WO2008032637A1 - Transistor organique, et procédé de fabrication d'un transistor organique - Google Patents

Transistor organique, et procédé de fabrication d'un transistor organique Download PDF

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Publication number
WO2008032637A1
WO2008032637A1 PCT/JP2007/067418 JP2007067418W WO2008032637A1 WO 2008032637 A1 WO2008032637 A1 WO 2008032637A1 JP 2007067418 W JP2007067418 W JP 2007067418W WO 2008032637 A1 WO2008032637 A1 WO 2008032637A1
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Prior art keywords
organic
electrode
semiconductor layer
drain electrode
organic semiconductor
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PCT/JP2007/067418
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English (en)
Japanese (ja)
Inventor
Ryoya Takahashi
Masaaki Kurita
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Brother Kogyo Kabushiki Kaisha
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Publication of WO2008032637A1 publication Critical patent/WO2008032637A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Definitions

  • the present invention relates to an organic transistor and an organic transistor manufacturing method, and more particularly to an organic transistor that can provide high transistor performance and is easy to manufacture, and a manufacturing method thereof.
  • organic field effect transistors using organic semiconductors as channel layers have attracted attention.
  • organic transistors do not require large-scale equipment such as vacuum equipment in the manufacturing process, and can therefore realize low-cost processes. It has the characteristics.
  • FIG. 9 is a diagram for explaining a manufacturing process of the conventional organic transistor 100.
  • FIG. 9 (a) for example, in the process of manufacturing the source and drain electrodes of an organic transistor, first, an electrode material layer 116 is formed on the gate insulating layer 106 in which the gate electrode 104 is embedded, and then the electrode material layer 116 is formed thereon. Then, a resist 118 is applied. Next, as shown in FIG. 9 (b), a mask pattern 120 is placed thereon and exposed to form a resist 118 pattern as shown in FIG. 9 (c).
  • the metal layer 116 is removed by etching to be covered with the resist 118, and the pattern of the source / drain electrode 124 is formed as shown in FIG. 9 (d).
  • the resist 118 is stripped, and finally, as shown in FIG. 9 (f), an organic semiconductor layer 126 is formed on the source / drain electrode 124.
  • Patent Document 1 JP 2005-243731 A
  • the organic semiconductor layer 126 is formed using a soluble organic semiconductor material
  • a solvent in which the organic semiconductor material is dissolved is used in the step of forming the organic semiconductor layer 126 (see FIG. 9F).
  • the source / drain electrode 124 made of metal and the solvent are poorly adhered, the source / drain electrode 124 There was a problem that the solvent applied on top spread and the coating cannot be performed accurately.
  • FIG. 10 is a view of the organic semiconductor layer 126 formed by coating in a conventional organic transistor manufacturing process as viewed from above. As shown in FIG. 10, when the applied solvent spreads due to bleeding, the organic semiconductor layer 126 is formed in a wider area than the source and drain electrodes 124, and the carrier movement path in the organic semiconductor layer 126 is It becomes a large turn and causes a drop in transistor performance (mobility).
  • FIG. 11 is a cross-sectional view showing a schematic cross section of the conventional organic transistor 100 in the case where the organic semiconductor layer 126 is composed of a collection of crystal grains 126a.
  • a part of the crystal grain 126a of the organic semiconductor layer 126 is schematically illustrated.
  • the source / drain electrode 124 is made of metal, it contacts the source / drain electrode 124 having a large surface energy difference. At the interface, the crystal grain 126a does not grow greatly. As a result, there was a problem that current did not flow efficiently and transistor performance could not be obtained! / And! /.
  • the present invention has been made to solve the above problems, and provides an organic transistor that can achieve high transistor performance and is easy to manufacture, and a method for manufacturing the same. And Mejiro.
  • an organic transistor according to claim 1 includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, and a gate insulating layer.
  • An organic monomolecular film is interposed between the upper surface of the drain electrode and the organic semiconductor layer, and between the side surface of the source electrode and the organic semiconductor layer, and between the side surface of the drain electrode and the organic semiconductor layer, It is characterized by the absence of organic monolayers.
  • the organic transistor according to claim 2 is formed on a source electrode and a drain electrode formed on a substrate, an organic semiconductor layer formed on the source electrode and the drain electrode, and an organic semiconductor layer.
  • the organic monomolecular film is interposed between the side surface of the source electrode and the organic semiconductor layer and between the side surface of the drain electrode and the organic semiconductor layer. It is characterized by that.
  • the organic transistor according to claim 3 is the organic transistor according to claim 1 or 2, wherein the organic monomolecular film has a bonding group that selectively adsorbs to the source electrode and the drain electrode, and water repellency. It is characterized by being comprised by the organic molecule provided with the terminal group of.
  • a method for producing an organic transistor according to claim 5 includes a source electrode and a drain electrode formed on a substrate, an organic semiconductor layer formed on the source electrode and the drain electrode, and an organic semiconductor A method of manufacturing an organic transistor having a gate insulating layer formed on a layer and a gate electrode on the gate insulating layer, wherein the water-repellent organic single layer is formed on the electrode material layer formed on the substrate.
  • Source / drain electrode formation process for forming drain electrodes, and organic semiconductors on the source and drain electrodes whose upper surfaces are covered with the organic monomolecular pattern film Characterized in that it comprises an organic semiconductor layer forming step of forming a.
  • the method for producing an organic transistor according to claim 6 is the method for producing an organic transistor according to claim 4 or 5, wherein the pattern film forming step includes a solution of organic molecules forming the organic monomolecular pattern film. Is applied to the convex portion of the stamp, and the convex portion is pressed against the electrode material layer to form the organic monomolecular pattern film.
  • the method for producing an organic transistor according to claim 7 is the method for producing the organic transistor according to claim 6, wherein the nano ink containing metal nanoparticles is applied by a spin coating method or a bar coating method, and the electrode is formed. An electrode material layer forming step of forming a material layer is provided.
  • the organic transistor of claim 1 in the organic transistor having a bottom gate structure, there is no organic between the upper surface of the source electrode and the organic semiconductor layer and between the upper surface of the drain electrode and the organic semiconductor layer. Since the monomolecular film is interposed, when the organic semiconductor layer is composed of a collection of crystal grains, the crystal grains of the organic semiconductor layer grow greatly on the source electrode and the drain electrode. Therefore, if current flows efficiently in the organic semiconductor layer and high transistor performance is obtained, there is an effect! [0018] Since no organic monomolecular film is interposed between the side surface of the source electrode and the organic semiconductor layer and between the side surface of the drain electrode and the organic semiconductor layer, the side surface of the source electrode and the organic semiconductor layer are not present. The current flows efficiently between the body layer and between the side surface of the drain electrode and the organic semiconductor layer, and there is an effect that a high performance and transistor performance can be obtained.
  • the organic transistor of claim 2 in the organic transistor having a top gate structure, there is no organic between the upper surface of the source electrode and the organic semiconductor layer and between the upper surface of the drain electrode and the organic semiconductor layer. Since the monomolecular film is interposed, when the organic semiconductor layer is composed of a collection of crystal grains, the crystal grains of the organic semiconductor layer grow greatly on the source electrode and the drain electrode. Therefore, if current flows efficiently in the organic semiconductor layer and high transistor performance is obtained, there is an effect!
  • the organic monomolecular film is selectively adsorbed to the source electrode and the drain electrode. Since it is composed of an organic molecule having a binding group and a water-repellent end group, the water-repellent end group constitutes the uppermost surface of the organic monomolecular film.
  • an organic semiconductor is applied, an organic solvent is used, and knowledge has been obtained that some of the molecules of the organic solvent and water-repellent end groups are easily adsorbed.
  • the organic monomolecular film functions as a fixing agent, and the spread (spreading) of the applied solvent is suppressed. an effect force s that high transistor performance can be obtained.
  • a water-repellent organic monomolecular pattern film is formed on the electrode material layer by the pattern film forming step, and the organic layer is formed by the source and drain electrode forming step.
  • the exposed electrode material layer in the voids of the monomolecular pattern film is removed by wet etching to form a source electrode and a drain electrode whose upper surfaces are covered with the organic monomolecular pattern film.
  • the organic semiconductor layer forming step Since the organic semiconductor layer is formed on the source electrode and the drain electrode whose upper surfaces are covered with the sub-pattern film, the number of processes is reduced compared to the conventional manufacturing method, and the manufacturing can be easily performed.
  • the organic monomolecular pattern film functions as a resist layer during wet etching, and the organic semiconductor layer is formed without removing the organic monomolecular pattern film.
  • the number of processes is reduced compared to the conventional manufacturing method, which required this.
  • the organic semiconductor layer is formed on the source electrode and the drain electrode in a state where the upper surface is covered with the organic monomolecular pattern film, the organic semiconductor layer is constituted by a collection of crystal grains.
  • the crystal grains of the organic semiconductor layer grow large on the source electrode and the drain electrode. Therefore, there is an effect that an electric current can be efficiently flowed in the organic semiconductor layer and an organic transistor with improved transistor performance can be obtained.
  • the water-repellent organic monomolecular pattern film functions as a fixing agent, and the applied solvent bleeds (spreads). ) Is suppressed, the transistor performance is high! And an organic transistor can be obtained. In addition, since the patterning accuracy by coating is improved, it is an effective method for miniaturization of organic transistors.
  • the transistor obtained by the method for producing an organic transistor according to claim 4 includes an organic single layer between the side surface of the source electrode and the organic semiconductor layer and between the side surface of the drain electrode and the organic semiconductor layer. Since no molecular pattern film is interposed, current flows efficiently between the side surface of the source electrode and the organic semiconductor layer and between the side surface of the drain electrode and the organic semiconductor layer, resulting in high transistor performance. It has an effect.
  • a water-repellent organic monomolecular pattern film is formed on the electrode material layer by the pattern film forming step, and the organic layer is formed by the source and drain electrode forming step.
  • the exposed electrode material layer in the voids of the monomolecular pattern film is removed by wet etching to form source and drain electrodes whose upper surfaces are covered with the organic monomolecular pattern film.
  • the organic semiconductor layer is formed on the source electrode and the drain electrode whose upper surfaces are covered with the organic single-layer pattern film by the organic semiconductor layer forming process, so that the number of processes is reduced as compared with the conventional manufacturing method. Easy to manufacture There is an effect.
  • the organic monomolecular pattern film functions as a resist layer during wet etching, and the organic semiconductor layer is formed without removing the organic monomolecular pattern film.
  • the number of processes is reduced compared to the conventional manufacturing method, which required this.
  • the organic semiconductor layer is formed on the source electrode and the drain electrode in a state where the upper surface is covered with the organic monomolecular pattern film, the organic semiconductor layer is constituted by a collection of crystal grains.
  • the crystal grains of the organic semiconductor layer grow large on the source electrode and the drain electrode. Therefore, there is an effect that an electric current can be efficiently flowed in the organic semiconductor layer and an organic transistor with improved transistor performance can be obtained.
  • the transistor obtained by the method for producing an organic transistor according to claim 5 has an organic single layer between the side surface of the source electrode and the organic semiconductor layer and between the side surface of the drain electrode and the organic semiconductor layer. Since no molecular pattern film is interposed, current flows efficiently between the side surface of the source electrode and the organic semiconductor layer and between the side surface of the drain electrode and the organic semiconductor layer, resulting in high transistor performance. It has an effect.
  • the pattern film forming step includes an organic monomolecular pattern film.
  • a water-repellent organic monomolecular pattern film is formed by applying a solution of molecules to be formed onto the convex portions of the stamp and pressing the convex portions against the electrode material layer.
  • the nano ink containing metal nanoparticles is formed by the electrode material layer forming step. Also in the electrode material layer formed by applying the spin coat method or the bar coat method, the stamp convex portion is brought into close contact with the electrode material layer so that the water-repellent organic component is separated. The child pattern film can be transferred to the electrode material layer. Therefore, the source electrode and drain electrode manufacturing process formed by the above method can be easily formed without using any vacuum process. Thus, the cost of the entire process can be greatly reduced.
  • FIG. 1 is a cross-sectional view schematically showing a configuration of an organic transistor according to a first embodiment of the present invention viewed from a cross-sectional direction, and a partially enlarged view of an organic monomolecular film.
  • FIG. 2 is a diagram for explaining a method of manufacturing the organic transistor shown in FIG.
  • FIG. 3 is a diagram showing a pattern film forming step.
  • FIG. 4 is a cross-sectional view showing an organic transistor when an organic semiconductor layer is formed of a low molecular organic semiconductor material.
  • FIG. 5 is a top view of an organic transistor when an organic semiconductor layer is formed of a polymer organic semiconductor material, and schematically shows a charge transfer path between a source electrode and a drain electrode.
  • FIG. 6 is a diagram illustrating the case where the source electrode side surface and the drain electrode side surface are covered with an organic monomolecular film in the organic transistor of the first embodiment.
  • FIG. 7 is a cross-sectional view schematically showing a configuration of an organic transistor according to a second embodiment of the present invention viewed from a cross-sectional direction.
  • FIG. 8 is a diagram illustrating a method for manufacturing the organic transistor shown in FIG.
  • FIG. 9 is a diagram for explaining a manufacturing process of a conventional organic transistor.
  • FIG. 10 is a top view of an organic semiconductor layer 126 formed by applying a solvent on source / drain electrodes in a conventional organic transistor manufacturing process!
  • FIG. 11 is a schematic cross-sectional view in the case where an organic semiconductor layer has a crystal structure in a conventional organic transistor.
  • FIG. 1 is a cross-sectional view schematically showing a configuration of the organic transistor 10 according to the first embodiment of the present invention viewed from the cross-sectional direction, and a partially enlarged view of the organic monomolecular film 24.
  • FIG. 1 the relative magnitude relations of some components that clearly slide the structural characteristics of the organic transistor 10 are illustrated accurately!
  • An organic transistor 10 shown in FIG. 1 includes a substrate 12, a gate electrode 14 formed in a pattern on the substrate 12, and a gate insulating layer 16 formed on the substrate 12 so as to cover the gate electrode 14.
  • An organic semiconductor covering the source electrode 18 and the drain electrode 20 formed in a pattern on the gate insulating layer 16 and at least a part of the source electrode 18 and the drain electrode 20 This is an organic transistor having a so-called bottom-gate structure including the layer 22 and the organic monomolecular film 24.
  • the substrate 12 can be made of various materials such as plastic sheets such as polyethylene naphthalate (PEN), polyimide (PI), polyethylene terephthalate (PET), and glass.
  • plastic sheets such as polyethylene naphthalate (PEN), polyimide (PI), polyethylene terephthalate (PET), and glass.
  • the gate electrode 14 can be composed of a conductive material such as gold, silver, or copper, or a transparent conductive material such as ITO. By applying a control voltage to the gate electrode 14, the current flowing between the source electrode 18 and the drain electrode 20 can be controlled.
  • the gate insulating layer 16 is a layer in which the gate electrode 14 is embedded, and can be composed of a polyimide polymer material or a glass resin.
  • the source electrode 18 and the drain electrode 20 are electrodes that protrude from the upper surface of the gate insulating layer 16.
  • the surface opposite to the substrate 12 of the source electrode 18 is referred to as the source electrode upper surface 18a, and the end surface of the source electrode 18a in the width direction (left and right direction in FIG. 1) and the length direction (perpendicular direction in FIG. 1) are the sources. This is referred to as electrode side surface 18b.
  • the surface of the drain electrode 20 opposite to the substrate 12 is referred to as the drain electrode upper surface 20a, and the end surface of the drain electrode 20a in the width direction (left and right direction in FIG. 1) and the length direction (perpendicular direction in FIG. 1) are This is referred to as the drain electrode side surface 20b.
  • the source electrode 18 and the drain electrode 20 are disposed to face each other across the region of the organic semiconductor layer 22 above the gate electrode 14.
  • the source electrode 18 and the drain electrode 20 are formed according to a manufacturing method described later with reference to FIG.
  • the organic semiconductor layer 22 is a layer formed on the source electrode 18 and the drain electrode 20, and is made of an organic semiconductor material having semiconductor characteristics that conducts holes or electrons as carriers.
  • the organic semiconductor material include low-molecular organic compounds such as pentacene or naphthacene, and high-molecular organic compounds such as polythiophene and polyphenylene vinylene, but are not limited to these materials.
  • the organic monomolecular film 24 is a substantially uniform thin film having water repellency, and is referred to as a self-assembled monolayer (hereinafter referred to as SAM). As shown in FIG. 1 and enlarged on the right side, the organic monomolecular film 24 is a film in which only one molecule is arranged in the thickness direction and organic molecules 23 are arranged in the width direction, so that the film thickness is extremely thin. Organic single molecule Each of the organic molecules 23 constituting the film 24 has a bonding group 24a that selectively adsorbs to the source electrode 18 and the drain electrode 20 at one end, and a water-repellent end group 24b at the other end.
  • SAM self-assembled monolayer
  • the organic molecules 23 are regularly arranged in a state where the water-repellent end groups 24b are densely packed on the uppermost surface by chemically adsorbing the bonding groups 24a of the organic molecules 23 to the source electrode 18 or the drain electrode 20.
  • the bonding group 24b can be variously selected in accordance with the material of the source electrode 18 and the drain electrode 20.
  • the source electrode 18 and the drain electrode 20 are made of a metal such as gold, silver, or copper.
  • a thiol group (SH) or a disulfide group (SS) is preferably used as the bonding group 24b.
  • the water-repellent terminal group 24b includes methyl group (CH 3), fluorine
  • Nitrogen (F) is preferably used.
  • the organic molecule 23 is preferably linear.
  • FIG. 2 is a diagram illustrating a method for manufacturing the organic transistor 10 shown in FIG. Note that the process from forming the gate line 14 on the substrate 12 and forming the gate insulating layer 16 on the gate line 14 is the same as the known process, and therefore the description thereof is omitted here and the gate insulating layer 16 is formed. We will start with the later steps.
  • a metal layer 26 having a uniform thickness is formed on substantially the entire surface of the gate insulating layer 16 (electrode material layer forming step).
  • the metal layer 26 is formed, for example, by applying nano ink containing metal nanoparticles by spin coating or bar coating. In this way, a flat metal layer 26 without irregularities is formed, and this is advantageous in the subsequent pattern film forming process. Details will be described later with reference to FIG.
  • the spin coating method is a method in which a coating material is dropped on a coating object placed on a disk, and the coating material is spread uniformly over the entire surface by centrifugal force.
  • the gap between the bar (not shown) and the object to be coated is adjusted, and the coating material is moved by running the coating object in a state where the coating material is formed by the dropped coating material. It is a method of applying with a constant thickness.
  • Metal nanoparticles are ultrafine metal particles with a particle size of about lnm to lOOnm! /
  • pattern film forming step the region where the source electrode 18 and the drain electrode 20 should be formed.
  • An organic monomolecular film 24 having a pattern covering only the region is formed on the metal layer 26 (pattern film forming step). The details of this pattern film forming step will be described later with reference to FIG.
  • the exposed metal layer 26 in the void 25 of the organic monomolecular film 24 (that is, the metal layer in a region not protected by the organic monomolecular film 24) 26) is removed by wet etching (source and drain electrode forming step).
  • wet etching source and drain electrode forming step.
  • the uppermost surface of the organic monomolecular film 24 has water repellency, it functions as a resist layer during wet etching. Therefore, only the metal layer 26 in the void portion 25 is removed, and the source electrode 18 and the drain electrode 20 whose upper surfaces are covered with the organic monomolecular film 24 are formed.
  • an organic semiconductor layer 22 is formed on the source electrode 18 and the drain electrode 20 whose upper surfaces are covered with the organic monomolecular film 24 (organic semiconductor layer forming step). ).
  • the material and method for forming the organic semiconductor layer 22 are not limited in any way! /, 1S
  • the organic semiconductor layer 22 is formed by vacuum evaporation. Can be formed.
  • the above organic semiconductor material is dissolved in an organic solvent such as chloroform, dichlorobenzene, toluene, xylene, etc., and the solvent is used for inkjet or screen printing.
  • the organic semiconductor layer 22 can be formed by applying with an apparatus.
  • the manufacturing process can be reduced, the manufacturing cost and the working time can be reduced, and the organic transistor 10 can be easily manufactured. That is, in the conventional manufacturing method, a resist layer is laminated for patterning the source electrode 18 and the drain electrode 20, and after patterning, the resist layer is peeled off, and then the organic semiconductor layer 22 is formed. On the other hand, according to the manufacturing method of the present embodiment, the organic semiconductor layer 22 is formed as it is without peeling off the organic monomolecular film 24 functioning as a resist layer. This reduces the number of processes and reduces manufacturing costs and work time.
  • FIG. 3 is a diagram showing a pattern film forming process.
  • a polymer stamp 28 having a convex portion corresponding to the formation region of the single molecular film 24 is prepared.
  • This polymer stamp 28 is obtained by applying liquid PDMS (Polydimethylsiloxane) to a master disk made by finely processing silicon or the like using electron beam lithography or photolithography, and then applying the solid PDMS to the master disk. Made by peeling from
  • liquid PDMS Polydimethylsiloxane
  • a solution 29 containing organic molecules 23 (see Fig. 1) is applied to the convex portions 28a of the prepared polymer stamp 28, and the convex portions are pressed against the metal layer 26 (see Fig. 3 (b)). .
  • the organic molecules 23 are transferred to the metal layer 26, and the organic molecules 23 self-organize to form the organic monomolecular film 24 (see FIG. 3 (c)).
  • the organic monomolecular film 24 having a very fine structure (pattern) can be formed easily and with high accuracy by pressing the convex portion against the electrode material layer.
  • the metal layer 26 is formed by applying nano ink by spin coating or bar coating, so that the surface is extremely flat. Therefore, the entire surface of the convex portion 28a can be brought into close contact with the metal layer 26, and the organic monomolecular film 24 having a pattern accurately corresponding to the shape of the convex portion 28a can be formed. As a result, even the high-definition source electrode 18 and drain electrode 20 (see FIG. 3) can be easily and accurately formed.
  • FIG. 4 is a cross-sectional view showing the organic transistor 10 in the case where the organic semiconductor layer 22 is composed of a set of crystal grains 22a.
  • the organic semiconductor layer 22 is composed of a set of crystal grains 22a.
  • crystal grains is a term that means single crystal grains in which atoms are arranged in the same direction.
  • FIG. 4 shows only a part of the crystal grains 22 a constituting the organic semiconductor layer 22. Further, the crystal grains 22a illustrated in FIG. 4 are schematic, and the size and shape are not necessarily illustrated accurately.
  • the organic monomolecular film 24 is interposed, so that the surface area is larger than when the organic monomolecular film 24 is not interposed.
  • the difference in energy is suppressed.
  • the crystal grains 22a grow greatly. Therefore, a current flows efficiently through the organic semiconductor layer 22, and high transistor performance can be obtained.
  • FIG. 5 is a view of the organic transistor 10 as viewed from above, and is a diagram schematically showing the carrier movement path between the source electrode 18 and the drain electrode 20 with arrows.
  • the organic semiconductor layer 22 is formed of a polymer organic semiconductor material such as polythiophene
  • the organic semiconductor layer 22 can be formed by applying the organic semiconductor material in a solvent with a solvent.
  • the organic monomolecular film 24 functions as a solvent fixing agent, and the applied solvent bleeds. (Spread) is suppressed. That is, expansion of the organic semiconductor layer 22 formed on the source electrode 18 and the drain electrode 20 is suppressed. Therefore, as shown in FIG. 5, since the carrier moves the shortest distance in the source electrode 18 and the drain electrode 20, high transistor performance can be obtained.
  • the organic transistor 10 of the first embodiment there is an organic monomolecule between the source electrode side surface 18b and the organic semiconductor layer 22 and between the drain electrode side surface 20b and the organic semiconductor layer 22. Since the film 24 is not interposed, current flows efficiently and high transistor performance is obtained.
  • FIG. 6 is a cross-sectional view showing the case where the source electrode side surface 18 b and the drain electrode side surface 20 b are covered with the organic monomolecular film 24 in the organic transistor 10.
  • the organic monomolecular film 24 is essentially an insulator, its thickness is extremely thin, so that the entire surface of the source electrode 18 and the drain electrode 20 is covered with the organic monomolecular film 24 as shown in FIG. However, current flows due to the tunnel effect.
  • the organic transistor 10 when a control voltage is applied to the gate electrode 14, carriers are collected through the gate insulating layer 16, and therefore, the source electrode side surface 18 b and the drain adjacent to the gate insulating layer 16 are collected. Current flows most easily between the electrode side surface 20b. Therefore, as shown in FIG. 6, when the source electrode side surface 18b and the drain electrode side surface 20b are covered with the organic semi-monomolecule 24, the current flow is greatly inhibited.
  • the organic transistor 10 of the first embodiment between the source electrode side surface 18b and the organic semiconductor layer 22, and between the drain electrode side surface 20b and the organic semiconductor layer 22, Since the organic monomolecular film 24 is not interposed, current flows efficiently and high transistor performance can be obtained.
  • FIG. 7 is a cross-sectional view schematically showing a configuration of the organic transistor 50 according to the second embodiment of the present invention viewed from the cross-sectional direction.
  • the organic transistor 10 according to the first embodiment described with reference to FIG. 1 includes a so-called bottom gate in which a gate electrode 14 and a gate insulating layer 16 are provided on the substrate 12 side (lower side) of the organic semiconductor layer 22.
  • the force of the transistor having the structure has a so-called gate electrode 54 and gate insulating layer 56 provided above the organic semiconductor layer 62. It is a transistor with a top gate structure.
  • Each member of the organic transistor 50 of the second embodiment can be made of the same material as each member having the same name in the organic transistor 10 of the first embodiment. The detailed description of is omitted.
  • the organic transistor 50 of the second embodiment includes a substrate 52, a source electrode 58 and a drain electrode 60 formed on the substrate 52, and the source electrode 58 and the drain electrode 60.
  • the organic transistor 10 of the first embodiment (see FIG. 1) has a source electrode 18 and a drain electrode 20 protruding on the gate insulating layer 16, whereas the organic transistor 50 of the second embodiment A source electrode 58 and a drain electrode 60 are projected on the substrate 52.
  • the surface of the source electrode 58 opposite to the substrate 52 is referred to as the source electrode upper surface 58a, and the end surface and the length direction of the source electrode 58a in the width direction (left and right direction in FIG. 7).
  • the end face in the direction (perpendicular to FIG. 7) is referred to as a source electrode side face 58b.
  • the surface of the drain electrode 60 opposite to the substrate 52 is referred to as the drain electrode upper surface 60a.
  • the drain electrode 60a has an end surface in the width direction (left and right direction in FIG. 7) and an end surface in the length direction (vertical direction in FIG. 7). This is referred to as electrode side surface 60b.
  • the source electrode 58 and the drain electrode 60 are formed according to a manufacturing method described later with reference to FIG.
  • An organic monomolecular film 64 is interposed between the source electrode side surface 58b and the organic semiconductor layer 62, and between the drain electrode side surface 60b and the organic semiconductor layer 62. No 64 is present.
  • FIG. 8 is a diagram illustrating a method for manufacturing the organic transistor 50 of the second embodiment shown in FIG.
  • a metal layer 26 having a uniform thickness is formed on substantially the entire surface of the substrate 52 (electrode material layer forming step).
  • the metal layer 26 is formed, for example, by applying nano ink by spin coating or bar coating.
  • an organic monomolecular film 64 having a pattern shape covering only the region where the source electrode 18 and the drain electrode 20 are to be formed is formed on the metal layer 26 (see FIG. 8B).
  • Pattern film formation process the organic monomolecular film 64 is formed by, for example, the force that can be formed using the polymer stamp 28 (see FIG. 3), as in the first embodiment. You may do it.
  • the exposed metal layer 26 in the void 65 of the organic monomolecular film 64 (that is, the metal layer in a region not protected by the organic monomolecular film 24). 26) is removed by wet etching (source and drain electrode forming step).
  • wet etching source and drain electrode forming step.
  • the uppermost surface of the organic monomolecular film 24 has water repellency, it functions as a resist layer during wet etching. Therefore, only the metal layer 26 in the gap 65 is removed, and the source electrode 58 and the drain electrode 60 whose upper surfaces are covered with the organic monomolecular film 64 are formed.
  • an organic semiconductor layer 62 is formed on the source electrode 58 and the drain electrode 60 whose upper surfaces are covered with the organic monomolecular film 64 (organic semiconductor layer forming step). ). Since the method of forming the organic semiconductor layer 22 is the same as that in the first embodiment, a detailed description is omitted.
  • a gate insulating layer 56 is formed on the organic semiconductor layer 62, and a gate electrode 54 is formed thereon.
  • the organic transistor 50 of the second embodiment Manufactured. Note that the process of forming the gate insulating layer 56 and the gate electrode 54 is the same as a known process, and thus description thereof is omitted.
  • the manufacturing method of the organic transistor 50 of the second embodiment the same effect as the manufacturing method of the organic transistor 10 of the first embodiment can be obtained. That is, the manufacturing process can be reduced, the manufacturing cost and working time can be reduced, and the organic transistor 50 can be easily manufactured with the force S.
  • the organic monomolecular film 64 is interposed between the source electrode upper surface 58a, the drain electrode upper surface 60a, and the organic semiconductor layer 62, and the source electrode side surface 58b Since the organic monomolecular film 64 is not interposed between the drain electrode side surface 60b and the organic semiconductor layer 62, the current efficiently flows through the organic semiconductor layer 62 as in the organic transistor 10 of the first embodiment. , High! / Transistor performance.
  • the electrode material layer (metal layer 26) is formed by evaporating the force electrode material described as being formed by spin coating or bar coating.
  • the electrode material layer may be formed by other methods such as vapor deposition method that adheres to the surface of the material, sputtering, chemical vapor deposition method (CVD method) in which a layer is deposited by a chemical reaction in the gas phase, and a plating method.
  • the crystal grains 22a are formed when a low-molecular organic semiconductor material such as pentacene or naphthacene is used. Therefore, the case where the crystal grains 22a are formed is not excluded.

Abstract

L'invention concerne un transistor organique, qui peut avoir de bonnes caractéristiques et peut être facilement fabriqué, ainsi qu'un procédé de fabrication du transistor organique. Le transistor organique (10) a une face supérieure d'électrode de source (18a) et une face supérieure d'électrode de drain (20a) recouvertes par une couche (24) monomoléculaire organique, de telle sorte que des grains de cristal (22a) peuvent se développer pour être plus grands sur une électrode de source (18) et une électrode de drain (20) que ceux du boîtier, dans lequel les faces supérieures des électrodes ne sont pas recouvertes par la couche (24) monomoléculaire organique. Il en résulte qu'un courant électrique circule de façon efficace à travers une couche (22) semi-conductrice organique, de telle sorte que de bonnes caractéristiques de transistor peuvent être obtenues.
PCT/JP2007/067418 2006-09-13 2007-09-06 Transistor organique, et procédé de fabrication d'un transistor organique WO2008032637A1 (fr)

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JP2010093093A (ja) * 2008-10-09 2010-04-22 Hitachi Ltd 半導体装置およびその製造方法
JP5866783B2 (ja) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 回路基板の製造方法
JP5807374B2 (ja) * 2011-04-28 2015-11-10 大日本印刷株式会社 薄膜トランジスタ基板の製造方法およびトップゲート構造薄膜トランジスタ基板

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JP2005093542A (ja) * 2003-09-12 2005-04-07 Hitachi Ltd 半導体装置およびその作製方法
JP2006148131A (ja) * 2004-11-23 2006-06-08 Samsung Sdi Co Ltd 有機薄膜トランジスタ、その製造方法、及びその有機薄膜トランジスタを含む平板表示装置
JP2007180131A (ja) * 2005-12-27 2007-07-12 Matsushita Electric Ind Co Ltd 有機ｆｅｔおよびその製造方法

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JP2005093542A (ja) * 2003-09-12 2005-04-07 Hitachi Ltd 半導体装置およびその作製方法
JP2006148131A (ja) * 2004-11-23 2006-06-08 Samsung Sdi Co Ltd 有機薄膜トランジスタ、その製造方法、及びその有機薄膜トランジスタを含む平板表示装置
JP2007180131A (ja) * 2005-12-27 2007-07-12 Matsushita Electric Ind Co Ltd 有機ｆｅｔおよびその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104849336A (zh) * 2015-04-22 2015-08-19 电子科技大学 有机场效应晶体管气体传感器及其制备方法
CN104849336B (zh) * 2015-04-22 2018-01-19 电子科技大学 有机场效应晶体管气体传感器及其制备方法

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