WO2008038339A1 - Commutateur bimorphe - Google Patents

Commutateur bimorphe Download PDF

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Publication number
WO2008038339A1
WO2008038339A1 PCT/JP2006/319058 JP2006319058W WO2008038339A1 WO 2008038339 A1 WO2008038339 A1 WO 2008038339A1 JP 2006319058 W JP2006319058 W JP 2006319058W WO 2008038339 A1 WO2008038339 A1 WO 2008038339A1
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WO
WIPO (PCT)
Prior art keywords
bimorph
layer
main surface
surface side
switch
Prior art date
Application number
PCT/JP2006/319058
Other languages
English (en)
Japanese (ja)
Inventor
Koei Nishiura
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to PCT/JP2006/319058 priority Critical patent/WO2008038339A1/fr
Publication of WO2008038339A1 publication Critical patent/WO2008038339A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H61/00—Electrothermal relays
    • H01H2061/006—Micromechanical thermal relay

Definitions

  • the present invention relates to a bimorph switch that electrically connects a fixed contact provided on a substrate and a movable contact provided on a bimorph beam.
  • an electronic component testing apparatus is used to test the performance and function of the electronic components.
  • a test head electrically relays between a tester that actually executes a test and an electronic component to be tested, and this test head is a pin electronic circuit composed of an electric circuit board.
  • This test head is a pin electronic circuit composed of an electric circuit board.
  • a test head electrically relays between a tester that actually executes a test and an electronic component to be tested, and this test head is a pin electronic circuit composed of an electric circuit board.
  • a test head electrically relays between a tester that actually executes a test and an electronic component to be tested
  • this test head is a pin electronic circuit composed of an electric circuit board.
  • the bimorph switch as described above may be used as a pin electronics relay of the test head.
  • the temperature inside the test head may also increase. Also, the temperature inside the test head may increase due to self-heating of the devices on the pin electronics during the test. Due to these factors, the ambient temperature in the test head varies from before and after 20 ° C to about 90 ° C.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2004-55410
  • An object of the present invention is to provide a nomorph switch capable of ensuring stable contact by suppressing changes in contact gap and overload during contact.
  • a bimorph switch for electrically connecting a movable contact and a fixed contact, the substrate provided with the fixed contact, and the movable contact provided.
  • a bimorph switch is provided (see claim 1).
  • the present invention includes a first bimorph portion having a bimorph beam force heater and a second bimorph portion having no heater. Because the bimorph beam has these two types of bimorph parts, even if the ambient temperature around the bimorph switch changes, it is possible to cancel the changes that occurred in the first bimorph part with the second bimorph part. . As a result, changes in the contact gap caused by changes in the ambient temperature and overloading during contact can be suppressed, and stable contact can be ensured. In addition, since the heating temperature of the heater can be set without depending on the change in the ambient temperature, the heater temperature can be easily controlled.
  • the movable contact is opposed to the fixed contact.
  • it is provided at one end of the first bimorph part or the second bimorph part U, so that it faces (see claim 2).
  • the two layers of the first bimorph portion include a first layer constituted by a first material force and a coefficient of thermal expansion higher than that of the first material.
  • a second layer made of a relatively large second material, and the heater is interposed between the first layer and the second layer, and the second layer
  • the two layers of the bimorph portion include a first layer constituted by the first material force and a second layer constituted by the second material force. 3).
  • the first material includes silicon and the second material includes copper (see claim 4).
  • the first morph portion is provided on a distal end side of the bimorph beam, and the second morph portion is generated by a change in ambient temperature.
  • the bimorph beam is provided on the rear end side of the bimorph beam so as to cancel the change of the first bimorph portion, and the bimorph beam is fixed to the substrate at the rear end (see claim 5). ).
  • the bimorph beam has a shape that is bent from the front end toward the rear end, and in the first bimorph portion, the first bimorph portion has the first main surface on the first main surface side.
  • the second layer is provided on the other main surface side, and the first layer is provided on one main surface side in the second nomorph portion.
  • the second layer is provided on the other main surface side (see claim 6).
  • the bimorph beam has a shape extending substantially linearly from the rear end toward the tip, and in the first bimorph portion, The first layer is provided on the main surface side, and the second layer is provided on the other main surface side. In the second bimorph portion, the first layer is provided on the one main surface side. It is preferable that two layers are provided and the first layer is provided on the other main surface side (see claim 7).
  • the first nomorph portion is the bi-axial portion.
  • the second bimorph portion is provided at the center of the morph beam, and the second bimorph portion is provided at both ends of the bimorph beam so as to cancel out the change in the first bimorph portion caused by the change in ambient temperature. (See claim 8).
  • the bimorph beam is fixed to the substrate at both ends thereof, and the second layer is provided on one main surface side in the first bimorph portion.
  • the first layer is provided on the other main surface side, and the first bilayer portion is provided with the first layer on one main surface side, and the other main surface side. It is preferable that the second layer is provided on the substrate (see claim 9).
  • FIG. 1 is a plan view showing an overall configuration of a bimorph switch according to a first embodiment of the present invention.
  • FIG. 2 is a sectional view taken along the line ⁇ - ⁇ in FIG.
  • FIG. 3 is a cross-sectional view taken along the line ⁇ - ⁇ in FIG.
  • FIG. 4A is a schematic view of the bimorph beam according to the first embodiment of the present invention as viewed from the side, and shows a state where the heater is turned off at an ambient temperature of 25 ° C.
  • FIG. 4B is a schematic view of the bimorph beam according to the first embodiment of the present invention in which the side force is also viewed, and shows a state where the heater is turned off at an ambient temperature of 90 ° C.
  • FIG. 4C is a schematic view of the bimorph beam in the first embodiment of the present embodiment as viewed from the side, and shows a state where the heater is turned on at an ambient temperature of 25 ° C.
  • FIG. 4D is a schematic view of the bimorph beam in the first embodiment of the present invention as seen from the side, and shows a state in which the heater is turned on at an ambient temperature of 90 ° C.
  • FIG. 5A is a graph showing an operation line of the bimorph switch according to the first embodiment of the present invention.
  • FIG. 5B is a graph showing an operation line of a conventional cantilever type bimorph switch.
  • FIG. 6 is a plan view showing a bimorph switch according to a second embodiment of the present invention.
  • FIG. 7A is a plan view showing a bimorph switch according to a third embodiment of the present invention.
  • FIG. 7B is a cross-sectional view taken along line VIIB-VIIB in FIG. 7A.
  • FIG. 8A is a plan view showing a bimorph switch according to a fourth embodiment of the present invention.
  • FIG. 8B is a cross-sectional view taken along line VIIIB-VIIIB in FIG. 8A.
  • FIG. 1 is a plan view showing the overall configuration of the bimorph switch according to the first embodiment of the present invention
  • FIG. 2 is a cross-sectional view taken along line ⁇ - ⁇ in FIG. 1
  • FIG. 3 is a cross-sectional view taken along line ⁇ - ⁇ It is.
  • the bimorph switch 1A As shown in FIGS. 1 to 3, the bimorph switch 1A according to the first embodiment of the present invention includes a substrate 10 having fixed contacts 11 and 12 provided on the surface, and a movable contact 44 provided at the tip.
  • the bimorph beam 20A is bent by the heating of the heater 42 so that the movable contact 44 electrically connects the fixed contacts 11 and 12 to each other.
  • This bimorph switch 1A is a MEMS switch with a size of about 1840 ⁇ m X HOO ⁇ m. For example, it should be mounted as a switching relay on the pin electronics provided in the test head of the electronic component test equipment. Can do.
  • the substrate 10 is made of, for example, a glass substrate having a borosilicate glass isotropic force.
  • fixed terminals 11 and 12 having, for example, gold (Au) isotropic force are formed by a plating process or an etching process.
  • the fixed terminals 11 and 12 are electrically connected to an electric circuit constituting pin electronics (not shown).
  • the bimorph beam 20A in the present embodiment includes three bimorph portions 40 to 60 as shown in FIG. It is bent toward the rear ends 52 and 62 of both the Nomonoreflex beam 20 mm and the tip 43 force, and has a generally letter shape as a whole.
  • the first bimorph portion 40 and the second bimorph portion 50 and the third bimorph portion 40 are arranged such that the tip 43 (hereinafter also simply referred to as the movable end 43) faces the fixed contacts 11 and 12 on the substrate 10.
  • the second and third bimorph sections 50 and 60 are positioned at the end 45 (hereinafter simply referred to as a continuous section 45) opposite to the movable end 43.
  • the first bimorph section 40 and the second bimorph sections 50 and 60 are integrated together! /.
  • the second bimorph portion 50 extends from the continuous portion 45 so as to return toward the tip 43 side, and is an end portion 52 in the vicinity of the movable end 43 (hereinafter simply referred to as a fixed end 52).
  • the substrate 10 is fixed to the substrate 10 via the support portion 53.
  • the third bimorph portion 60 also extends from the continuous portion 45 so as to return toward the tip 43 side, and is an end 62 in the vicinity of the movable end 43 (hereinafter simply referred to as a fixed end 62). , Support part 63 Via the substrate 10.
  • first bimorph section 40 in the present embodiment corresponds to the first bimorph section in the present invention
  • second and third neomorph sections 50, 60 in the present embodiment correspond to the present application. This corresponds to the second bimorph portion in the invention.
  • the first bimorph section 40 has a Si layer 30 composed of silicon force and a first Cu layer 41 composed of copper force. A first Cu layer 41 is formed thereon. Further, the first bimorph section 40 has a thin film heater 42 interposed between the Si layer 30 and the first Cu layer 41. The heater 42 is connected to a power source (not shown), and generates heat in the first bimorph section 40 when electric power is supplied. In the present invention, the position of the thin film heater 42 is not limited to between the Si layer 30 and the first Cu layer 41, and the thin film heater 42 is placed on the upper layer portion, the lower layer portion, or both surfaces of the first bimorph portion 40. You may arrange in.
  • the thin film heater 42 is formed to meander on the Si substrate 30 by, for example, etching the platinum (Pt) on the upper surface of the Si substrate 30.
  • a first Cu layer 41 is formed by vacuum deposition, sputtering, or the like. Further, the entire first bimorph portion 40 is coated with a protective layer 31 made of an oxide silicon (ie, silicon) using a method such as CVD. And protective layer 31
  • a movable contact 44 made of gold (Au) is formed on the lower surface of the movable end 43 of the first bimorph portion 40 coated with (1) by sputtering or the like.
  • the first bimorph portion 40 and the second bimorph portion are within a range in which the first bimorph portion 40 can be supported.
  • the thickness and shape of the first bimorph section 40 and the second bimorph sections 50, 60 are set so that the ONZOFF operation of the fixed contacts 11, 12 and the movable contact 44 can be performed in several tens of milliseconds or less. It is preferable to configure.
  • the thermal expansion coefficient of the first Cu layer 41 is relatively larger than the thermal expansion coefficient of the Si layer 30.
  • the thin film heater 42 when the thin film heater 42 is heated, the first Cu layer 41 is larger than the Si layer 30. As a result, the first bimorph section 40 is bent downwardly so that the movable contact 44 contacts the fixed contacts 11 and 12 (see the dotted line in FIG. 2). .
  • the second bimorph section 50 includes a Si layer 30 configured with a silicon force and a second Cu layer 51 configured with a copper force. Unlike the first bimorph section 40, the second bimorph section 50 does not have a thin film heater 42 formed between the Si layer 30 and the second Cu layer 41.
  • the second Cu layer 41 is formed on the Si substrate 30 by vacuum deposition, sputtering, or the like. Further, like the first bimorph section 40, the entire second bimorph section 50 is coated with a protective layer 31 made of silicon oxide (SiO 2) using a technique such as CVD.
  • SiO 2 silicon oxide
  • the fixed end 52 of the second bimorph portion 50 is provided with a support portion 53 constituted by S, and the support portion 53 is bonded to the substrate 10 by anodic bonding or the like.
  • the third bimorph portion 60 has a structure similar to that of the second bimorph portion 50, although not particularly shown, and a third Cu layer that also has copper force on the Si substrate 30 that also has silicon force. 61 is formed, and the third bimorph portion 60 is made entirely of silicon oxide (SiO 2).
  • the fixed end 62 of the third nomorph part 60 is provided with a support part 63 constituted by S, and the support part 63 is joined to the substrate 10.
  • the thermal expansion coefficient of the Cu layers 51, 61 is relatively larger than the thermal expansion coefficient of the Si layer 30. For this reason, when the ambient temperature in the test head rises, the Cu layers 51 and 61 expand more greatly than the Si layer 30.
  • the Si layers 30 of the first to third bimorph portions 40 to 60 are all composed of the same Si substrate, and the Si substrate 30 is subjected to a predetermined process such as etching or sputtering. By applying the treatment, the first to third bimorph portions 40 to 60 are formed!
  • the force exemplified by the silicon layer as the insulating layer 30 is not particularly limited in the present invention, and may be constituted by an insulating substrate having an insulating material force other than silicon.
  • the force described by exemplifying the Cu layer as the metal layer is not particularly limited in the present invention.
  • an aluminum layer, a nickel layer, a titanium layer, etc. A metal layer having a coefficient of thermal expansion different from that of the insulating layer can be applied.
  • FIGS. 4A to 4D are schematic views of the bimorph beam according to the first embodiment of the present invention in which the side force is also viewed.
  • the second and third bimorph sections 50, 60 are bent from the fixed ends 52 and 62 so that the continuous portion 45 is located at a height h above the reference line 70.
  • the first bimorph portion 40 is warped so that the continuous portion 45 is located at a height h above the reference line 70 and the movable end 44 is located at a height h above the reference line 70. This state
  • the height h is a number
  • the reference line 70 is a virtual line indicating the flat first to third bimorph portions 40 to 60 in which no warpage occurs.
  • the ambient temperature in the test head rises to about 90 ° C due to self-heating of the pin electronics device without supplying power to the heater 42, as shown in FIG. 4B
  • the second and third Cu layers 51 and 61 have a larger coefficient of thermal expansion than the Si layer 30, so the warpage of the second and third bimorph portions 50 and 60 is weakened, and the continuous portion 45 is based.
  • the height h is located above the quasi-line 70 (h> h).
  • the first Cu layer 41 has a higher coefficient of thermal expansion than the Si layer 30, the first bimorph portion 40 also has less warpage, and the continuous portion 45 is higher above the reference line 70. Is located at h
  • the movable end 44 is positioned substantially on the reference line 70, and the non-contact state between the movable contact 44 and the fixed contact 11 is maintained.
  • the bimorph switch 1A even if the ambient temperature in the test head changes greatly, for example, between 25 ° C and 90 ° C, it occurs in the first bimorph section 40.
  • the bending change is offset by the bending change of the second and third bimorph parts 50 and 60, and the position of the movable end 44 of the bimorph beam 20A is maintained almost constant, so that the variation in the ambient temperature in the test head can be avoided. Without depending on this, the movable contact 44 and the fixed contact 11 can stably maintain a non-contact state (off state).
  • the movable contact 44 and the fixed contact 11 can stably maintain a non-contact state (off state).
  • the second and third bimorph parts 50 and 60 maintain a state where the height h of the reference line 70 is warped upward.
  • the second and third layers are higher than the Si layer 30 as shown in FIG. 4D. Since the Cu layers 51 and 61 have a higher coefficient of thermal expansion, the warpage of the second and third bimorph parts 50 and 60 is weakened, and the second and third bimorph parts 50 and 60, as in FIG. 60 is warped by a height h above the reference line 70 with the fixed ends 52 and 62 as base points (h> h).
  • the continuous portion 45 has a height h above the reference line 70.
  • the bimorph switch 1A even if the ambient temperature in the test head changes greatly, for example, between 25 ° C and 90 ° C, it occurs in the first bimorph section 40. Since the change is canceled out by the change in the second and third bimorph parts 50, 60, the movable contact 44 and the fixed contact 11 are in a stable contact state without depending on the change in the ambient temperature in the test head ( ON state) can be maintained.
  • the change caused by the first bimorph section 40 due to the temperature change of the atmosphere in the test head (atmosphere around the bimorph switch 1A). Since the second and third morphs 50 and 60 cancel each other, changes in the contact gap caused by changes in the ambient temperature and overload during contact can be suppressed, and stable contact can be ensured. It becomes possible.
  • FIG. 5A is a graph showing the operation line of the bimorph switch according to the first embodiment of the present invention
  • FIG. 5B is a graph showing the operation line of the conventional cantilever type bimorph switch. Note that the vertical axis in FIGS. 5A and 5B indicates that the movable contact 44 and the fixed contact 11 Indicates the clearance [/ zm] in the separated state, and indicates the pressing force [mN] between the fixed contact 11 and the movable contact 44 in the contact state above zero.
  • a substantially constant clearance [m] does not depend on the ambient temperature fluctuation (25 ° C to 90 ° C) in the test head. Or, a substantially constant pressing force [mN] can be maintained. Therefore, in the bimorph switch 1A according to the present embodiment, it is possible to easily perform stable on / off control of the switch without being affected by the ambient temperature.
  • the movable contact 43 and the fixed contact 11 can be stably brought into electrical contact without depending on the ambient temperature in the test head, and the force can be increased. Since the required pressing force [mN] can be obtained with a constant applied power, the temperature control of the heater 42 becomes easy.
  • FIG. 6 is a plan view showing a bimorph switch according to a second embodiment of the present invention.
  • the bimorph switch 1B according to the second embodiment of the present invention is different from the bimorph switch 1A according to the first embodiment in that the third bimorph section 60 is not provided. If sufficient mechanical strength can be secured when the movable contact 4 4 and the fixed contact 11 are in contact, as shown in FIG. 6, the bimorph beam 20B is connected to the first bimorph section 40 and the first The first bimorph part 40 may be supported by only one bimorph part 50 without heater.
  • FIG. 7A is a plan view showing a bimorph switch according to a third embodiment of the present invention
  • FIG. 7B is a cross-sectional view taken along line VIIB-VIIB in FIG. 7A.
  • a bimorph switch 1C according to a third embodiment of the present invention is as shown in FIGS. 7A and 7B.
  • a bimorph beam 20C extending substantially linearly from the fixed end 52 to the movable end 43 is provided.
  • the bimorph beam 20C includes a first bimorph portion 40 on the movable end 43 side and a second bimorph portion 50 on the fixed end 52 side.
  • the first Cu layer 41 is formed on the Si substrate 30 as in the first embodiment.
  • the second bimorph portion 50 in the present embodiment is different from the first embodiment in that the second Cu layer 41 is formed on the lower surface of the Si substrate 30 and the second nanomorph portion is formed. 50 has a layer configuration opposite to the layer configuration of the first bimorph section 40.
  • the thin film heater 42 may be provided on the upper layer portion, the lower layer portion, or both surfaces of the first nanomorph portion 40.
  • a notch between the first bimorph portion 40 and the second bimorph portion 50 may be provided.
  • the second bimorph section 50 cancels out the change generated in the first bimorph section 40 due to the temperature change of the atmosphere in the test head (atmosphere around the bimorph switch 1C). Therefore, it is possible to suppress a change in contact gap caused by a change in ambient temperature and an overload at the time of contact, and to secure a stable contact.
  • FIG. 8A is a plan view showing a bimorph switch according to a fourth embodiment of the present invention
  • FIG. 8B is a cross-sectional view taken along line VIIIB-VIIIB of FIG. 8A.
  • the bimorph beam 20D is fixed to the substrate 10 at both ends 52, 62 via the support portions 53, 63. It has a double-supported beam structure. Therefore, unlike the other embodiments, the movable contact 44 is provided at a substantially central portion of the bimorph beam 20D.
  • the bimorph beam 20D in the present embodiment includes a first bimorph section 40 at the center thereof and second and third bimorph sections 50 and 60 at both ends thereof.
  • the first bimorph section 40 has a first Cu layer 41 formed on the lower surface of the Si substrate 30.
  • the second bimorph portion 50 in the present embodiment is Similar to the first embodiment, a second Cu layer 51 is formed on the upper surface of the Si substrate 30.
  • a third Cu layer 61 is formed on the upper surface of the Si substrate 30 as in the first embodiment. That is, in the present embodiment, the second and third bimorph portions 50 and 60 have a layer configuration opposite to the layer configuration of the first bimorph portion 40.
  • the first bimorph section 40 in the present embodiment corresponds to the first bimorph section in the present invention
  • the second and third bimorph sections 50, 60 in the present embodiment are the second bimorph sections in the present invention. Corresponds to the bimorph part.
  • the change in the first bimorph part 40 due to the temperature change of the atmosphere in the test head is changed to the second and third bimorph parts. Since it can be offset by 50 and 60, changes in the contact gap caused by changes in the ambient temperature and overload during contact can be suppressed, and stable contact can be secured.
  • the second bimorph portion 50 when the first bimorph portion 40 is positioned on the front end side, the second bimorph portion 50 is positioned on the rear end side, and is movable to the front end of the first bimorph portion 40.
  • the contact 44 is provided and the second bimorph portion 50 is fixed to the substrate 10 in the present invention, the present invention is not particularly limited to this.
  • the second bimorph portion 50 is positioned on the front end side, the first bimorph portion 40 is positioned on the rear end side, the movable contact 44 is provided at the front end of the second neomorph portion 50, and the first bimorph portion 40 is provided.
  • the part 50 may be fixed to the substrate 10.
  • a second thin film heater (not shown) for heating and bending the second bimorph portion 50 may be added to the second bimorph portion 50 side.
  • the second thin film heater is controlled to be in an unheated state, and when the thin film heater 42 is in an unheated state, the second thin film heater is heated.
  • the moving stroke of the movable end 43 can be almost doubled, and as a result, the allowable range for the production variation of the bimorph switch can be increased.
  • the contact capacity can be reduced by widening the contact gap. Suitable for high frequency relays.

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  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Thermally Actuated Switches (AREA)

Abstract

Le commutateur bimorphe (1A) de la présente invention comprend un substrat (10) équipé d'un contact fixe (11) et un axe bimorphe (20A) pourvu, à son extrémité distale (43), d'un contact mobile (44), l'axe bimorphe (20A) comprenant : une première partie bimorphe (40) pourvue d'une couche de Si (30) et d'une première couche de Cu (41), un élément de chauffage à film mince (42) étant intercalé entre les deux couches (30, 41) ; une deuxième partie bimorphe (50) pourvue d'une couche de Si (30) et d'une deuxième couche de Cu (51), ladite deuxième partie ne comprenant pas de chauffage intercalé entre les couches (30, 51) ; et une troisième partie bimorphe (60) pourvue d'une couche de Si (30) et d'une troisième couche de Cu (61), ladite troisième partie ne comprenant pas de chauffage intercalé entre les couches (30, 61).
PCT/JP2006/319058 2006-09-26 2006-09-26 Commutateur bimorphe WO2008038339A1 (fr)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253623A (ja) * 2010-05-31 2011-12-15 Advantest Corp アクチュエータ装置、試験装置、およびアクチュエータ制御方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52162473U (fr) * 1976-06-02 1977-12-09
JPH06267383A (ja) * 1993-03-16 1994-09-22 Sharp Corp マイクロリレーおよびその製造方法
JP2003062798A (ja) * 2001-08-21 2003-03-05 Advantest Corp アクチュエータ及びスイッチ
JP2006073337A (ja) * 2004-09-01 2006-03-16 Advantest Corp バイモルフ素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52162473U (fr) * 1976-06-02 1977-12-09
JPH06267383A (ja) * 1993-03-16 1994-09-22 Sharp Corp マイクロリレーおよびその製造方法
JP2003062798A (ja) * 2001-08-21 2003-03-05 Advantest Corp アクチュエータ及びスイッチ
JP2006073337A (ja) * 2004-09-01 2006-03-16 Advantest Corp バイモルフ素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253623A (ja) * 2010-05-31 2011-12-15 Advantest Corp アクチュエータ装置、試験装置、およびアクチュエータ制御方法

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