WO2008031320A1 - Bobine de couplage inductif et appareil au plasma à couplage inductif correspondant - Google Patents

Bobine de couplage inductif et appareil au plasma à couplage inductif correspondant Download PDF

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Publication number
WO2008031320A1
WO2008031320A1 PCT/CN2007/002450 CN2007002450W WO2008031320A1 WO 2008031320 A1 WO2008031320 A1 WO 2008031320A1 CN 2007002450 W CN2007002450 W CN 2007002450W WO 2008031320 A1 WO2008031320 A1 WO 2008031320A1
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WIPO (PCT)
Prior art keywords
inductive coupling
coupling coil
independent
inductively coupled
branches
Prior art date
Application number
PCT/CN2007/002450
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English (en)
French (fr)
Inventor
Qiaoli Song
Jianhui Nan
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Beijing Nmc Co., Ltd.
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Application filed by Beijing Nmc Co., Ltd. filed Critical Beijing Nmc Co., Ltd.
Publication of WO2008031320A1 publication Critical patent/WO2008031320A1/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
    • H01F21/04—Variable inductances or transformers of the signal type continuously variable, e.g. variometers by relative movement of turns or parts of windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F38/00—Adaptations of transformers or inductances for specific applications or functions
    • H01F38/14—Inductive couplings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/02—Fixed inductances of the signal type  without magnetic core

Definitions

  • the present invention relates to an accessory for a semiconductor wafer processing apparatus, and more particularly to an inductive coupling coil and a plasma apparatus using the same. Background technique
  • Plasma devices are widely used in the fabrication of devices for IC (Integrated Circuit) or MEMS (Micro Electro Mechanical Systems) devices.
  • ICP Inductively Coupled Plasma Device
  • the reaction gas is excited by RF power to generate ionization to form a plasma.
  • the plasma contains a large amount of active particles such as electrons, ions, excited atoms, molecules and radicals. These active particles and etched substances Various physical and chemical reactions occur on the surface and form volatile products, which can change the surface properties of the material.
  • the inductively coupled plasma device shown in Figure 1 is the structure employed in most current semiconductor etching equipment.
  • the process gas entering the reaction chamber 3 from the air inlet 2 in the center of the dielectric window 1 is ionized by the upper inductive coupling coil 4 to form a plasma, and the generated plasma etches the material of the surface of the wafer 5.
  • the molecular pump withdraws the gas from the reaction chamber 3 and discharges the gas from the reaction chamber 3.
  • the RF power that causes the gas to ionize to form a plasma comes from the inductive coupling coil 4.
  • the current excitation method applied to the inductive coupling coil 4 is to add a 13.56 MHz radio frequency, so that the inductive coupling coil 4 has an RF current to generate a varying magnetic field.
  • the varying magnetic field induces an electric field, thereby ionizing the reaction gas into a plasma in the reaction chamber 3.
  • the excited plasma interacts with the workpiece within the chamber 3, etching the workpiece or depositing material on the workpiece.
  • the workpiece is generally a semiconductor with a circular plane Wafer. Due to the pumping mode or the asymmetry of the reaction chamber 3, asymmetry in particle density, temperature and flux in the reaction chamber 3 is usually caused.
  • the asymmetry of the gas flow causes an asymmetry of the plasma conductivity, and the asymmetry of the plasma conductivity leads to uneven deposition of power, which causes the ionization ionization unevenness.
  • the volume of the reaction chamber 3 also increases correspondingly, and the edge and center plasma density distribution unevenness is more pronounced. Therefore, most of the etching apparatuses currently have a problem of uneven etching rate, which has a great adverse effect on the semiconductor manufacturing process.
  • the conventional inductive coupling coil 4 has a planar spiral structure, and the plasma excited is very uneven. Since the inductive coupling coil has a strong electromagnetic field excited in the central portion of the reaction chamber, the plasma density generated in the center is high, and diffusion can be used to compensate for the low peripheral density region, which causes dependence on gas pressure. Very large, only in the range of ⁇ -lOmTorr (to) can have the best performance. This makes the process's adjustable window very small and imposes significant limitations on the semiconductor manufacturing process. When the plasma density distribution is uneven, the etch depth on the wafer or the deposition thickness of the material on the wafer is not uniform, which will reduce the yield of the device. In particular, when the size of the wafer is increased from 100 mm to 300 mm, the volume of the reaction chamber is correspondingly increased, and it is unrealistic to rely on diffusion to make the plasma density uniform.
  • the diameter of the wafer reaches 300 mm, it is necessary to correspondingly increase the size of the inductive coupling coil and increase the volume of the plasma chamber for processing the wafer, thus requiring the thickness of the dielectric window 1 to be correspondingly increased. Otherwise, the dielectric window 1 will be difficult to withstand the pressure difference between the extra-atmospheric pressure outside the chamber and the vacuum in the chamber.
  • the thickened dielectric window 1 reduces the coupling efficiency of the energy because the RF field does not have sufficient flux density to excite the plasma after penetrating the thick dielectric window 1.
  • the length of this conventional inductively coupled coil is also Increase, close to or exceed one-eighth of the wavelength of the RF excitation source.
  • the present invention is directed to solving the above technical problems in the prior art, and provides an inductive coupling coil and a plasma device using the same.
  • the inductive coupling coil which is the core of the present invention, since the turns are formed by a plurality of branches and each branch is organically combined by the planar portion and the solid portion, the plasma is uniformly distributed over the wafer in the reaction chamber, so that the wafer surface The difference in the rate of occurrence of the chemical reaction is small, and the etching rate is uniform, thereby improving the etching quality of the wafer.
  • the plasma device using the inductive coupling coil has the characteristics of uniform plasma distribution, uniform etching rate and high etching quality.
  • the present invention provides an inductively coupled coil consisting of a plurality of identically-arranged individual branches nested coaxially with respect to an axis.
  • each of the independent branches includes a solid portion and a planar portion, the solid portion extending in an axial direction; the planar portion extending circumferentially along a plane perpendicular to the axis; a bottom end portion of the solid portion and a planar portion Internal endpoints are smoothly connected.
  • the planar portion of each of the independent branches extends in a spiral shape, preferably, the planar portion of each of the independent branches is an Archimedes spiral or an involute or a vortex line The form extends all around.
  • each of the independent branches is spirally raised along the axis.
  • the solid portion of each of the individual branches has the same diameter or a smaller diameter or a larger diameter in the ascending direction.
  • the independent branch has n (n is an integer greater than or equal to 2).
  • the present invention further provides an inductively coupled plasma device using the above inductive coupling coil, comprising a reaction chamber, a dielectric window is disposed on an upper portion of the reaction chamber, and an upper portion of the dielectric window is disposed There is an inductive coupling coil, and the inductive coupling coil is connected to the RF power source through a radio frequency matcher.
  • the plurality of independent branches of the inductive coupling coil are connected in parallel with each other and connected to the radio frequency matching device.
  • each independent branch of the inductive coupling coil is respectively connected to the radio frequency matching device.
  • each independent branch of the inductive coupling coil is connected in parallel, and the input terminal connected in parallel is connected in series with a variable capacitor, and the output end is grounded through a grounding capacitor.
  • each of the independent branches of the inductive coupling coil is respectively connected in series with variable capacitors, and then connected in parallel, and the output ends are grounded through a grounding capacitor.
  • each branch of the inductively coupled coil provided by the present invention is a combination of a planar portion and a solid portion, and the solid portion is located in the middle, the structure makes the inductive coupling coil react
  • the electric field generated in the middle of the chamber is smaller than the electric field generated at the corresponding position of the planar portion of the inductive coupling coil at the corresponding position in the chamber, thus solving the defects of the aforementioned prior art inductive coupling coil, thereby making the plasma at the center and the edge of the chamber The distribution is more uniform.
  • the inductance of the inductive coupling coil is reduced, so that a large area of plasma can be easily obtained. Uniformity of plasma in a large area process.
  • the inductively coupled coil structure symmetrical the electromagnetic field distribution in the reaction chamber, which further makes the distribution of the plasma more uniform at the center and the edge. The uniform distribution of the plasma in the reaction chamber will result in a small difference in the rate of chemical reaction on the surface of the material to be etched, and the etching rate is uniform, thereby improving the etching quality of the wafer.
  • the plasma device using the inductively coupled coil provided by the present invention also has the characteristics of uniform plasma distribution in the reaction chamber, small difference in speed of chemical reaction on the surface of the material to be etched, and etch rate hooking.
  • the etching process such as etching using such a plasma device can improve the etching quality of the wafer.
  • FIG. 1 is a schematic structural view of a prior art inductively coupled plasma device
  • FIG. 2 is a schematic structural view of a prior art inductive coupling coil
  • FIG. 3 is a perspective view of a first embodiment of an inductive coupling coil of the present invention
  • FIG. 4 is a plan view showing a first embodiment of the inductive coupling coil of the present invention
  • FIG. 6 is a perspective view showing a second embodiment of the inductive coupling coil of the present invention
  • FIG. 7 is a schematic structural view of the second embodiment of the inductive coupling coil of the present invention
  • FIG. 9 is a schematic structural view of a first embodiment of the inductively coupled plasma device of the present invention
  • FIG. 10 is a second schematic view of the inductively coupled plasma device of the present invention
  • FIG. 11 is a schematic structural view of a third embodiment of the inductively coupled plasma device of the present invention.
  • the inductive coupling coil provided by the present invention is composed of a plurality of independent branches having the same structure, and the plurality of independent branch coaxial lines are symmetrically arranged with respect to the axis.
  • the following will be combined with Figure 3 to Figure 8. Detailed description of the line.
  • the inductive coupling coil of the first embodiment of the present invention is composed of two independent branches of the same structure, two independent branch coaxial lines, and symmetrically arranged with respect to the axis.
  • Each individual branch includes a solid portion 10 and a planar portion 11.
  • the three-dimensional portion 10 extends in the axial direction, and specifically, the three-dimensional portion 10 can be spirally raised along the axis.
  • the diameters of the spirals may be the same or different, for example, the diameter may be gradually smaller in the rising direction or the diameter may be gradually increased in the rising direction.
  • the pitch of the ascending spirals is not limited, and may be equally spaced; or may be unequal pitches, such as pitches becoming larger or smaller.
  • the planar portion 11 extends circumferentially along a plane perpendicular to the axis.
  • the planar portion 11 may be a helix, such as an Archimedes spiral or an involute or a vortex line, or may be other that can extend to the periphery. Line type.
  • the inner end of the flat portion 11 is smoothly connected to the bottom end of the solid portion 10.
  • the structural principle of the inductive coupling coil of the second embodiment of the present invention is the same as that of the first embodiment, and the difference between the two is that the inductive coupling coil in the first embodiment is Two independent branches of the same structure are nested, and the inductive coupling coil of the second embodiment is composed of three independent branches of the same structure.
  • the number of independent branches included in the inductive coupling coil provided by the present invention is not limited to two or three described in the above embodiments, but may theoretically be n, where n is greater than Any integer equal to 2. In fact, as long as n satisfies the aforementioned relationship and constitutes n independent branch coaxial lines of the aforementioned inductive coupling coil and is symmetrically arranged with respect to the axis.
  • the present invention also provides an inductively coupled plasma device using the above inductive coupling coil, which will be described in detail below with reference to Figs. 9, 10 and 11.
  • the inductively coupled plasma device comprises a reaction chamber 3, a chuck 9 for placing the wafer 5 is disposed in the reaction chamber 3, and a dielectric portion is disposed on the upper portion of the reaction chamber 3.
  • the middle portion of the dielectric window 1 is provided with an air inlet 2 through which the gas introduction device 8 introduces a process gas into the reaction chamber 3.
  • the upper part of the dielectric window 1 is provided with an inductive coupling coil 4, and the inductive coupling
  • the input of the coil 4 is connected to an RF (radio frequency) source 7 via a matcher (i.e., a radio frequency matcher) 12, and the output of the inductive coupling coil 4 is grounded through a ground capacitor CO.
  • An induced electric field is generated in the reaction chamber 3, and the gas entering the reaction chamber 3 is excited into a plasma, thereby etching the wafer 5 and the like.
  • a plurality of independent branches of the inductive coupling coil 4 are connected in parallel with each other, and the input terminals of the plurality of independent branches can be connected in series with the variable capacitor C1, and the impedance of each independent branch can be changed by changing the size of the variable capacitor C1.
  • the grounding capacitor CO determines the position of the maximum and minimum current and voltage on the coil, so the current and voltage on each individual branch are adjustable.
  • the plasma density distribution can be adjusted by adjusting the current ratio on each branch to further control plasma uniformity.
  • a plurality of independent branches of the inductive coupling coil 4 are connected in parallel with each other, and then connected to an RF (Radio Frequency) source 7 through a matcher 12. .
  • a plurality of independent branches of the inductive coupling coil 4 are connected in parallel with each other, and a variable capacitor C1 is connected in series at the input end, and then matched.
  • the device 12 is connected to an RF (Radio Frequency) source 7.
  • each of the independent branches of the inductive coupling coil 4 is connected in parallel with each other in series with the variable capacitor C1 at the input end, and then passes through the matching unit 12 and RF (radio frequency) source 7 connection.
  • each branch of the inductively coupled coil provided by the present invention is a combination of a planar portion and a solid portion, and the solid portion is located in the middle, the structure is such that the inductive coupling coil is generated in the middle of the reaction chamber.
  • the electric field is smaller than the electric field generated at the corresponding position of the planar portion of the inductive coupling coil at the corresponding position in the chamber, thus solving the defects of the aforementioned prior art inductive coupling coil, thereby making the distribution of the plasma more uniform at the center and the edge of the chamber.
  • the inductively coupled coil is reduced, so that a large area of plasma can be easily obtained, improving plasma uniformity in a large area process.
  • the inductively coupled coil structure symmetrical the electromagnetic field distribution in the reaction chamber, which further makes the distribution of the plasma more uniform at the center and the edge.
  • the uniform distribution of the plasma in the reaction chamber will result in a small difference in the rate of chemical reaction on the surface of the material to be etched, and the etching rate is uniform, thereby improving the etching quality of the wafer.
  • the plasma device using the inductive coupling coil provided by the invention also has the characteristics that the plasma distribution in the reaction chamber is uniform, the difference in the speed of chemical reaction on the surface of the etched material is small, and the etching rate is uniform.
  • the etching process such as etching using such a plasma device can improve the etching quality of the wafer.
  • the RF (Radio Frequency) source used in the present invention may be one or more, and a plurality of independent branches may also be separately connected to the RF (Radio Frequency) source 7 through the matcher 12, respectively.
  • the inductive coupling coil and the plasma device using the same are mainly used for semiconductor wafer processing equipment, but are not limited thereto, and are also applicable to other devices.

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Description

电感耦合线圈及采用该电感耦合线圈的等离子体装置 技术领域
本发明涉及一种半导体晶片加工设备用配件， 尤其涉及一种电感耦合 线圈及采用该电感耦合线圈的等离子体装置。 背景技术
目前， 随着电子技术的高速发展， 人们对集成电路的集成度要求越来 越高， 这就要求生产集成电路的企业不断地提高半导体晶片的加工能力。 等离子体装置广泛地应用于制造 IC (集成电路）或 MEMS (微电子机械系 统）器件的制造工艺中。 其中 ICP (电感耦合等离子体装置）被广泛应用于 刻蚀等工艺中。 在低压下, 反应气体在射频功率的激发下 , 产生电离形成 等离子体， 等离子体中含有大量的电子、 离子、 激发态的原子、 分子和自 由基等活性粒子， 这些活性粒子和被刻蚀物质表面发生各种物理和化学反 应并形成挥发性的生成物 , 从而使材料表面性能发生变化。
图 1 所示的电感耦合等离子体装置是目前大多数半导体刻蚀设备所采 用的结构。 在半导体加工过程中， 从介电窗 1 中央的进气口 2进入反应腔 室 3的工艺气体被上方的电感耦合线圈 4电离形成等离子体， 生成的等离 子体刻蚀晶片 5表面的材质。 系统中分子泵从出气口 6抽出反应腔室 3的 气体排出。 在这一过程中， 使气体产生电离形成等离子体的射频功率来自 于电感耦合线圈 4。目前施加在电感耦合线圈 4上的激励方式是加 13.56MHz 射频， 使得电感耦合线圈 4 内有射频电流从而会产生变化的磁场。 根据法 拉第电磁感应定律， 该变化的磁场会感应出电场， 从而在反应腔室 3 内将 反应气体电离成等离子体。 被激发的等离子体在腔室 3内与工件相互作用， 对工件进行刻蚀或在工件上沉积材料。 工件一般是具有圆形平面的半导体 晶片。 由于抽气方式或者反应腔室 3的不对称， 通常会引起反应腔室 3 内 粒子密度、 温度和通量的不对称。 气流的不对称会引起等离子体传导率的 不对称， 而等离子体传导率的不对称会导致功率沉积的不均勾， 从而引起 电子碰撞电离的不均匀。 随着晶片 5尺寸的增加， 反应腔室 3的体积也相 应地增大， 边缘和中心等离子体密度分布不均匀性更明显。 因此， 目前大 多数的刻蚀设备都存在着刻蚀速率不均匀的问题， 这对半导体制造工艺造 成了很大的不利影响。
为了在被刻蚀物质表面得到比较均匀的刻蚀速率，就需要在反应腔室 3 内的晶片 5上方获得比较均匀的等离子体密度分布， 即， 使晶片 5上方获 得较为均匀的等离子体分布， 以提高刻蚀的质量。
如图 2所示， 目前常用的电感耦合线圈 4的结构为平面螺旋结构， 其 所激发的等离子体非常不均匀。 由于该电感耦合线圈在反应室中央部分所 激发的电磁场较强， 因此在中央所产生的等离子体密度较高， 只能依靠扩 散来弥补外围密度低的区域, 这就造成了对于气体压力的依赖性很大， 只 有在 Ι-lOmTorr (托） 的范围内应用才能有最好的性能。 这使得工艺的可调 窗口非常小， 对半导体制造工艺造成了很大的局限性。 当等离子体密度分 布不均勾时， 晶片上的刻蚀深度或者材料在晶片上的沉积厚度也就不均匀， 这将降低器件的良率。 特别是当晶片的尺寸从 100mm增加到 300mm时， 反应腔室的体积也相应地增大， 若仅依靠扩散使等离子体密度达到均匀将 很不现实。
另外， 当晶片的直径达到 300mm时， 就需要相应地增加电感耦合线圈 的尺寸， 以及增大用来加工晶片的等离子体腔室的体积， 这样就要求介电 窗 1的厚度必须相应地增加。 否则， 介电窗 1将难以承受腔体外大气压与 腔体内真空之间的压差。 然而， 加厚的介电窗 1 会降低能量的耦合效率， 这是因为射频场在穿透厚介电窗 1 后， 不具备足够的通量密度来激励等离 子体。 并且， 随着晶片直径的增大， 这种传统的电感耦合线圈的长度也显 著增加， 接近或者超过射频激励源的八分之一波长。 这样， 电感耦合线圈 上的传输线效应就会很明显， 会产生显著的电流和电压变化， 从而导致磁 通量密度在等离子体中明显变化， 产生非均匀性的等离子体密度， 从而造 成工件力 cr工不均匀。
另一方面， 当电感耦合线圈尺寸增加时， 其电感也会相应增加， 这样 电感耦合线圈两端的电压就会相应地增大。 大电压会引起电感耦合线圈和 等离子体间的容性耦合， 这样的容性耦合增加了离子的动能， 因此难以精 确控制处理， 这将会增加晶片的微负载效应， 降低器件的良率。 此外， 具 有较高动能的离子碰撞等离子体腔室的内壁会产生颗粒污染。 而且， 大电 感还会造成不稳定的阻抗匹配和低的耦合效率， 并相应地增大径向等离子 体密度的不均匀性。 发明内容
本发明旨在解决已有技术中的上述技术问题， 即提供一种电感耦合线 圈及采用该电感耦合线圈的等离子体装置。 在作为本发明核心的电感耦合 线圈中， 由于通过多个分支来构成线圏以及每个分支由平面部分和立体部 分有机组合， 从而使得等离子体在反应腔室内的晶片上方分布均匀， 使晶 片表面发生化学反应的速度差异较小， 并且刻蚀速率均匀， 从而提高了晶 片的刻蚀质量。 而采用该电感耦合线圏的等离子体装置同样具有等离子体 分布均匀、 刻蚀速率均勾以及刻蚀质量高等特点。
根据本发明的一个技术方案， 本发明提供一种电感耦合线圏， 其由多 个结构相同的独立分支嵌套构成， 所述多个独立分支同轴线， 且相对于轴 线对称布置。
其中， 所述的每个独立分支包括立体部分和平面部分， 所述立体部分 沿轴线方向延伸； 所述平面部分沿垂直于轴线的平面向四周延伸； 所述立 体部分的底部端点与平面部分的内部端点平滑连接。 其中， 所述的每个独立分支的平面部分以螺旋线的形式向四周延伸， 优选地， 所述的每个独立分支的平面部分以阿基米德螺旋线或渐开线或涡 状线的形式向四周延伸。
其中， 所述的每个独立分支的立体部分沿轴线螺旋上升。 所述的每个 独立分支的立体部分沿上升方向其螺旋线的直径相同或者直径渐小或者直 径渐大。
其中， 所述的独立分支有 n ( n取大于等于 2的整数）个。
根据本发明的另一个技术方案， 本发明还提供一种应用上述电感耦合 线圈的电感耦合等离子体装置， 包括反应室， 在反应室上部设有介电窗， 在所述介电窗的上部设有电感耦合线圈， 所述电感耦合线圈通过射频匹配 器与射频电源连接。
其中， 所述电感耦合线圈的多个独立分支相互并联连接后与所述射频 匹配器连接。
其中， 所述电感耦合线圈的每个独立分支分別与所述射频匹配器连接。 其中， 所述电感耦合线圈的每个独立分支并联连接， 并联后的输入端 串联可变电容， 输出端通过接地电容接地。
其中， 所述电感耦合线圈的每个独立分支的输入端分别串联可变电容， 之后并联连接， 输出端通过接地电容接地。
由本发明提供的上述技术方案可以看出， 由于本发明提供的电感耦合 线圈的每个分支都是平面部分和立体部分的结合， 并且立体部分位于中间， 因此， 这种结构使得电感耦合线圈在反应腔室中间产生的电场小于该电感 耦合线圈的平面部分在腔室内相应位置处所产生的电场， 这样便解决了前 述现有技术中电感耦合线圈的缺陷， 从而使得等离子体在腔室中心和边缘 的分布更加均匀。
此外， 在本发明中通过使结构基本相同的独立分支对称并联连接， 减 小了电感耦合线圈的电感， 从而可以很容易地获得大面积的等离子体， 改 善大面积工艺中等离子体的均匀性。 同时， 这种电感耦合线圈结构使反应 腔体中的电磁场分布对称， 这也进一步使得等离子体的分布在中心和边缘 更加均匀。 而等离子体在反应腔室内均匀分布将使得被刻蚀物质表面发生 化学反应的速度差异较小， 并且刻蚀速率均匀， 从而提高了晶片的刻蚀质 量。
另外， 采用本发明提供的电感耦合线圏的等离子体装置同样具有在反应 腔室内等离子体分布均匀、 在被刻蚀物质表面发生化学反应的速度差异小、 刻蚀速率均勾等特点， 因而， 采用这样的等离子体装置进行刻蚀等加工工 艺能够提高晶片的刻蚀质量。 附图说明
图 1为现有技术的电感耦合等离子体装置的结构示意图；
图 2为现有技术的电感耦合线圈结构示意图；
图 3为本发明的电感耦合线圈的第一实施例的立体结构示意图； 图 4为本发明的电感耦合线圈的第一实施例的平面结构示意图； 图 5为本发明的电感耦合线圈的第一实施例的立面结构示意图； 图 6为本发明的电感耦合线圈的第二实施例的立体结构示意图； 图 7为本发明的电感耦合线圈的第二实施例的立面结构示意图； 图 8为本发明的电感耦合线圈的第二实施例的平面结构示意图； 图 9为本发明的电感耦合等离子体装置的第一实施例的结构示意图； 图 10为本发明的电感耦合等离子体装置的第二实施例的结构示意图； 图 11为本发明的电感耦合等离子体装置的第三实施例的结构示意图。 具体实施方式
本发明提供的电感耦合线圈由多个结构相同的独立分支嵌套构成， 所 述多个独立分支同轴线， 且相对于轴线对称布置。 下面结合图 3至图 8进 行详细说明。
如图 3、 图 4和图 5所示， 本发明第一实施例的电感耦合线圈由两个结 构相同的独立分支嵌套构成， 两个独立分支同轴线， 且相对于轴线对称布 置。 每个独立分支包括立体部分 10和平面部分 11。
其中， 立体部分 10沿轴线方向延伸， 具体地讲， 立体部分 10可以沿 轴线螺旋上升。 螺旋线的直径可以相同， 也可不同， 例如可以沿上升的方 向直径渐小， 或者沿上升的方向直径渐大。 而且， 上升螺旋的间距也不受 局限， 可以为等间距； 也可以为不等间距， 比如间距渐大或渐小。
平面部分 11沿垂直于轴线的平面向四周延伸， 具体地讲， 平面部分 11 可以为螺旋线， 例如阿基米德螺旋线或渐开线或涡状线， 也可以为能够向 四周延伸的其它线型。 并且， 平面部分 11 的内部端点与立体部分 10的底 部端点平滑连接。
如图 6、 图 7和图 8所示， 本发明第二实施例的电感耦合线圈的结构原 理与第一实施例相同， 二者的不同之处在于： 第一实施例中的电感耦合线 圈由两个结构相同的独立分支嵌套构成， 而第二实施例中的电感耦合线圈 由三个结构相同的独立分支嵌套构成。
可以理解的是， 本发明提供的电感耦合线圈所包括的独立分支的数目 并不局限于上述实施例中所述的两个或者三个， 而是在理论上可以为 n个， 其中 n为大于等于 2的任何整数。 事实上， 只要 n满足前述关系并且构成 前述电感耦合线圈的 n个独立分支同轴线且相对于轴线对称布置即可。
本发明还提供了一种应用上述电感耦合线圈的电感耦合等离子体装置， 下面结合图 9、 图 10和图 11进行详细说明。
请同时参阅图 9、 图 10和图 11， 本发明提供的电感耦合等离子体装置 包括反应室 3 , 反应室 3中设有用来放置晶片 5的卡盘 9, 反应室 3的上部 设有介电窗 1， 介电窗 1的中部设有进气口 2, 气体引入装置 8通过进气口 2将工艺气体引入反应室 3。 介电窗 1的上部设有电感耦合线圈 4, 电感耦 合线圈 4的输入端通过匹配器（即， 射频匹配器） 12与 RF (射频）源 7连 接， 电感耦合线圈 4的输出端通过接地电容 CO接地。 反应室 3中产生感应 电场， 将进入反应室 3 内的气体激发成等离子体， 从而对晶片 5进行刻蚀 等加工。
在该装置中， 电感耦合线圈 4的多个独立分支之间相互并联， 并且多 个独立分支的输入端可以串联可变电容 C1 , 通过改变可变电容 C1 的大小 可以改变每个独立分支的阻抗， 而接地电容 CO决定线圈上电流和电压的最 大值和最小值的位置， 因此每个独立分支上的电流和电压都是可以调节的。 这样， 就可以通过调节每个分支上的电流比值来调节等离子体密度分布， 从而进一步控制等离子体的均匀性。
如图 9所示， 本发明提供的电感耦合等离子体装置的第一实施例中， 电感耦合线圈 4的多个独立分支之间相互并联连接， 之后通过匹配器 12与 RF (射频） 源 7连接。
如图 10所示， 本发明提供的电感耦合等离子体装置的第二实施例中， 电感耦合线圈 4 的多个独立分支之间相互并联连接， 并在输入端串联可变 电容 C1 , 之后通过匹配器 12与 RF (射频） 源 7连接。
如图 11所示， 本发明提供的电感耦合等离子体装置的第三实施例中， 电感耦合线圈 4 的每个独立分支在输入端串联可变电容 C1 后相互并联连 接， 之后通过匹配器 12与 RF (射频） 源 7连接。
通过上述描述可以看出， 由于本发明提供的电感耦合线圈的每个分支 都是平面部分和立体部分的结合， 并且立体部分位于中间， 因此， 这种结 构使得电感耦合线圈在反应腔室中间产生的电场小于该电感耦合线圈的平 面部分在腔室内相应位置处所产生的电场， 这样便解决了前述现有技术中 电感耦合线圈的缺陷， 从而使得等离子体在腔室中心和边缘的分布更加均 匀。
此外， 在本发明中通过使结构基本相同的独立分支对称并联连接， 减 小了电感耦合线圈的电感， 从而可以很容易地获得大面积的等离子体， 改 善大面积工艺中等离子体的均匀性。 同时， 这种电感耦合线圈结构使反应 腔体中的电磁场分布对称， 这也进一步使得等离子体的分布在中心和边缘 更加均匀。 而等离子体在反应腔室内均匀分布将使得被刻蚀物质表面发生 化学反应的速度差异较小， 并且刻蚀速率均匀， 从而提高了晶片的刻蚀质 量。
可以理解， 采用本发明提供的电感耦合线圈的等离子体装置同样具有在 反应腔室内等离子体分布均勾、 在被刻蚀物质表面发生化学反应的速度差 异小、 刻蚀速率均匀等特点， 因而， 采用这样的等离子体装置进行刻蚀等 加工工艺能够提高晶片的刻蚀质量。
需要指出的是， 本发明所采用的 RF (射频）源可以是一台也可以是多 台， 而且， 多个独立分支也可以分别单独通过匹配器 12与 RF (射频）源 7 连接。
进一步需要指出的是， 本发明提供的电感耦合线圈及采用该电感耦合 线圈的等离子体装置主要用于半导体晶片加工设备， 但并不局限于此， 其 也适用于其它的设备。
以上所述， 仅为本发明较佳的具体实施方式， 但本发明的保护范围并 不局限于此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易想到的变化或替换， 都应涵盖在本发明的保护范围之内。

Claims

权 利 要 求 书
1、 一种电感耦合线圏， 其特征在于， 由多个结构相同的独立分支嵌套 构成， 所述多个独立分支同轴线， 且相对于轴线对称布置。
2、 根据权利要求 1所述的电感耦合线圈， 其特征在于， 所述的每个独 立分支包括立体部分和平面部分， 所述立体部分沿轴线方向延伸； 所述平 面部分沿垂直于轴线的平面向四周延伸； 所述立体部分的底部端点与平面 部分的内部端点平滑连接。
3、 根据权利要求 2所述的电感耦合线圈， 其特征在于， 所述的每个独 立分支的平面部分以螺旋线的形式向四周延伸。
4、 根据权利要求 3所述的电感耦合线圈， 其特征在于， 所述的每个独 立分支的平面部分以阿基米德螺旋线或渐开线或涡状线的形式向四周延 伸。
5、 根据权利要求 2或 3所述的电感耦合线圈， 其特征在于， 所述的每 个独立分支的立体部分沿轴线螺旋上升。
6、 根据权利要求 5所述的电感耦合线圈， 其特征在于， 所述的每个独 立分支的立体部分沿上升方向其螺旋线的直径相同或者直径渐小或者直径 渐大。
7、 根据权利要求 1至 4、 6中任一项所述的电感耦合线圈， 其特征在 于， 所述的独立分支有 n ( n取大于等于 2的整数） 个。
8、 根据权利要求 5所述的电感耦合线圈， 其特征在于， 所述的独立分 支有 n ( n取大于等于 2的整数）个。
9、一种应用权利要求 1至 8中任意一项所述的电感耦合线圈的电感耦 合等离子体装置， 包括反应室， 反应室上部设有介电窗， 其特征在于， 所 述介电窗的上部设有电感耦合线圈， 所述电感耦合线圈通过射频匹配器与 射频电源连接。
10、 根据权利要求 9所述的电感耦合等离子体装置， 其特征在于， 所 述电感耦合线圈的多个独立分支相互并联连接后与所述射频匹配器连接。
11、 根据权利要求 9所述的电感耦合等离子体装置， 其特征在于， 所 述电感耦合线圈的每个独立分支分别与所述射频匹配器连接。
12、 根据权利要求 9至 11中任意一项所述的电感耦合等离子体装置， 其特征在于， 所述电感耦合线圈的每个独立分支并联连接， 并联后的输入 端串联可变电容， 输出端通过接地电容接地。
13、 根据权利要求 9至 11中任意一项所述的电感耦合等离子体装置， 其特征在于， 所述电感耦合线圈的每个独立分支的输入端分别串联可变电 容， 之后并联连接， 输出端通过接地电容接地。
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