WO2008064158A3 - Lapping carrier and method - Google Patents

Lapping carrier and method Download PDF

Info

Publication number
WO2008064158A3
WO2008064158A3 PCT/US2007/085103 US2007085103W WO2008064158A3 WO 2008064158 A3 WO2008064158 A3 WO 2008064158A3 US 2007085103 W US2007085103 W US 2007085103W WO 2008064158 A3 WO2008064158 A3 WO 2008064158A3
Authority
WO
WIPO (PCT)
Prior art keywords
major surface
base carrier
aperture
carrier
lapping
Prior art date
Application number
PCT/US2007/085103
Other languages
French (fr)
Other versions
WO2008064158A2 (en
Inventor
Timothy D Fletcher
Todd J Christianson
Vincent D Romero
Bruce A Sventek
Original Assignee
3M Innovative Properties Co
Timothy D Fletcher
Todd J Christianson
Vincent D Romero
Bruce A Sventek
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co, Timothy D Fletcher, Todd J Christianson, Vincent D Romero, Bruce A Sventek filed Critical 3M Innovative Properties Co
Priority to CN2007800432855A priority Critical patent/CN101541477B/en
Priority to JP2009538474A priority patent/JP2010510083A/en
Priority to US12/513,705 priority patent/US8137157B2/en
Priority to EP07864595A priority patent/EP2097221A4/en
Priority to KR20097010304A priority patent/KR101494912B1/en
Publication of WO2008064158A2 publication Critical patent/WO2008064158A2/en
Publication of WO2008064158A3 publication Critical patent/WO2008064158A3/en
Priority to US13/367,424 priority patent/US8795033B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Provided is a double-sided lapping carrier comprising a base carrier having a first major surface, a second major surface and at least one aperture for holding a workpiece, said aperture extending from the first major surface through the base carrier to the second major surface, wherein the base carrier comprises a first metal, the circumference of said aperture is defined by a third surface of the base carrier consisting of the first metal and, at least a portion of the first major surface or at least a portion of each of the first and the second major surfaces comprises a polymeric region, said polymeric region comprising a polymer having a work to failure of at least 10 Joules. Also provide are methods of lapping.
PCT/US2007/085103 2006-11-21 2007-11-19 Lapping carrier and method WO2008064158A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN2007800432855A CN101541477B (en) 2006-11-21 2007-11-19 Lapping carrier and method
JP2009538474A JP2010510083A (en) 2006-11-21 2007-11-19 Lapping carrier and lapping method
US12/513,705 US8137157B2 (en) 2006-11-21 2007-11-19 Lapping carrier and method
EP07864595A EP2097221A4 (en) 2006-11-21 2007-11-19 Lapping carrier and method
KR20097010304A KR101494912B1 (en) 2006-11-21 2007-11-19 Lapping Carrier and Method
US13/367,424 US8795033B2 (en) 2006-11-21 2012-02-07 Lapping carrier and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86676806P 2006-11-21 2006-11-21
US60/866,768 2006-11-21

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/513,705 A-371-Of-International US8137157B2 (en) 2006-11-21 2007-11-19 Lapping carrier and method
US13/367,424 Division US8795033B2 (en) 2006-11-21 2012-02-07 Lapping carrier and method

Publications (2)

Publication Number Publication Date
WO2008064158A2 WO2008064158A2 (en) 2008-05-29
WO2008064158A3 true WO2008064158A3 (en) 2008-07-10

Family

ID=39430535

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/085103 WO2008064158A2 (en) 2006-11-21 2007-11-19 Lapping carrier and method

Country Status (7)

Country Link
US (2) US8137157B2 (en)
EP (1) EP2097221A4 (en)
JP (1) JP2010510083A (en)
KR (1) KR101494912B1 (en)
CN (1) CN101541477B (en)
TW (1) TWI428205B (en)
WO (1) WO2008064158A2 (en)

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JP5177290B2 (en) * 2009-06-04 2013-04-03 株式会社Ｓｕｍｃｏ Fixed abrasive processing apparatus, fixed abrasive processing method, and semiconductor wafer manufacturing method
KR101209271B1 (en) * 2009-08-21 2012-12-06 주식회사 엘지실트론 Apparatus for double side polishing and Carrier for double side polishing apparatus
CN102267108A (en) * 2010-06-03 2011-12-07 中国砂轮企业股份有限公司 Abrasive tool with modified diamond abrasive material and manufacturing method thereof
DE102010032501B4 (en) 2010-07-28 2019-03-28 Siltronic Ag Method and device for dressing the working layers of a double-side sanding device
DE102010042040A1 (en) 2010-10-06 2012-04-12 Siltronic Ag Method for material removal processing of sides of semiconductor wafers in e.g. microelectronics, involves bringing side of wafer in contact with sandpaper, so that material removal from side of wafer is caused in processing step
DE102011003008B4 (en) 2011-01-21 2018-07-12 Siltronic Ag Guide cage and method for simultaneous two-sided material abrading processing of semiconductor wafers
US20130017765A1 (en) * 2011-07-11 2013-01-17 3M Innovative Properties Company Lapping carrier and method of using the same
DE102011089570A1 (en) 2011-12-22 2013-06-27 Siltronic Ag Guide cage for grinding both sides of at least one disc-shaped workpiece between two rotating working wheels of a grinding device, method for producing the guide cage and method for simultaneous two-sided grinding of disc-shaped workpieces using the guide cage
US9017139B2 (en) 2013-03-12 2015-04-28 Seagate Technology Llc Lapping carrier having hard and soft properties, and methods
CN104924196A (en) * 2014-03-20 2015-09-23 六晶金属科技（苏州）有限公司 Method for grinding metal substrate for LED chip scale packaging
WO2015157412A1 (en) * 2014-04-10 2015-10-15 Shell Oil Company A method of making a supported gas separation membrane
JP6838811B2 (en) 2014-05-02 2021-03-03 スリーエム イノベイティブ プロパティズ カンパニー Method of polishing intermittent structured polished articles and workpieces
CN104385121A (en) * 2014-09-30 2015-03-04 无锡康柏斯机械科技有限公司 Grinding bearing device for hard disk substrate grinder
JP6707831B2 (en) * 2015-10-09 2020-06-10 株式会社Sumco Grinding device and grinding method
US20170252893A1 (en) * 2016-03-03 2017-09-07 P.R. Hoffman Machine Products Inc. Polishing machine work piece holder
US10556317B2 (en) * 2016-03-03 2020-02-11 P.R. Hoffman Machine Products Inc. Polishing machine wafer holder
CN108020774B (en) * 2017-11-30 2020-03-20 上海华力微电子有限公司 Method for removing layer of small sample
US10792786B2 (en) 2018-02-12 2020-10-06 Seagate Technology Llc Lapping carrier system with optimized carrier insert
CN113496870B (en) * 2020-04-03 2022-07-26 重庆超硅半导体有限公司 Method for controlling edge morphology of silicon chip for integrated circuit
CN112435954B (en) * 2020-11-25 2024-01-26 西安奕斯伟材料科技股份有限公司 Wafer carrier processing method and wafer carrier
CN113146465B (en) * 2021-04-06 2023-03-21 安徽禾臣新材料有限公司 Adsorption pad for double-sided grinding of thin wafer and production method

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JP2002160156A (en) * 2000-11-27 2002-06-04 Fukushichi Fukuzaki Carrier for polishing
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JP2004148497A (en) * 2002-10-31 2004-05-27 Wacker Siltronic Ag Carrier and method of simultaneously machining work on both sides

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US6080042A (en) * 1997-10-31 2000-06-27 Virginia Semiconductor, Inc. Flatness and throughput of single side polishing of wafers
JP2002160156A (en) * 2000-11-27 2002-06-04 Fukushichi Fukuzaki Carrier for polishing
US20020115387A1 (en) * 2000-12-07 2002-08-22 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag Double-side polishing process with reduced scratch rate and device for carrying out the process
JP2004148497A (en) * 2002-10-31 2004-05-27 Wacker Siltronic Ag Carrier and method of simultaneously machining work on both sides

Non-Patent Citations (1)

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Title
See also references of EP2097221A4 *

Also Published As

Publication number Publication date
TWI428205B (en) 2014-03-01
EP2097221A4 (en) 2013-01-02
CN101541477B (en) 2011-03-09
JP2010510083A (en) 2010-04-02
US20120135669A1 (en) 2012-05-31
US8137157B2 (en) 2012-03-20
EP2097221A2 (en) 2009-09-09
TW200848207A (en) 2008-12-16
US8795033B2 (en) 2014-08-05
US20100048105A1 (en) 2010-02-25
CN101541477A (en) 2009-09-23
KR101494912B1 (en) 2015-02-23
WO2008064158A2 (en) 2008-05-29
KR20090082414A (en) 2009-07-30

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