CN104924196A - Method for grinding metal substrate for LED chip scale packaging - Google Patents
Method for grinding metal substrate for LED chip scale packaging Download PDFInfo
- Publication number
- CN104924196A CN104924196A CN201410105468.7A CN201410105468A CN104924196A CN 104924196 A CN104924196 A CN 104924196A CN 201410105468 A CN201410105468 A CN 201410105468A CN 104924196 A CN104924196 A CN 104924196A
- Authority
- CN
- China
- Prior art keywords
- metal substrate
- grinding
- thickness
- polishing
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The present invention relates to the technical field of grinding and discloses a method for grinding a metal substrate for LED chip scale packaging. The method herein adopts a double surface grinder to conduct grinding on the metal substrate. A clamp of the double surface grinder conducts relative planetary movement between an upper grinding wheel and a lower grinding wheel with a work piece. The method herein comprises the following steps: S1, sorting based on thickness of sheet metal; S2, selecting the double surface grinder which has a higher degree or an equal degree of accuracy, selecting a planetary gear with a thickness smaller than the thickness of the sheet metal after the sheet metal has been grinded, selecting a grinding wheel which has constituting particles equal or smaller than the particles of abrasive sands, selecting a grinding fluid which has a proportion between the abrasive sands and water of 1:1.5-6; S3, conducting grinding; S4, conducting polishing. The method herein addresses the problems of folding, large deviation of overall thickness, poor surface fineness, and the like, and can meet use of chip scale LED packaging of the sheet metal.
Description
Technical field
The present invention relates to the technical field of grinding, particularly relate to a kind of Ginding process of LED core chip size package metal substrate.
Background technology
LED(English Light Emitting Diode by name, Chinese light emitting diode by name) current conversion can be light by semiconductor layer in chip, semiconductor layer is adulterated by electronic area and N-type and void area and the doping of P type form, electric current passes through semiconductor layer, electronics is combined with hole, send light with form of photons, dump energy is with the release of heat radiation form, and temperature can reach 85 DEG C.Existing base substrate is owing to being sapphire or silicon chip composition, the heat dissipation problem of substrate is LED life-span less the biggest factor, and improve constantly along with to the requirement of brightness, can be increasing to the demand of heat radiation, because it all has with being representative with sapphire, silicon chip, substrate has identical or close thermal coefficient of expansion to the metal materials such as tungsten copper, molybdenum copper, pure molybdenum, thus this material is using as the desirable alternative materials of substrate or ideal complement material.But the problems such as point, color spot, surface scratch, integral thickness deviation are comparatively large, aberration, surface roughness are larger are such as cheated in the existence of these materials existing manufacture craft making foil, make cannot use in encapsulation process, LED grinding sapphire or the method for silicon chip, due to its equipment card, abrasive sand type create its can only abrasive hardness higher, fragility is bigger than normal, grind the material of not easily deformation properties.Because metal material has mutability, heat skewness, the low inferior problem of grinding efficiency in process of lapping, thickness as the metal material such as molybdenum copper, tungsten copper, pure molybdenum of LED core chip size package cannot be ground at the thin slice of below 0.3mm, therefore the grinding and polishing of the metal materials such as the tungsten copper of LED core chip size package, molybdenum copper, pure Mo is a brand-new field, comparatively professional method does not realize at present.
Summary of the invention
The technical problem to be solved in the present invention is because metal material has mutability, heat skewness, the low inferior problem of grinding efficiency in process of lapping, cannot grind the problem of the metal material as LED core chip size package.
In order to solve the problems of the technologies described above, the invention provides a kind of Ginding process of LED core chip size package metal substrate, comprising the following steps:
S1, to classify by metal substrate thickness;
S2, select precision higher than the twin grinder of a high grade or sane level, select thickness to be less than the planetary gear of thickness after metal substrate grinding, select composition particle to be not more than the abrasive disk of abrasive sand particle, select the lapping liquid that the abrasive sand of 1:1.5 ~ 6 and water are made into;
S3, grinding operation, twin grinder rotating speed is: 1 ~ 50r/min, and abrasive disk surface pressure is 1 ~ 300kg, and amount of grinding is to grind the number of turns for foundation, and the grinding of multi-turn number reaches required thickness;
S4, polishing operation, be replaced by polishing disk by abrasive disk, and abrasive sand is replaced by polishing sand, namely obtains the product of required surface smoothness equally through the polishing of multi-turn number.
Wherein, the material of described metal substrate is tungsten-copper alloy, molybdenum-copper or pure molybdenum.
Wherein, classified together within 5um of described metal substrate thickness difference.
Wherein, the thickness of described planetary gear is not less than 60% of the rear thickness of described metal substrate grinding.
Wherein, described abrasive sand and described polishing sand all adopt diamond, rare earth, carborundum or aluminium oxide material.
Wherein, described polishing sand granularity is 2000 ~ 6000 orders, and described abrasive sand granularity is 200 ~ 2000 orders.
Wherein, described abrasive disk and described polishing disk material are aluminium oxide, wolfram steel, cerium oxide, synthesis aluminium, cast iron, synthesis iron, synthesis copper or synthesis tin.
Technique scheme tool of the present invention has the following advantages: the Ginding process of LED core chip size package metal substrate provided by the present invention solves the grinding of metal substrate, the problem of polishing, and solve general occur in process of lapping bending, integral thickness deviation is large, the problems such as surface smoothness is poor, make metallic substrate surfaces fineness better, integral thickness is less than normal, thus can meet the use of metal substrate in chip-scale LED
Accompanying drawing explanation
Fig. 1 is the FB(flow block) of the Ginding process of embodiment of the present invention LED core chip size package metal substrate.
Detailed description of the invention
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
The Ginding process of a kind of LED core chip size package metal substrate provided by the invention, adopt twin grinder to grind metal substrate, the material of metal substrate is tungsten-copper alloy, molybdenum-copper or pure molybdenum comprise following steps:
S1, to classify by metal substrate thickness, by classified together within 5um of metal substrate thickness difference in the present embodiment, as after metal substrate grinding, thickness is 0.2mm, before grinding, thickness is 0.22mm, be divided into a class then by 0.22 ~ 0.225mm, 0.225 ~ 0.23mm is a class;
S2, select precision higher than the twin grinder of a high grade or sane level, the fixture of twin grinder moves with on the planetary gear of workpiece between upper millstone and lower millstone, upper millstone and lower millstone be High Rotation Speed under the drive of motor respectively, carry out twin grinding processing to metal substrate, driven by motor planetary gear and metal substrate produce planetary motion.Using the abrasive sand of flowing as abrasive material, solve the grinding of metal substrate, the problem of polishing, and solve general occur in process of lapping bending, integral thickness deviation is large, the problem that surface smoothness is poor, make product surface fineness normally be ground to below 0.2um, can reach 0.01um and following after polishing, integral thickness deviation can reach below 0.005mm, can below 0.002mm be reached through refine, thus the use of metal substrate on LED core chip size package can be met; Select thickness to be less than the planetary gear of the rear thickness of metal substrate grinding, preferably, select the thickness of planetary gear to be not less than 60% of the rear thickness of metal substrate grinding.Select the planetary gear that good springiness, thickness evenness are good, flatness is high, thermal deformation is little, and not easily fall slag, high abrasion in process of lapping; Select composition particle to be not more than the abrasive disk of abrasive sand particle, select the lapping liquid that the abrasive sand of 1:1.5 ~ 6 and water are made into, lapping liquid flow velocity is even, and metal substrate is always under the parcel of lapping liquid;
S3, grinding operation, twin grinder rotating speed is: 1 ~ 50r/min, and abrasive disk surface pressure is 1 ~ 300kg, and amount of grinding is to grind the number of turns for foundation, and the grinding of multi-turn number reaches required thickness;
S4, polishing operation, be replaced by polishing disk by abrasive disk, and abrasive sand is replaced by polishing sand, namely obtains the product of required surface smoothness equally through the polishing of multi-turn number.
Abrasive sand and polishing sand all adopt diamond, rare earth, carborundum or aluminium oxide material, abrasive sand is selected in conjunction with the requirement of metal substrate effects on surface roughness and grinding efficiency, and use the polishing sand of diamond material, fineness is better, use the polishing sand of silicon carbide material, polishing velocity is very fast.Polishing sand granularity is 2000 ~ 6000 orders, and abrasive sand granularity is 200 ~ 2000 orders.
The Ginding process of LED core chip size package metal substrate of the present invention, due in metal substrate manufacturing process in early stage, the factors such as integral thickness deviation is large, surface smoothness is poor, flatness, apparent state cannot be met, quality must be promoted by following process, twin grinder is adopted to grind metal substrate, the fixture of twin grinder is with relative movement on the planetary gear of workpiece between upper millstone and lower millstone, using the abrasive sand of flowing as abrasive material, realize the mode of abrasive product thickness, by classified together within 5um of metal substrate thickness difference; Select precision higher than the twin grinder of a high grade or sane level, select thickness to be less than the planetary gear of thickness after metal substrate grinding, select composition particle to be not more than the abrasive disk of abrasive sand particle, select the lapping liquid that the abrasive sand of 1:1.5 ~ 6 and water are made into; Twin grinder rotating speed is: 1 ~ 50r/min, and abrasive disk surface pressure is 1 ~ 300kg, and amount of grinding is to grind the number of turns for foundation, and the grinding of multi-turn number reaches required thickness; Abrasive disk is replaced by polishing disk, and abrasive sand is replaced by polishing sand, namely obtains the product of required surface smoothness equally through the polishing of multi-turn number.
In sum, the Ginding process of LED core chip size package metal substrate provided by the present invention solves the grinding of metal substrate, the problem of polishing, and solve general occur in process of lapping bending, integral thickness deviation is large, the problems such as surface smoothness is poor, make metallic substrate surfaces fineness better, integral thickness is less than normal, thus can meet the use of metal substrate in chip-scale LED.
Above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (7)
1. a Ginding process for LED core chip size package metal substrate, is characterized in that, comprises the following steps:
S1, to classify by metal substrate thickness;
S2, select precision higher than the twin grinder of a high grade or sane level, select thickness to be less than the planetary gear of thickness after metal substrate grinding, select composition particle to be not more than the abrasive disk of abrasive sand particle, select the lapping liquid that the abrasive sand of 1:1.5 ~ 6 and water are made into;
S3, grinding operation, twin grinder rotating speed is: 1 ~ 50r/min, and abrasive disk surface pressure is 1 ~ 300kg, and amount of grinding is to grind the number of turns for foundation, and the grinding of multi-turn number reaches required thickness;
S4, polishing operation, be replaced by polishing disk by abrasive disk, and abrasive sand is replaced by polishing sand, namely obtains the product of required surface smoothness equally through the polishing of multi-turn number.
2. the Ginding process of LED metal substrate according to claim 1, is characterized in that: the material of described metal substrate is tungsten-copper alloy, molybdenum-copper or pure molybdenum.
3. the Ginding process of LED metal substrate according to claim 1, is characterized in that: classified together within 5um of described metal substrate thickness difference.
4. the Ginding process of LED metal substrate according to claim 1, is characterized in that: the thickness of described planetary gear is not less than 60% of the rear thickness of described metal substrate grinding.
5. the Ginding process of LED metal substrate according to claim 1, is characterized in that: described abrasive sand and described polishing sand all adopt diamond, rare earth, carborundum or aluminium oxide material.
6. the Ginding process of LED metal substrate according to claim 1, is characterized in that: described polishing sand granularity is 2000 ~ 6000 orders, and described abrasive sand granularity is 200 ~ 2000 orders.
7. the Ginding process of LED metal substrate according to claim 1, is characterized in that: described abrasive disk and described polishing disk material are aluminium oxide, wolfram steel, cerium oxide, synthesis aluminium, cast iron, synthesis iron, synthesis copper or synthesis tin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105468.7A CN104924196A (en) | 2014-03-20 | 2014-03-20 | Method for grinding metal substrate for LED chip scale packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105468.7A CN104924196A (en) | 2014-03-20 | 2014-03-20 | Method for grinding metal substrate for LED chip scale packaging |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104924196A true CN104924196A (en) | 2015-09-23 |
Family
ID=54111781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410105468.7A Pending CN104924196A (en) | 2014-03-20 | 2014-03-20 | Method for grinding metal substrate for LED chip scale packaging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104924196A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106346317A (en) * | 2016-09-12 | 2017-01-25 | 天津华海清科机电科技有限公司 | Method for processing and preparing sapphire wafer |
| CN107580417A (en) * | 2017-08-30 | 2018-01-12 | 奥士康精密电路（惠州）有限公司 | Copper-based plate hole prints mechanical lapping minimizing technology |
| CN112454160A (en) * | 2020-10-27 | 2021-03-09 | 宜兴市科兴合金材料有限公司 | Double-side polished molybdenum substrate, preparation method thereof and application thereof in LED light-emitting chip |
| CN113977375A (en) * | 2021-11-30 | 2022-01-28 | 盛纬伦(深圳)通信技术有限公司 | Double-sided plane grinding method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11226862A (en) * | 1998-02-12 | 1999-08-24 | Tosoh Corp | Grinding device and grinding method |
| CN1480992A (en) * | 2002-09-06 | 2004-03-10 | 大连淡宁实业发展有限公司 | Technique for precision finishing two side of plane wafer in large size |
| CN101176983A (en) * | 2007-11-28 | 2008-05-14 | 浙江工业大学 | Semi-fixing abrasive grain polishing method of brass sheet substrate |
| CN101332584A (en) * | 2008-08-05 | 2008-12-31 | 天津市工具研究所有限公司 | Grinding method of sheet metal |
| JP2009136935A (en) * | 2007-12-04 | 2009-06-25 | Chiyoda Kk | Polishing pad |
| CN101490200A (en) * | 2006-07-12 | 2009-07-22 | 卡伯特微电子公司 | CMP method for metal-containing substrates |
| CN101541477A (en) * | 2006-11-21 | 2009-09-23 | 3M创新有限公司 | Lapping carrier and method |
| CN101829946A (en) * | 2010-05-28 | 2010-09-15 | 江苏南晶红外光学仪器有限公司 | Technology for machining two surfaces of infrared window piece |
| CN101916731A (en) * | 2010-07-12 | 2010-12-15 | 深圳大学 | Ceramic insulating film heat-conducting substrate and manufacturing method thereof |
| CN103213061A (en) * | 2012-01-18 | 2013-07-24 | 张卫兴 | Processing technic of sapphire substrate slice special for patterned substrate |
-
2014
- 2014-03-20 CN CN201410105468.7A patent/CN104924196A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11226862A (en) * | 1998-02-12 | 1999-08-24 | Tosoh Corp | Grinding device and grinding method |
| CN1480992A (en) * | 2002-09-06 | 2004-03-10 | 大连淡宁实业发展有限公司 | Technique for precision finishing two side of plane wafer in large size |
| CN101490200A (en) * | 2006-07-12 | 2009-07-22 | 卡伯特微电子公司 | CMP method for metal-containing substrates |
| CN101541477A (en) * | 2006-11-21 | 2009-09-23 | 3M创新有限公司 | Lapping carrier and method |
| CN101176983A (en) * | 2007-11-28 | 2008-05-14 | 浙江工业大学 | Semi-fixing abrasive grain polishing method of brass sheet substrate |
| JP2009136935A (en) * | 2007-12-04 | 2009-06-25 | Chiyoda Kk | Polishing pad |
| CN101332584A (en) * | 2008-08-05 | 2008-12-31 | 天津市工具研究所有限公司 | Grinding method of sheet metal |
| CN101829946A (en) * | 2010-05-28 | 2010-09-15 | 江苏南晶红外光学仪器有限公司 | Technology for machining two surfaces of infrared window piece |
| CN101916731A (en) * | 2010-07-12 | 2010-12-15 | 深圳大学 | Ceramic insulating film heat-conducting substrate and manufacturing method thereof |
| CN103213061A (en) * | 2012-01-18 | 2013-07-24 | 张卫兴 | Processing technic of sapphire substrate slice special for patterned substrate |
Non-Patent Citations (1)
| Title |
|---|
| 宾鸿赞: "《先进加工过程技术》", 30 September 2009, 华中科技大学出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106346317A (en) * | 2016-09-12 | 2017-01-25 | 天津华海清科机电科技有限公司 | Method for processing and preparing sapphire wafer |
| CN107580417A (en) * | 2017-08-30 | 2018-01-12 | 奥士康精密电路（惠州）有限公司 | Copper-based plate hole prints mechanical lapping minimizing technology |
| CN112454160A (en) * | 2020-10-27 | 2021-03-09 | 宜兴市科兴合金材料有限公司 | Double-side polished molybdenum substrate, preparation method thereof and application thereof in LED light-emitting chip |
| CN113977375A (en) * | 2021-11-30 | 2022-01-28 | 盛纬伦(深圳)通信技术有限公司 | Double-sided plane grinding method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104924196A (en) | Method for grinding metal substrate for LED chip scale packaging | |
| CN106826411B (en) | A kind of actuated by cams magnet type magneto-rheological fluid dynamic pressure burnishing device and polishing method | |
| CN103252708B (en) | Based on the ultraprecise processing method of the Sapphire Substrate of concretion abrasive polishing pad | |
| CN103299418A (en) | Diamond particle mololayer heat spreaders and associated methods | |
| JP2005028524A (en) | Superabrasive wheel and its manufacturing method | |
| US9180572B2 (en) | Chemical mechanical polishing conditioner and manufacturing methods thereof | |
| US20220288741A1 (en) | Method for grinding single-crystal diamond | |
| CN103361530B (en) | Diamond cutting blade and preparation method thereof | |
| CN104907941B (en) | A kind of silicon nitride ceramic ball slightly grinds special major diameter skive and preparation method | |
| CN109129028B (en) | High-efficiency processing method of silicon carbide wafer | |
| CN109809822B (en) | High-strength high-toughness silicon carbide ceramic carrier disc, manufacturing method and application | |
| CN105817976A (en) | Efficient ultraprecise grinding method for nanometer depth damaged layer | |
| TWI568538B (en) | Chemical mechanical polishing conditioner and manufacturing method thereof | |
| CN103381573B (en) | A kind of SiC single crystal slice lapping operation concretion abrasive cmp dish | |
| CN202952159U (en) | Chemical mechanical polishing dresser | |
| JP5456535B2 (en) | Resin bond grinding wheel | |
| CN104526579A (en) | Diamond grinding block binding agent formula | |
| CN103367242B (en) | Combined trimmer and manufacturing method thereof and chemical mechanical polishing method | |
| TW201531377A (en) | Abrasive article, conditioning disk and method for forming abrasive article | |
| US9102038B2 (en) | Beveling grindstone | |
| CN103009273B (en) | Pyramid grinding plate | |
| TWI580523B (en) | Chemical mechanical polishing conditioner with optimal abrasive exposing rate | |
| CN103240682A (en) | Abrasion-resistant composite diamond abrasive tool | |
| JP2007061961A (en) | Manufacturing method of lapping plate and mechanical lapping method | |
| CN106670897B (en) | A kind of method of surface finish suitable for diamond/copper composite material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150923 |