Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
  • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
• • H—ELECTRICITY
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
  • H01L2224/05001—Internal layers
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  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
  • H01L2224/05001—Internal layers
  • H01L2224/0502—Disposition
  • H01L2224/05023—Disposition the whole internal layer protruding from the surface
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  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
  • H01L2224/0554—External layer
  • H01L2224/0556—Disposition
  • H01L2224/05568—Disposition the whole external layer protruding from the surface
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  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
  • H01L2224/0601—Structure
  • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
  • H01L2224/061—Disposition
  • H01L2224/06102—Disposition the bonding areas being at different heights
• • H—ELECTRICITY
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  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/10—Bump connectors; Manufacturing methods related thereto
  • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
  • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
  • H01L2224/161—Disposition
  • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
  • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1304—Transistor
  • H01L2924/1306—Field-effect transistor [FET]
  • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• • H—ELECTRICITY
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0008—Processes
  • H01L2933/0033—Processes relating to semiconductor body packages
  • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/005—Processes
  • H01L33/0093—Wafer bonding; Removal of the growth substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

• the present invention relates to an LED device and a manufacturing method thereof.
• an LED device including an LED element having a light emitting layer and a fluorescent layer containing a fluorescent material that emits light of different wavelengths when excited by light from the light emitting layer! .
• Patent Document 1 includes a light emitting layer that emits blue light, and a fluorescent layer that includes a fluorescent material that emits yellow-green light that is excited by the blue light and has a complementary color relationship with blue.
• White LED lamp power S as an LED device including an LED element is disclosed.
• the light emitted from the light-emitting layer and transmitted through the fluorescent layer as blue light is mixed with the light converted into yellow-green light by the fluorescent material in the fluorescent layer. The observer sees white light.
• one LED chip is composed of a transparent substrate and an LED component layer (including a light emitting layer) formed on one surface of the substrate.
• This LED chip force is mounted on the Si diode element substrate with the LED component layer as the Si diode element substrate (submount element) side, and the fluorescent layer serves as a tray for the Si diode element substrate. It is applied so as to cover the LED chip arranged on the substrate. Therefore, in this LED device, the fluorescent layer is exposed to the outside unless specifically covered with a protective film or the like.
• Patent Document 1 since the white chromaticity depends on the thickness of the fluorescent layer, in order to suppress the variation in white chromaticity and improve the production yield of the required chromaticity In addition, it is disclosed that it is preferable to make the film thickness of the fluorescent material uniform with high accuracy. Further, in Patent Document 1 below, as a specific manufacturing method for making the film thickness of the phosphor material uniform with high accuracy, the phosphor material is formed by silk screen printing, or the phosphor material is formed. Techniques have been disclosed in which the transparent substrate of the LED chip is polished before, or the fluorescent material is polished after the fluorescent material is formed.
• a light emitting layer that emits ultraviolet light, and the ultraviolet light A light emitting device and a display device (display) as an LED device including an LED element having a fluorescent layer containing a fluorescent substance that emits visible light when excited is disclosed.
• an LED constituent layer including a light emitting layer
• the fluorescent layer is a surface of the substrate opposite to the LED constituent layer or the LED constituent layer. It is formed on the surface opposite to the substrate. Therefore, also in this LED device, the fluorescent layer is exposed to the outside unless specifically covered with a protective film or the like.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2001-15817
• Patent Document 2 Japanese Patent Publication No. 11 510968
• the fluorescent layer is exposed to the outside unless it is specifically covered with a protective film or the like, so that the fluorescent layer is affected by the outside (for example, moisture).
• the phosphor layer deteriorates, and as a result, the durability of the LED device decreases.
• the present invention has been made in view of such circumstances, and can reduce the influence of the outside world on the fluorescent layer without covering with a special protective film or the like, which in turn can improve durability.
• An object is to provide an LED device.
• the present invention it is possible to manufacture an LED device capable of enhancing such durability, and moreover, it is possible to make the thickness of the fluorescent layer uniform with high accuracy, thereby improving the yield.
• the purpose is to provide a method of manufacturing an LED device that can increase the power S.
• an LED element including a light emitting layer on a first substrate. And a fluorescent material containing a fluorescent material that emits light of a different wavelength when excited by light from the light emitting layer on a second substrate that transmits light of a predetermined wavelength range.
• a method of manufacturing an LED device comprising: a step of bonding two substrates;
• a step of forming an LED constituent layer that includes a light emitting layer and constitutes an LED element on a first substrate, and a second substrate that transmits light in a predetermined wavelength range, Forming a fluorescent layer containing a fluorescent material that emits light of a different wavelength when excited by light from the light emitting layer; and a third substrate on the LED component layer formed on the first substrate. Bonding, removing the first substrate from the LED component layer to which the third substrate is bonded, and the LED having the third substrate bonded and the first substrate removed. Bonding the component layer to the phosphor layer formed on the second substrate, the second substrate, the phosphor layer formed on the second substrate, and the LED component layer. Dividing the joined body into parts including one or more of the LED elements, and an LED comprising: To provide a method of manufacturing location.
• the method for manufacturing an LED device of the present invention further includes a step of removing the third substrate from the LED constituent layer after the step of joining the LED constituent layer and the fluorescent layer. It is preferable.
• the step of removing the third substrate from the LED constituent layer includes the step of dividing the joined body, the step of dividing the LED constituent layer and the fluorescent layer after the step of joining the LED constituent layer and the fluorescent layer More preferably, it is before.
• the method further comprises a step of bonding the LED constituent layer or the third substrate and the circuit board later.
• “joining the LED constituent layer or the third substrate and the circuit board” means that the LED constituent layer is electrically connected to the circuit board. Means that the LED component layer and the circuit board are electrically connected via the third substrate.
• the manufacturing method of the LED device includes a step of dividing the bonded body, the method includes a step of bonding the LED constituent layer or the third substrate and the circuit board before the dividing step. Is preferred.
• the manufacturing method of the LED device includes a step of removing the third substrate, the LED component layer, the circuit substrate, and the circuit substrate are disposed after the step of removing the third substrate and before the dividing step. It is preferable to comprise the step of joining.
• the third substrate is preferably a circuit board.
• the bonded body further including the circuit board bonded to the LED constituent layer is divided.
• the circuit board as the third board is more preferably a circuit board on which a drive circuit for driving the LED element is mounted.
• the step of forming the LED constituent layer includes a step of forming at least one layer of the LED constituent layer by epitaxial growth.
• the LED device includes a plurality of the LED elements, and the LED device is a color display or a monochrome display based on a video signal or other display control signal. It is preferable that the display device perform the above.
• the LED constituent layer that includes the light emitting layer and constitutes the LED element, a substrate that transmits light in a predetermined wavelength region, and a fluorescent layer that is disposed between the LED constituent layer and the substrate.
• An LED device comprising: a fluorescent layer including a fluorescent substance that emits light of different wavelengths when excited by light from the light emitting layer.
• the number of the LED elements is two or more, and the luminescent color power to the outside of at least one of the two or more LED elements is the two or more. It is preferable that the color of the light emitted to the outside of at least one of the other LED elements is different.
• the number of the LED elements is two or more, and the LED device performs color display or monochrome display based on a video signal or other display control signal. Preferably, it constitutes a display device to perform.
• the LED device of the present invention preferably includes a circuit board on which a drive circuit for driving the LED element is mounted and electrically connected to the LED element.
• the present invention it is possible to provide an LED device that can reduce the influence of the outside world on the fluorescent layer without being covered with a special protective film or the like, and thus can improve durability.
• an LED device that can enhance such durability, and moreover, the thickness of the fluorescent layer can be made more accurate and uniform. It is possible to provide a method for manufacturing an LED device that can further increase the yield.
• FIG. 1 is a schematic cross-sectional view schematically showing an LED chip that forms a main part of an LED device according to a first embodiment of the present invention.
• FIG. 2 is a schematic cross-sectional view showing a step in the method of manufacturing the LED device according to the first embodiment of the present invention.
• FIG. 3 is a schematic sectional view showing a step that follows the step of FIG. 2.
• FIG. 4 is a schematic cross-sectional view showing a step that follows the step of FIG. 3.
• FIG. 5 is a schematic block diagram showing an LED device according to a second embodiment of the present invention.
• FIG. 6 is a circuit diagram showing a unit pixel in FIG.
• FIG. 7 is a diagram showing an arrangement of LED elements of the LED device according to the second embodiment of the present invention.
• FIG. 8 is a view showing another arrangement example of LED elements.
• FIG. 9 is a view showing still another arrangement example of LED elements.
• FIG. 10 is a schematic cross-sectional view showing an LED device according to a second embodiment of the present invention.
• FIG. 11 is a schematic enlarged cross-sectional view showing an enlarged chip of the LED device of FIG.
• FIG. 12 is a schematic plan view schematically showing one unit pixel portion of the LED substrate of the chip shown in FIGS. 10 and 11.
• FIG. 13 A unit pixel portion of the drive circuit board of the chip shown in FIGS. 10 and 11 is schematically illustrated. It is a schematic plan view shown schematically.
• FIG. 14 is a schematic sectional view showing a modification of the LED device according to the second embodiment of the present invention.
• FIG. 15 is a schematic cross-sectional view showing one step in the method of manufacturing the LED device according to the second embodiment of the present invention.
• FIG. 16 is a schematic sectional view showing a step that follows the step of FIG. 15.
• FIG. 17 is a schematic sectional view showing a step that follows the step of FIG. 16.
• FIG. 18 is a schematic perspective view schematically showing one step of a method for manufacturing an LED device according to a second embodiment of the present invention.
• FIG. 19 is a schematic sectional view showing a step that follows the step of FIG. 17.
• FIG. 20 is a schematic cross-sectional view showing a process of a modification of the method for manufacturing an LED device in the second embodiment of the present invention.
• FIG. 21 is a schematic sectional view showing a step that follows the step of FIG. 20.
• FIG. 1 is a schematic cross-sectional view schematically showing an LED chip 1 that forms a main part of the LED device according to the first embodiment of the present invention.
• the LED device according to the present embodiment is configured as a so-called bullet-type LED lamp or chip-type LED using the LED chip 1 shown in Fig. 1 as the LED chip.
• the structure of bullet-type LED lamps and chip-type LEDs excludes the structure of LED chip 1. Therefore, a well-known structure can be adopted, and the description thereof is omitted here.
• the LED chip 1 is a substrate (second substrate) such as a glass substrate that transmits light in a predetermined wavelength region (visible region in the present embodiment). 2) and an LED element 3 provided on the substrate 2 and emitting white light to the outside through the substrate 2.
• This LED chip 1 has only one LED element.
• the LED element 3 includes a fluorescent layer 4, an n-type impurity layer 5, an active layer 6 as a light-emitting layer, a p-type impurity layer 7, and an electrode 8 stacked in this order from the substrate 2 side on the upper surface side of the substrate 2. , 9 and.
• the n-type impurity layer 5, the active layer 6 and the p-type impurity layer 7 are each composed of an epitaxial growth layer. A part of the n-type impurity layer 5 is not covered with the active layer 6 and the p-type impurity layer 7, and one electrode 8 is formed in that region.
• the other electrode 9 is formed on the p-type impurity layer 7.
• the materials of the layers 5 to 7 are set so that blue light is emitted from the active layer 6.
• each layer 5-7 is composed of a plurality of layers or a buffer layer is added as necessary.
• the fluorescent layer 4 is a fluorescent material that emits yellow-green light that is excited by the blue light from the active layer 6 and has a complementary color with blue (for example, YAG (yttrium aluminum gallium compound)).
• YAG yttrium aluminum gallium compound
• -Containing resin for example, epoxy resin or silicone resin.
• the n-type impurity layer 5, the active layer 6, the p-type impurity layer 7, and the electrodes 8 and 9 constitute the LED element 3 as a whole. 10 (excluding the fluorescent layer 4).
• the fluorescent layer 4 is disposed between the LED constituent layer 10 and the substrate 2.
• the fluorescent layer 4 is not exposed to the outside even if it is not covered with a special protective film or the like. Therefore, according to the present embodiment, the influence of the outside world on the fluorescent layer 4 can be reduced without covering with a special protective film or the like, and the durability can be improved.
• FIG. 2, 3 and 4 are schematic cross-sectional views schematically showing the respective steps of the LED device manufacturing method according to the present embodiment.
• a base substrate (first substrate) 11 which serves as a basis for epitaxial growth of the n-type impurity layer 5 and the like of the LED component layer 10.
• the substrate 11 for example, a sapphire substrate or a SiC substrate is used.
• a plurality of LED constituent layers 10 including a light emitting layer (active layer) and constituting an LED element are formed on the first substrate 11. That is, the LED constituent layer 10 is formed on the substrate 11 for the plurality of LED chips 1 to be manufactured at once.
• an n-type impurity layer 5, an active layer 6, and a p-type impurity layer 7 are sequentially formed on the substrate 11 by epitaxial growth, and unnecessary regions of the active layer 6 and the p-type impurity layer 7 are etched. Remove. At this time, the n-type impurity layer 5 remains formed on the entire surface of the substrate 11. Then, the electrodes 8 and 9 are formed of gold or the like and patterned into a predetermined shape by etching. Figure 2 (a) shows this state.
• a substrate (third substrate) 12 for holding the LED component layer 10 and protecting the mechanical damage force is bonded to the surface of the LED component layer 10 opposite to the substrate 11. This bonding is temporary and will be peeled off later.
• the substrate 12 is bonded to the LED constituent layer 10 by the thermoplastic wax 13.
• Figure 2 (b) shows this state.
• the substrate 11 is removed from the LED constituent layer 10 to which the substrate 12 is bonded.
• Figure 2 (c) shows this situation.
• the substrate 11 can be removed by, for example, scraping the substrate 11 with a grinder, or cutting the vicinity of the boundary between the LED component layer 10 and the substrate 11 with a water jet (high pressure jet water) or a wire saw. The ability to do S.
• a substrate (second substrate) 2 such as a glass substrate that transmits light in a predetermined wavelength region (visible region in the present embodiment) is prepared, and the fluorescent layer 4 described above is provided on the substrate 2.
• Figure 3 (a) shows this state.
• the surface of the substrate 2 is uneven due to a patterned layer.
• V, Na! / Can be used as the substrate 2 through a process accompanied by high-temperature treatment such as formation of an epitaxial growth layer, the substrate 2 is not bent due to high-temperature treatment or the like. Therefore, the thickness of the fluorescent layer 4 can be made uniform with higher accuracy.
• the substrate 2 is polished and planarized and / or the fluorescent layer 4 is applied before applying the fluorescent layer 4 as necessary. Then, the phosphor layer 4 may be polished and flattened.
• the fluorescent layer 4 may be formed by, for example, sinoleta screen printing.
• FIG. 3 (b) shows this state.
• the fluorescent layer 4 is configured using an adhesive resin such as an epoxy resin or a silicone resin
• the LED constituent layer 10 and the fluorescent layer 4 are used by utilizing the adhesive property of the fluorescent layer 4. Join layer 4 together.
• the LED constituent layer 10 and the fluorescent layer 4 may be bonded using a translucent adhesive.
• thermoplastic wax 13 is removed, whereby the substrate 12 is peeled off from the LED constituent layer 10.
• Figure 4 (a) shows this state.
• FIG. 4 (a) a substrate including the LED constituent layer 10 in the state shown in FIG. 4 (a) is divided into each LED chip 1 by dicing.
• Figure 4 (b) shows this state.
• a plurality of LED chips 1 are completed at once.
• a bullet-type LED lamp or a chip-type LED as the LED device according to the present embodiment is completed through a known process such as wire bonding.
• the thickness of the fluorescent layer 4 can be made uniform with higher accuracy as described above. Therefore, it is possible to manufacture a large number of LED devices having uniform light emission colors (uniform white chromaticity in the present embodiment), and the yield can be further increased.
• the active layer 6 as a light emitting layer emits blue light and the fluorescent layer 4 excites the blue light as excitation light for all LED chips 1 manufactured in a batch. It is configured to emit yellow-green light, and all LED chips 1 emit white light. But, In each LED chip 1, fluorescent layers emitting different colors are arranged as fluorescent layers 4 (that is, areas corresponding to LED chips 1 having different emission colors in the process shown in FIG. 3 (a)). Then, fluorescent layers that emit different colors may be disposed), and a plurality of LED chips 1 that emit light of different colors may be manufactured at one time.
• the active layer 6 as a light emitting layer is configured to emit ultraviolet light
• the fluorescent layer 4 has a predetermined color using the ultraviolet light as excitation light. You may comprise so that light (for example, red light, green light, or blue light) may be emitted.
• the active layer 6 as the light emitting layer is configured to emit ultraviolet light in all the LED chips 1 manufactured in a batch, and the fluorescent layer 4 in each LED chip 1 is excited by ultraviolet light.
• fluorescent layers emitting different colors are arranged in regions corresponding to LED chips 1 having different emission colors).
• a plurality of LED chips 1 that emit light of different colors may be manufactured at a time.
• the LED chip 1 is configured such that the active layer 6 as the light emitting layer emits ultraviolet light, and the LED layer 1 is divided into three regions by dividing the fluorescent layer 4 into three regions. Three fluorescent layers that are excited by light and emit red light, green light, and blue light, respectively, may be disposed. Even in this case, white light is emitted from the LED chip 1.
• FIG. 5 is a schematic block diagram showing an LED device 21 according to the second embodiment of the present invention.
• the LED device 21 according to the present embodiment constitutes a display device that emits and displays a color image corresponding to a video signal.
• the LED device 21 according to the present embodiment can be configured as, for example, a so-called micro display with a screen of 1 inch or less.
• the LED device 21 according to the present embodiment includes a plurality of unit pixels 30 arranged two-dimensionally, and LED elements 41R, 41G, 41B of the respective colors of the unit pixels 30 (not shown in FIG. 5). 6 and 7 to be described later), and a horizontal scanning circuit 33 for selecting LED elements 41R, 41G, and 41B of each color of the unit pixel 30 for each column.
• a video signal processing circuit 34 for controlling the vertical scanning circuit 32 and the horizontal scanning circuit 33 so as to process the input video signal and display an image corresponding to the video signal.
• the number of unit pixels 30 is 3 ⁇ 3.
• the present invention is not limited to this.
• elements other than LED elements 41R, 41G, and 41B in unit pixel 30 are other than LED elements 41R, 41G, and 41B in unit pixel 30.
• the vertical scanning circuit 32, the horizontal scanning circuit 33, and the video signal processing circuit 34 constitute a drive circuit 31 that drives the LED elements 41R, 41G, and 41B.
• FIG. 6 is a circuit diagram showing the unit pixel 30 in FIG.
• Each unit pixel 30 selects a pixel array of a red LED element 41R that emits red light, a green LED element 41G that emits green light, a blue LED element 41B that emits blue light, and a red LED element 41R.
• the column selection switches 42R, 42G, and 42B are composed of MOS transistors.
• the force swords of the LED elements 41 R, 41 G, 41 B of all the unit pixels 30 are connected in common by the ground line 43.
• the anodes of the LED elements 41R, 41G, and 41B are connected to the drains of the corresponding selection switches 42R, 42G, and 42B, respectively.
• the source of the red column selection switch 42 R is connected in common to each pixel row by the horizontal source line 44 R, and the vertical scanning circuit 32 operated under the control of the video signal processing circuit 34 has a magnitude corresponding to the red luminance value. This voltage is received as a drive signal.
• the sources of the green column selection switch 42G are connected in common to each pixel row by the horizontal source line 44G, and receive a voltage having a magnitude corresponding to the green luminance value from the vertical scanning circuit 32 as a drive signal.
• the source of the blue column selection switch 42B is connected in common to each pixel row by the horizontal source line 44B, and receives a voltage having a magnitude corresponding to the blue luminance value from the vertical scanning circuit 32 as a drive signal.
• the gate of the red column selection switch 42R is connected in common to each pixel column by a vertical selection line 45R, and receives a red column selection signal from the horizontal scanning circuit 33 operating under the control of the video signal processing circuit 34.
• the gates of the green column selection switch 42G are connected to each pixel column in common by a vertical selection line 45G, and receive a green column selection signal from the horizontal scanning circuit 33.
• Blue column selection switch 42B gates are connected in common to each column by vertical selection line 45B Then, a blue column selection signal is received from the horizontal scanning circuit 33.
• the video signal processing circuit 34 obtains the luminance of each color of each pixel 30 based on the video signal and performs control corresponding to the value.
• the signals are output to the vertical scanning circuit 32 and the horizontal scanning circuit 33, respectively.
• the vertical scanning circuit 32 and the horizontal scanning circuit 33 are based on the control signal at a predetermined timing! /, And at a predetermined timing, the ON signals (selection signals) of the column selection switches 42R, 42G, and 42B for each color for each pixel column.
• Signal a voltage corresponding to the luminance value is output to the horizontal source lines 44R, 44G, and 44B of each color for each pixel row.
• FIG. 7 is a plan view schematically showing the arrangement of the LED elements 41R, 41G, 41B of the respective colors employed in the present embodiment.
• “R” indicates the red LED element 41R
• “G” indicates the green LED element 41G
• “B” indicates the blue LED element 41B.
• the number of unit pixels 30 is 3 ⁇ 3. These points are the same in FIGS. 8 and 9 described later.
• each unit pixel 30 is composed of a total of three LED elements 41R, 41G, and 41B, one for each color arranged in the row direction (left and right direction).
• the arrangement order of the LED elements 41R, 41G, 41B of the respective colors in the unit pixels 30 in the same row is the same force S, and the unit pixels 30 in the rows adjacent to each other in the column direction.
• the LED elements 41R, 41G, and 41B are out of order.
• each unit pixel 30 is composed of a total of 2 ⁇ 2 LED elements, one red LED element 41R, two green LED elements 41G, and one blue LED element 41B.
• FIG. 10 is a schematic cross-sectional view showing the LED device 21 according to the present embodiment.
• Figure 11 10 is an enlarged schematic cross-sectional view showing the hybridized chip 51 in FIG.
• FIG. 12 is a schematic plan view schematically showing a part of one unit pixel 30 (only some of the elements) of the LED substrate 52 constituting the chip 51 shown in FIG. 10 and
• FIG. 13 schematically shows a part of one unit pixel 30 corresponding to FIG. 12 (only some of the elements) of the drive circuit board 53 constituting the chip 51 shown in FIGS. 10 and 11.
• It is a schematic plan view. 12 and 13 are both viewed from the upper side of FIG. 11, but the lines that should be hidden lines are also shown as solid lines. Note that the cross section along the line AA ′ in FIG. 7, the cross section along the line BB ′ in FIG. 12, and the cross section along the line CC ′ in FIG. 13 are within one plane. Forces included The cross sections shown in FIGS. 10 and 11 are cross sections in the plane.
• the LED substrate 52 is provided on the substrate 61 and a substrate (second substrate) 61 such as one glass substrate that transmits light in a predetermined wavelength range (visible region in the present embodiment).
• a substrate (second substrate) 61 such as one glass substrate that transmits light in a predetermined wavelength range (visible region in the present embodiment).
• Each unit pixel 30 includes LED elements 41R, 41G, and 41B of the respective colors.
• the red LED element 41R includes a fluorescent layer 62R, an n-type impurity layer 63, and an active layer 64 serving as a light emitting layer, which are sequentially stacked on the lower surface side of the substrate 61 from the substrate 61 side. And a p-type impurity layer 65 and electrodes 66 and 67.
• the n-type impurity layer 63, the active layer 64, and the p-type impurity layer 65 are each composed of an epitaxially grown layer. A part of the n-type impurity layer 63 is not covered with the active layer 64 and the p-type impurity layer 65, and one electrode 66 is formed in the region.
• the other electrode 67 is formed on the p-type impurity layer 65.
• the materials of the layers 63 to 65 are set so that ultraviolet light is emitted from the active layer 64.
• each of the layers 63 to 65 is composed of a plurality of layers or a buffer layer is added as necessary. Illustration and description of the detailed structure are omitted. To do.
• the fluorescent layer 62R contains a fluorescent material that emits red light when excited by the ultraviolet light from the active layer 64 of the LED element 41R (for example, CaAlSiON: Eu or YOS: Eu).
• It is composed of a layer of light-transmitting resin (for example, epoxy resin or silicone resin).
• the green LED element 41G is different from the red LED element 41R only in that a fluorescent layer 62G is formed instead of the fluorescent layer 62R, and the blue LED element 41B is different from the red LED element 41R.
• the only difference is that the fluorescent layer 62B is formed in place of the fluorescent layer 62R, and therefore, a duplicate description thereof is omitted.
• the fluorescent layer 62G is a fluorescent material that emits green light when excited by the ultraviolet light from the active layer 64 of the LED element 41G (for example, ZnS: Cu, A1, (Ba, Sr, Ca) SiO: Eu, etc. Included)
• It is composed of a layer of light-transmitting resin (for example, epoxy resin or silicone resin).
• the fluorescent layer 62B is a fluorescent substance that emits blue light when excited by the ultraviolet light from the active layer 64 of the LED element 41B (for example, BAM: Eu (BaMgAl 2 O 3: Eu or (Sr, Ca, Ba, M
• Translucent resin for example, epoxy resin or
• each LED element 41R, 41G, 41B the n-type impurity layer 63, the active layer 64, the p-type impurity layer 65, and the electrodes 66, 67 are provided.
• the LED constituent layers constituting the LED element (excluding the fluorescent layers 62R, 62G and 62B) are 70, and the fluorescent layers 62R, 62G and 62B are the LED constituent layer 70 and the substrate 61, respectively. It is arranged between.
• the drive circuit 31 that is a part other than the LED elements 41R, 41G, and 41B is mounted on one drive circuit board 53 using a known semiconductor process technology. Yes.
• a silicon substrate is used as the drive circuit substrate 53.
• the drive circuit board 53 is electrically connected to the electrodes 66 and 67 of the LED elements 41R, 41G, and 41B of the LED board 52 by bumps 71 and 72, as shown in FIGS.
• the chip 51 includes an LED substrate 52 and a drive circuit substrate 53 that are bonded to each other by bumps 71 and 72.
• the above-described red column selection switch 42R includes a source electrode and a drain electrode (not shown) formed by a predetermined diffusion layer formed on the drive circuit board 53, and a gate electrode 73 disposed on a region between them. (See Fig. 13).
• the source is connected to a wiring pattern connected to the horizontal source line 44R.
• the drain is connected to an electrode 74 formed thereon and connected by a bump 72.
• the gate electrode 73 is connected to the vertical selection line 45R by a wiring pattern.
• the anode of the red LED element 41R and the drain of the red column selection switch 42R are electrically connected by a bump 72 provided between the electrodes 67 and 74.
• the red LED element 41R is electrically connected by a bump 71 provided between the force sword of the red LED element 41R, the ground wire 43, the force electrode 66, and the ground wire 43.
• the anodes of the LED elements 41G and 41B and the drains of the selection switches 42G and 42B are electrically connected by the respective bumps 72, and the force swords of the LED elements 41G and 42B and the ground wire 43 are connected to the respective bumps 71. Therefore, each is electrically connected.
• the bumps 71 and 72 are made of, for example, copper or gold.
• each color LED element 41R when a current flows between the electrodes 66 and 67, ultraviolet light is emitted from the active layer 64.
• the fluorescent layer 62R In the red LED element 41R, the fluorescent layer 62R is excited by the ultraviolet light from the active layer 64 to emit red light, and this red light is emitted upward through the substrate 61.
• the fluorescent layer 62G In the green LED element 41G, the fluorescent layer 62G is excited by the ultraviolet light from the active layer 64 to emit green light, and this green light is emitted upward through the substrate 61.
• the fluorescent layer 62B is excited by the ultraviolet light from the active layer 64 to emit blue light, and this blue light is emitted upward through the substrate 61.
• a groove 61a is formed at a position between adjacent LED elements on the substrate 61.
• the groove 61 a is formed substantially perpendicular to the surface of the substrate 61.
• the groove 61a may be left empty, but the same crosstalk suppressing effect can be obtained even if the groove 61a is embedded with a light reflecting material such as metal or formed on the surface of the groove 61a by vapor deposition. Can do.
• the chip 51 is mounted on the support board 54, and the predetermined electrode of the drive circuit board 53 of the chip 51 and the electrode 55 on the support board 54.
• the wire 56 is wire-bonded with a wire 56, and the wire 56 is sealed with a resin 57.
• a chip having an LED element including a transparent substrate corresponding to the substrate 61 in FIG. This is because, in general chips, if this is not done, the durability will deteriorate and the light extraction efficiency will decrease due to the high refractive index of the LED light emitting layer.
• the LED substrate 52 and the drive circuit substrate 53 are hybridized by the bumps 71 and 72.
• the light layers 62R, 62G, 62 ⁇ are respectively the LED constituent layers 70.
• the fluorescent layers 62 R, 62 G, 62 B are not exposed to the outside world even if they are not covered with a special protective film, etc. Therefore, according to the present embodiment, In addition, it is possible to reduce the influence of the outside world on the fluorescent layers 62R, 62G, 62B without covering with a special protective film, etc., and as a result, the durability can be improved.
• the wire 56 is mechanically weak, in this embodiment, Is What sealed with part only resin 57 of the ear 56.
• the chip 51 may be accommodated in the package 81 as shown in FIG.
• the package 81 includes a package body 81a and a sealing lid 81b that also serves as a display window, and is a so-called ball grid package.
• Each solder ball 82 provided on the bottom surface of the package body 81a is electrically connected to each electrode 84 bonded to the electrode of the drive circuit board 53 with a wire 83 through a path (not shown).
• FIG. FIG. 15, FIG. 16, FIG. 17 and FIG. 19 are schematic cross-sectional views schematically showing the respective steps of this manufacturing method.
• FIG. 18 is a schematic perspective view schematically showing a predetermined process of this manufacturing method.
• a substrate (first substrate) 91 serving as a basis for epitaxial growth of the n-type impurity layer 63 and the like of the LED component layer 70 is prepared.
• the substrate 91 for example, a sapphire substrate or a SiC substrate is used.
• the LED component layer 70 is formed on the substrate 91 by the amount of the LED elements 41R, 41G, and 41B of the plurality of chips 51 to be manufactured at once. That is, an n-type impurity layer 63, an active layer 64, and a p-type impurity layer 65 are sequentially formed on the substrate 91 by epitaxial growth, and unnecessary regions of the active layer 64 and the p-type impurity layer 65 are removed by etching. .
• the n-type impurity layer 63 remains formed on the entire surface of the substrate 91.
• the electrodes 66 and 67 are formed of gold or the like and patterned into a predetermined shape by etching.
• Figure 15 (a) shows this state.
• a substrate (third substrate) 92 for holding the LED component layer 70 and protecting the mechanical damage force is bonded to the surface of the LED component layer 70 opposite to the substrate 91. This bonding is temporary and will be peeled off later.
• the substrate 12 is bonded to the LED constituent layer 10 by the thermoplastic wax 93.
• the substrate 91 is removed from the LED constituent layer 70 to which the substrate 92 is bonded.
• Figure 15 (b) shows this state.
• a substrate (second substrate) 61 such as a glass substrate that transmits light in a predetermined wavelength region (visible region in the present embodiment) is prepared, and the fluorescent layer 62R described above is provided on the substrate 61. , 62G, 62B are formed at positions corresponding to the LED elements 41R, 41G, 41B of the respective colors.
• Figure 15 (c) shows this state. Note that the method of finally forming the fluorescent layers 62R, 62G, and 62B only in a partial region is well known.
• the surface of the substrate 61 has no irregularities due to a patterned layer, and the substrate 61 can be used after a process involving high temperature treatment such as formation of an epitaxial growth layer! / ,!
• the substrate 61 is not bent due to high temperature processing or the like. Therefore, the thickness of the fluorescent layers 62R, 62G, 62B can be made uniform with higher accuracy.
• the substrate 61 is polished before applying the fluorescent layers 62R, 62G, and 62B, if necessary. Polishing and flattening may be performed, and / or the fluorescent layers 62R, 62G, and 62B may be polished and flattened after the fluorescent layers 62R, 62G, and 62B are formed.
• the fluorescent layers 62R, 62G, and 62B may be formed by silk screen printing, for example.
• the lower surface (surface opposite to the substrate 92) of the LED constituent layer 70 in the state shown in FIG. 15 (b) and the upper surfaces of the fluorescent layers 62R, 62G, and 62B in the state shown in FIG. 15 (c). The surface opposite to the substrate 61).
• the fluorescent layers 62R, 62G, 62B are configured using an adhesive resin such as an epoxy resin or a silicone resin, the adhesive properties of the fluorescent layers 62R, 62G, 62B are utilized. Then, the LED component layer 70 and the fluorescent layers 62R, 62G, and 62B are joined.
• the LED constituting layer 70 and the fluorescent layers 62R, 62G, and 62B may be joined using a translucent adhesive. Thereafter, by removing the thermoplastic glass 93, the substrate 92 is peeled off from the LED constituent layer 70 and removed.
• Figure 16 (a) shows this state.
• a groove 61a is formed at a position between adjacent LED elements by dry etching or the like.
• the drive circuit board 53 is prepared by using a well-known semiconductor process technique (FIG. 16C).
• the drive circuit board 53 is provided with, for example, a CMOS circuit by a general CMOS process.
• bumps 71 and 72 for electrical connection with the LED elements 41R, 41G, and 41B are formed on the drive circuit board 53.
• FIG. 18 schematically shows this alignment.
• 101 indicates the substrate in the state shown in FIG. 16 (a)
• 102 indicates the drive circuit substrate 53 on which the bumps 71 and 72 shown in FIG. 17 (a) are formed.
• reference numerals 101a and 102a schematically show areas for one chip in the substrates 101 and 102, respectively.
• Such alignment is performed, and the electrodes 66 and 67 and the amplifiers 71 and 72 are joined.
• Fig. 17 (b) shows this state. Such bonding by bumps and hybridization by this are well-known techniques.
• the hybridized substrate in the state shown in FIG. 17 (b) is caused to divert IJ to each chip 51 by dicing.
• FIG. 19 shows this state. Thus, a plurality of chips 51 are completed at once.
• the LED device 21 according to the present embodiment shown in FIG. 10 is completed through known processes such as wire bonding and resin sealing.
• the thicknesses of the fluorescent layers 62R, 62G, 62B can be made uniform with higher accuracy as described above. Therefore, it is possible to further reduce variations in emission color and emission intensity between products and between multiple LED elements of the same product, which in turn can be achieved with the power S to further increase the yield.
• each unit pixel is configured by only one of the red LED element 41, the green LED element 41G, and the blue LED element 41B, monochrome display is performed. It can be a display device to perform.
• the drive circuit installed in 53 lights only the red LED element 41R in response to the red light illumination command signal, and turns on only the green LED element 41G in response to the green light illumination command signal. If only LED elements 41B are lit in response to the light and only LED elements 41R, 41G, 41B are lit in response to the white light illumination command signal, red light, green light, blue light and It is possible to provide an illumination device capable of selectively switching illumination with white light. In such an illuminating device, since the problem of crosstalk does not occur, the groove 6 la is unnecessary.
• FIGS. 20 and 21 are schematic cross-sectional views schematically showing the respective steps of the LED device manufacturing method according to the present modification.
• a substrate (first substrate) 91 serving as a basis for epitaxial growth of the n-type impurity layer 63 and the like of the LED component layer 70 is prepared.
• the substrate 91 for example, a sapphire substrate or a SiC substrate is used.
• the LED component layer 70 is formed on the substrate 91 for the plurality of LED chips 1 to be manufactured at once.
• the n-type impurity layer 63, the active layer 64, and the p-type impurity layer 65 are sequentially formed on the substrate 91 by epitaxial growth, and unnecessary regions of the active layer 64 and the p-type impurity layer 65 are removed by etching. At this time, the n-type impurity layer 63 remains formed on the entire surface of the substrate 91. Then, the electrodes 66 and 67 are formed of gold or the like and patterned into a predetermined shape by etching. Figure 20 (a) shows this state.
• the drive circuit board 53 is prepared using a known semiconductor process technology.
• the drive circuit board 53 is assumed to be provided with a CMOS circuit by a general CMOS process, for example.
• a silicon substrate is used as the drive circuit substrate 53, and an insulating film 75 is provided so as to cover a part of the silicon substrate.
• bumps 71 and 72 for electrical connection with the LED elements 41R, 41G, and 41B are formed on the drive circuit board 53.
• the bumps 71 and 72 are formed so as to be electrically connected to the electrode 43 and the electrode 74, respectively.
• the bumps 71 and 72 and the electrodes 74 and 43 are made of, for example, copper or gold.
• FIG. 20 (b) shows a drive circuit board on which bumps 71 and 72 are formed.
• FIG. 18 schematically shows this alignment.
• 101 indicates the substrate in the state shown in FIG. 20 (a)
• 102 indicates the drive circuit substrate 53 on which the bumps 71 and 72 shown in FIG. 20 (a) are formed.
• reference numerals 101a and 102a schematically show areas for one chip in the substrates 101 and 102, respectively.
• Such alignment is performed, and the electrodes 66 and 67 and the amplifiers 71 and 72 are joined to each other.
• the substrate 91 is removed from the LED component layer 70 to which the drive circuit substrate 53 is bonded.
• FIG. 20 (d) shows this state.
• the substrate 91 can be removed by, for example, scraping the substrate 91 with a grinder, or cutting the vicinity of the boundary between the LED component layer 70 and the substrate 91 with a water jet (high pressure jet water) or a wire saw. Power to do S
• the n-type impurity layer 63 is subjected to dry etching or the like to form a groove 63a at a position between adjacent LED elements as shown in FIG. 21 (a).
• a substrate (second substrate) 61 such as a glass substrate that transmits light in a predetermined wavelength region (visible region in this modification) is prepared, and the fluorescent layer 62R described above is provided on the substrate 61.
• 62G, 62B are formed at positions corresponding to the LED elements 41R, 41G, 41B of the respective colors.
• dry etching or the like is performed on the substrate 61 at a position corresponding to the groove 63a shown in FIG. 21 (a) to form a groove 61b as shown in FIG. 21 (b).
• the method of finally forming the fluorescent layers 62R, 62G, and 62B only in a partial region is well known.
• the surface of the substrate 61 is not uneven due to a patterned layer or the like, and that the substrate 61 that has not undergone a process involving high-temperature processing such as formation of an epitaxy growth layer can be used. There is no bending due to processing. Therefore, the thickness of the fluorescent layers 62R, 62G, 62B can be made uniform with higher accuracy. In order to make the thickness of the fluorescent layers 62R, 62G, 62B more uniform, the substrate 61 is polished and flattened before applying the fluorescent layers 62R, 62G, 62B, if necessary.
• the fluorescent layers 62R, 62G, 62B may be polished and planarized.
• the fluorescent layers 62R, 62G, and 62B may be formed by silk screen printing, for example.
• the force s that forms the groove 61b is formed first, and then the groove 61b is formed, and then the fluorescent layers 62R, 62G, and 62B are formed by a well-known method. It ’s good.
• the substrate 61 shown in FIG. 21 (b) and the substrate 91 including the LED constituent layer 70 and the electrode 66 shown in FIG. 21 (a) are aligned, and the fluorescent layers 62R, 62G, 62B are aligned. And n-type impurity layer 63 are bonded so as to be in contact with each other.
• Figure 21 (c) shows this state. [0103] After that, as in the second embodiment, the hybridized substrate in the state shown in Fig. 21 (c) is divided into chips by dicing. As a result, a plurality of chips 51 as shown in FIG. 19 are completed.
• the LED device 21 as shown in FIG. 10 is completed through known steps such as wire bonding and resin sealing.
• the thicknesses of the fluorescent layers 62R, 62G, and 62B can be made uniform with higher accuracy as described above. Therefore, variation in emission color and emission intensity can be further reduced between products and between a plurality of LED elements of the same product, and the yield can be further increased. Further, in this modification, since the drive circuit substrate 53 on which the drive circuit is formed is used as the third substrate in the second embodiment, one step of the substrate removal and bonding process can be omitted. .
• the drive circuit board 53 on which the drive circuit is mounted is used as the third board.
• a wiring board that is not initially mounted with the drive circuit is used.
• a drive circuit may be formed on the wiring board by a known method.
• another wiring board on which a drive circuit is mounted may be joined on the wiring board so as to be electrically connected.
• a board for example, a silicon board
• the electrodes 66 and 67 are electrically connected to the board by a well-known method such as hole formation or through-hole plating.
• the LED device may be manufactured by electrically connecting the wiring and the drive circuit.
• the influence of the outside world on the fluorescent layer can be reduced without being covered with a special protective film or the like, and as a result, the durability of the LED device can be improved.
• a manufacturing method can be provided.
• the thickness of the fluorescent layer can be made uniform with higher accuracy, and thereby the yield can be further increased.

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