processing liquid is supplied into the processing tank.
  • the processing tank can be quickly filled with the processing liquid.
  • the step of placing the substrate in the first region of the processing tank includes the step of placing the processing liquid in the first region of the processing tank in which the processing liquid is stored. You may make it further have the process of arrange
  • the rectifying member comprises a rectifying plate having a plurality of through holes and dividing the inside of the processing tank into the first region and the second region,
  • the liquid supplied to the second region may flow from the second region into the first region through a through hole of the rectifying plate.
  • a chemical is applied to the second region of the processing tank.
  • the first substrate processing method after the step of supplying the water and replacing the chemical in the processing tank with the water, water is supplied to the first region of the processing tank.
  • a step of supplying and stirring the liquid at least in the vicinity of the substrate in the first region may be further provided.
  • the deposits attached to the plate surface of the substrate can be removed with a high removal rate.
  • water in the step of supplying water in the first substrate processing method and stirring the liquid in the first region in the processing tank, water is supplied to the first region in the processing tank, Water may be supplied to the second region of the treatment tank. According to such a substrate processing method, it is possible to promote the lifting of the deposits removed from the substrate upward in the processing tank. As a result, it is possible to prevent the removed deposits from adhering to the substrate again.
  • ultrasonic waves may be generated in the liquid in the processing tank.
  • the force S can be removed to remove deposits adhering to the plate surface of the substrate with a high removal rate.
  • a first substrate processing apparatus includes a processing tank that includes a first area that accommodates a substrate, and a second area that is disposed below the first area, and the processing tank in the processing tank.
  • a rectifying member provided between the first region and the second region, and connected to the second region of the treatment tank, can supply at least a chemical solution and water into the second region of the treatment tank.
  • a control device for controlling the supply of liquid into the second region wherein the control device stores the treatment liquid and supplies the chemical solution to the second region of the treatment tank containing the substrate.
  • the chemical solution is caused to flow from the second region to the first region via a flow regulating member, and an upward flow is formed at least in the vicinity of the substrate in the first region. And then supplying water to the second region of the treatment tank and flowing the water from the second region to the first region via the rectifying member, and at least the substrate in the first region.
  • the switching mechanism is controlled so as to replace the chemical in the treatment tank with the water while forming an upward flow in the vicinity of
  • the chemical solution is supplied into the processing tank such that an upward flow is formed in the processing tank in which the substrate is stored and the processing liquid is stored. Further, after the inside of the treatment tank is replaced with the chemical solution, water is supplied into the treatment tank so that an upward flow is formed in the treatment tank. In any case, an upward flow is formed at least in the vicinity of the substrate. Therefore, by making the upward flow uniform, the liquid flow in the vicinity of the plate surface of the substrate can be made substantially uniform over the plate surface. As a result, the processing uniformity within the plate surface of the substrate can be improved regardless of the type of liquid.
  • a substrate such as a silicon wafer can be processed substantially uniformly even when a chemical solution made of ammonia water having strong reactivity is used.
  • chemical solution consisting of aqueous ammonia refers to an aqueous solution containing ammonia as a main component, and includes an aqueous solution in which one or more components other than ammonia (for example, a surfactant) are mixed in a trace amount together with ammonia. It is a concept.
  • the treatment liquid replaced by the chemical liquid is water.
  • the control device when the control device replaces the processing liquid in the processing tank with the chemical liquid, a unit time of the chemical liquid supplied into the processing tank.
  • the supply amount per unit time is substantially the same as the supply amount per unit time of the water supplied into the treatment tank when the chemical solution in the treatment tank is replaced with the water.
  • the switching mechanism may be controlled.
  • the uniformity of processing in the wafer plate surface particularly, the wafer along the direction corresponding to the vertical direction when the wafer is placed in the processing tank.
  • the uniformity of processing within the plate surface can be further improved.
  • the rectifying member has a rectifying plate in which a large number of through holes are formed, and the liquid supplied to the second region passes through the rectifying plate. You may make it flow in into the 1st field from the 2nd field via a hole.
  • an upward flow having uniformity in the horizontal direction is formed in the first region of the processing tank by the rectifying member having a simple configuration, while the second region of the processing tank is formed. To allow the liquid to flow into the first region.
  • the first substrate processing apparatus further includes an upper supply pipe connected to the first region of the processing tank and capable of supplying a liquid into the first region of the processing tank.
  • the switching mechanism is connected to the upper supply pipe and is configured to switch the supply of liquid from the upper supply pipe
  • the control device is configured to switch the first region of the processing tank from the upper supply pipe.
  • the supply of liquid into the inside may be controlled. According to such a substrate processing apparatus, it is possible to supply liquid directly from the upper supply pipe to the substrate disposed in the first region. Thereby, a board
  • the first substrate processing apparatus force further includes a plurality of ejection members provided in the first region of the processing tank so that the arrangement positions along the vertical direction are different from each other.
  • the upper supply pipe may be connected to the discharge member, and liquid may be discharged into the first region of the processing tank via the discharge member.
  • the control device supplies the chemical solution from the upper supply pipe to the first region before supplying the chemical solution from the lower supply pipe into the processing tank.
  • the switching mechanism is controlled so that the processing liquid is supplied from the lower supply pipe to the second region and the processing liquid is stored in the processing tank. Good.
  • the processing tank can be quickly filled with the processing liquid. As a result, the substrate can be processed efficiently.
  • the control device supplies water from the lower supply pipe into the processing tank, water is supplied from the upper supply pipe to the first region.
  • the switching mechanism may be controlled so that the liquid is stirred at least in the vicinity of the substrate in the first region. According to such a substrate processing apparatus, the liquid is agitated in the vicinity of the substrate. Eliminating power with S
  • the control device agitates the liquid in the first region in the processing tank, the upper supply pipe force supplies water to the first region.
  • the switching mechanism may be controlled such that water is supplied from the lower supply pipe to the second region. According to such a substrate processing apparatus, the force S can be promoted to lift the deposits removed from the substrate upward in the processing tank. As a result, it is possible to prevent the removed deposits from adhering to the substrate again.
  • the control device supplies the chemical liquid from the lower supply pipe and replaces the processing liquid in the processing tank with the chemical liquid
  • the chemical solution is continuously supplied from the lower supply pipe to the second region, and the chemical solution is caused to flow from the second region to the first region via the rectifying member, and at least in the first region.
  • the switching mechanism may be controlled so that the substrate is immersed in the chemical solution in the processing tank while forming an upward flow in the vicinity. According to such a substrate processing apparatus, it is possible to adjust the degree of processing on the substrate while ensuring the uniformity of processing within the plate surface of the substrate.
  • the first substrate processing apparatus may further include an ultrasonic generator for generating an ultrasonic wave in the liquid in the processing tank. According to such a substrate processing apparatus, it is possible to remove deposits adhering to the plate surface of the substrate with a high removal rate.
  • a first program includes a processing tank including a first area that accommodates a substrate and a second area disposed below the first area, and the first area in the processing tank; A program that is executed by a control device that controls a substrate processing apparatus that includes a rectifying member provided between the second region and the second region. Placing the substrate in the first region and immersing the substrate in the processing solution stored in the processing tank; supplying a chemical to the second region of the processing tank; A step of allowing the chemical solution to flow into the first region from two regions and replacing the treatment solution in the treatment tank with the chemical solution while forming an upward flow at least in the vicinity of the substrate in the first region; Before supplying water to the second region of the treatment tank.
  • a substrate processing apparatus comprising: a step of replacing the chemical solution in the processing tank with the water while forming an upward flow at least in the vicinity of the substrate in the region. .
  • a first recording medium includes a processing tank that includes a first region that accommodates a substrate and a second region that is disposed below the first region, and the first region in the processing tank. And a rectifying member provided between the second region and a recording medium on which a program to be executed by a control device that controls the substrate processing apparatus is recorded. And a step of immersing the substrate in the processing solution stored in the processing tank, and a step of immersing the substrate in the second area of the processing tank.
  • the substrate processing apparatus is made to perform a substrate processing method including a step of replacing the chemical in the processing tank with the water while forming.
  • the inventors of the present invention have made the progress of processing on the plate surface of the substrate to be processed not only the concentration of the chemical solution in the vicinity of the plate surface of the substrate to be processed.
  • a second substrate processing method, a substrate processing apparatus, a program and a program recording medium according to the present invention described below, and a third substrate processing method, a substrate processing apparatus, a program and a program recording medium according to the present invention Based on such knowledge, the flow of liquid in the processing tank is adjusted according to the requirements regarding the reactivity between the chemical solution used for processing and the substrate to be processed and the uniformity of processing in one substrate to be processed. It is intended to solve the above-mentioned problems by appropriately changing each process.
  • a rectifying member is provided inside, a first region that is located above the rectifying member and accommodates the substrate, and a second region that is located below the rectifying member.
  • the substrate is processed using a processing tank including: the second of the processing tank
  • a first chemical solution is supplied to the region, and the first chemical solution is caused to flow from the second region to the first region in which the substrate is accommodated via the rectifying member, and at least the first region in the first region is introduced.
  • a second chemical solution is supplied to the first region and the second region of the tank, and the substrate is moved to the second region while stirring the liquid at least in the vicinity of the substrate in the first region. And a step of treating with a chemical solution.
  • a substrate processing method when a plurality of types of processing using chemicals are performed on the substrate in the same processing tank, the chemicals are supplied to the processing tank for each processing. Change the method. Thereby, a board
  • substrate can be processed by the method suitable for each process. As a result, it is possible to efficiently perform a plurality of processes on the substrate and to improve the uniformity of the processes within the plate surface of the substrate.
  • a treatment using a chemical solution that has extremely high reactivity with the substrate for example, a silicon wafer using a chemical solution made of aqueous ammonia.
  • the etching process is mentioned.
  • a treatment using a chemical solution having a lower reactivity with the substrate than the first chemical solution for example, hydrogen fluoride water is used. Etching treatment of a silicon wafer using a chemical solution.
  • chemical solution comprising ammonia water refers to an aqueous solution containing ammonia as a main component, and also includes an aqueous solution in which a small amount of one or more components other than ammonia (for example, a surfactant) is mixed with ammonia. It is.
  • a “chemical solution comprising hydrogen fluoride water” refers to an aqueous solution containing hydrogen fluoride as a main component, and one or more components other than hydrogen fluoride (for example, a surfactant) are contained together with hydrogen fluoride. It is a concept that includes an aqueous solution mixed in a trace amount.
  • the second substrate processing method after the step of processing the substrate with the first chemical solution, water is supplied to the second region of the processing tank and the process is performed via the rectifying member.
  • the water is allowed to flow from the second region into the first region, and an upward flow is formed at least in the vicinity of the substrate in the first region, while the first chemical solution in the treatment tank is added with the water.
  • the upward flow in the treatment tank uniform, the liquid flow in the vicinity of the substrate surface of the substrate is made substantially uniform over the plate surface of the substrate, and the first chemical solution in the treatment tank is replaced with water. I can do it.
  • Such second substrate processing method force After the step of replacing the first chemical in the processing tank with the water, water is supplied to the first region of the processing tank or the processing tank A step of supplying water to the first region and the second region to stir the liquid at least in the vicinity of the substrate in the first region may be further provided.
  • a substrate processing method since the liquid is agitated in the vicinity of the substrate, it is possible to remove the deposits adhering to the plate surface of the substrate with a high removal rate.
  • the force S can be used to prevent the removed deposits from adhering to the substrate again.
  • the step of processing the substrate with the first chemical liquid includes the processing tank in which the processing liquid is stored and the substrate is accommodated in the first region. Supplying the first chemical solution to the second region of the first region, causing the first chemical solution to flow from the second region to the first region via the rectifying member, and at least the substrate in the first region.
  • the process liquid in the process tank may be replaced with the first chemical liquid while forming an upward flow in the vicinity.
  • the uniformity of the treatment using the first chemical solution in the plate surface of the substrate can be further improved.
  • water is supplied to the second region of the treatment tank and the first region is removed from the second region via the rectifying member.
  • a step of replacing the first chemical solution in the treatment tank with the water while allowing the water to flow into the region and forming an upward flow at least in the vicinity of the substrate in the first region.
  • the treatment liquid in the treatment tank is removed from the first treatment tank.
  • the supply amount per unit time of the first chemical solution supplied into the treatment tank in the step of replacing with the chemical solution is the step of replacing the first chemical solution in the treatment tank with the water.
  • the amount of water supplied into the treatment tank is substantially the same as the supply amount per unit time.
  • the processing uniformity within the wafer plate surface in particular, the processing within the wafer plate surface along the direction corresponding to the vertical direction when the wafer is placed in the processing bath.
  • the power S can be used to further improve the uniformity.
  • the step of processing the substrate with the first chemical liquid is performed after the step of replacing the processing liquid in the processing tank with the first chemical liquid.
  • the first chemical solution is supplied to the second region of the treatment tank, and the first chemical solution is caused to flow from the second region to the first region via the rectifying member.
  • the method may further include a step of immersing the substrate in the first chemical solution in the processing tank while forming an upward flow in the vicinity of the substrate.
  • the degree of processing on the substrate can be adjusted while ensuring uniformity of processing using the first chemical solution within the plate surface of the substrate.
  • the processing liquid may be water.
  • such a second substrate processing method further includes a step of replacing the second chemical solution in the processing tank with water after the step of processing the substrate with the second chemical solution, After the step of processing the substrate with the second chemical solution, the step of processing the substrate with the first chemical solution is performed, and the step of processing the substrate with the first chemical solution is performed as described above.
  • the treatment liquid replaced with a chemical solution may be the water supplied into the treatment tank in the step of replacing the second chemical liquid in the treatment tank with the water.
  • the second substrate processing method after the step of processing the substrate with the second chemical solution, water is supplied to the first region of the processing tank or the processing tank Supplying water to the first region and the second region, at least in the first region; A step of replacing the second chemical solution in the processing tank with the water while stirring the liquid in the vicinity of the substrate may be further provided.
  • the concentration of the second chemical solution in the vicinity of the plate surface of the substrate is kept substantially uniform over the plate surface, and the second chemical solution in the processing tank. It is possible to replace the chemical solution with water in a short time.
  • the step of processing the substrate with the second chemical liquid includes the processing in which the processing liquid is stored therein and the substrate is accommodated in the first region.
  • the second chemical solution is supplied to the first region of the tank, or the processing solution is stored therein and the substrate is accommodated in the first region.
  • the second chemical solution is supplied to the second region, and the treatment solution in the treatment tank is mixed with the second chemical solution while stirring the liquid at least in the vicinity of the substrate in the first region.
  • the step of replacing with may be included.
  • the concentration of the second chemical solution in the vicinity of the plate surface of the substrate can be increased to a desired concentration in a short time while maintaining substantially uniform over the plate surface.
  • the step of processing the substrate with the second chemical solution is after the step of replacing the processing solution in the processing tank with the second chemical solution.
  • the method may further include a step of immersing the substrate in the second chemical solution in the processing tank while stirring the liquid in the vicinity of the substrate.
  • the processing liquid may be water.
  • such a second substrate processing method further includes a step of replacing the first chemical solution in the processing tank with water after the step of processing the substrate with the first chemical solution, After the step of processing the substrate with the first chemical solution, the substrate is processed with the second chemical solution.
  • the processing solution replaced by the second chemical solution is used to replace the first chemical solution in the processing tank with the water.
  • the water supplied into the treatment tank may be used.
  • a process liquid is water.
  • the second substrate processing method first, a step of processing the substrate with the second chemical solution is performed, and then a step of processing the substrate with the first chemical solution. After that, the process of treating the substrate with the second chemical solution is performed again! / ⁇ .
  • the rectifying member comprises a rectifying plate having a plurality of through holes and dividing the inside of the processing tank into the first region and the second region,
  • the liquid supplied to the second region may flow from the second region into the first region through a through hole of the rectifying plate.
  • ultrasonic waves may be generated in the liquid in the processing tank.
  • the force S can be removed to remove deposits adhering to the plate surface of the substrate with a high removal rate.
  • a second substrate processing apparatus includes a processing tank that includes a first region that accommodates a substrate and a second region that is disposed below the first region, and the second substrate in the processing tank.
  • a rectifying member provided between one region and the second region and the second region of the treatment tank are connected to supply at least a first chemical into the second region of the treatment tank.
  • a control device for controlling supply wherein the control device supplies the first chemical liquid to the second region of the processing tank and accommodates the substrate from the second region via the rectifying member.
  • the first chemical solution is caused to flow into the first region, and the substrate is treated with the first chemical solution while forming an upward flow in the first region at least in the vicinity of the substrate.
  • the second chemical solution is supplied to the first region of the processing tank, or the first region and the second region of the processing tank. Supplying the second chemical solution to at least the substrate in the first region While our near! /, Te stirred liquid, processing the substrate by the second chemical liquid, to control the switching mechanism as
  • a substrate processing apparatus when a plurality of types of processing using a chemical solution are performed on the substrate in the same processing tank, the chemical solution is supplied into the processing tank for each processing. Change the method. Thereby, a board
  • substrate can be processed by the method suitable for each process. As a result, it is possible to efficiently perform a plurality of processes on the substrate and to improve the uniformity of the processes within the plate surface of the substrate.
  • processing using the first chemical solution in such a substrate processing apparatus processing using a chemical solution with extremely high reactivity with the substrate, for example, the first chemical solution made of aqueous ammonia is used.
  • the etching process of the silicon wafer which had been mentioned is mentioned.
  • a treatment using a chemical solution having a lower reactivity than the first chemical solution for example, hydrogen fluoride water is used.
  • One example is silicon wafer etching using a second chemical.
  • chemical solution comprising ammonia water refers to an aqueous solution containing ammonia as a main component, and includes an aqueous solution in which one or more components other than ammonia (for example, a surfactant) are mixed in a trace amount together with ammonia. It is.
  • a “chemical solution comprising hydrogen fluoride water” refers to an aqueous solution containing hydrogen fluoride as a main component, and a small amount of one or more types of components (for example, surfactant) other than hydrogen fluoride together with hydrogen fluoride. It is also a concept that includes an aqueous solution mixed in.
  • the second substrate processing apparatus after the control apparatus processes the substrate with the first chemical solution, water is supplied from the lower supply pipe to the second region of the processing tank. Supplying the water from the second region to the first region through the rectifying member and forming an upward flow at least in the vicinity of the substrate in the first region.
  • the switching mechanism may be controlled so that the first chemical solution is replaced with the water.
  • the control device supplies water from the upper supply pipe to the first region after replacing the first chemical solution in the processing tank with the water.
  • water is supplied from the upper supply pipe to the first area and water is supplied from the lower supply pipe to the second area, and the liquid is supplied at least near the substrate in the first area.
  • the switching mechanism may be controlled so as to stir.
  • the liquid is agitated in the vicinity of the substrate, the adhered matter adhering to the plate surface of the substrate can be removed with a high removal rate.
  • water is supplied not only to the first region but also to the second region, it is possible to promote the deposits removed from the substrate to rise above the treatment tank. As a result, it is possible to prevent the removed deposits from adhering to the substrate again.
  • the processing solution is stored therein and the substrate is in the first region.
  • the first chemical solution is supplied from the lower supply pipe to the second region of the treatment tank in which the first chemical solution is contained, and the first chemical solution is supplied from the second region to the first region via the rectifying member.
  • the switching mechanism may be controlled so that the processing liquid in the processing tank is replaced with the first chemical liquid while inflowing and forming an upward flow at least in the vicinity of the substrate in the first region. Good.
  • the flow of liquid in the vicinity of the plate surface of the substrate is made substantially uniform over the plate surface of the substrate, while the substrate plate of the substrate. Replace the liquid near the surface with the first chemical from the treatment liquid Can continue.
  • the uniformity of the treatment using the first chemical solution within the plate surface of the substrate can be further improved.
  • water is supplied to the second region of the treatment tank and the first region is removed from the second region via the rectifying member. When the water is allowed to flow into the region, and the first chemical solution in the treatment tank is replaced with the water while forming an upward flow at least in the vicinity of the substrate in the first region.
  • the control device replaces the processing liquid in the processing tank with the first chemical liquid
  • the supply amount per unit time of the chemical liquid supplied into the processing tank is the processing volume.
  • the switching mechanism may be controlled so that when the chemical solution in the tank is replaced with the water, the supply amount per unit time of the water supplied into the treatment tank is substantially the same.
  • a process liquid is water.
  • the control device when the control device processes the substrate with the first chemical solution, the control device replaces the processing solution in the processing tank with the first chemical solution.
  • the switching mechanism may be controlled so that the substrate is immersed in the first chemical solution in the processing tank while forming an upward flow at least in the vicinity of the substrate in the first region.
  • the processing liquid may be water.
  • the control device replaces the second chemical solution in the processing tank with water after processing the substrate with the second chemical solution.
  • the substrate is processed with the first chemical solution, and the first chemical solution is used to process the substrate with the first chemical solution.
  • the treatment liquid replaced by the chemical liquid is the water supplied into the treatment tank when replacing the second chemical liquid in the treatment tank. It may be. According to such a substrate processing apparatus, it is not necessary to separately provide a process for storing the processing liquid in the processing tank, so that the time required for the processing can be shortened while maintaining a high level of processing uniformity. be able to.
  • the control device supplies water to the first region from the upper supply pipe after processing the substrate with the second chemical solution.
  • water is supplied from the upper supply pipe to the first area, and water is supplied from the lower supply pipe to the second area, so that the substrate is at least near the substrate in the first area.
  • the switching mechanism may be controlled so that the second chemical solution in the treatment tank is replaced with the water while stirring the liquid.
  • the concentration of the second chemical solution in the vicinity of the plate surface of the substrate is kept substantially uniform over the plate surface, while the second in the treatment tank is maintained.
  • Replace the chemical solution with water in a short time In particular, when water is supplied not only to the first region but also to the second region, it is possible to promote floating of floating matter in the treatment tank upward. Thereby, it is possible to prevent floating substances from adhering to the substrate.
  • the processing solution is stored therein and the first region contains the processing solution.
  • the second chemical solution is supplied from the upper supply pipe to the first region of the processing tank in which the substrate is accommodated, or the processing solution is stored therein and the substrate is in the first region.
  • the second chemical solution is supplied from the upper supply pipe to the first region of the processing tank accommodated, and the second chemical solution is supplied from the lower supply pipe to the second region of the treatment tank.
  • the switching mechanism is configured to replace the processing liquid in the processing tank with the second chemical liquid while stirring the liquid at least in the vicinity of the substrate in the first region. You may control.
  • the concentration of the second chemical solution in the vicinity of the plate surface of the substrate can be increased to a desired concentration in a short time while keeping it substantially uniform over the plate surface! /, The ability to drill S
  • the control device processes the substrate with the second chemical liquid
  • the processing liquid in the processing tank is replaced with the second chemical liquid.
  • the second chemical solution is supplied from the upper supply pipe to the first area, or the second chemical liquid is supplied from the upper supply pipe to the first area.
  • stirring the liquid at least in the vicinity of the substrate in the first region the substrate is processed.
  • the switching mechanism may be controlled so as to be immersed in the second chemical solution in the tank.
  • the processing liquid may be water.
  • the control device replaces the first chemical solution in the processing tank with water after processing the substrate with the first chemical solution.
  • the substrate is processed with the second chemical solution, and the second chemical solution is used to process the substrate with the second chemical solution.
  • the treatment liquid replaced by the chemical liquid may be the water supplied into the treatment tank when replacing the second chemical liquid in the treatment tank. According to such a substrate processing apparatus, it is not necessary to provide a separate process for storing the processing liquid in the processing tank, so that the processing time can be shortened while maintaining high processing uniformity. can do.
  • control device first processes the substrate with the second chemical solution, and then processes the substrate with the first chemical solution. Thereafter, the switching mechanism may be controlled such that the substrate is processed again by the second chemical solution.
  • the rectifying member has a rectifying plate in which a plurality of through holes are formed, and the liquid supplied to the second region passes through the rectifying plate.
  • the second region may flow into the first region through a through hole.
  • an upward flow having uniformity in the horizontal direction is formed in the first region of the processing tank from the second region of the processing tank by a rectifying member having a simple configuration. The liquid can flow into the first region.
  • the second substrate processing apparatus further includes a plurality of discharge members provided in the first region of the processing tank so that the arrangement positions along the vertical direction are different from each other.
  • the upper supply pipe is connected to the discharge member, and the processing pipe is interposed through the discharge member. The liquid may be discharged into the first region of the treatment tank.
  • the second substrate processing apparatus may further include an ultrasonic generator for generating ultrasonic waves in the liquid in the processing tank. According to such a substrate processing apparatus, it is possible to remove deposits adhering to the plate surface of the substrate with a high removal rate.
  • a second program includes a processing tank including a first region that accommodates a substrate and a second region disposed below the first region, and the first region in the processing tank; A program that is executed by a control device that controls a substrate processing apparatus that includes a rectifying member provided between the second region and the second region. Supplying the first chemical solution to the second region and causing the first chemical solution to flow from the second region to the first region in which the substrate is accommodated via the rectifying member; A step of treating the substrate with the first chemical solution while forming an upward flow at least in the vicinity of the substrate; and supplying a second chemical solution to the first region of the treatment tank, or of the treatment tank. A second chemical solution is supplied to the first region and the second region. Then, the substrate processing apparatus performs a substrate processing method including the step of processing the substrate with the second chemical solution while stirring the liquid at least in the vicinity of the substrate in the first region. It is characterized by that.
  • a second recording medium includes a processing tank that includes a first area that accommodates a substrate and a second area that is disposed below the first area, and the first area in the processing tank. And a rectifying member provided between the second region and a recording medium on which a program to be executed by a control device that controls the substrate processing apparatus is recorded.
  • the first chemical solution is supplied to the second region of the treatment tank, and the substrate is accommodated from the second region to the first region via the rectifying member.
  • a rectifying member is provided inside, a first region that is located above the rectifying member and accommodates the substrate, and a second region that is located below the rectifying member.
  • the substrate is treated with either the first chemical solution or the second chemical solution in a treatment tank containing the first chemical solution and the second chemical solution.
  • a step of processing the substrate with the set chemical solution In the step of processing the substrate with the set chemical solution, the set chemical solution is the first chemical solution.
  • the first chemical solution is supplied to the second region of the processing tank, and the first chemical solution flows into the first region in which the substrate is accommodated from the second region via the rectifying member. And at least near the substrate in the first region. Then, the substrate is treated with the first chemical solution while forming an upward flow, and when the set chemical solution is the second chemical solution, the second chemical solution is disposed in the first region of the treatment tank. Or the second chemical solution is supplied to the first region and the second region of the treatment tank, and the liquid is stirred at least in the vicinity of the substrate in the first region. However, the substrate is treated with the second chemical solution.
  • a treatment using a chemical solution having extremely high reactivity with the substrate for example, a silicon wafer using a chemical solution made of aqueous ammonia.
  • the etching process is mentioned.
  • a treatment using a chemical solution having a lower reactivity with the substrate than the first chemical solution for example, hydrogen fluoride water is used. Etching treatment of a silicon wafer using a chemical solution.
  • chemical solution comprising ammonia water refers to an aqueous solution containing ammonia as a main component, and also includes an aqueous solution in which a small amount of one or more components other than ammonia (for example, a surfactant) is mixed with ammonia. It is.
  • a “chemical solution comprising hydrogen fluoride water” refers to an aqueous solution containing hydrogen fluoride as a main component, and one or more components other than hydrogen fluoride (for example, surface active substances). It is also a concept that includes an aqueous solution in which a small amount of (adhesive agent) is mixed.
  • the third substrate processing method further includes a step of replacing the chemical solution in the processing tank with water after the step of processing the substrate with the set chemical solution, wherein the set chemical solution is a first solution.
  • the set chemical solution is a first solution.
  • the water is supplied to the second region of the treatment tank, and the water is caused to flow from the second region to the first region in which the substrate is accommodated through the rectifying member, The first chemical solution is replaced with the water while forming an upward flow at least in the vicinity of the substrate in the first region.
  • the set chemical solution is the second chemical solution
  • the treatment is performed. Supply the water to the first region of the tank or supply the water to the first region and the second region of the treatment tank, and at least near the substrate in the first region!
  • the upward flow in the processing tank is made uniform so that the liquid flow in the vicinity of the substrate surface of the substrate is reduced.
  • the first chemical solution in the treatment tank can be replaced with water while being substantially uniform over the plate surface.
  • substrate can further be improved.
  • the second chemical solution is stored in the processing tank, the liquid is agitated in the vicinity of the substrate, so that the concentration of the second chemical solution in the vicinity of the plate surface of the substrate is kept substantially uniform over the plate surface.
  • the second chemical solution in the treatment tank can be replaced with water in a short time.
  • water is supplied not only to the first region but also to the second region, it is possible to promote the force S to lift the suspended matter in the treatment tank upward. As a result, it is possible to prevent floating substances from adhering to the substrate.
  • the step of processing the substrate with the set chemical solution includes an internal processing solution. Is stored and the first chemical solution is supplied to the second region of the processing tank in which the substrate is accommodated in the first region, and the second region is supplied to the first region via the rectifying member.
  • the first chemical supplied into the processing tank in the step of replacing the processing liquid in the processing tank with the first chemical liquid is substantially the same as the supply amount of water supplied to the treatment tank in the step of replacing the first chemical solution in the treatment tank with the water. You may make it be.
  • the processing uniformity within the substrate surface of the substrate in particular, the processing within the substrate surface of the substrate along the direction corresponding to the vertical direction when the substrate is placed in the processing tank. It is possible to improve the uniformity of the power.
  • the treatment liquid is preferably water.
  • the rectifying member has a large number of through holes and divides the inside of the processing tank into the first region and the second region.
  • the liquid that has a current plate and is supplied to the second region may flow from the second region into the first region through a through hole of the current plate.
  • the third substrate processing method further comprises a step of inputting information on which of the first chemical solution and the second chemical solution is used to process the substrate. Based on the input information, it may be set which of the first chemical solution and the second chemical solution is used to process the substrate. According to such a substrate processing method, for example, an operator or the like can input the setting as to whether the processing is performed by using the first chemical solution or the second chemical solution from the outside.
  • ultrasonic waves may be generated in the liquid in the processing tank in at least one of the steps.
  • the force S can be removed to remove deposits adhering to the plate surface of the substrate with a high removal rate.
  • a third substrate processing apparatus is a substrate processing apparatus that processes a substrate using either the first chemical solution or the second chemical solution, and a first region that accommodates the substrate;
  • a treatment tank including a second area disposed below the first area, a rectifying member provided between the first area and the second area in the treatment tank, and the treatment tank. Is connected to the second region of the processing tank and can supply at least the first chemical solution into the second region of the processing tank.
  • a switching mechanism that is connected to a side supply pipe and that switches the supply of liquid from the lower supply pipe and the upper supply pipe, and is connected to the switching mechanism, and is connected to the switching mechanism from the lower supply pipe in the second region of the processing tank.
  • a control device that controls the supply of liquid to the first tank and the supply of liquid from the upper supply pipe into the first region of the processing tank, and the control device has a first chemical solution and a first liquid for the substrate.
  • a control unit configured to control the switching mechanism based on the setting content in the setting unit, and the control device is configured to control the switching device.
  • the first chemical solution in the treatment tank is used.
  • the switching mechanism is controlled so that the substrate is treated with the second chemical solution while stirring the liquid.
  • a substrate processing apparatus when a plurality of types of processing using a chemical solution are performed on the substrate in the same processing tank, the chemical solution is supplied to the processing tank for each processing. Change the method. Thereby, a board
  • substrate can be processed by the method suitable for each process. As a result, it is possible to improve the processing uniformity within the surface of the substrate.
  • a “chemical solution comprising hydrogen fluoride water” refers to an aqueous solution containing hydrogen fluoride as a main component, and a small amount of one or more types of components (for example, surfactant) other than hydrogen fluoride together with hydrogen fluoride. It is also a concept that includes an aqueous solution mixed in.
  • the control device treats the substrate with the set chemical solution and the set chemical solution is the first chemical solution
  • Water is supplied from the lower supply pipe to the second region, and the water flows from the second region to the first region via the rectifying member, and rises at least near the substrate in the first region.
  • the first chemical solution in the treatment tank is replaced with the water while forming a flow, and the set chemical solution is a second chemical solution
  • the first region is introduced from the upper supply pipe. Water is supplied to the first region from the upper supply pipe and water is supplied to the second region from the lower supply pipe, and at least in the first region. While stirring the liquid in the vicinity of the substrate, the second chemical solution in the processing tank is removed.
  • the switching mechanism may be controlled so that the water is replaced.
  • the upward flow in the processing tank is made uniform so that the liquid flow in the vicinity of the plate surface of the substrate is reduced.
  • the first chemical solution in the treatment tank can be replaced with water while being substantially uniform over the plate surface.
  • the uniformity of the treatment using the first chemical solution within the plate surface of the substrate can be further improved.
  • the second chemical solution is stored in the processing tank, the liquid is agitated in the vicinity of the substrate, so that the concentration of the second chemical solution in the vicinity of the plate surface of the substrate is substantially reduced over the plate surface.
  • the second chemical in the treatment tank can be replaced with water in a short time while keeping it uniform.
  • the control device when processing the substrate with the first chemical solution, the control device, when processing the substrate with the first chemical solution, The first chemical is supplied to the second region of the processing tank in which the processing liquid is stored and the substrate is accommodated in the first region, and the second chemical is supplied from the second region via the rectifying member.
  • the first chemical liquid is allowed to flow in, and the processing liquid in the processing tank is replaced with the first chemical liquid while forming an upward flow at least in the vicinity of the substrate in the first region, and the processing tank
  • the supply amount per unit time of the first chemical liquid supplied into the treatment tank and the first chemical liquid in the treatment tank are When replacing with the water, the switching mechanism may be controlled so that the amount of water supplied into the treatment tank per unit time is substantially the same.
  • the treatment liquid is preferably water.
  • the rectifying member has a rectifying plate in which a plurality of through holes are formed, and the liquid supplied to the second region is: It may flow from the second region into the first region through the through hole of the current plate.
  • the upward flow having uniformity in the horizontal direction is formed in the first region of the processing tank by the rectifying member having a simple configuration, and the first region of the processing tank. Liquid can flow into the
  • the third substrate processing apparatus further includes a plurality of ejection members provided in the first region of the processing tank so that the arrangement positions along the vertical direction are different from each other.
  • the upper supply pipe may be connected to the discharge member, and liquid may be discharged into the first region of the processing tank via the discharge member.
  • the third substrate processing apparatus inputs information on whether or not the substrate is processed due to the displacement of the first chemical solution and the second chemical solution! And an input unit configured to set, based on the information input in the input unit, whether to process the substrate with the first chemical solution or the second chemical solution It may be configured as follows. According to such a substrate processing apparatus, for example, an operator or the like can input settings in the setting unit from the outside.
  • the third substrate processing apparatus may further include an ultrasonic generator for generating ultrasonic waves in the liquid in the processing tank.
  • an ultrasonic generator for generating ultrasonic waves in the liquid in the processing tank.
  • a third program includes a processing tank including a first area that accommodates a substrate and a second area that is disposed below the first area, and the first area in the processing tank; A program that is executed by a control device that controls a substrate processing apparatus that includes a rectifying member provided between the first region and the second region. A step of setting which of the chemical solution and the second chemical solution is used to process the substrate; and a step of processing the substrate with the set chemical solution, wherein the substrate is treated with the set chemical solution.
  • the set chemical solution is the first chemical solution
  • the first chemical solution is supplied to the second region of the treatment tank and the second chemical solution is passed through the rectifying member.
  • the substrate processing apparatus executes a substrate processing method of processing the substrate with the second chemical solution while stirring the liquid at least in the vicinity of the substrate in the first region.
  • a third recording medium includes a processing tank including a first area that accommodates a substrate and a second area that is disposed below the first area, and the second recording medium in the processing tank.
  • a recording medium on which a program executed by a control device that controls a substrate processing apparatus including a rectifying member provided between the first area and the second area is recorded, wherein the program When executed by the apparatus, a step of setting whether to process the substrate by! / Of the first chemical solution and the second chemical solution, and processing the substrate by the set chemical solution And when the set chemical solution is the first chemical solution, the first chemical solution is supplied to the second region of the processing tank.
  • the second region through the flow straightening member The first chemical solution is allowed to flow into the first region in which the substrate is accommodated, and an upward flow is formed in the first region at least in the vicinity of the substrate, while the substrate is placed on the first chemical solution.
  • the set chemical liquid is the second chemical liquid
  • the second chemical liquid is supplied to the first area of the processing tank or the first area and the first of the processing tank are supplied.
  • a substrate processing method is provided in which a second chemical solution is supplied to two regions, and the substrate is treated with the second chemical solution while stirring the liquid at least in the vicinity of the substrate in the first region.
  • the apparatus is characterized by being executed.
  • FIG. 1 is a diagram showing a schematic configuration of first to third embodiments of a substrate processing apparatus according to the present invention.
  • FIG. 2 is a cross-sectional view along the II Il spring in FIG.
  • FIG. 3 is a diagram for explaining first to third embodiments of a substrate processing method according to the present invention.
  • FIG. 4 is a diagram for explaining first to third embodiments of a substrate processing method according to the present invention.
  • FIG. 5 is a diagram for explaining first to third embodiments of a substrate processing method according to the present invention.
  • FIG. 6 is a view for explaining first to third embodiments of a substrate processing method according to the present invention.
  • FIG. 7 is a diagram for explaining first to third embodiments of a substrate processing method according to the present invention.
  • FIG. 8 is a diagram for explaining first to third embodiments of a substrate processing method according to the present invention.
  • FIG. 9 is a table for explaining a second embodiment of the substrate processing method according to the present invention.
  • FIG. 10 is a diagram for explaining second and third embodiments of a substrate processing method according to the present invention.
  • FIG. 11 is a diagram for explaining a second and a third embodiment of the substrate processing method according to the present invention.
  • FIG. 12 illustrates the second and third embodiments of the substrate processing method according to the present invention.
  • FIG. 13 is a table for explaining a third embodiment of the substrate processing method according to the present invention.
  • FIG. 14 is a table for explaining a third embodiment of the substrate processing method according to the present invention.
  • the present invention is not limited to the application to the etching process and the subsequent rinsing process, and can be widely applied to the substrate processing.
  • FIGS. 1 to 8 are diagrams for explaining a first embodiment of a substrate processing apparatus, a substrate processing method, a substrate processing program, and a program recording medium.
  • FIG. 1 is a diagram showing a schematic configuration of the substrate processing apparatus
  • FIG. 2 is a cross-sectional view showing a cross section taken along line II-II in FIG. 1
  • FIGS. 3 to 8 are shown in FIG. It is a figure for demonstrating the substrate processing method which can be performed using a substrate processing apparatus.
  • the substrate processing apparatus 10 in the present embodiment includes a processing tank 12 that accommodates a wafer W, a liquid supply facility 40 that supplies a processing liquid into the processing tank 12, and a target object to be processed.
  • a holding member (also called a wafer boat) 20 that holds a wafer (substrate to be processed) W and a control device 18 that controls the operation of each component are provided.
  • a rectifying member 28 is provided in the treatment tank 12.
  • the inside of the processing tank 12 is divided into a first region 12 a located above the rectifying member 28 and a second region 12 b located below the rectifying member 28 by the rectifying member 28.
  • Such a substrate processing apparatus 10 sequentially supplies a plurality of types of processing liquids from the liquid supply equipment 40 into the processing tank 12, and performs various processing on the wafer W accommodated in the processing tank 12.
  • the It is a device for applying.
  • the substrate processing apparatus 10 further includes an ultrasonic generator 30 capable of generating ultrasonic waves in the processing liquid stored in the processing tank 12. Yes. Therefore, according to the substrate processing apparatus 10 in the present embodiment, the wafer W accommodated in the processing tank 12 can be ultrasonically cleaned.
  • the liquid supply facility 40 includes a lower supply pipe 41 connected to the second region 12b of the processing tank 12, and a first to third connection connected to the first region 12a of the processing tank 12.
  • An upper supply pipe 42, 43, 44, a lower supply pipe 41, and a pure water supply pipe 48 connected to the upper supply pipe 42, 43, 44 are provided.
  • the pure water supply pipe 48 is connected to a pure water source 64.
  • the pure water supply pipe 48 has a discharge mechanism.
  • the “treatment liquid” referred to here is a liquid used for the treatment, and is a concept including not only pure water (DIW) but also a chemical solution.
  • the pure water source 64 can be configured by a known storage facility that can store pure water (DIW), such as a tank that stores the processing liquid.
  • the discharge mechanism 65 can be composed of a known facility or device such as a pump.
  • an air-driven bellows pump that can adjust the discharge amount by adjusting the air pressure can be used.
  • the liquid supply facility 40 is connected to the control device 18.
  • the discharge mechanism 65 is controlled by the control device 18. Specifically, the discharge mechanism 65 is driven and stopped, the processing liquid supply flow rate isotropic force S when the discharge mechanism 65 is driven, and the control device 18. Note that the discharge mechanism 65 is an air-driven If the discharge mechanism 65 is other than an air-driven bellows pump, for example, by controlling the amount of electric power to be input, the pump at the time of driving the discharge mechanism 65 The discharge amount can be adjusted.
  • the switching mechanism 50 (first to sixth opening / closing non-reflects, 51, 52, 53, 54, 55, 56) is used.
  • the first opening / closing valve 51 is connected to the lower supply pipe 41.
  • the second open / close valve 52 is connected to the first upper supply pipe 42.
  • the third on-off valve 53 is connected to the second upper supply pipe 43.
  • the fourth open / close valve 54 is connected to the third upper supply pipe 44.
  • the first to fourth open / close valves 51-54 open and close the connection state (communication state) between the pure water supply pipe 48 and the supply pipes 41-44 connected to the valves 51-54. It has become. That is, the supply of the processing liquid into the processing tank 12 via the supply pipes 41 44 can be controlled by opening and closing the open / close valves 51-54.
  • the liquid supply facility 40 has a plurality of chemical liquid element sources 61 and 62 storing different chemical liquid elements.
  • the chemical liquid element supplied from the chemical liquid element sources 61 and 62 and the pure water supplied from the pure water source 64 are mixed to generate a chemical liquid (treatment liquid) having a desired concentration.
  • a first chemical element source 61 that stores high-concentration aqueous ammonia (NH OH) as a chemical element
  • a second chemical element 62 that stores hydrogen fluoride water containing hydrogen (HF) at a high concentration as a chemical element and a force S are provided.
  • the fifth open / close valve 55 of the switching mechanism 50 described above is connected to the first chemical element source 61, and the sixth open / close valve 56 is connected to the second chemical element source 62. Therefore, by opening the fifth open / close valve 55, the high concentration ammonia water sent from the first chemical element source 61 is mixed into the pure water sent from the pure water supply pipe 48, and the desired concentration as the processing liquid is obtained. Ammonia water (first chemical) can be generated.
  • the high-concentration hydrogen fluoride water sent from the second chemical element source 62 is mixed into the pure water sent from the pure water supply pipe 48, and the treatment liquid As a result, hydrogen fluoride water (second chemical solution) having a desired concentration can be produced.
  • the switching mechanism 50 is connected to the control device 18. First through sixth open / close valves 51-56 The opening / closing operation and the opening degree are controlled by the control device 18. As a result, the force S for supplying pure water or a chemical solution having a desired concentration into the treatment tank 12 at a desired flow rate through each of the supply pipes 41 to 44 is reduced.
  • switching mechanism 50 is merely an example.
  • Known equipment, equipment, or the like that can supply a treatment liquid having a desired concentration into the treatment tank 12 at a desired flow rate via a desired supply pipe 41-44 can be used as the switching mechanism 50.
  • the liquid supply facility 40 is attached to the processing tank 12 and first to fourth discharge members 71, 72, 73, which discharge the processing liquid into the processing tank 12. 74.
  • the ends of the supply pipes 41-44 are connected to first to fourth discharge members 71-74 that discharge the processing liquid into the processing tank 12.
  • each of the discharge members 71, 72, 73, 74 is attached to the treatment tank 12 at four different vertical positions.
  • the first discharge member 71 is disposed in the second region 12 b of the processing tank 12 and is connected to the lower supply pipe 41.
  • the second discharge member 72 is disposed at the lowermost position in the first region 12 a of the processing tank 12 and is connected to the first upper supply pipe 42.
  • the third discharge member 73 is disposed at a position higher in the vertical direction than the second discharge member 72 in the first region 12a of the processing tank 12, and is connected to the second upper supply pipe 43.
  • the fourth discharge member 74 is disposed at a position higher in the vertical direction than the second discharge member 72 and the third discharge member 73 in the first region 12a of the processing tank 12, and the third upper supply Connected to tube 44.
  • the processing liquid discharged from the second discharge member 72 is mainly around the lower region of the wafer W disposed in the first region 12a of the processing tank 12. Will be supplied. Further, as shown in FIG. 1, the processing liquid discharged from the third discharge member 73 is mainly supplied around the central region of the wafer W disposed in the first region 12a of the processing tank 12. It becomes like.
  • the processing liquid discharged from the fourth discharge member 74 is mainly around the upper region of the wafer W arranged in the first region 12a of the processing tank 12. Will be supplied.
  • the fourth discharge member 74 is shown in a cross-sectional view of the treatment tank 12.
  • the first to fourth discharge members 71, 72, 73, 74 differ only in the arrangement positions in the vertical direction, and the fourth discharge member 74 shown in FIG.
  • the first to third discharge members 71, 72, 73 have the same configuration.
  • each of the discharge members 71, 72, 73, 74 is constituted by a pair of nozzles provided on opposite side walls of the treatment tank 12.
  • the nozzle is formed as an elongated cylindrical member extending in the horizontal direction along the wall surface of the treatment tank 12.
  • the two cylindrical members forming the discharge members 71, 72, 73 and 74 are arranged in the same position in the vertical direction! / (See FIG. 1).
  • each cylindrical member forming the discharge members 71, 72, 73, 74 is closed, and the other end is connected to the corresponding supply pipes 41, 42, 43, 44.
  • each cylindrical member is provided with a number of discharge ports 71a, 72a, 73a, 74a arranged at regular intervals along the longitudinal direction thereof.
  • the self-placement positions of the discharge ports 71a, 72a, 73a, and 74a are determined based on the placement position of the processing target wafer W held by the holding member 20, as will be described later.
  • the discharge direction from each discharge member 71, 72, 73, 74 can be changed as appropriate!
  • discharge members 71, 72, 73, 74 are merely an example, and a known member or the like can be used. Further, the discharge member may be omitted, and each supply pipe 41-44 may be directly connected to the treatment tank.
  • the pure water supply pipe 48 may be provided with an adjusting device 67 for adjusting various conditions of the processing liquid flowing in the pure water supply pipe 48.
  • an adjustment device 67 include a gas concentration adjustment device that adjusts the dissolved gas concentration of the treatment liquid, a bubble amount adjustment device that adjusts the amount of bubbles contained in the treatment liquid, and a temperature adjustment that adjusts the temperature of the treatment liquid.
  • a device or the like can be selected.
  • the treatment tank 12 has a substantially rectangular parallelepiped outline as shown in Figs. An upper opening 12c for taking in and out the wafer W is formed in the processing tank 12 as described later.
  • the A discharge pipe 13 for discharging the stored processing liquid is provided at the bottom of the processing tank 12 so as to be openable and closable.
  • an outer tank 15 is provided so as to surround the upper opening 12c of the processing tank 12.
  • the outer tank 15 collects the processing liquid overflowing from the upper opening 12c of the processing tank 12.
  • a discharge pipe 16 for discharging the collected treatment liquid is also provided in the outer tank 15 so as to be openable and closable.
  • the treatment tank 12 and the outer tank 15 are formed using, for example, quartz having high chemical resistance. Further, the thickness of the bottom of the treatment tank 12 is irradiated from the type of material constituting the treatment tank 12 and the ultrasonic generator 30 so that the ultrasonic wave from the ultrasonic generator 30 described later can be transmitted. It is determined in consideration of the frequency of the ultrasonic waves.
  • the processing liquid discharged from the discharge pipes 13 and 16 of the processing tank 12 and the outer tank 15 may be discarded as it is or supplied again into the processing tank 12 via a filter or the like. You may do it.
  • a circulation pipe 16a connected to the outer tank 15 and the pure water source 64 may be provided.
  • the rectifying member 28 is a member for adjusting the flow of the processing liquid flowing from the second region 12b of the processing tank 12 into the first region 12a and forming an upward flow in the first region 12a of the processing tank 12.
  • the “upward flow” here means a flow from the lower side to the upper side, and is not limited to the flow parallel to the vertical direction.
  • the rectifying member 28 is made of a rectifying plate having a large number of through holes 29.
  • the rectifying plate 28 is supported so that the plate surface thereof is parallel to the horizontal plane.
  • a circular through hole 29 is formed on almost the entire surface of the rectifying plate 28 including the region immediately below the wafer W accommodated in the first region 12a of the treatment tank 12. .
  • the through holes 29 are regularly arranged on the rectifying plate 28. Therefore, according to such a rectifying plate 28, the upward flow passing along the vertical direction at a substantially uniform flow velocity in each position on the virtual horizontal surface in the first region 12a of the processing tank 12 is supplied to the first flow path of the processing tank 12. It can be formed in one region 12a. In other words, speed variation due to horizontal position A reduced upward flow along the vertical direction can be formed over substantially the entire first region 12a of the treatment tank 12.
  • the rectifying plate 28 can be formed of the same material as that of the processing tank 12. Further, the thickness of the current plate 28 is the same as the thickness of the bottom of the treatment tank 12 described above, so that the ultrasonic wave from the ultrasonic generator 30 can be transmitted, It is determined in consideration of the frequency of the ultrasonic wave emitted from the sound wave generator 30.
  • the rectifying member 28 having such a configuration is merely an example, and various known rectifying members can be used.
  • the holding member 20 that holds the wafer W will be described.
  • the holding member 20 has four rod-shaped members 22 extending in a substantially horizontal direction, and a base 24 that cantilever-supports the four rod-shaped members 22 from one side. .
  • the rod-shaped member 22 supports a plurality of wafers W processed at a time, for example, 50 wafers W from below.
  • each rod-like member 22 is formed with grooves (not shown) arranged at regular intervals along the longitudinal direction thereof.
  • the wafer W engages with this groove, and the plate surface of each wafer W is substantially orthogonal to the extending direction of the rod-shaped member, that is, the plate surface of each wafer W is along the vertical direction. It is held by the holding member 20 (see FIG. 1).
  • the arrangement pitch of the ejection ports 71a-74a of the ejection members 71-74 described above is substantially the same as the arrangement pitch of the wafers W held by the holding member 20.
  • the discharge ports 72a, 73a, and 74a of the second to fourth discharge members 72, 73, and 74 that supply the processing liquid directly to the first region 12a of the treatment tank 12 are adjacent to each other held by the holding member 20. It is arranged so that the processing liquid can be discharged between the wafers W (in the direction of the arrow in Fig. 2).
  • the base 24 of the holding member 20 is connected to a lifting mechanism (not shown).
  • a lifting mechanism (not shown).
  • the wafer W can be accommodated in the first region 12a of the processing tank 12, and the processing liquid stored in the processing tank 12 can be accommodated. It is also possible to immerse the wafer W in the wafer.
  • the lifting mechanism is connected to the control device 18.
  • the accommodation of the wafer W in the first region 12a of the processing tank 12 and the discharge of the wafer W from the first region 12a of the processing tank 12 are controlled. It is controlled by the control device 18.
  • the ultrasonic generator 30 has a vibrator 38 attached to the bottom outer surface of the treatment tank 12, a high-frequency drive power source 32 for driving the vibrator 38, and an ultrasonic oscillator 34 connected to the high-frequency drive power source 32. ing.
  • a plurality of vibrators 38 are provided, and the vibrators 38 are arranged so as to partially occupy the outer surface of the bottom of the treatment tank 12.
  • the ultrasonic generator 30 further includes an ultrasonic oscillator 34 and a drive switching mechanism 36 connected to each transducer 38. With this drive switching mechanism 36, it is possible to drive the plurality of vibrators 38 as a whole, or to individually drive one or more vibrators 38 individually.
  • ultrasonic waves When the vibrator 38 is driven to vibrate, ultrasonic waves propagate to the processing liquid stored in the first region 12a of the processing tank 12 via the bottom of the processing tank 12 and the rectifying member 28. Thereby, ultrasonic waves are generated in the processing liquid in the processing tank 12.
  • the ultrasonic generator 30 is connected to the control device 18, and the control device 18 controls the application of ultrasonic waves to the processing liquid.
  • control device 18 As described above, the control device 18 is connected to each component of the substrate processing apparatus 10 and controls the operation of each component.
  • the control device 18 has a controller 19a composed of a CPU, and a recording medium 19b connected to the controller 19a.
  • the recording medium 19b stores a program power for executing a processing method of the wafer W to be processed, which will be described later, and various setting data.
  • the recording medium 19b can be composed of a memory such as ROM and RAM, a hard disk, a disk-shaped recording medium such as a CD-ROM, and other known recording media.
  • FIG. 1 a wafer W processing method that can be performed by the substrate processing apparatus 10 having such a configuration will be described mainly with reference to FIGS. 3 to 8.
  • FIG. 1 a wafer W processing method that can be performed by the substrate processing apparatus 10 having such a configuration
  • pure water is stored in the treatment tank 12 as a treatment liquid.
  • the discharge mechanism 65 is driven by a signal from the control device 18, and pure water stored in the pure water source 64 is sent toward the switching mechanism 50 through the pure water supply pipe 48.
  • Net The pure water flowing in the water supply pipe 48 is adjusted by the adjusting device 67 in terms of the dissolved gas concentration, the amount of mixed bubbles, the temperature, and the like.
  • the fifth opening / closing valve 55 and the sixth opening / closing valve 56 of the switching mechanism 50 are closed based on a signal from the control device 18. Therefore, the chemical elements from the first chemical element source 61 and the second chemical element source 62 are not mixed into the pure water fed from the pure water supply pipe 48. That is, pure water is supplied into the treatment tank 12 as a treatment liquid.
  • the first to fourth on-off valves 51, 52, 53, 54 of the switching mechanism 50 are all opened based on a signal from the control device 18. Accordingly, pure water is supplied into the treatment tank 12 from all of the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. For this reason, it is possible to set a large amount of pure water supplied per unit time (for example, 40 to 901 / min). As a result, it is possible to save pure water in the treatment tank 12 efficiently in a short time with the force S.
  • the wafer W is accommodated in the first region 12a of the processing bath 12.
  • the lifting mechanism (not shown) lowers the holding member 20 based on a signal from the control device 18.
  • the holding member 20 holds a predetermined number (for example, 50) of wafers W to be processed.
  • a plurality of wafers W force S are accommodated in the first region 12a of the processing tank 12, and are immersed in the pure water stored in the processing tank 12.
  • first step and the second step may be performed in the reverse order.
  • the second step may be performed in the reverse order.
  • the first step and the second step may be performed in parallel.
  • Ammonia water (first chemical solution) is supplied to the region 12b, and the pure water in the treatment tank 12 is replaced with ammonia water. Specifically, first, the output of the discharge mechanism 65 is reduced by a signal from the control signal 18. Further, the fifth opening / closing valve 55 of the switching mechanism 50 is opened. As a result, pure water fed from the pure water supply pipe 48 is added to the first chemical element source 61. High-concentration ammonia water comes to be mixed. In addition, the second to fourth on-off valves 72, 7 3, and 74 are closed. As a result, as shown in FIG. 4, the ammonia water (chemical solution) diluted to a predetermined concentration is used as a processing liquid through the lower supply pipe 41 to the second region 12b of the processing tank 12 (for example, 40%). -50 / min).
  • the lower supply pipe 41 is connected to the pair of first discharge members 71.
  • the chemical solution fed from the lower supply pipe 41 is discharged to the second region 12b of the processing tank 12 through the first discharge member 71.
  • the pair of first discharge members 71 are symmetrically disposed on the pair of wall surfaces of the opposing treatment tank 12 so as to face each other.
  • each first discharge member 71 discharges the chemical liquid obliquely downward, and the chemical liquid discharged from the different discharge members 71 forms a symmetric flow in the second region 12b. .
  • the chemical liquid discharged from one first discharge member 71 and the chemical liquid discharged from the other first discharge member 71 collide with each other at the center of the second region 12b, and the first discharge The flow along the discharge direction from the member 71 is canceled.
  • the local chemical flow force S along the specific direction in the second region 12b, the wall surface of the treatment tank 12 and the rectifying plate 28 are canceled out, and the pressure in the second region 12b is substantially uniform.
  • substantially the same amount of the chemical solution passes through each of the large number of through holes 29 of the current plate 28 and flows along the vertical direction from the second region 12b to the first region 12a.
  • the inflow of the chemical solution from the second region 12b into the first region 12a is performed substantially uniformly over substantially the entire region on the rectifying plate 28.
  • an upward flow is formed in the first region 12a of the treatment tank 12, and the pure water in the treatment tank 12 is replaced by the chemical solution from the lower side of the treatment tank 12.
  • the chemical solution As shown in FIG. 4, as the chemical solution is supplied into the treatment tank 12, the treatment liquid that has been stored in the treatment tank 12 until then is approximately the same amount as the amount of chemical solution flowing into the treatment tank 12. Then, it is discharged from the upper opening 12c of the treatment tank 12 to the outer tank 15. That is, according to the present embodiment, the pure water in the treatment tank 12 can be efficiently replaced with the chemical solution (ammonia water), and the amount of the chemical solution required for the replacement can be saved.
  • the chemical solution ammonia water
  • the aqueous ammonia flowing into the first region 12a from the second region 12b causes the liquid flow in the first region 12a to be directed upward as a whole. Therefore, the floating force floating in the processing tank 12, for example, the particles removed from the wafer W by the etching process, floats upward in the processing tank 12, and further flows out to the outer tank 15. . As a result, the force S prevents the suspended matter (particles) from adhering to the wafer W.
  • the wafer W is immersed in the ammonia water (chemical solution) while supplementing the treatment water 12 with the ammonia water (chemical solution).
  • the open / close state of the switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from the third step described above. Therefore, ammonia water continues to be supplied to the second region 12b of the processing tank 12 at a predetermined flow rate (for example, 40 to 501 / min). This step is carried out, for example, for a few minutes.
  • the flow of ammonia water on the plate surface of the wafer W to be processed is not limited to the constant concentration of ammonia water around the wafer W to be processed disposed in the first region 12a of the processing tank 12.
  • the flow velocity is substantially uniform over the plate surface. Therefore, even though the silicon wafer W to be processed has a sharp reactivity with respect to the ammonia water, the etching amount in this process can be made substantially uniform over the plate surface of the wafer W to be processed.
  • the floating substance floating in the treatment tank 12 is lifted upward in the treatment tank 12, and In addition, it can be poured into the outer tank 15. As a result, it is possible to prevent the floating material (particulate) from adhering to the wafer W.
  • the pure water is supplied to the second region 12b, and the ammonia water in the treatment tank 12 is replaced by the pure water. Specifically, the fifth opening / closing valve 55 of the switching mechanism 50 is closed by a signal from the control signal 18. As a result, mixing of high-concentration ammonia water from the first chemical element source 61 into the pure water fed from the pure water supply pipe 48 is stopped. On the other hand, the open / close state of each open / close valve of the other switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from the fourth step described above. As a result, pure water is supplied to the second region 12b of the treatment tank 12 at a predetermined flow rate (for example, 40 to 501 / min). That is, the supply amount of the processing liquid supplied to the second region 12b of the processing tank 12 is substantially constant from the third step to the fifth step.
  • a predetermined flow rate for example, 40 to 501 / min
  • each first discharge member 71 discharges pure water obliquely downward, and the pure water discharged from different discharge members 71 is in the second region 12b.
  • a symmetric flow is formed inside. Therefore, the pure water discharged from one first discharge member 71 and the pure water discharged from the other first discharge member 71 collide with each other at the center of the second region 12b, and the first discharge member 71 The flow along the discharge direction from the member 71 is canceled. In this way, the local flow of pure water along a specific direction in the second region 12b is canceled out by the wall surface of the treatment tank 12 and the rectifying plate 28, and the pressure in the second region 12b is substantially uniform. To rise.
  • substantially the same amount of pure water passes through each of the numerous through holes 29 of the rectifying plate 28 and flows along the vertical direction from the second region 12b to the first region 12a. That is, the inflow of pure water from the second region 12b into the first region 12a is performed substantially uniformly over substantially the entire region on the rectifying plate 28.
  • an upward flow is formed in the first region 12a of the processing tank 12, and the ammonia water (chemical solution) in the processing tank 12 is replaced with pure water from the lower side of the processing tank 12. Go.
  • the ammonia water previously stored in the treatment tank 12 is substantially the same as the amount of pure water flowing into the treatment tank 12.
  • the amount is discharged from the upper opening 12c of the treatment tank 12 to the outer tank 15. That is, according to this embodiment, the chemical solution (ammonia water) in the treatment tank 12 can be efficiently replaced with pure water.
  • the pure water flowing from the second region 12b into the first region 12a is used in the first region 12a.
  • the liquid flow is directed upward. Therefore, the floating substance floating in the processing tank 12 can be lifted upward in the processing tank 12, and further flowed out to the outer tank 15. As a result, the suspended matter (particle) force S can be prevented from adhering to the wafer W.
  • an upward flow of ammonia water is always formed in the first region 12a of the processing tank 12 from the start to the end of etching of the wafer W with the ammonia water. Therefore, it is possible to ensure the uniformity of the etching amount with respect to the wafer W along the direction corresponding to the horizontal direction (horizontal direction) in the state of being arranged in the first region 12a.
  • the processing liquid (pure water) in the processing tank 12 is gradually replaced by the chemical liquid (ammonia water) from the lower side.
  • the chemical solution (ammonia water) in the processing tank 12 is gradually replaced with pure water from the lower side. Therefore, as shown in FIG. 8, the concentration of the chemical solution around the upper portion of the wafer W arranged in the first region 12a of the processing tank 12 (the dashed line in FIG. 8) and the chemical solution around the lower portion The concentration (solid line in FIG.
  • the third mentioned above The supply flow rate per unit time of the chemical solution into the second region 12b of the treatment tank 12 in the process of step 5, and the supply flow rate per unit time of pure water into the second region 12b of the treatment tank 12 in the step 5 Between the portion disposed above and the portion disposed below when the wafer W is disposed in the processing tank 12 of the plate surface of the wafer W. In particular, the time during which the chemical treatment is performed can be made substantially the same (see Fig. 8). Therefore, it is possible to ensure the uniformity of the processing on the plate surface of the wafer W along the direction corresponding to the vertical direction when the wafer W is placed in the processing bath 12.
  • a uniform upward flow of the chemical solution is formed around the plate surface of the processing target wafer W. . That is, the flow of ammonia water on the plate surface of the wafer W to be processed, for example, the flow velocity is substantially uniform over the plate surface. Therefore, although the silicon wafer W to be processed has a sharp reactivity with respect to the ammonia water, the etching amount can be made substantially uniform over the plate surface of the wafer W to be processed.
  • the wafer W can be etched with a substantially uniform etching amount over the entire area of the plate surface.
  • pure water is supplied to the treatment tank 12 via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44.
  • the output of the discharge mechanism 65 is increased by a signal from the control signal 18.
  • the second to fourth on-off valves 52, 53, 54 of the switching mechanism 50 are opened.
  • the water is supplied to the treatment tank 12 at a predetermined flow rate (for example, 801 / min or more) through the pure hydraulic lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. Will come to be.
  • the first to third upper supply pipes 42, 43, 44 are connected to the pair of second to fourth discharge members 72, 73, 74, respectively.
  • the pure water fed from the first to third upper supply pipes 42, 43, 44 is directly discharged into the first region 12a of the treatment tank 12 through the second to fourth discharge members 72, 73, 74.
  • each pair of ejection members 72, 73, 74 is symmetrically disposed on the pair of wall surfaces of the opposing treatment tank 12 so as to face each other.
  • each of the discharge ports 72a, 73a, 74a of the second to fourth discharge members 72, 73, 74 can discharge pure water between adjacent wafers W held by the holding member 20. Are arranged.
  • the pure water discharged from one discharge member of each pair of discharge members 72, 73, 74 facing each other and the pure water discharged from the other discharge member are the wafer W and the wafer. Collide in the gap with W.
  • the second to fourth discharge members 72, 73, and 74 are arranged at different vertical positions. Therefore, in the first region 12a of the processing tank 12 (at least around the plate surface of the wafer W to be processed), the liquid (pure water) stored in the processing tank 12 is vigorously stirred. .
  • the supply amount of the liquid treatment liquid into the treatment tank 12 per unit time is increased.
  • the ion-level chemical liquid that has not been completely removed in the fifth step and stayed around the wafer W can be surely washed away.
  • the deposits (particles) that adhere to the wafer W without being completely removed in the fifth step can be removed from the wafer W.
  • the treatment liquid pure water
  • the wafer W can be stably supported by the holding member 20.
  • pure water is also supplied from the lower supply pipe 41 into the second region 12b of the treatment tank 12.
  • the pure water supplied to the second region 12b passes through the rectifying plate 28 and flows into the first region 12a as a substantially uniform upward flow (translational flow) over the entire surface of the rectifying plate 28. .
  • the pure water flowing from the second region 12b into the first region 12a causes the liquid flow in the first region 12a to be directed upward as a whole.
  • the chemical solution remaining around the wafer W and the deposits removed from the wafer W can be lifted upward in the processing tank 12 and further flowed out to the outer tank 15.
  • the rinsing process of the wafer W can be performed more reliably, and the removed deposit can be prevented from adhering to the wafer W again.
  • Such a sixth step is performed, for example, for several minutes.
  • the holding member 20 is raised and the wafer W is discharged from the processing tank 12.
  • a series of processes for the wafer W to be processed is completed.
  • a processing tank that contains the wafer W to be processed and stores the processing liquid (pure water) so that an upward flow is formed in the first region 12a.
  • the chemical solution (ammonia water) is supplied to the second region 12b in 12.
  • pure water is supplied to the second area 12b of the treatment tank 12 so that an upward flow is formed in the first area 12a.
  • a substantially uniform upward flow is formed at least around the wafer W to be processed. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the processing target wafer W along the direction corresponding to the horizontal direction when the processing target wafer W is arranged in the processing tank 12.
  • the processing liquid in the processing tank 12 is gradually replaced by the chemical liquid from the lower side.
  • the chemical solution in the processing tank 12 is gradually replaced by water from below. Therefore, in the plate surface of the wafer W to be processed, the treatment with the chemical solution is substantially performed between the portion disposed above and the portion disposed below when the wafer W to be processed is disposed in the processing tank 12.
  • the timing at which the treatment is started and the timing at which the treatment with the chemical solution is substantially ended are different, the time during which the treatment with the chemical solution is substantially performed can be made substantially the same. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the processing target wafer W along the direction corresponding to the vertical direction when the processing target wafer W is arranged in the processing tank 12.
  • an upward flow of the chemical solution is formed at least around the wafer W to be processed disposed in the first region 12a of the processing bath 12. Therefore, the flow of the chemical solution on the plate surface of the wafer W to be processed, for example, the flow velocity, which is only required to keep the concentration of the chemical solution constant, is substantially uniform over the plate surface. For this reason, it is possible to ensure the uniformity of processing on the plate surface of the wafer W to be processed without depending on the type of the chemical used.
  • the wafer W to be processed is processed while ensuring the uniformity of the degree of processing within the plate surface. I can do it.
  • the supply of pure water from the lower supply pipe 41 may be stopped. Further, pure water may be supplied from one or two of the first to third upper supply pipes 41, 42, 43. If the processing liquid is discharged at least around the wafer W accommodated in the first region 12a and the stored liquid is stirred around the wafer W, the rinsing process for the wafer W is more reliably performed. Can do. In addition, the force S removes deposits from the wafer W with high removal efficiency.
  • the wafer W to be processed can be processed substantially uniformly within the plate surface regardless of the type of chemical.
  • the substrate processing apparatus 10 includes the ultrasonic generator 30
  • the present invention is not limited to this, and the ultrasonic generator 30 is optional.
  • each step in the substrate processing method described above for example, the third step (replacement of the processing solution with the chemical solution), the fourth step (immersion of the wafer W in the chemical solution), and the fifth step ( In replacement of the chemical solution with pure water, ultrasonic waves may be generated from the ultrasonic generator 30 to the treatment liquid in the treatment tank 12. According to such a method, particles can be removed from the wafer W to be processed with high removal efficiency.
  • the straightening member 28 has a large number of through holes 29.
  • straightening member can be applied.
  • an auxiliary rectifying plate is provided in the second region 12b of the processing tank 12 in order to form a uniform upward flow around the wafer W to be processed arranged in the first region 12a of the processing tank 12. May be.
  • the liquid supply port into the second region 12b via the lower supply pipe 41 in the embodiment described above, the discharge port 71a of the first discharge member 71 faces the plate.
  • the auxiliary rectifying plate By providing the auxiliary rectifying plate, the local flow along the supply direction of the liquid supplied via the lower supply pipe 41 can be canceled.
  • the processing liquid flows from the lower supply pipe 41 into the second region 12b of the processing tank 12 through the first discharge member 71
  • the present invention is not limited thereto, and the first discharge member 71 is omitted. You can also.
  • the processing liquid is supplied into the first region 12a of the processing tank 12 from three different positions along the vertical direction, but the present invention is not limited thereto.
  • the processing liquid may be supplied into the first region 12a only from one or two positions along the vertical direction.
  • the processing liquid may be supplied into the first region 12a from four or more positions along the vertical direction.
  • the force S indicating an example in which the substrate processing apparatus and the substrate processing method are applied to the etching process and the rinsing process for the wafer W, is not limited to this. It can be applied to etching and rinsing on substrates, and can be applied to various processes other than etching and rinsing.
  • the substrate processing apparatus 10 already described in the first embodiment is used, and two types of chemical solutions having different reactivity with the substrate to be processed (the first chemical solution and the first chemical solution) are used. Two types of processing using the second chemical solution are performed on the wafer as the substrate to be processed.
  • the process using the first chemical solution having higher reactivity with the wafer of the two types of processes is the same as that already described as the first embodiment with reference to FIGS. This is substantially the same as the method of processing a wafer with your water. Therefore, in the following description, the overlapping description of the same parts as those of the first embodiment described above in the second embodiment is omitted.
  • FIG. 9 to FIG. 12 are diagrams for explaining a second embodiment of the substrate processing apparatus, the substrate processing method, the substrate processing program, and the program recording medium.
  • FIG. 9 is a table for explaining the substrate processing method
  • FIGS. 10 to 12 are diagrams for explaining the processing contents of each step shown in FIG.
  • the liquid supply facility 40 of the substrate processing apparatus 10 stores high-concentration ammonia water (NH OH) as a chemical element.
  • first chemical element source 61 and a second chemical element source 62 that stores hydrogen fluoride water containing hydrogen fluoride (HF) at a high concentration as a chemical element.
  • the fifth opening / closing valve 55 of the switching mechanism 50 is connected to the first chemical element source 61
  • the sixth opening / closing valve 56 is connected to the second chemical element source 62.
  • the high-concentration ammonia water sent from the first chemical element source 61 is mixed into the pure water sent from the pure water supply pipe 48, and the desired treatment liquid is obtained.
  • the ability to produce ammonia water (first chemical solution) with a concentration is possible.
  • the high-concentration hydrogen fluoride water fed from the second chemical element source 62 is mixed into the pure water sent from the pure water supply pipe 48, and the treatment liquid is mixed.
  • FIG. 9 In the column of the upper supply pipe in FIG. 9, the liquid supplied from the upper supply pipes 42, 43, 44 in each step is displayed. In the lower supply pipe column of FIG. 9, the liquid supplied from the lower supply pipe 41 in each step is displayed. In addition, Figure 9 In the outer tank column, one of the liquids overflowing from the processing tank 12 to the outer tank 15 in each process is displayed.
  • “DFW” represents pure water
  • “NH” represents ammonia water
  • HF hydrogen fluoride water. Represents.
  • the first chemical solution (ammonia water) having high reactivity with the wafer W and the reactivity with the wafer W are the first.
  • Two types of processing, that is lower than the chemical solution (ammonia water)! / And the treatment using the second chemical solution (hydrogen fluoride water), are performed on the wafer W in the processing tank 12 of the substrate processing apparatus 10.
  • the wafer W is subjected to an etching process using hydrogen fluoride water (second chemical liquid) and a subsequent rinsing process, an etching process using ammonia water (first chemical liquid), and a subsequent rinsing process.
  • a process using pure water, a second etching process using hydrogen fluoride water, and a subsequent rinsing process are sequentially performed.
  • each process will be described.
  • pure water is stored in the treatment tank 12 as a treatment liquid.
  • pure water is stored in the processing tank 12 in the same manner as the first step of the substrate processing method according to the first embodiment described with reference to FIG. That is, the discharge mechanism 65 is driven by a signal from the control device 18, and pure water stored in the pure water source 64 is sent toward the switching mechanism 50 through the pure water supply pipe 48.
  • the pure water flowing through the pure water supply pipe 48 is adjusted by the adjusting device 67 in terms of the dissolved gas concentration, the amount of mixed bubbles, the temperature, and the like.
  • the fifth opening / closing valve 55 and the sixth opening / closing valve 56 of the switching mechanism 50 are closed based on a signal from the control device 18. Accordingly, the chemical elements from the first chemical element source 61 and the second chemical element source 62 are not mixed into the pure water fed from the pure water supply pipe 48. That is, pure water is supplied into the treatment tank 12 as a treatment liquid.
  • the first to fourth on-off valves 51, 52, 53, 54 of the switching mechanism 50 are all opened based on the signal from the control device 18. Accordingly, pure water is supplied into the treatment tank 12 from all of the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. For this reason, it is possible to set a large amount of pure water supplied per unit time (for example, 801 / min or more). As a result, pure water is efficiently stored in the treatment tank 12 in a short time. It is the power S to stay.
  • the wafer W is accommodated in the first region 12a of the processing bath 12. Specifically, the wafer W is accommodated in the first region 12a of the processing bath 12 in the same manner as the second step of the substrate processing method according to the first embodiment described above. That is, the lifting mechanism (not shown) lowers the holding member 20 based on the signal from the control device 18. At this time, the holding member 20 holds a predetermined number (for example, 50) of wafers W to be processed. As a result, the plurality of wafers W are accommodated in the first region 12 a of the processing tank 12 and are immersed in the pure water stored in the processing tank 12.
  • first step and the second step may be performed in the reverse order.
  • the second step may be performed in the reverse order.
  • the first step and the second step may be performed in parallel.
  • the treatment tank 12 is fluorinated via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44.
  • Hydrogen water (second chemical) is supplied.
  • the sixth opening / closing valve 56 of the switching mechanism 50 is opened.
  • the high concentration hydrogen fluoride water from the second chemical element source 62 is mixed into the pure water fed from the pure water supply pipe 48.
  • the open / closed state of the switching mechanism 50 other than the sixth open / close valve 56 and the operating state of the discharge mechanism 65 are maintained as they are from the first and second steps described above. As a result, as shown in FIG.
  • the hydrogen fluoride water (second chemical liquid) diluted to a predetermined concentration is used as the processing liquid, and the lower supply pipe 41 and the first to third upper supply pipes 42, 43 , 44 is supplied to the first region 12a and the second region 12b of the treatment tank 12 at a predetermined flow rate (for example, 801 / min or more) through all the supply pipes.
  • a predetermined flow rate for example, 801 / min or more
  • each pair of discharge members 72, 73, 74 is symmetrically disposed on the pair of wall surfaces of the opposing treatment tank 12 so as to face each other. Further, the discharge ports 72a, 73a, 74a of the second to fourth discharge members 72, 73, 74 can discharge pure water between the adjacent wafers W held by the holding member 20. Are arranged.
  • the hydrogen fluoride water discharged from one discharge member of each pair of opposing discharge members 72, 73, 74 and the hydrogen fluoride water discharged from the other discharge member are: Colliding in the gap between wafer W and wafer W.
  • the second to fourth discharge members 72, 73, and 74 are arranged at different vertical positions. For this reason, the liquid stored in the processing tank 12 is vigorously stirred in the first region 12a of the processing tank 12 (at least around the plate surface of the wafer W to be processed).
  • the hydrofluoric water supplied at least around the wafer W to be processed in the processing tank 12 is not separated from the liquid that has been stored at least around the wafer W to be processed in the processing tank 12 so far. Mix immediately.
  • the concentration of the hydrogen fluoride water rises while being kept substantially uniform around at least the wafer W to be processed in the processing tank 12. That is, the force that starts etching of the wafer W by the hydrogen fluoride water when the hydrogen fluoride water is supplied around the wafer W in the first region 12a.
  • the uniformity of the treatment using the second chemical (hydrogen fluoride water) can be ensured.
  • hydrogen fluoride water is also supplied from the lower supply pipe 41 into the second region 12b of the treatment tank 12 during this step.
  • the lower supply pipe 41 is connected to the pair of first discharge members 71.
  • the hydrogen fluoride water fed from the lower supply pipe 41 is discharged to the second region 12b of the treatment tank 12 through the first discharge member 71.
  • the pair of first discharge members 71 are symmetrically disposed on the pair of wall surfaces of the opposing treatment tank 12 so as to face each other.
  • the outlet member 71 discharges hydrogen fluoride water obliquely downward, and the hydrogen fluoride water discharged from the different discharge members 71 forms a symmetric flow in the second region 12b.
  • the hydrogen fluoride water supplied to the second region 12b passes through the rectifying plate 28 and flows into the first region 12a as a substantially uniform upward flow (translational flow) over the entire surface of the rectifying plate 28. To do. Then, the hydrogen fluoride water flowing from the second region 12b into the first region 12a causes the liquid flow in the first region 12a to be directed upward as a whole. Therefore, floating substances floating in the processing tank 12, for example, particles removed from the wafer W by the etching process, can float up in the processing tank 12 and flow out to the outer tank 15. As a result, floating substances (particles) can be prevented from adhering to the wafer W.
  • the wafer W is loaded with hydrogen fluoride water (first solution). Immerse in 2). Specifically, the open / close state of the switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from the third step described above. Accordingly, the hydrogen fluoride water is continuously supplied to the first region 12a and the second region 12b of the treatment tank 12 at a predetermined flow rate (for example, 801 / min or more). This step is carried out for several minutes, for example.
  • a predetermined flow rate for example, 801 / min or more
  • the concentration of the hydrogen fluoride water is kept constant around the wafer W to be processed arranged in the first region 12a of the processing tank 12.
  • the etching amount during this step can be made substantially uniform over the plate surface of the wafer W to be processed.
  • hydrogen fluoride water is also supplied from the lower supply pipe 41 into the second region 12b of the treatment tank 12 as in the third step. Then, as described above, the hydrogen fluoride water supplied to the second region 12b passes through the rectifying plate 28 and forms the first flow as a substantially uniform upward flow (translational flow) over the entire surface of the rectifying plate 28. Enters region 12a. As a result, the floating substance floating in the treatment tank 12 is lifted upward in the treatment tank 12, and can be further discharged to the outer tank 15. As a result, it is possible to prevent floating substances (particles) from adhering to the wafer W.
  • pure water is supplied to the treatment tank 12 via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44.
  • the hydrogen fluoride water in the treatment tank 12 is replaced with pure water.
  • the sixth open / close valve 56 of the switching mechanism 50 is closed by a signal from the control signal 18.
  • the mixing of the high-concentration hydrofluoric water from the second chemical element source 62 into the pure water fed from the pure water supply pipe 48 is stopped.
  • the open / close state of each open / close valve of the other switching mechanism 50 and the operating state of the discharge mechanism 65 are maintained as they are from the fourth step described above.
  • pure water is supplied to the treatment tank 12 through the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. ) Will be supplied.
  • the concentration of hydrogen fluoride is substantially within the vicinity of the plate surface of the wafer W in the first region 12a from when it starts to increase in the third step until it decreases in the fifth step. It is kept uniform. Therefore, during the period from the third step to the fifth step, the wafer W can be etched with a substantially uniform etching amount over the entire area of the plate surface. Further, the supply of hydrogen fluoride water (second chemical solution) to the treatment tank 12 is performed using the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. Therefore, the supply amount of hydrogen fluoride water into the treatment tank 12 can be set to be large, whereby the treatment using the hydrogen fluoride water can be performed in a short time.
  • ammonia water (first chemical solution) is supplied to the second region 12b of the treatment tank 12 via the lower supply pipe 41, and the treatment tank Pure water in 12 is replaced by ammonia water.
  • the pure water in the processing tank 12 is replaced with ammonia water. That is, ammonia water (first chemical solution) is supplied from the lower supply pipe 41 to the second region 12b, and ammonia water (first chemical solution) is supplied from the second region 12b to the first region 12a via the rectifying member 28.
  • the pure water in the treatment tank 12 is replaced with ammonia water (first chemical solution) while flowing in and forming an upward flow at least in the vicinity of the wafer W in the first region 12a.
  • ammonia water first chemical solution
  • the wafer W is immersed in ammonia water (first chemical solution) while replenishing the treatment tank 12 with ammonia water (first chemical solution). Keep it.
  • ammonia water (first chemical solution) is continuously supplied from the lower supply pipe 41 to the second region 12b, and ammonia water (first chemical solution) is supplied from the second region 12b to the first region 12a via the rectifying member 28.
  • the wafer W is immersed and processed in ammonia water (first chemical solution) while forming an upward flow at least near the wafer W in the first region 12a.
  • the same effects as those in the fourth step of the substrate processing method according to the first embodiment described with reference to FIG. 5 can be obtained. Therefore, for the details of the processing contents and the obtained effects in the seventh step, the description in the first embodiment described above is referred to, and redundant description is omitted here.
  • pure water is supplied to the second region 12b of the treatment tank 12 via the lower supply pipe 41, and the ammonia water in the treatment tank 12 is changed. It will be replaced by pure water.
  • the ammonia water in the processing tank 12 is replaced with pure water, and the wafer W is replaced. Apply rinse treatment. That is, pure water is supplied from the lower supply pipe 41 to the second region 12b, and pure water is allowed to flow from the second region 12b to the first region 12a via the rectifying member 28.
  • the ammonia water (first chemical solution) in the processing tank 12 is replaced with pure water.
  • the same effects as those in the fifth step of the substrate processing method according to the first embodiment described with reference to FIG. 6 can be obtained. Therefore, for the details of the processing contents and the obtained effects in the eighth step, refer to the description in the first embodiment described above, and redundant description is omitted here.
  • pure water is supplied to the treatment tank 12 via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. to continue.
  • pure water is supplied to the processing tank 12 and the substrate is cleaned with pure water.
  • Process pure water is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and pure water is supplied from the lower supply pipe 41 to the second region 12b, so that at least the wafer W in the first region 12a is supplied. Treat the substrate with pure water while stirring the liquid in the vicinity.
  • the same effects as those in the sixth step of the substrate processing method according to the first embodiment described with reference to FIG. 7 can be obtained. Therefore, the details of the processing contents in the ninth step and the obtained effects are referred to the description in the first embodiment described above, and a duplicate description is omitted here.
  • the seventh step) and subsequent rinse treatment (eighth step), as well as treatment with pure water (ninth step) will be carried out.
  • an etching process (10th and 11th steps) using hydrogen fluoride water and a subsequent rinsing process (12th step) are further performed.
  • the etching process using hydrogen fluoride water includes a step of replacing pure water with hydrogen fluoride water as the tenth step, and an eleventh step. And the step of immersing the wafer W as a hydrogen fluoride water treatment.
  • the rinse treatment includes a step of replacing hydrogen fluoride with pure water as a twelfth step.
  • the 10th step can be the same as the third step already described in detail with reference to FIG.
  • the eleventh step can be made the same as the fourth step already described in detail with reference to FIG.
  • the twelfth step can be made to be the same as the fifth step already described in detail with reference to FIG. Therefore, the redundant description of the tenth to twelfth steps is omitted here.
  • the type of the chemical solution is determined.
  • the method for supplying the chemical solution into the treatment tank 12 has been changed.
  • the wafer W can be processed by a method suitable for each chemical solution.
  • the first chemical solution (ammonia water) is supplied into the processing bath 12 so that an upward flow is formed at least around the wafer W to be processed in the processing bath. Therefore, while the first chemical liquid is being supplied into the processing tank 12, the wafer flowing through only the concentration of the first chemical liquid in the vicinity of the plate surface of the wafer W can be obtained by making the upward flow in the processing tank 12 uniform. The way the liquid flows in the vicinity of the plate surface of W can also be made substantially uniform over the plate surface. As a result, it is possible to greatly improve the uniformity of processing using the first chemical liquid within the plate surface of the wafer W without depending on the type of chemical liquid used.
  • the second chemical liquid (hydrogen fluoride water) is supplied into the processing tank 12 so that the liquid is stirred at least around the wafer W in the processing tank 12. Therefore, while the second chemical solution is being supplied into the processing bath 12, the concentration of the second chemical solution in the vicinity of the plate surface of the wafer W is reduced while setting a large supply amount of the second chemical solution per unit time. Keep it uniform.
  • the process using the second chemical solution can be performed in a short time while ensuring the uniformity of the process within the plate surface of the wafer W.
  • a plurality of processes on wafer W are performed in a short time.
  • the processing tank 12 that stores the wafer W to be processed and stores the processing liquid (pure water) so that an upward flow is formed in the first region 12a.
  • the first chemical solution (ammonia water) is supplied to the second region 12b.
  • an upward flow is formed in the first region 12a, so that water (pure water) is supplied to the second tank of the treatment tank 12. Supplied to region 12b.
  • a substantially uniform upward flow is formed at least around the wafer W to be processed. Therefore, the processing using the first chemical solution (ammonia water) on the plate surface of the processing target wafer W along the direction corresponding to the horizontal direction when the processing target wafer W is placed in the processing tank 12. Can ensure the uniformity of the power.
  • the processing liquid (pure water) in the processing tank 12 is gradually replaced with the first chemical liquid (ammonia water) from the lower side. Go.
  • the first chemical solution (ammonia water) in the processing tank 12 is gradually replaced by water (pure water) from below! Therefore, the first chemical solution (ammonia) between the portion disposed above and the portion disposed below when the wafer W to be processed is disposed in the processing tank 12 on the plate surface of the wafer W to be processed.
  • the timing at which the treatment with water is substantially started and the timing at which the treatment with the first chemical solution (ammonia water) is substantially completed are different, the time during which the treatment with the first chemical solution is performed is substantially different. It can be made substantially the same. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the processing target wafer W along the direction corresponding to the vertical direction when the processing target wafer W is placed in the processing tank 12.
  • the lower supply pipe 41 in the process using the hydrogen fluoride water 41 From Force S, showing an example of supplying hydrogen fluoride water to the second region 12b of the treatment tank 12 and supplying hydrogen fluoride water from the upper supply pipes 42, 43, 44 to the first region 12a of the treatment tank 12.
  • the present invention is not limited to this, and hydrogen fluoride water may be supplied only from the upper supply pipes 42, 43, 44 to the first region 12 a of the treatment tank 12.
  • Hydrogen fluoride water may be supplied from one or two of the first to third upper supply pipes 41, 42, 43.
  • a process using ammonia water (sixth and seventh processes) and a process of replacing ammonia water with pure water (eighth process) 1 shows an example in which the first chemical solution (ammonia water) or pure water is supplied into the treatment tank 12 only from the lower supply pipe 41, but is not limited thereto. While supplying the 1st chemical
  • the treatment liquid (pure water) is introduced into the treatment tank 12 from all the supply pipes 41, 42, 43, 44.
  • Force S which shows an example of water being supplied, is not limited to this.
  • the supply of pure water from the lower supply pipe 41 may be stopped.
  • pure water may be supplied from one or two of the first to third upper supply pipes 41, 42, 43. If the processing liquid is discharged at least around the wafer W accommodated in the first region 12a and the stored liquid is stirred around the wafer W, the rinsing process for the wafer W can be more reliably performed. it can. In addition, deposits can be removed from the wafer W with high removal efficiency.
  • the process using the first chemical solution is an etching process of a silicon wafer using ammonia water
  • the process using the second chemical solution is a hook.
  • the force shown in the example of the silicon wafer etching process using hydrogen fluoride water is not limited to this, and various modifications can be made.
  • a process using the first chemical solution is a process using a chemical solution that has a relatively high reactivity with the substrate to be processed, and a process using the second chemical solution is reactive with the substrate to be processed.
  • the treatment may be performed using a chemical solution lower than the first chemical solution.
  • the process using the first chemical solution must be managed with a high degree of accuracy!
  • the process, and the process using the second chemical solution is the process. Processing that does not require management of the degree of progress with high accuracy is also possible. At this time, the first chemical solution and the second chemical solution may be of the same type. Further, in the above-described embodiment, the wafer W is subjected to an etching process using hydrogen fluoride water and a subsequent rinse process, an etching process using ammonia water and a subsequent rinse process, a process using pure water, In addition, the example in which the etching process using the second hydrogen fluoride water and the subsequent rinsing process are sequentially performed has been described. However, as a matter of course, the processing performed on the wafer W is not limited to this example, and the processing using the first chemical solution and the processing using the second chemical solution are appropriately combined. And can
  • the substrate processing apparatus 10 includes the ultrasonic generator 30
  • the present invention is not limited to this, and the ultrasonic generator 30 is optional.
  • the processing liquid in the processing tank 12 is changed from the ultrasonic generator 30. Ultrasonic waves may be generated. According to such a method, it is possible to remove particles with high removal efficiency with the wafer W to be processed.
  • the force shown in the example in which the rectifying member 28 is formed of a rectifying plate having a large number of through holes 29 is not limited thereto, and various known rectifying members are applied. That power S.
  • an auxiliary current regulating plate is provided in the second region 12b of the processing tank 12. Also good.
  • a plate-shaped auxiliary member is provided so as to face the liquid supply port (in the above-described embodiment, the discharge port 71a of the first discharge member 71) into the second region 12b via the lower supply pipe 41.
  • the present invention is not limited to this, and the first discharge member 71 can be omitted.
  • the force shown in the example in which the processing liquid is supplied into the first region 12a of the processing tank 12 from three different positions along the vertical direction is limited to this. Absent.
  • the processing fluid may be supplied into the first region 12a only from one or two positions along the vertical direction. Alternatively, the processing liquid may be supplied into the first region 12a from four or more positions along the vertical direction.
  • the substrate processing apparatus and the substrate processing method are applied to an example in which different types of chemical solutions are used and a plurality of processes are continuously performed on the wafer W! /,
  • the present invention is not limited to this, and can be applied to etching processing and rinsing processing for LCD substrates and CD substrates, and further to various processing other than etching processing and rinsing processing.
  • a single chemical solution is selected from a plurality of different chemical solutions, and a process using the selected single chemical solution is performed on a substrate to be processed in a single processing tank.
  • the substrate processing apparatus 10 that is substantially the same as the apparatus already described in the first embodiment is used, and two types of chemical solutions having different reactivities with the substrate to be processed are used. Processing force by one chemical liquid selected from (first chemical liquid and second chemical liquid) It is applied to a wafer as a substrate to be processed.
  • the process using the first chemical solution having higher reactivity with the wafer out of the two types of processes is performed as the first embodiment with reference to FIGS. 1 to 8.
  • FIGS. 13 and 14 are diagrams for explaining a third embodiment of the substrate processing apparatus, the substrate processing method, the substrate processing program, and the program recording medium.
  • FIG. 13 is a table for explaining the substrate processing method when the first chemical solution is used
  • FIG. 14 is a table for explaining the substrate processing method when the second chemical solution is used. is there.
  • the liquid supply facility 40 of the substrate processing apparatus 10 stores high-concentration ammonia water (NH OH) as a chemical element.
  • first chemical element source 61 and a second chemical element source 62 that stores hydrogen fluoride water containing hydrogen fluoride (HF) at a high concentration as a chemical element.
  • the fifth opening / closing valve 55 of the switching mechanism 50 is connected to the first chemical element source 61
  • the sixth opening / closing valve 56 is connected to the second chemical element source 62.
  • the high-concentration ammonia water sent from the first chemical element source 61 is mixed into the pure water sent from the pure water supply pipe 48, and the desired treatment liquid is obtained.
  • the ability to produce ammonia water (first chemical solution) with a concentration is possible.
  • the high-concentration hydrogen fluoride water fed from the second chemical element source 62 is mixed into the pure water sent from the pure water supply pipe 48, and the treatment liquid is mixed.
  • the control device 18 of the substrate processing apparatus 10 uses ammonia for the wafer W as described in the first embodiment and the second embodiment.
  • the setting device 19c is used to set whether water (first chemical solution) or hydrogen fluoride water (second chemical solution) is used for treatment, and the wafer W is treated with ammonia water or hydrogen fluoride water.
  • It further has an input device 19d made of, for example, a touch panel or the like for an operator or the like to input information on whether to perform the processing.
  • the setting on the adjuster 19c is input This is performed on the basis of information input from the outside by an operator or the like in the device 19d.
  • the setting in the setting device 19c is not limited to information from the input device 19d.
  • the setting device 19c can be set based on information sent from a host computer or the like by remote operation! /.
  • FIG. 13 and FIG. 14 a processing method for wafer W in the third embodiment will be described mainly using FIG. 13 and FIG.
  • the liquid supplied from the upper supply pipes 42, 43, 44 in each step is displayed.
  • the liquid supplied from the lower supply pipe 41 in each step is displayed.
  • the column of the outer tank in FIGS. 13 and 14 one of the liquids overflowing from the processing tank 12 to the outer tank 15 in each step is displayed.
  • DIW represents pure water
  • ⁇ represents ammonia water
  • HF hydrogen fluoride water. Represents.
  • the first chemical solution (ammonia water) having high reactivity with the wafer W and the reactivity with the wafer W are the first.
  • Two types of processing, that is lower than the chemical solution (ammonia water)! / And the treatment using the second chemical solution (hydrogen fluoride water), are performed on the wafer W in the processing tank 12 of the substrate processing apparatus 10. Performed selectively. Hereinafter, each step will be described.
  • the! / And deviation of ammonia water (first chemical solution) and hydrogen fluoride water (second chemical solution) Set whether to use for processing the operator inputs information on whether the wafer W is to be processed with ammonia water or hydrogen fluoride water by the input device 19d of the control device 18 composed of a touch panel or the like.
  • the setting device 19c applies ammonia water and hydrogen fluoride water to the wafer W.
  • the setting for which of the processing is to be performed is performed.
  • the processing method for the wafer W more specifically, the method for supplying the chemical solution and pure water into the processing layer 12 differs depending on which chemical solution is used.
  • a processing method for processing the wafer W with ammonia water first chemical solution
  • a processing method for processing the wafer W with hydrogen fluoride water second chemical solution
  • the (third process to eighth process) is the same as the method of processing the wafer W using ammonia water in the first embodiment described above. Accordingly, only the outline will be described here, and the description of the first embodiment described above will be referred to, and redundant description will be omitted.
  • the wafer W is accommodated in the first region 12 a of the processing tank 12. Specifically, in the same manner as the first step of the substrate processing method according to the first embodiment described with reference to FIG. 3, pure water is stored in the processing tank 12, and the first embodiment The wafer W may be disposed in the processing bath 12 in the same manner as the second step of the substrate processing method according to the above. As a result, the wafers are accommodated in the first region 12a of the plurality of wafer W force treatment tanks 12 and are immersed in the pure water stored in the treatment tanks 12.
  • ammonia water (first chemical solution) is supplied to the second region 12b of the processing tank 12 through the lower supply pipe 41, and the processing tank
  • the pure water in 12 is replaced by ammonia water.
  • the pure water in the processing tank 12 is replaced with ammonia water in the same manner as the third step of the substrate processing method according to the first embodiment described with reference to FIG. That is, ammonia water (first chemical solution) is supplied from the lower supply pipe 41 to the second region 12b, and ammonia water (first chemical solution) is supplied from the second region 12b to the first region 12a via the rectifying member 28.
  • the pure water in the treatment tank 12 is replaced with ammonia water (first chemical solution) while flowing in and forming an upward flow at least in the vicinity of the wafer W in the first region 12a.
  • ammonia water first chemical solution
  • the wafer W is placed in the ammonia water (first chemical solution) while replenishing the treatment tank 12 with ammonia water (first chemical solution).
  • the fourth step of the substrate processing method according to the first embodiment described with reference to FIG. the wafer W is immersed in ammonia water (first chemical solution) and the wafer W is processed. That is, ammonia water (first chemical solution) is continuously supplied from the lower supply pipe 41 to the second region 12b, and ammonia water (first chemical solution) is supplied from the second region 12b to the first region 12a via the rectifying member 28.
  • the wafer W is immersed and processed in ammonia water (first chemical solution) while forming an upward flow at least in the vicinity of the wafer W in the first region 12a.
  • ammonia water first chemical solution
  • pure water is supplied to the second region 12b of the treatment tank 12 through the lower supply pipe 41, and the ammonia water in the treatment tank 12 is changed. It will be replaced by pure water.
  • the ammonia water in the processing tank 12 is replaced with pure water, and the wafer W Rinse the surface. That is, pure water is supplied from the lower supply pipe 41 to the second region 12b, and pure water is caused to flow from the second region 12b to the first region 12a via the rectifying member 28, so that at least the wafer W in the first region 12a flows.
  • the ammonia water (first chemical solution) in the treatment tank 12 is replaced with pure water.
  • the same operational effects as those in the fifth step of the substrate processing method according to the first embodiment described with reference to FIG. 6 can be obtained.
  • pure water is supplied to the treatment tank 12 via the lower supply pipe 41 and the first to third upper supply pipes 42, 43, 44. Is done.
  • pure water is supplied to the processing tank 12 and the substrate is cleaned with pure water.
  • Process. pure water is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and pure water is supplied from the lower supply pipe 41 to the second region 12b, so that at least the wafer W in the first region 12a is supplied. Treat the substrate with pure water while stirring the liquid in the vicinity.
  • the same effects as those in the sixth step of the substrate processing method according to the first embodiment described with reference to FIG. 7 can be obtained.
  • an upflow is formed in the first region 12a, so that the processing tank 12 that contains the processing target wafer W and stores the processing liquid (pure water).
  • the first chemical solution (ammonia water) is supplied to the second region 12b.
  • an upward flow is formed in the first region 12a so that water (pure water) is supplied to the second tank 12 of the treatment tank 12. Supplied to region 12b.
  • a substantially uniform upward flow is formed at least around the wafer W to be processed. Therefore, the processing using the first chemical solution (ammonia water) on the plate surface of the processing target wafer W along the direction corresponding to the horizontal direction when the processing target wafer W is placed in the processing tank 12 is performed.
  • the processing liquid (pure water) in the processing tank 12 is gradually replaced with the first chemical liquid (ammonia water) from the lower side. It will be done.
  • the first chemical solution (ammonia water) in the processing tank 12 is gradually replaced by water (pure water) from below.
  • the first chemical solution (between the portion disposed above and the portion disposed below when the wafer W to be processed is disposed in the processing bath 12 on the plate surface of the wafer W to be processed ( Although the timing at which the treatment with (ammonia water) is substantially started and the timing at which the treatment with the first chemical solution (ammonia water) is substantially terminated are different, the treatment with the first chemical solution is substantially performed. Time can be made substantially the same. Therefore, it is possible to ensure the uniformity of processing on the plate surface of the processing target wafer W along the direction corresponding to the vertical direction when the processing target wafer W is arranged in the processing tank 12.
  • the processing method (third process to seventh process) for processing the wafer W with hydrogen fluoride water (second chemical solution) is the same as that in the second embodiment described above. This is the same as the method of processing the wafer W using hydrogen water. Therefore, only the outline will be described here, and the overlapping description will be omitted as referring to the description in the second embodiment described above.
  • hydrogen fluoride water (second chemical solution) is supplied to the second region 12b of the treatment tank 12 through the lower supply pipe 41,
  • the pure water in the treatment tank 12 is replaced with hydrogen fluoride water.
  • the pure water in the processing tank 12 is replaced with hydrogen fluoride water. That is, hydrogen fluoride water (second chemical solution) is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and hydrogen fluoride water (second chemical solution) is supplied from the lower supply pipe 41 to the second region 12b.
  • the wafer W is loaded with hydrogen fluoride water (second solution). Immerse it in (chemical solution). Specifically, the wafer W is immersed in hydrogen fluoride water (second chemical solution) in the same manner as the fourth step of the substrate processing method according to the second embodiment described with reference to FIG. Then, the wafer W is processed. That is, hydrogen fluoride water (second chemical solution) is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and hydrogen fluoride water (second chemical solution) is supplied from the lower supply pipe 41 to the second region 12b.
  • the wafer W is immersed in hydrogen fluoride water (second chemical solution) while being stirred at least in the vicinity of the wafer W in the first region 12a.
  • hydrogen fluoride water second chemical solution
  • a seventh step pure water is supplied to the treatment tank 12, and the hydrogen fluoride water in the treatment tank 12 is replaced with pure water. Specifically, see Figure 12.
  • the hydrogen fluoride water in the processing bath 12 is replaced with pure water, and the wafer W is rinsed. That is, pure water is supplied from the upper supply pipes 42, 43, 44 to the first region 12a, and pure water is supplied from the lower supply pipe 41 to the second region 12b, so that at least the wafer W in the first region 12a is supplied.
  • the hydrogen fluoride water (second chemical solution) in the treatment tank 12 is replaced with pure water while stirring the liquid in the vicinity of.
  • the same effects as those in the fifth step of the substrate processing method according to the second embodiment described with reference to FIG. 12 can be obtained.
  • one chemical solution is selected from different types of chemical solutions, and the processing using the selected chemical solution is performed on the wafer W in the same processing tank 12.
  • the supply method of the chemical solution into the treatment tank 12 is changed according to the type of the selected chemical solution.
  • the wafer W can be processed by a method suitable for each chemical solution.
  • the first chemical solution (ammonia water) is supplied into the processing tank 12 so that an upward flow is formed at least around the wafer W to be processed in the processing tank. Therefore, while the first chemical liquid is being supplied into the processing tank 12, the wafer flowing through only the concentration of the first chemical liquid in the vicinity of the plate surface of the wafer W can be obtained by making the upward flow in the processing tank 12 uniform. The way the liquid flows in the vicinity of the plate surface of W can also be made substantially uniform over the plate surface. As a result, it is possible to greatly improve the uniformity of processing using the first chemical liquid within the plate surface of the wafer W without depending on the type of chemical liquid used.
  • the second chemical solution (hydrogen fluoride water) is supplied into the processing bath 12 so that the liquid is stirred at least around the wafer W in the processing bath 12. Therefore, while the second chemical solution is supplied into the treatment tank 12, the supply amount of the second chemical solution per unit time is reduced.
  • the force S keeps the concentration of the second chemical solution near the plate surface of the wafer W substantially uniform, while setting many.
  • the process using the second chemical solution can be performed in a short time while ensuring the uniformity of the process within the plate surface of the wafer W.
  • the first chemical solution (ammonia water) or pure water enters the treatment tank 12 only from the lower supply pipe 41.
  • the example supplied is shown, it is not restricted to this. While supplying the 1st chemical
  • the hydrogen fluoride water is supplied from all the upper supply pipes 42, 43, 44 into the first region 12a of the treatment tank 12 is shown.
  • the hydrogen fluoride water is supplied from one or two of the first to third upper supply pipes 41, 42, 43.
  • the hydrogen fluoride water is pure water.
  • the replacing step the example in which the processing liquid (pure water) is supplied into the processing tank 12 from all the supply pipes 41, 42, 43, 44 is shown, but the present invention is not limited to this.
  • the supply of pure water from the lower supply pipe 41 may be stopped.
  • pure hydraulic power S may be supplied from one or two of the first to third upper supply pipes 41, 42, 43.
  • the processing liquid is discharged around the wafer W accommodated in at least the first region 12a and the stored liquid is stirred around the wafer W, the rinsing process for the wafer W is more reliably performed. You can. In addition, deposits can be removed from the wafer W with high removal efficiency.
  • the process using the first chemical solution is an etching process of a silicon wafer using ammonia water
  • the process using the second chemical solution is fluorinated.
  • the force shown in the example of etching a silicon wafer using hydrogen water is not limited to this, and various changes can be made.
  • a process using the first chemical solution is a process using a chemical solution that has a relatively high reactivity with the substrate to be processed, and a process using the second chemical solution is reactive with the substrate to be processed.
  • the treatment may be performed using a chemical solution lower than the first chemical solution.
  • the process using the first chemical solution must be managed with a high degree of accuracy! /
  • the process, and the process using the second chemical solution is the process. This is a good process that does not require you to manage the degree of progress with high accuracy.
  • the substrate processing apparatus 10 includes the ultrasonic generator 30 .
  • the present invention is not limited to this, and the ultrasonic generator 30 is optional.
  • the processing in the processing tank 12 from the ultrasonic generator 30 is performed.
  • An ultrasonic wave may be generated in the liquid. According to such a method, it is possible to remove particles with high removal efficiency with the wafer W to be processed.
  • the force shown in the example in which the rectifying member 28 is formed of a rectifying plate having a large number of through-holes 29 is not limited thereto, and various known rectifying members are applied. That power S.
  • an auxiliary current regulating plate is provided in the second region 12b of the processing tank 12.
  • a plate-shaped auxiliary member is provided so as to face the liquid supply port (in the above-described embodiment, the discharge port 71a of the first discharge member 71) into the second region 12b via the lower supply pipe 41.
  • the present invention is not limited thereto, and the first discharge member 71 is omitted. You can also
  • the force shown in the example in which the processing liquid is supplied into the first region 12a of the processing tank 12 from three different positions along the vertical direction is not limited thereto. Absent.
  • the processing fluid may be supplied into the first region 12a only from one or two positions along the vertical direction. Alternatively, the processing liquid may be supplied into the first region 12a from four or more positions along the vertical direction.
  • the substrate processing apparatus and the substrate processing method are applied to an example in which one chemical solution is selected from different types of chemical solutions, and the processing using the selected chemical solution is performed on the wafer W.
  • the present invention is not limited to this, and can be applied to an etching process and a rinsing process for an LCD substrate and a CD substrate, and can also be applied to various processes other than an etching process and a rinsing process.

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  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2007/074222 2006-12-21 2007-12-17 基板処理装置および基板処理方法 Ceased WO2008075643A1 (ja)

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JP2006344875A JP4829094B2 (ja) 2006-12-21 2006-12-21 基板処理装置、基板処理方法、基板処理プログラム、および、プログラム記録媒体
JP2006344806A JP4842794B2 (ja) 2006-12-21 2006-12-21 基板処理装置、基板処理方法、基板処理プログラム、および、プログラム記録媒体
JP2006344911A JP5063103B2 (ja) 2006-12-21 2006-12-21 基板処理装置、基板処理方法、プログラムおよび記録媒体
JP2006-344875 2006-12-21
JP2006-344911 2006-12-21
JP2006-344806 2006-12-21

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CN111785623A (zh) * 2020-06-15 2020-10-16 上海华虹宏力半导体制造有限公司 湿法刻蚀方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH0475341A (ja) * 1990-07-18 1992-03-10 Fujitsu Ltd 半導体基板洗浄方法及び洗浄装置
JP2000183005A (ja) * 1998-12-10 2000-06-30 Sony Corp ウエハの洗浄方法及び洗浄装置
JP2001157861A (ja) * 1999-12-03 2001-06-12 Tokyo Electron Ltd 液処理装置および液処理方法
JP2001223193A (ja) * 2000-02-08 2001-08-17 Smt:Kk 基板の洗浄方法およびその装置
JP2006019350A (ja) * 2004-06-30 2006-01-19 Dainippon Screen Mfg Co Ltd 基板処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475341A (ja) * 1990-07-18 1992-03-10 Fujitsu Ltd 半導体基板洗浄方法及び洗浄装置
JP2000183005A (ja) * 1998-12-10 2000-06-30 Sony Corp ウエハの洗浄方法及び洗浄装置
JP2001157861A (ja) * 1999-12-03 2001-06-12 Tokyo Electron Ltd 液処理装置および液処理方法
JP2001223193A (ja) * 2000-02-08 2001-08-17 Smt:Kk 基板の洗浄方法およびその装置
JP2006019350A (ja) * 2004-06-30 2006-01-19 Dainippon Screen Mfg Co Ltd 基板処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111785623A (zh) * 2020-06-15 2020-10-16 上海华虹宏力半导体制造有限公司 湿法刻蚀方法

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TWI380355B (https=) 2012-12-21

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