CN103381573B - A kind of SiC single crystal slice lapping operation concretion abrasive cmp dish - Google Patents
A kind of SiC single crystal slice lapping operation concretion abrasive cmp dish Download PDFInfo
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- CN103381573B CN103381573B CN201310200761.7A CN201310200761A CN103381573B CN 103381573 B CN103381573 B CN 103381573B CN 201310200761 A CN201310200761 A CN 201310200761A CN 103381573 B CN103381573 B CN 103381573B
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Abstract
A kind of SiC single crystal slice lapping operation concretion abrasive cmp dish.Technical scheme is characterized by, technical scheme is characterized by, a kind of SiC single crystal slice lapping operation concretion abrasive cmp dish, it includes that concretion abrasive layer, context layer, metallic base layer, concretion abrasive layer include according to weight percent content: abrasive material 45～75%；Oxidant 5～20%；Assistant research fellow's agent 5～20%；Lubricant 1～5%；Bonding agent 5～35%；Filler 1～10%.The present invention can effectively reduce the processing cost of SiC single crystal substrate, and improves the crudy of SiC single crystal substrate.
Description
Technical field:
The present invention relates to the grinding of SiC single crystal sheet, a kind of consolidation mill being applicable to SiC single crystal slice lapping operation
Material cmp dish.
Background technology:
SiC single crystal substrate is widely used in microelectronics, opto-electronic industry, such as semiconductor lighting, integrated circuit, sensor etc..
And the serviceability of SiC base device and manufacturing cost are the restriction industry development key factors such as microelectronics, photoelectron, but device
Serviceability is closely related with SiC single crystal substrate surface crudy, therefore, how high accuracy, high-quality, high efficiency with low become
This locality realizes the processing on SiC single crystal substrate ultra-smooth not damaged surface has become the frontier nature research in Ultraprecision Machining field
Problem.At present, crystal substrates conventional machining process is the most still continued to use in the processing of SiC single crystal substrate: inner circle sawing sheet, free mill
Abrasive lapping and chemically mechanical polishing (CMP).
Grinding step is the important procedure before final chemically mechanical polishing, and its quality height, cost size not only determine
The quality of finishing operations, also determines the processing cost of whole operation, and at present, free abrasive grinding efficiency is high, but after grinding
Surface smoothness is poor.On the one hand, the subsequent handling of grinding is chemically mechanical polishing, and free abrasive chemically mechanical polishing can not improve
Grind rear surface flatness, surface roughness can only be reduced, reduce surface damage；On the other hand, free abrasive grinds and is used
Diamond abrasive be disposable, be difficult to carry out recycling, abrasive material utilization rate is low, so grinding relative to concretion abrasive
Mill, its grinding is relatively costly.Concretion abrasive cmp dish is mainly by concretion abrasive layer, context layer, metallic matrix at present
Layer three part composition, and choosing for concretion abrasive layer material is SiC single crystal slice lapping operation concretion abrasive chemical machinery
Abrasive disk is of paramount importance.
Summary of the invention:
It is an object of the invention to provide a kind of SiC single crystal slice lapping operation concretion abrasive cmp dish.
The technical scheme is that, a kind of SiC single crystal slice lapping operation concretion abrasive cmp dish, its bag
Include concretion abrasive layer, context layer, metallic base layer, it is characterised in that: concretion abrasive layer includes according to weight percent content: mill
Material 45～75%；Oxidant 5～20%；Assistant research fellow's agent 5～20%；Lubricant 1～5%；Bonding agent 5～35%；Filler 1～10%.By upper
The various materials stated are placed into hot press, and after hot pressing, insulation can complete preparation.Its described abrasive material is diadust
With the mixture of silicon carbide micro-powder or be diadust and the mixture of boron carbide micro powder or for diadust and carbon
SiClx micropowder and the mixture of boron carbide micro powder.Described boron carbide micro powder, cubic boron nitride micropowder or the grain of diadust
Footpath is 3.5～50 μm.Described oxidant is sodium hydroxide, one or both or three kinds in glycerol, triethanolamine
Mixture.Described assistant research fellow's agent is brown iron oxide, one in one or more mixture in iron powder, stearic acid
Or two or more mixture.Described lubricant be the one in molybdenum bisuphide, ball shaped nano carbon dust, polytetrafluoroethylene powder or
Two or more mixture.Described bonding agent is thermoset phenolic resin, thermoset polyurethane resin, heat curing-type polyimides
One in resin.Described filler is the one in cryolite, walnut shell powder or its mixture.Described brown iron oxide and ferrum
Powder footpath 10 μm～150 μm.Described molybdenum bisuphide particle diameter is 5 μm～40 μm, and the particle diameter of ball shaped nano carbon dust is 5nm, poly-four
The mean diameter of fluorothene powder is less than 10 μm.Described cryolite mean diameter is 20 μm～70 μm, and described walnut shell powder is put down
All particle diameters are 20 μm～70 μm.
The present invention can effectively reduce the processing cost of SiC single crystal substrate, and improve SiC single crystal substrate add working medium
Amount.
Detailed description of the invention:
Embodiment 1:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 1.
Table 1 No. 1 composition of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.35 μm, grinding rate reaches 0.03 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.30 μm, and grinding rate reaches 0.05 μm/min.
Embodiment 2:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 2.
Table 2 No. 2 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.32 μm, grinding rate reaches 0.55 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.28 μm, and grinding rate reaches 0.46 μm/min.
Embodiment 3:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 3.
Table 3 No. 3 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.45 μm, grinding rate reaches 1.10 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.41 μm, and grinding rate reaches 1.25 μm/min.
Embodiment 4:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 4.
Table 4 No. 4 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.55 μm, grinding rate reaches 1.93 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.50 μm, and grinding rate reaches 2.05 μm/min.
Embodiment 5:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 5.
Table 5 No. 5 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.25 μm, grinding rate reaches 0.13 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.20 μm, and grinding rate reaches 0.11 μm/min.
Embodiment 6:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 6.
Table 6 No. 6 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.22 μm, grinding rate reaches 0.19 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.21 μm, and grinding rate reaches 0.25 μm/min.
Embodiment 7:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 7.
Table 7 No. 7 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.25 μm, grinding rate reaches 0.33 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.20 μm, and grinding rate reaches 0.35 μm/min.
Embodiment 8:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 8.
Table 8 No. 8 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.27 μm, grinding rate reaches 0.13 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.19 μm, and grinding rate reaches 0.15 μm/min.
Embodiment 9:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 9.
Table 9 No. 9 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.25 μm, grinding rate reaches 0.11 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.21 μm, and grinding rate reaches 0.15 μm/min.
Embodiment 10:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 10.
Table 10 No. 10 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.19 μm, grinding rate reaches 0.13 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.20 μm, and grinding rate reaches 0.16 μm/min.
Embodiment 11:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 11.
Table 11 No. 11 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.27 μm, grinding rate reaches 0.09 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.23 μm, and grinding rate reaches 0.11 μm/min.
Embodiment 12:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 12.
Table 12 No. 12 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.25 μm, grinding rate reaches 0.10 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.20 μm, and grinding rate reaches 0.12 μm/min.
Embodiment 13:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 13.
Table 13 No. 13 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.21 μm, grinding rate reaches 0.23 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.25 μm, and grinding rate reaches 0.25 μm/min.
Embodiment 14:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 14.
Table 14 No. 14 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.60 μm, grinding rate reaches 2.11 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.57 μm, and grinding rate reaches 2.25 μm/min.
Embodiment 15:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 15.
Table 15 No. 15 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.45 μm, grinding rate reaches 1.95 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.50 μm, and grinding rate reaches 2.20 μm/min.
Embodiment 16:
Selecting following proportioning to mix, manufacture 1, concretion abrasive cmp dish, its percetage by weight is joined and is seen
Shown in table 16.
Table 16 No. 16 compositions of concretion abrasive cmp dish
The concretion abrasive cmp dish made by said ratio, grinds the 6H-of 2 inches on ZYP300 grinder
SiC single crystal sheet (0001) C face and Si face, before grinding, surface roughness Ra is about 0.6 μm.Grinding pressure is 2psi, abrasive disk
Rotating speed is 40r/min, and workpiece rotational frequency is 40 r/min, and milling time is 30min, after grinding, and 6H-SiC single-chip (0001) C face
Surface roughness become 0.55 μm, grinding rate reaches 1.83 μm/min；The surface in 6H-SiC single-chip (0001) Si face is thick
Rugosity becomes 0.52 μm, and grinding rate reaches 1.95 μm/min.
It should be appreciated that for those of ordinary skills, can according to the above description the present invention be changed
Enter or convert, and all these modifications and variations all should belong to the protection domain of claims of the present invention.
Claims (5)
1. a SiC single crystal slice lapping operation concretion abrasive cmp dish, it include concretion abrasive layer, context layer,
Metallic base layer, it is characterised in that: concretion abrasive layer includes according to weight percent content: abrasive material 45～75%；Oxidant 5～
20%；Assistant research fellow's agent 5～20%；Lubricant 1～5%；Bonding agent 5～35%；Filler 1～10%；
Described bonding agent is the one in thermoset phenolic resin, thermoset polyurethane resin, heat curing-type polyimide resin；
Described filler is the one in cryolite, walnut shell powder or its mixture.
2. a kind of SiC single crystal slice lapping operation concretion abrasive cmp dish as claimed in claim 1, its feature exists
In: its described abrasive material is the mixture of diadust and silicon carbide micro-powder or is diadust and boron carbide micro powder
Mixture or be diadust and silicon carbide micro-powder and the mixture of boron carbide micro powder.
3. a kind of SiC single crystal slice lapping operation concretion abrasive cmp dish as claimed in claim 1, its feature exists
In: described oxidant is sodium hydroxide, the mixture of any one or more in glycerol, triethanolamine.
4. a kind of SiC single crystal slice lapping operation concretion abrasive cmp dish as claimed in claim 1, its feature exists
In: described assistant research fellow's agent is brown iron oxide, the mixture of any one or more in iron powder, stearic acid.
5. a kind of SiC single crystal slice lapping operation concretion abrasive cmp dish as claimed in claim 1, its feature exists
In: described lubricant is the mixing of any one or more in molybdenum bisuphide, ball shaped nano carbon dust, polytetrafluoroethylene powder
Thing.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103624675B (en) * | 2013-11-29 | 2016-05-11 | 河北同光晶体有限公司 | A kind of processing method of the silicon carbide substrates surface that obtains low machining damage |
| CN105171627B (en) * | 2015-09-01 | 2018-12-04 | 河南科技学院 | A kind of elastic layer and preparation method thereof of Roll-to-Roll chemical-mechanical polishing mathing concretion abrasive polishing roll |
| CN105269471B (en) * | 2015-10-22 | 2017-10-17 | 蓝思科技（长沙）有限公司 | A kind of resin abrasive tools for being used to be processed glass or ceramics |
| CN108857860A (en) * | 2018-06-12 | 2018-11-23 | 宁波江丰电子材料股份有限公司 | Grinding method, wafer orientation ring and its application of wafer orientation ring and chemical mechanical polishing apparatus |
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| CN102337082A (en) * | 2011-07-11 | 2012-02-01 | 河南科技学院 | Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof |
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| CN102977851A (en) * | 2012-12-21 | 2013-03-20 | 河南科技学院 | Grinding paste for 4H-SiC monocrystal wafer grinding process and preparation method thereof |
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| WO2001074535A1 (en) * | 2000-03-31 | 2001-10-11 | Lam Research Corporation | Fixed abrasive linear polishing belt and system using the same |
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| CN102337082A (en) * | 2011-07-11 | 2012-02-01 | 河南科技学院 | Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof |
| CN102490127A (en) * | 2011-12-20 | 2012-06-13 | 元亮科技有限公司 | Grinding material of grinding disc fixed with grinding material |
| CN102658522A (en) * | 2012-05-16 | 2012-09-12 | 南京英星光学仪器有限公司 | Spherical consolidation abrasive grinding and polishing pad for processing optical element |
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