CN104592935B - Polishing accelerator hard material - Google Patents

Polishing accelerator hard material Download PDF

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CN104592935B
CN104592935B CN 201510000557 CN201510000557A CN104592935B CN 104592935 B CN104592935 B CN 104592935B CN 201510000557 CN201510000557 CN 201510000557 CN 201510000557 A CN201510000557 A CN 201510000557A CN 104592935 B CN104592935 B CN 104592935B
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CN 201510000557
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CN104592935A (en )
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沈建新
周涛
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江苏中晶科技有限公司
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Abstract

本发明公开了一种硬质材料研磨用加速剂,该加速剂包括醇胺化合物、醇类化合物、聚丙烯酸盐、丙烯酸酯聚合物、表面活性剂、纤维素聚合物和水,pH值为7~13,其各组分的重量份为:醇胺化合物4~16份,醇类化合物4~40份,聚丙烯酸盐1~10份,丙烯酸酯聚合物10~50份,表面活性剂3~17份,纤维素聚合物1~15份和水2~27份。 The present invention discloses a hard material polishing accelerator, the accelerator comprising an alcohol amine compound, alcohols, polyacrylates, acrylate polymers, a surfactant, a cellulose polymer and water, pH = 7 ~ 13, parts by weight of each component is: an alcohol having 4 to 16 parts of an amine compound, an alcohol compound having 4 to 40 parts, 1 to 10 parts polyacrylate, 10 to 50 parts acrylate polymer, a surfactant ~ 3 17 parts, 1 to 15 parts cellulosic polymer and from 2 to 27 parts of water. 本发明对于大颗粒摩擦剂具有较好的悬浮分散作用,使所配研磨液在循环加工的过程中不易沉积到机器底部,并且能增强研磨液与蓝宝石晶片之间的化学作用,有效促进晶片表面水化,减轻晶片因纯粹物理机械作用而导致的界面损伤层,从而大大的提高了研磨去除率,使生产效率得到极大的提高。 The present invention has better dispersing action for suspending an abrasive large particles, with the polishing liquid during the machining cycle is not easily deposited onto the bottom of the machine, and can enhance the chemical reaction between the polishing solution and the sapphire wafer, the wafer surface effectively promote hydration, reduce interfacial layer wafer damage due to purely mechanical action caused, thereby greatly improving the polishing removal rate, and productivity is greatly improved.

Description

硬质材料研磨用加速剂 Polishing accelerator hard material

技术领域 FIELD

[0001] 本发明涉及硬质材料研磨领域,特别是涉及一种硬质材料研磨用加速剂。 [0001] The present invention relates to the field of grinding a hard material, particularly to a polishing accelerator hard material.

背景技术 Background technique

[0002] 当前市场上蓝宝石等硬质材料的研磨主要采用大颗粒(5~100μπι)碳化硼、碳化硅、立方氧化锆、氮化硼、氧化铝、石英砂、棕刚玉、金刚砂或钻石粉作为摩擦剂,在添加一定的分散剂,粘度调节剂配制的研磨液来进行研磨加工。 [0002] Current commercially polishing sapphire, hard material mainly large particles (5 ~ 100μπι) boron, silicon carbide, cubic zirconia, boron nitride, alumina, quartz sand, corundum, silicon carbide or diamond powder as friction agent, the addition of certain dispersants, viscosity adjusting agent, a polishing liquid prepared to be polished. 由于该方法配制的研磨液主要是依靠摩擦剂的高硬度,以及粒径的大小来控制研磨的去除率,是以物理机械作用为主,去除率较低,且材质表面易出现较深的损伤层,从而会降低成品率以及为后道抛光增加难度。 Since the primary solution is formulated to rely on the friction polishing agent of high hardness, particle size and to control the polishing removal rate is mainly mechanical action, the removal rate is low, and the material of the surface prone to damage deeper layer, which will reduce the yield and increase the difficulty of, after the polishing.

发明内容 SUMMARY

[0003] 本发明主要解决的技术问题是提供一种硬质材料研磨用加速剂,该加速剂一方面对于大颗粒摩擦剂具有较好的悬浮分散性,最主要的是能让大颗粒摩擦剂有效的粘附在研磨盘表面,不易被抛光盘的高转速所带来的离心力甩出,能使摩擦剂有效的与材料表面接触,极大的提高了机械摩擦作用,且阻止了材料表面与研磨铸铁盘直接接触所带来的划伤, 还能增强与材料的化学作用,有效促进表面水化,与摩擦剂的物理机械作用相配合,提升研磨去除率,提升加工效率,降低成本。 [0003] The present invention solves the technical problem of providing a polishing accelerator hard material, for which large particle accelerator aspect friction agent has better suspension dispersibility, the most important is to make an abrasive large particles effective adhesion surface grinding disc, can not easily be thrown polishing speed caused by high centrifugal force, to make an abrasive contact with a surface active material greatly improves the mechanical friction effect, and prevents the surface of the material and grinding cast iron disk scratch brought in direct contact with, but also enhance the chemical action of the material, effectively promote surface hydration mechanical action, cooperating with a friction agent to enhance the removal rate of polishing, improve processing efficiency and reduce costs.

[0004] 为解决上述技术问题,本发明采用的一个技术方案是:提供一种硬质材料研磨用加速剂,该加速剂包括醇胺化合物、醇类化合物、聚丙烯酸盐、丙烯酸酯聚合物、表面活性剂、纤维素聚合物和水,pH值为7~13,其各组分的重量份为:醇胺化合物4~16份,醇类化合物4~40份,聚丙烯酸盐1~10份,丙烯酸酯聚合物10~50份,表面活性剂3~17份,纤维素聚合物1~15份和水2~27份。 [0004] To solve the above problems, an aspect of the present invention is that: the hard material to provide a polishing accelerator, the accelerator comprising an alcohol amine compound, alcohols, polyacrylates, acrylate polymers, a surface active agent, a cellulosic polymer and water, pH value of 7 to 13, parts by weight of each component is: an alcohol having 4 to 16 parts of an amine compound, an alcohol compound having 4 to 40 parts, 1 to 10 parts polyacrylate acrylate polymer 10 to 50 parts, 3 to 17 parts surfactant, 2 to 27 parts of cellulose polymers and 1 to 15 parts of water.

[0005] 在本发明一个较佳实施例中,所述的醇胺化合物包括乙醇胺和三乙醇胺,乙醇胺和三乙醇胺的重量配比为1:1。 [0005] In a preferred embodiment of the present invention, the alcohol amine compound include ethanolamine and triethanolamine, and triethanolamine weight ratio of 1: 1.

[0006] 在本发明一个较佳实施例中,所述的醇类化合物包括聚乙二醇、丙二醇和聚乙烯醇,聚乙二醇、丙二醇和聚乙烯醇的重量配比为1:1:2。 [0006] In a preferred embodiment of the present invention, the alcohol compound include polyethylene glycol, propylene glycol and the weight of polyvinyl alcohol, polyethylene glycol, propylene glycol and polyvinyl alcohol ratio of 1: 1: 2.

[0007] 在本发明一个较佳实施例中,所述的表面活性剂为壬烷基酚聚氧乙烯醚。 [0007] In a preferred embodiment of the present invention, the surfactant is nonyl polyoxyethylene alkylphenol ether.

[0008] 在本发明一个较佳实施例中,所述的纤维素聚合物为羟乙基纤维素。 [0008] In a preferred embodiment of the present invention, the cellulosic polymer is hydroxyethyl cellulose.

[0009] 在本发明一个较佳实施例中,所述的聚丙烯酸盐为聚丙烯酸钠。 [0009] In a preferred embodiment of the present invention, the polyacrylate is sodium polyacrylate.

[0010] 在本发明一个较佳实施例中,所述的丙烯酸酯聚合物为丙烯酸-丙烯酸酯共聚物。 [0010] In a preferred embodiment of the present invention, the acrylate polymer of acrylic acid - acrylate copolymer.

[0011] 本发明的硬质材料研磨用加速剂能够用于蓝宝石、碳化硅晶片、氧化锆陶瓷或不锈钢硬质材料的研磨。 Polishing accelerator hard material [0011] of the present invention can be used for polishing a silicon carbide wafer of sapphire, zirconia ceramic or stainless steel hard material.

[0012] 本发明的有益效果是:本发明对于大颗粒摩擦剂具有较好的悬浮分散作用,使所配研磨液在循环加工的过程中不易沉积到机器底部,并且能让大颗粒摩擦剂有效的粘附在研磨盘表面,不易被抛光盘的高转速所带来的离心力甩出,从而使摩擦剂有效的与材料表面接触,极大的提高了机械摩擦作用,且阻止了材料表面与研磨铸铁盘直接接触所带来的划伤,并且能增强研磨液与蓝宝石等材料之间的化学作用,有效促进材料表面水化,减轻材料因纯粹物理机械作用而导致的界面损伤层,从而大大的提高了研磨去除率,使生产效率得到极大的提高。 [0012] Advantageous effects of the present invention are: the present invention has a good dispersing action for suspending an abrasive large particles, with the polishing liquid during the machining cycle is not easily deposited onto the bottom of the machine, and which allows the friction-effective large particles adheres to the disc surface grinding, polishing can not easily be thrown high rotation centrifugal force brought about, so that the friction agent effective contact with the surface of the material, which greatly improves the mechanical friction effect, and prevents the surface of the material and the grinding iron scratched disk directly brought into contact, and can enhance the chemical reaction between the polishing solution and materials such as sapphire, effectively promoting material surface hydration, reduce the interfacial layer material damage due to purely mechanical action caused thereby greatly improve the removal rate of grinding, production efficiency has been greatly improved.

具体实施方式 detailed description

[0013] 下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明的一部分实施例,而不是全部的实施例。 [0013] Hereinafter, the present invention will be apparent technical solutions in the embodiments, fully described, obviously, the described embodiments are merely part of embodiments of the present invention rather than all embodiments. 基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。 Based on the embodiments of the present invention, all other embodiments of ordinary skill in the art without any creative effort shall fall within the scope of the present invention.

[0014] 实施例1 [0014] Example 1

[0015] 硬质材料研磨用加速剂的制备:按照重量配比称取各原料,在15份水中,依次加入5份乙醇胺,5份三乙醇胺,10份聚乙二醇,10份丙二醇,15份聚乙烯醇,3份聚丙烯酸钠, 30份丙烯酸-丙烯酸酯共聚物,5份壬烷基酚聚氧乙烯醚,2份羟乙基纤维素,搅拌均匀后, 加入硝酸或者氢氧化钠溶液调节pH值为8. 5。 Preparation of [0015] the polishing accelerator hard material: Following weighing each raw material weight ratio, 15 parts of water were added 5 parts of monoethanolamine and 5 parts of triethanolamine, 10 parts of polyethylene glycol, 10 parts of propylene glycol, 15 parts of polyvinyl alcohol, 3 parts of sodium polyacrylate, 30 parts of acrylic acid - acrylic ester copolymer, 5 parts of polyoxyethylene nonyl alkylphenol ether, 2 parts of hydroxyethyl cellulose. after stirring homogeneously, adding nitric acid or sodium hydroxide solution adjusting pH to 8.5.

[0016] 制备四份研磨液,A,B,C,D: [0016] Preparation of four polishing liquid, A, B, C, D:

[0017] 在85份、75份、65份、55份水中各加入0份、10份、20份、30份加速剂,搅拌均匀后各加入15份粒径为320目(40~50 μ m)的碳化硼,搅拌均匀后加入硝酸或者氢氧化钠溶液调节pH为7. 5。 [0017] 85 parts, 75 parts, 65 parts, 55 parts of water was added to each 0 parts, 10 parts, 20 parts, 30 parts accelerator, after mixing 15 parts of each of a particle size of 320 mesh (40 ~ 50 μ m ) boron carbide, nitric acid or sodium hydroxide solution was added to adjust the pH to 7.5 after mixing.

[0018] 将所制得样品在宇晶YJ2M16B-5L双面研磨机上研磨,下压:0. 5psi,上下盘转速均为50RPM,研磨液流量:300mL/min,研磨盘为铸铁盘,研磨晶片为蓝宝石片。 [0018] The sample was prepared on-Crystal YJ2M16B-5L double side grinder, depression:. 0 5psi, both the upper and lower disk rotation speed 50 RPM, the polishing solution flow rate: 300mL / min, the abrasive disk of cast iron plate, the polishing of the wafer sapphire tablets. 研磨后蓝宝石片表面划伤检测均为肉眼,由于研磨后晶片表面粗糙度较高,轻微划伤将不可见,检测结果中显示的划伤标准均为肉眼可见的重度划伤。 After grinding the sapphire substrate surface scratches were detected visually, since the surface roughness of the wafer after grinding higher, minor scratches will not be visible in the standard display scratches are visible detection result severe scratches.

[0019] 该蓝宝石研磨抛光结果见表1。 [0019] The results in Table 1 polishing sapphire.

[0020] 表1 [0020] TABLE 1

[0021] [0021]

Figure CN104592935BD00041

[0022] 从表1数据可以看出,随着加速剂含量的增加,蓝宝石研磨去除率呈上升趋势,且表面划伤减少。 [0022] As can be seen from the data in Table 1, with increasing levels of accelerators, sapphire polishing removal rate is rising, and reduce surface scratches.

[0023] 实施例2 [0023] Example 2

[0024] 硬质材料研磨用加速剂的制备:按照重量配比称取各原料,在2份水中,依次加入8份乙醇胺,8份三乙醇胺,1份聚乙二醇,1份丙二醇,2份聚乙烯醇,10份聚丙烯酸钠,50份丙烯酸-丙烯酸酯共聚物,17份壬烷基酚聚氧乙烯醚,1份羟乙基纤维素,搅拌均匀后,加入硝酸或者氢氧化钠溶液调节pH值为8. 5。 Preparation [0024] The polishing accelerator hard material: Following weighing each raw material weight ratio, in 2 parts of water were added 8 parts of triethanolamine, 8 parts of triethanolamine, 1 part of polyethylene glycol, 1 part of propylene glycol, 2 parts of polyvinyl alcohol, 10 parts of sodium polyacrylate, 50 parts of acrylic acid - acrylate copolymer, 17 parts nonyl polyoxyethylene alkylphenol ether, 1 part of hydroxyethylcellulose, stir, addition of nitric acid or sodium hydroxide solution adjusting pH to 8.5.

[0025] 制备四份研磨液,A,B,C,D: [0025] Preparation of four polishing liquid, A, B, C, D:

[0026] 在85份、75份、65份、55份水中各加入0份、10份、20份、30份加速剂,搅拌均匀后各加入15份粒径为320目(40~50 μ m)的碳化硼,搅拌均匀后加入硝酸或者氢氧化钠溶液调节pH为7. 5。 [0026] 85 parts, 75 parts, 65 parts, 55 parts of water was added to each 0 parts, 10 parts, 20 parts, 30 parts accelerator, after mixing 15 parts of each of a particle size of 320 mesh (40 ~ 50 μ m ) boron carbide, nitric acid or sodium hydroxide solution was added to adjust the pH to 7.5 after mixing.

[0027] 将所制得样品在宇晶YJ2M16B-5L双面研磨机上研磨,下压:0. 5psi,上下盘转速均为50RPM,研磨液流量:300mL/min,研磨盘为铸铁盘,研磨晶片为蓝宝石片。 [0027] The sample was prepared on-Crystal YJ2M16B-5L double side grinder, depression:. 0 5psi, both the upper and lower disk rotation speed 50 RPM, the polishing solution flow rate: 300mL / min, the abrasive disk of cast iron plate, the polishing of the wafer sapphire tablets. 研磨后蓝宝石片表面划伤检测均为肉眼,由于研磨后晶片表面粗糙度较高,轻微划伤将不可见,检测结果中显示的划伤标准均为肉眼可见的重度划伤。 After grinding the sapphire substrate surface scratches were detected visually, since the surface roughness of the wafer after grinding higher, minor scratches will not be visible in the standard display scratches are visible detection result severe scratches.

[0028] 该蓝宝石研磨抛光结果见表2。 [0028] The results in Table 2 sapphire polishing.

[0029] 表2 [0029] TABLE 2

[0030] [0030]

Figure CN104592935BD00051

[0031] 从表2数据可以看出,随着加速剂含量的增加,蓝宝石研磨去除率呈上升趋势,且表面划伤减少,但加速增幅相对于实施例1有所降低。 [0031] As can be seen from the data in Table 2, with the increasing levels of accelerators, sapphire polishing removal rate is rising, and to reduce surface scratches, but reduced growth rate accelerated with respect to Example 1.

[0032] 实施例3 [0032] Example 3

[0033] 硬质材料研磨用加速剂的制备:按照重量配比称取各原料,在27份水中,依次加入2份乙醇胺,2份三乙醇胺,10份聚乙二醇,10份丙二醇,20份聚乙烯醇,1份聚丙烯酸钠, 10份丙烯酸-丙烯酸酯共聚物,3份壬烷基酚聚氧乙烯醚,15份羟乙基纤维素,搅拌均匀后, 加入硝酸或者氢氧化钠溶液调节pH值为8. 5。 Preparation [0033] The polishing accelerator hard material: Following weighing each raw material weight ratio, 27 parts of water were added 2 parts of triethanolamine, 2 parts of triethanolamine, 10 parts of polyethylene glycol, 10 parts of propylene glycol, 20 parts of polyvinyl alcohol, 1 part of sodium polyacrylate, 10 parts of acrylic acid - acrylate copolymers, 3 parts of polyoxyethylene nonyl alkylphenol, 15 parts of hydroxyethyl cellulose. after stirring homogeneously, adding nitric acid or sodium hydroxide solution adjusting pH to 8.5.

[0034] 制备四份研磨液,A,B,C,D: [0034] Preparation of four polishing liquid, A, B, C, D:

[0035] 在85份、75份、65份、55份水中各加入0份、10份、20份、30份加速剂,搅拌均匀后各加入15份粒径为320目(40~50 μ m)的碳化硼,搅拌均匀后加入硝酸或者氢氧化钠溶液调节pH为7. 5。 [0035] 85 parts, 75 parts, 65 parts, 55 parts of water was added to each 0 parts, 10 parts, 20 parts, 30 parts accelerator, after mixing 15 parts of each of a particle size of 320 mesh (40 ~ 50 μ m ) boron carbide, nitric acid or sodium hydroxide solution was added to adjust the pH to 7.5 after mixing.

[0036] 将所制得样品在宇晶YJ2M16B-5L双面研磨机上研磨,下压:0. 5psi,上下盘转速均为50RPM,研磨液流量:300mL/min,研磨盘为铸铁盘,研磨晶片为蓝宝石片。 [0036] The sample was prepared on-Crystal YJ2M16B-5L double side grinder, depression:. 0 5psi, both the upper and lower disk rotation speed 50 RPM, the polishing solution flow rate: 300mL / min, the abrasive disk of cast iron plate, the polishing of the wafer sapphire tablets. 研磨后蓝宝石片表面划伤检测均为肉眼,由于研磨后晶片表面粗糙度较高,轻微划伤将不可见,检测结果中显示的划伤标准均为肉眼可见的重度划伤。 After grinding the sapphire substrate surface scratches were detected visually, since the surface roughness of the wafer after grinding higher, minor scratches will not be visible in the standard display scratches are visible detection result severe scratches.

[0037] 该蓝宝石研磨抛光结果见表3。 [0037] The results in Table 3 abrasive polishing sapphire.

[0038] 表3 [0038] TABLE 3

[0039] [0039]

Figure CN104592935BD00061

[0040] 从表3数据可以看出,随着加速剂含量的增加,蓝宝石研磨去除率呈上升趋势,且表面划伤减少,加速增幅相对于实施例2进一步降低。 [0040] As can be seen from the data in Table 3, with increasing levels of accelerators, sapphire polishing removal rate is rising, and to reduce surface scratches, accelerated growth Example 2 with respect to further reduce.

[0041] 实施例4 [0041] Example 4

[0042] 硬质材料研磨用加速剂的制备:按照重量配比称取各原料,在15份水中,依次加入5份乙醇胺,5份三乙醇胺,10份聚乙二醇,10份丙二醇,15份聚乙烯醇,3份聚丙烯酸钠, 30份丙烯酸-丙烯酸酯共聚物,5份壬烷基酚聚氧乙烯醚,2份羟乙基纤维素,搅拌均匀后, 加入硝酸或者氢氧化钠溶液调节pH值为8. 5。 Preparation [0042] The polishing accelerator hard material: Following weighing each raw material weight ratio, 15 parts of water were added 5 parts of monoethanolamine and 5 parts of triethanolamine, 10 parts of polyethylene glycol, 10 parts of propylene glycol, 15 parts of polyvinyl alcohol, 3 parts of sodium polyacrylate, 30 parts of acrylic acid - acrylic ester copolymer, 5 parts of polyoxyethylene nonyl alkylphenol ether, 2 parts of hydroxyethyl cellulose. after stirring homogeneously, adding nitric acid or sodium hydroxide solution adjusting pH to 8.5.

[0043] 制备四份研磨液,A,B,C,D: [0043] Preparation of four polishing liquid, A, B, C, D:

[0044] 在85份、75份、65份、55份水中各加入0份、10份、20份、30份加速剂,搅拌均匀后各加入15份粒径为320目(40~50 μ m)的碳化硼,搅拌均匀后加入硝酸或者氢氧化钠溶液调节pH为7. 5。 [0044] 85 parts, 75 parts, 65 parts, 55 parts of water was added to each 0 parts, 10 parts, 20 parts, 30 parts accelerator, after mixing 15 parts of each of a particle size of 320 mesh (40 ~ 50 μ m ) boron carbide, nitric acid or sodium hydroxide solution was added to adjust the pH to 7.5 after mixing.

[0045] 将所制得样品在宇晶YJ2M16B-5L双面研磨机上研磨,下压:0. 5psi,上下盘转速均为50RPM,研磨液流量:300mL/min,研磨盘为铸铁盘,研磨晶片为碳化硅晶片。 [0045] The sample was prepared on-Crystal YJ2M16B-5L double side grinder, depression:. 0 5psi, both the upper and lower disk rotation speed 50 RPM, the polishing solution flow rate: 300mL / min, the abrasive disk of cast iron plate, the polishing of the wafer silicon carbide wafer. 研磨后蓝宝石片表面划伤检测均为肉眼,由于研磨后晶片表面粗糙度较高,轻微划伤将不可见,检测结果中显示的划伤标准均为肉眼可见的重度划伤。 After grinding the sapphire substrate surface scratches were detected visually, since the surface roughness of the wafer after grinding higher, minor scratches will not be visible in the standard display scratches are visible detection result severe scratches.

[0046] 该碳化硅晶片研磨抛光结果4。 [0046] The results of polishing a silicon carbide wafer 4.

[0047] 表4 [0047] TABLE 4

[0048] [0048]

Figure CN104592935BD00071

[0049] 从表4数据可以看出,随着加速剂含量的增加,碳化硅晶片研磨去除率呈上升趋势,且表面划伤减少。 [0049] As can be seen from the data in Table 4, with increasing levels of accelerators, the polishing removal rate of a silicon carbide wafer is rising, and to reduce surface scratches.

[0050] 实施例5 [0050] Example 5

[0051] 硬质材料研磨用加速剂的制备:按照重量配比称取各原料,在15份水中,依次加入5份乙醇胺,5份三乙醇胺,10份聚乙二醇,10份丙二醇,15份聚乙烯醇,3份聚丙烯酸钠, 30份丙烯酸-丙烯酸酯共聚物,5份壬烷基酚聚氧乙烯醚,2份羟乙基纤维素,搅拌均匀后, 加入硝酸或者氢氧化钠溶液调节pH值为8. 5。 Preparation [0051] The polishing accelerator hard material: Following weighing each raw material weight ratio, 15 parts of water were added 5 parts of monoethanolamine and 5 parts of triethanolamine, 10 parts of polyethylene glycol, 10 parts of propylene glycol, 15 parts of polyvinyl alcohol, 3 parts of sodium polyacrylate, 30 parts of acrylic acid - acrylic ester copolymer, 5 parts of polyoxyethylene nonyl alkylphenol ether, 2 parts of hydroxyethyl cellulose. after stirring homogeneously, adding nitric acid or sodium hydroxide solution adjusting pH to 8.5.

[0052] 制备四份研磨液,A,B,C,D: [0052] The polishing liquid prepared four parts, A, B, C, D:

[0053] 在85份、75份、65份、55份水中各加入0份、10份、20份、30份加速剂,搅拌均匀后各加入15份粒径为320目(40~50 μ m)的碳化硼,搅拌均匀后加入硝酸或者氢氧化钠溶液调节pH为7. 5。 [0053] 85 parts, 75 parts, 65 parts, 55 parts of water was added to each 0 parts, 10 parts, 20 parts, 30 parts accelerator, after mixing 15 parts of each of a particle size of 320 mesh (40 ~ 50 μ m ) boron carbide, nitric acid or sodium hydroxide solution was added to adjust the pH to 7.5 after mixing.

[0054] 将所制得样品在宇晶YJ2M16B-5L双面研磨机上研磨,下压:0. 5psi,上下盘转速均为50RPM,研磨液流量:300mL/min,研磨盘为铸铁盘,研磨晶片为氧化锆陶瓷片。 [0054] The sample was prepared on-Crystal YJ2M16B-5L double side grinder, depression:. 0 5psi, both the upper and lower disk rotation speed 50 RPM, the polishing solution flow rate: 300mL / min, the abrasive disk of cast iron plate, the polishing of the wafer zirconia ceramic sheet. 研磨后蓝宝石片表面划伤检测均为肉眼,由于研磨后晶片表面粗糙度较高,轻微划伤将不可见,检测结果中显示的划伤标准均为肉眼可见的重度划伤。 After grinding the sapphire substrate surface scratches were detected visually, since the surface roughness of the wafer after grinding higher, minor scratches will not be visible in the standard display scratches are visible detection result severe scratches.

[0055] 该氧化锆陶瓷片研磨抛光结果见表5。 [0055] The zirconia ceramic sheet polishing results in Table 5.

[0056] 表5 [0056] TABLE 5

[0057] [0057]

Figure CN104592935BD00081

[0058] 从表5数据可以看出,随着加速剂含量的增加,氧化锆陶瓷片研磨去除率呈上升趋势,且表面划伤减少。 [0058] As can be seen from the data in Table 5, with increasing levels of accelerators, zirconia ceramic pieces rise polishing removal rate and reduce surface scratches.

[0059] 实施例6 [0059] Example 6

[0060] 硬质材料研磨用加速剂的制备:按照重量配比称取各原料,在15份水中,依次加入5份乙醇胺,5份三乙醇胺,10份聚乙二醇,10份丙二醇,15份聚乙烯醇,3份聚丙烯酸钠, 30份丙烯酸-丙烯酸酯共聚物,5份壬烷基酚聚氧乙烯醚,2份羟乙基纤维素,搅拌均匀后, 加入硝酸或者氢氧化钠溶液调节pH值为8. 5。 Preparation [0060] The polishing accelerator hard material: Following weighing each raw material weight ratio, 15 parts of water were added 5 parts of monoethanolamine and 5 parts of triethanolamine, 10 parts of polyethylene glycol, 10 parts of propylene glycol, 15 parts of polyvinyl alcohol, 3 parts of sodium polyacrylate, 30 parts of acrylic acid - acrylic ester copolymer, 5 parts of polyoxyethylene nonyl alkylphenol ether, 2 parts of hydroxyethyl cellulose. after stirring homogeneously, adding nitric acid or sodium hydroxide solution adjusting pH to 8.5.

[0061] 制备四份研磨液,A,B,C,D: [0061] Preparation of four polishing liquid, A, B, C, D:

[0062] 在85份、75份、65份、55份水中各加入0份、10份、20份、30份加速剂,搅拌均匀后各加入15份粒径为320目(40~50 μ m)的碳化硼,搅拌均匀后加入硝酸或者氢氧化钠溶液调节pH为7. 5。 [0062] 85 parts, 75 parts, 65 parts, 55 parts of water was added to each 0 parts, 10 parts, 20 parts, 30 parts accelerator, after mixing 15 parts of each of a particle size of 320 mesh (40 ~ 50 μ m ) boron carbide, nitric acid or sodium hydroxide solution was added to adjust the pH to 7.5 after mixing.

[0063] 将所制得样品在宇晶YJ2M16B-5L双面研磨机上研磨,下压:0. 5psi,上下盘转速均为50RPM,研磨液流量:300mL/min,研磨盘为铸铁盘,研磨晶片为不锈钢片。 [0063] The sample was prepared on-Crystal YJ2M16B-5L double side grinder, depression:. 0 5psi, both the upper and lower disk rotation speed 50 RPM, the polishing solution flow rate: 300mL / min, the abrasive disk of cast iron plate, the polishing of the wafer stainless steel sheet. 研磨后蓝宝石片表面划伤检测均为肉眼,由于研磨后晶片表面粗糙度较高,轻微划伤将不可见,检测结果中显示的划伤标准均为肉眼可见的重度划伤。 After grinding the sapphire substrate surface scratches were detected visually, since the surface roughness of the wafer after grinding higher, minor scratches will not be visible in the standard display scratches are visible detection result severe scratches.

[0064] 该不锈钢片研磨抛光结果见表6。 [0064] The steel sheet polishing results in Table 6.

[0065] 表6 [0065] TABLE 6

[0066] [0066]

Figure CN104592935BD00091

[0067] 从表6数据可以看出,随着加速剂含量的增加,不锈钢研磨去除率呈上升趋势,且表面划伤减少。 [0067] As can be seen from the data in Table 6 with increasing levels of accelerators, the polishing removal rate of rise of stainless steel, and reduce surface scratches.

[0068] 本发明对于大颗粒摩擦剂具有较好的悬浮分散作用,使所配研磨液在循环加工的过程中不易沉积到机器底部,并且能让大颗粒摩擦剂有效的粘附在研磨盘表面,不易被抛光盘的高转速所带来的离心力甩出,从而使摩擦剂有效的与材料表面接触,极大的提高了机械摩擦作用,且阻止了材料表面与研磨铸铁盘直接接触所带来的划伤,并且能增强研磨液与材料之间的化学作用,有效促进晶片表面水化,减轻材料因纯粹物理机械作用而导致的界面损伤层,从而大大的提高了研磨去除率,使生产效率得到极大的提高。 [0068] The present invention has better dispersing action for suspending an abrasive large particles, with the polishing liquid during the machining cycle is not easily deposited onto the bottom of the machine, and which allows the friction-effective large particles adhered to the grinding surface of the disc can not easily be thrown a high polishing speed caused by the centrifugal force so that the friction agent effective contact with the surface of the material, which greatly improves the mechanical friction effect, and prevents the direct contact with the grinding surface of the material brought iron plate scratches, and can enhance chemical interaction between the material and the polishing solution, the wafer surface effectively promote hydration, reduce the interfacial layer material damage due to purely mechanical action caused, thereby greatly improving the polishing removal rate, production efficiency has been greatly improved.

[0069] 以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书内容所作的等效结构或等效流程变换,或直接或间接运用在其它相关的技术领域,均同理包括在本发明的专利保护范围内。 [0069] Other related art described above are only embodiments of the present invention, not intended to limit the scope of the present invention, the present invention is usually made by using a description equivalent structures or equivalent process, or applied directly or indirectly art shall fall within the scope of protection of the present invention.

Claims (7)

  1. 1. 一种硬质材料研磨用加速剂,其特征在于,该加速剂包括醇胺化合物、醇类化合物、 聚丙烯酸盐、丙烯酸酯聚合物、表面活性剂、纤维素聚合物和水,pH值为7~13,其各组分的重量份为:醇胺化合物4~16份,醇类化合物4~40份,聚丙烯酸盐1~10份,丙烯酸酯聚合物10~50份,表面活性剂3~17份,纤维素聚合物1~15份和水2~27份,其中,所述的纤维素聚合物为羟乙基纤维素,所述的醇胺化合物包括乙醇胺和三乙醇胺,所述的醇类化合物包括聚乙二醇、丙二醇和聚乙烯醇。 A hard material polishing accelerator, wherein the accelerator comprises an alcohol amine compound, alcohols, polyacrylates, acrylate polymers, a surfactant, a cellulose polymer and water, pH value 7 to 13, parts by weight of each component is: an alcohol having 4 to 16 parts of an amine compound, an alcohol compound having 4 to 40 parts, 1 to 10 parts polyacrylate, 10 to 50 parts acrylate polymer, a surfactant 3 to 17 parts, 1 to 15 parts cellulosic polymer and from 2 to 27 parts of water, wherein the cellulosic polymer is hydroxyethyl cellulose, said alcohol amine compound include ethanolamine and triethanolamine, the alcohols include polyethylene glycol, propylene glycol, and polyvinyl alcohol.
  2. 2. 根据权利要求1所述的硬质材料研磨用加速剂,其特征在于,所述的乙醇胺和三乙醇胺的重量配比为1:1。 The polishing a hard material as claimed in claim accelerator of claim 1, wherein said ethanolamine and triethanolamine weight ratio of 1: 1.
  3. 3. 根据权利要求1所述的硬质材料研磨用加速剂,其特征在于,所述的聚乙二醇、丙二醇和聚乙烯醇的重量配比为1:1:2。 3. The hard material according to claim polishing accelerator to claim 1, wherein the weight of the polyethylene glycol, propylene glycol, and polyvinyl alcohol ratio of 1: 1: 2.
  4. 4. 根据权利要求1所述的硬质材料研磨用加速剂,其特征在于,所述的表面活性剂为壬烷基酚聚氧乙烯醚。 According to claim hard material of the polishing accelerator 1, wherein said surfactant is a polyoxyethylene nonyl alkylphenol.
  5. 5. 根据权利要求1所述的硬质材料研磨用加速剂,其特征在于,所述的聚丙烯酸盐为聚丙烯酸钠。 The hard material of the polishing accelerator as claimed in claim 1, wherein the polyacrylate is sodium polyacrylate.
  6. 6. 根据权利要求1所述的硬质材料研磨用加速剂,其特征在于,所述的丙烯酸酯聚合物为丙烯酸-丙烯酸酯共聚物。 The hard material of the polishing accelerator as claimed in claim 1, wherein said acrylate polymer is an acrylic - acrylate copolymer.
  7. 7. 根据权利要求1所述的硬质材料研磨用加速剂,其特征在于,所述加速剂用于蓝宝石、碳化硅晶片、氧化锆陶瓷或不锈钢硬质材料的研磨。 According to claim hard material of the polishing accelerator 1, characterized in that said accelerator for polishing a silicon carbide wafer of sapphire, zirconia ceramic or stainless steel hard material.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1670116A (en) * 2004-03-19 2005-09-21 福吉米株式会社 Polishing composition and polishing method
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
CN1940003A (en) * 2005-09-27 2007-04-04 耐博检测技术(上海)有限公司 Water-based diamond polishing liquid and its production
US20080096390A1 (en) * 2006-03-23 2008-04-24 Cabot Microelectronics Corporation Halide anions for metal removal rate control
CN103254799A (en) * 2013-05-29 2013-08-21 陈玉祥 Hydrophilic diamond-suspended grinding and polishing solution and preparation method thereof
CN103450812A (en) * 2013-01-10 2013-12-18 湖南皓志新材料股份有限公司 Polishing solution for sapphire substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1670116A (en) * 2004-03-19 2005-09-21 福吉米株式会社 Polishing composition and polishing method
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
CN1940003A (en) * 2005-09-27 2007-04-04 耐博检测技术(上海)有限公司 Water-based diamond polishing liquid and its production
US20080096390A1 (en) * 2006-03-23 2008-04-24 Cabot Microelectronics Corporation Halide anions for metal removal rate control
CN103450812A (en) * 2013-01-10 2013-12-18 湖南皓志新材料股份有限公司 Polishing solution for sapphire substrate
CN103254799A (en) * 2013-05-29 2013-08-21 陈玉祥 Hydrophilic diamond-suspended grinding and polishing solution and preparation method thereof

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